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公开(公告)号:US20240363314A1
公开(公告)日:2024-10-31
申请号:US18647944
申请日:2024-04-26
申请人: SK enpulse Co., Ltd.
发明人: Jong Kyu LEE , Hyun Soo LEE , Il Gu YONG , Do Hyun CHOI , Ho Geun HAN
IPC分类号: H01J37/32
CPC分类号: H01J37/32541 , C23C16/45565
摘要: An embodiment of the present disclosure provides an upper electrode including a flat upper surface; a lower surface facing the upper surface; and a thickness from the upper surface to the lower surface, wherein the lower surface includes a first profile corresponding to the central area of the lower surface and having a first thickness change rate of −0.1 to 0; a third profile surrounding the first profile and having a third thickness change rate of −0.115 to −0.122; and a fifth profile surrounding the third profile and having a fifth thickness change rate of −0.003 to 0.003, wherein the first thickness change rate, the third thickness change rate, and the fifth thickness change rate are values obtained by dividing a change in thickness by a change in radius along a horizontal direction parallel to the upper surface from a center of the lower surface.
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公开(公告)号:US12122013B2
公开(公告)日:2024-10-22
申请号:US17077360
申请日:2020-10-22
申请人: SK enpulse Co., Ltd.
发明人: Jong Wook Yun , Jang Won Seo , Hyeyoung Heo , Eun Sun Joeng
CPC分类号: B24B37/24 , B24B37/22 , B24B37/26 , C08G18/10 , C08G18/72 , C08G18/3203 , C08K5/12 , C08K5/18
摘要: The composition according to an embodiment employs a mixture of curing agents, which comprises a first curing agent containing sulfur and a second curing agent containing an ester group, whereby it is possible to control the physical properties of the polishing pad as necessary.
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公开(公告)号:US20240140873A1
公开(公告)日:2024-05-02
申请号:US18468959
申请日:2023-09-18
申请人: SK enpulse Co., Ltd.
发明人: Kyung yeol MIN , Yongsoo CHOI , SungSic HWANG , Na Hyun NAM , Kyung In KIM , Jung Kun KANG , Woo Jin LEE
IPC分类号: C04B35/14 , C04B35/532 , C04B35/626
CPC分类号: C04B35/14 , C04B35/532 , C04B35/62655 , C04B2235/3418
摘要: The sintered body including silicon oxide and carbon, wherein the sintered body has a D band peak at a wave number of 1,311 cm−1 to 1,371 cm−1 and a G band peak at a wave number of 1,572 cm−1 to 1,632 cm−1 in a Raman spectrum, and wherein the D band peak or the G band peak have a higher intensity than a fifth peak present at a wave number of 1,027 cm−1 to 1,087 cm−1 in the Raman spectrum, is disclosed.
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公开(公告)号:US20230339072A1
公开(公告)日:2023-10-26
申请号:US18302786
申请日:2023-04-19
申请人: SK enpulse Co., Ltd.
发明人: Jong Wook YUN , Jang Won SEO , Su Young MOON , Kyung Hwan KIM , Tae Kyoung KWON
IPC分类号: B24B53/017
CPC分类号: B24B53/017
摘要: A conditioning device includes: an ejector for ejecting steam to a rotating polishing pad; and an ejector support supporting the ejector. The ejector includes a plurality of nozzles for ejecting the steam to the polishing pad and a nozzle heater for heating the plurality of nozzles. The nozzle heater is configured to heat nozzles disposed to correspond to a peripheral region of the polishing pad, among the plurality of nozzles, to a higher temperature than nozzles disposed to correspond to a central region of the polishing pad among the plurality of nozzles.
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公开(公告)号:US20230332016A1
公开(公告)日:2023-10-19
申请号:US18297152
申请日:2023-04-07
申请人: SK enpulse Co., Ltd.
发明人: Deok Su HAN , Seung Chul HONG , Han Teo PARK , Hwan Chul KIM , Hyeong Ju LEE
IPC分类号: C09G1/02 , C09K3/14 , H01L21/306
CPC分类号: C09G1/02 , C09K3/1436 , H01L21/30625
摘要: A composition for semiconductor processing, includes abrasive particles surface-modified with an amino silane-based compound; a copper erosion inhibitor, including an azole-based compound; a copper surface protectant, including a compound having a betaine group and a salicylic group or a derivative thereof; and a surfactant, including fluorine in a molecule thereof. A surface of the surface-modified abrasive particles comprises an amino silane group.
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公开(公告)号:US11724356B2
公开(公告)日:2023-08-15
申请号:US16108607
申请日:2018-08-22
申请人: SK enpulse Co., Ltd.
发明人: Jang Won Seo , Hyuk Hee Han , Hye Young Heo , Joonsung Ryou , Young Pil Kwon
IPC分类号: B24B37/24 , C08L75/04 , H01L21/67 , C08G18/76 , C08G18/18 , C08G18/62 , C08G18/20 , C08J9/12 , C08J9/00 , C08G18/75 , C08G18/48 , B24D11/04 , C08G18/24 , C08G18/42 , C08G18/73 , C08J9/32 , C08G18/44
CPC分类号: B24B37/24 , B24D11/04 , C08G18/1816 , C08G18/1825 , C08G18/1833 , C08G18/2018 , C08G18/2081 , C08G18/244 , C08G18/246 , C08G18/42 , C08G18/44 , C08G18/48 , C08G18/6216 , C08G18/73 , C08G18/755 , C08G18/757 , C08G18/7614 , C08G18/7621 , C08G18/7671 , C08G18/7678 , C08G18/7685 , C08J9/0028 , C08J9/0042 , C08J9/0052 , C08J9/122 , C08J9/32 , C08L75/04 , H01L21/67092 , C08G2110/005 , C08G2110/0025 , C08J2201/026 , C08J2203/06 , C08J2203/22 , C08J2205/044 , C08J2375/04 , C08G18/10 , C08G18/3814
摘要: Embodiments relate to a porous polyurethane polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors and a process for producing the same. In the porous polyurethane polishing pad, it is possible to control the size and distribution of pores, whereby the polishing performance (i.e., polishing rate) of the polishing pad can be adjusted, by way of employing thermally expanded microcapsules as a solid phase foaming agent and an inert gas as a gas phase foaming agent.
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公开(公告)号:US20240345467A1
公开(公告)日:2024-10-17
申请号:US18638000
申请日:2024-04-17
申请人: SK enpulse Co., Ltd.
发明人: Tae Wan KIM , Geon Gon LEE , Min Gyo JEONG , Hyung Joo LEE , Tae Young KIM
摘要: A method of fabricating a blank mask, the method including: forming a light-shielding film on a light-transmissive substrate; and cleaning the light-shielding film with a cleaning solution, wherein in the cleaning, the light-shielding film has a thickness change of less than 5 nm. The blank mask may include a light-transmissive substrate and a light-shielding film disposed on the light-transmissive substrate. Further, on an entire surface of the blank mask, a content of halogen ions is less than 0.05 ng/cm2, a content of nitrogen-based ions is less than 2 ng/cm2, and a content of sulfur-based ions is less than 0.1 ng/cm2. The blank mask may be a photomask.
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公开(公告)号:US20240061324A1
公开(公告)日:2024-02-22
申请号:US18451607
申请日:2023-08-17
申请人: SK enpulse Co., Ltd.
发明人: GeonGon LEE , Seong Yoon KIM , Min Gyo JEONG , Hyung Joo LEE , Sung Hoon SON , Tae Young KIM
摘要: A blank mask includes a light transmissive substrate and a multilayer comprising a light shielding layer and a phase shift layer disposed between the light transmissive substrate and the light shielding layer. The phase shift layer includes an upper surface facing the light shielding layer and a side surface connected to the upper surface, such that the light shielding layer is disposed on the upper surface and the side surface of the phase shift layer. When viewed from a top surface of the multilayer, the multilayer includes a central portion and an outer portion surrounding the central portion. The outer portion has a curved upper surface, which greatly suppresses damage to the phase shift layer by a cleaning solution and effectively reduces a frequency of particle generation at edges of the phase shift layer and the light shielding layer.
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公开(公告)号:US20240030041A1
公开(公告)日:2024-01-25
申请号:US18255783
申请日:2021-10-18
申请人: SK enpulse Co., Ltd.
发明人: Han Teo PARK , Deok Su HAN , Jang Kuk KWON , Seung Chul HONG
IPC分类号: H01L21/321 , C09G1/02 , H01L21/304 , H01L21/67
CPC分类号: H01L21/3212 , C09G1/02 , H01L21/304 , H01L21/67219
摘要: The present invention relates to a polishing composition for a semiconductor process, a method of preparing the polishing composition, and a method of fabricating a semiconductor device using the polishing composition. The polishing composition for a semiconductor process contains abrasive particles, an accelerator, and a stabilizer. The polishing composition has excellent long-term storage stability because the particles contained therein do not aggregate even after the polishing composition is stored at 60° C. or higher for a long time. In addition, the polishing composition may be applied to a process of polishing an amorphous carbon layer, may exhibit a high removal rate, prevent carbon residue generated during the polishing process from being adsorbed onto a semiconductor substrate, and prevent contamination of a polishing pad. The present invention may also provide a method of fabricating a semiconductor device using the polishing composition for a semiconductor process.
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公开(公告)号:US20230418150A1
公开(公告)日:2023-12-28
申请号:US18340334
申请日:2023-06-23
申请人: SK enpulse Co., Ltd.
发明人: GeonGon LEE , Hyung-joo LEE , Suhyeon KIM , Sung Hoon SON , Seong Yoon KIM , Min Gyo JEONG , Taewan KIM , Inkyun SHIN , Tae Young KIM
IPC分类号: G03F1/32
CPC分类号: G03F1/32
摘要: A blank mask includes a light transmissive substrate, and a light-blocking layer, disposed on the light transmissive substrate, comprising a transition metal and either one or both of oxygen and nitrogen. An average value of grain sizes of a surface of the light-blocking layer ranges from 14 nm to 24 nm.
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