公开(公告)号：US20170345738A1

公开(公告)日：2017-11-30

申请号：US15167640

申请日：2016-05-27

申请人： International Business Machines Corporation

发明人： Daniel C Edelstein ,  Chih-Chao Yang

IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L23/481 ,  H01L21/76856 ,  H01L21/76873 ,  H01L21/76898 ,  H01L21/8221 ,  H01L23/53238 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/92 ,  H01L24/94 ,  H01L25/065 ,  H01L27/0688 ,  H01L2224/04 ,  H01L2224/04026 ,  H01L2224/05009 ,  H01L2224/05576 ,  H01L2224/05647 ,  H01L2224/05687 ,  H01L2224/06102 ,  H01L2224/08146 ,  H01L2224/13009 ,  H01L2224/13147 ,  H01L2224/13565 ,  H01L2224/13583 ,  H01L2224/13657 ,  H01L2224/13666 ,  H01L2224/13673 ,  H01L2224/13676 ,  H01L2224/13681 ,  H01L2224/13684 ,  H01L2224/13687 ,  H01L2224/29006 ,  H01L2224/29187 ,  H01L2224/32146 ,  H01L2224/73204 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/05442 ,  H01L2224/83 ,  H01L2924/04953 ,  H01L2924/04941 ,  H01L2924/0496 ,  H01L2924/01074 ,  H01L2924/0499 ,  H01L2924/01027 ,  H01L2924/0498 ,  H01L2924/01044 ,  H01L2224/08 ,  H01L2224/80 ,  H01L2224/81

摘要： A method providing a high aspect ratio through substrate via in a substrate is described. The through substrate via has vertical sidewalls and a horizontal bottom. The substrate has a horizontal field area surrounding the through substrate via. A first metallic barrier layer is deposited on the sidewalls of the through substrate via. A nitridation process converts a surface portion of the metallic barrier layer to a nitride surface layer. The nitride surface layer enhances the nucleation of subsequent depositions. A first metal layer is deposited to fill the through substrate via. A selective etch creates a recess in the first metal layer in the through substrate via. A second barrier layer is deposited over the recess. A second metal layer is patterned over the second barrier layer filling the recess and creating a contact. Another aspect of the invention is a device produced by the method.

公开(公告)号：US08072067B2

公开(公告)日：2011-12-06

申请号：US12436266

申请日：2009-05-06

申请人： Ming-Chung Chian ,  Tsan-Yao Cheng ,  Li-Cheng Lin ,  Hong-Hsiang Tsai

发明人： Ming-Chung Chian ,  Tsan-Yao Cheng ,  Li-Cheng Lin ,  Hong-Hsiang Tsai

IPC分类号： H01L23/48

CPC分类号： H01L23/525 ,  H01L23/53223 ,  H01L24/02 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0231 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0401 ,  H01L2224/11462 ,  H01L2224/13024 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01044 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/15788 ,  H01L2924/3651 ,  H01L2924/01014 ,  H01L2924/04941 ,  H01L2924/01022 ,  H01L2924/00014 ,  H01L2924/0496 ,  H01L2924/0498 ,  H01L2924/0499 ,  H01L2924/0494 ,  H01L2924/04953 ,  H01L2924/00

摘要： A semiconductor structure including a substrate, an insulating layer, a composite pad structure, a passivation layer, and a bump is provided. A circuit structure is disposed on the substrate. The insulating layer covers the substrate and has a first opening exposing the circuit structure. The composite pad structure includes a first conductive layer, a barrier layer, and a second conductive layer which are sequentially disposed. The composite pad structure is disposed on the insulating layer and fills the first opening to electrically connect to the circuit structure. The passivation layer covers the composite pad structure and has a second opening exposing the composite pad structure. The bump fills the second opening and electrically connects to the composite pad structure.

摘要翻译： 提供了包括衬底，绝缘层，复合衬垫结构，钝化层和凸块的半导体结构。 电路结构设置在基板上。 绝缘层覆盖基板并且具有暴露电路结构的第一开口。 复合焊盘结构包括依次布置的第一导电层，阻挡层和第二导电层。 复合焊盘结构设置在绝缘层上并填充第一开口以电连接到电路结构。 钝化层覆盖复合焊盘结构，并具有露出复合焊盘结构的第二开口。 凸块填充第二开口并电连接到复合垫结构。

公开(公告)号：US20170345739A1

公开(公告)日：2017-11-30

申请号：US15289187

申请日：2016-10-09

申请人： International Business Machines Corporation

发明人： Daniel C. Edelstein ,  Chih-Chao Yang

IPC分类号： H01L23/48 ,  H01L21/822 ,  H01L21/768 ,  H01L27/06 ,  H01L23/532

CPC分类号： H01L23/481 ,  H01L21/76856 ,  H01L21/76873 ,  H01L21/76898 ,  H01L21/8221 ,  H01L23/53238 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/92 ,  H01L24/94 ,  H01L25/065 ,  H01L27/0688 ,  H01L2224/04 ,  H01L2224/04026 ,  H01L2224/05009 ,  H01L2224/05576 ,  H01L2224/05647 ,  H01L2224/05687 ,  H01L2224/06102 ,  H01L2224/08146 ,  H01L2224/13009 ,  H01L2224/13147 ,  H01L2224/13565 ,  H01L2224/13583 ,  H01L2224/13657 ,  H01L2224/13666 ,  H01L2224/13673 ,  H01L2224/13676 ,  H01L2224/13681 ,  H01L2224/13684 ,  H01L2224/13687 ,  H01L2224/29006 ,  H01L2224/29187 ,  H01L2224/32146 ,  H01L2224/73204 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/05442 ,  H01L2224/83 ,  H01L2924/04953 ,  H01L2924/04941 ,  H01L2924/0496 ,  H01L2924/01074 ,  H01L2924/0499 ,  H01L2924/01027 ,  H01L2924/0498 ,  H01L2924/01044 ,  H01L2224/08 ,  H01L2224/80 ,  H01L2224/81

摘要： An advanced through silicon via structure for is described. The device includes a substrate including integrated circuit devices. A high aspect ratio through substrate via is disposed in the substrate. The through substrate via has vertical sidewalls and a horizontal bottom. The substrate has a horizontal field area surrounding the through substrate via. A metallic barrier layer is disposed on the sidewalls of the through substrate via. A surface portion of the metallic barrier layer has been converted to a nitride surface layer by a nitridation process. The nitride surface layer enhances the nucleation of subsequent depositions. A first metal layer fills the through substrate via and has a recess in an upper portion. A second barrier layer is disposed over the recess. A second metal layer is disposed over the second barrier layer and creates a contact.

公开(公告)号：US20100283146A1

公开(公告)日：2010-11-11

申请号：US12436266

申请日：2009-05-06

申请人： Ming-Chung Chian ,  Tsan-Yao Cheng ,  Li-Cheng Lin ,  Hong-Hsiang Tsai

发明人： Ming-Chung Chian ,  Tsan-Yao Cheng ,  Li-Cheng Lin ,  Hong-Hsiang Tsai

IPC分类号： H01L23/498 ,  H01L21/768

CPC分类号： H01L23/525 ,  H01L23/53223 ,  H01L24/02 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0231 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0401 ,  H01L2224/11462 ,  H01L2224/13024 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01044 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/15788 ,  H01L2924/3651 ,  H01L2924/01014 ,  H01L2924/04941 ,  H01L2924/01022 ,  H01L2924/00014 ,  H01L2924/0496 ,  H01L2924/0498 ,  H01L2924/0499 ,  H01L2924/0494 ,  H01L2924/04953 ,  H01L2924/00

摘要： A semiconductor structure including a substrate, an insulating layer, a composite pad structure, a passivation layer, and a bump is provided. A circuit structure is disposed on the substrate. The insulating layer covers the substrate and has a first opening exposing the circuit structure. The composite pad structure includes a first conductive layer, a barrier layer, and a second conductive layer which are sequentially disposed. The composite pad structure is disposed on the insulating layer and fills the first opening to electrically connect to the circuit structure. The passivation layer covers the composite pad structure and has a second opening exposing the composite pad structure. The bump fills the second opening and electrically connects to the composite pad structure.

摘要翻译： 提供了包括衬底，绝缘层，复合衬垫结构，钝化层和凸块的半导体结构。 电路结构设置在基板上。 绝缘层覆盖基板并且具有暴露电路结构的第一开口。 复合焊盘结构包括依次布置的第一导电层，阻挡层和第二导电层。 复合焊盘结构设置在绝缘层上并填充第一开口以电连接到电路结构。 钝化层覆盖复合焊盘结构，并具有露出复合焊盘结构的第二开口。 凸块填充第二开口并电连接到复合垫结构。