公开(公告)号：US11591710B2

公开(公告)日：2023-02-28

申请号：US17060585

申请日：2020-10-01

申请人： Wisconsin Alumni Research Foundation

发明人： Paul Gregory Evans ,  Thomas Francis Kuech ,  Susan Elizabeth Babcock ,  Mohammed Humed Yusuf ,  Yajin Chen

IPC分类号： C30B1/02 ,  C30B29/22 ,  H01L21/02 ,  C30B29/32 ,  H01L29/66 ,  H01L21/28

摘要： A method for crystallizing an amorphous multicomponent ionic compound comprises applying an external stimulus to a layer of an amorphous multicomponent ionic compound, the layer in contact with an amorphous surface of a deposition substrate at a first interface and optionally, the layer in contact with a crystalline surface at a second interface, wherein the external stimulus induces an amorphous-to-crystalline phase transformation, thereby crystallizing the layer to provide a crystalline multicomponent ionic compound, wherein the external stimulus and the crystallization are carried out at a temperature below the melting temperature of the amorphous multicomponent ionic compound. If the layer is in contact with the crystalline surface at the second interface, the temperature is further selected to achieve crystallization from the crystalline surface via solid phase epitaxial (SPE) growth without nucleation.

公开(公告)号：US11408092B2

公开(公告)日：2022-08-09

申请号：US16962269

申请日：2018-12-25

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Wei Feng Qu ,  Ken Sunakawa ,  Tadashi Nakasugi

IPC分类号： C30B1/02 ,  C30B33/02 ,  C30B29/06

摘要： A method for heat-treating a silicon single crystal wafer to control a BMD density thereof to achieve a predetermined BMD density by performing an RTA heat treatment on a silicon single crystal wafer composed of an Nv region in a nitriding atmosphere, and then performing a second heat treatment, the method including: formulating a relational equation for a relation between BMD density and RTA temperature in advance; and determining an RTA temperature for achieving the predetermined BMD density according to the relational equation. Consequently, a method for heat-treating a silicon single crystal wafer for manufacturing an annealed wafer or an epitaxial wafer each having defect-free surface and a predetermined BMD density in a bulk portion thereof.

公开(公告)号：US20220136134A1

公开(公告)日：2022-05-05

申请号：US17433756

申请日：2019-06-04

申请人： PEKING UNIVERSITY

发明人： Kaihui Liu ,  Zhibin Zhang ,  Muhong Wu ,  Dapeng Yu ,  Enge Wang

IPC分类号： C30B29/02 ,  C30B29/64 ,  C30B1/02

摘要： A method for clonal-growth of a single-crystal metal, including: using copper as an example, placing an existing small-sized single-crystal copper foil with a plane of any index on a copper foil that needs to be single-crystallized, and performing annealing to obtain, by cloning, a large-area (in meters) single-crystal copper foil with the same surface index as that of the parent facet. The method solves the difficult problem of large-area single-crystal copper foil preparation. By performing annealing, a parent single-crystal copper foil with a very small size (˜0.25 cm2) can be cloned to produce a large-area (˜700 cm2) single-crystal copper foil, which is an increase in area of about 3000 times.

公开(公告)号：US11282978B2

公开(公告)日：2022-03-22

申请号：US16096992

申请日：2017-04-21

申请人： CENTRE NATIONAL de la RECHERCHE SCIENTIFIQUE ,  UNIVERSITÉ de STRASBOURG

发明人： Abdelilah Slaoui ,  Pierre Bellanger ,  Alexander Ulyashin ,  Freddy Syvertsen

IPC分类号： H01L31/18 ,  H01L31/0368 ,  H01L31/028 ,  H01L31/0392 ,  H01L31/0232 ,  H01L31/0288 ,  H01L31/0747 ,  H01L31/0224 ,  C30B29/06 ,  C30B1/02 ,  H01L21/02 ,  C23C16/24 ,  C23C16/56 ,  C23C16/50

摘要： The invention relates to a method for manufacturing a semiconductor component comprising a thin layer of crystalline silicon on a substrate, comprising the steps of: providing a silicon-rich aluminum substrate (S0), depositing a thin layer of amorphous silicon on the substrate (S1), and applying thermal annealing (S2) to the thin layer of amorphous silicon to obtain a thin layer of crystalline silicon on the substrate.

公开(公告)号：US11236440B2

公开(公告)日：2022-02-01

申请号：US16701231

申请日：2019-12-03

申请人： Xiamen University

发明人： Shuiyuan Yang ,  Jixun Zhang ,  Xinyu Qing ,  Lipeng Guo ,  Cuiping Wang ,  Xingjun Liu ,  Jinbin Zhang ,  Yixiong Huang

IPC分类号： C22C9/04 ,  C30B29/52 ,  C30B1/02

摘要： The present invention discloses a copper-zinc-aluminum-iron single crystal alloy material having an ultra-large grain structure of 5-50 cm grade, obtained by annealing an as-cast alloy having a polycrystalline structure through a single phase region of 800-960° C. for 2-105 h, where the as-cast alloy includes, by weight percentage, 62-82% of copper, 6-29% of zinc, 5-12% of aluminum, and 2-5% of iron. In the present invention, the alloy compositions have an essential difference and are a copper-zinc-aluminum-iron quaternary alloy, and the iron element is an indispensable alloying element. The preparation process of the present invention is extremely simple and very easy to implement and has a very good application prospect.

公开(公告)号：US20210198801A1

公开(公告)日：2021-07-01

申请号：US17126902

申请日：2020-12-18

申请人： Samsung Electronics Co., Ltd.

发明人： Hyungjun KIM ,  Chan KWAK ,  Takayoshi SASAKI ,  Yasuo EBINA ,  Changsoo LEE ,  Dohwon JUNG ,  Giyoung JO ,  Takaaki TANIGUCHI

IPC分类号： C30B1/02 ,  C03C17/23 ,  C03C17/00

摘要： Provided are a dielectric material, a device including the dielectric material, and a method of preparing the dielectric material, in which the dielectric material may include: a layered perovskite compound, wherein the layered perovskite compound may include at least one selected from a Dion-Jacobson phase, an Aurivillius phase, and a Ruddlesden-Popper phase, a temperature coefficient of capacitance (TCC) of a capacitance at 200° C. with respect to a capacitance at 40° C. may be in a range of about −15 percent (%) to about 15%, and a permittivity of the dielectric material may be 200 or greater in a range of about 1 kilohertz (kHz) to about 1 megahertz (MHz).

公开(公告)号：US20210189586A1

公开(公告)日：2021-06-24

申请号：US17127364

申请日：2020-12-18

申请人： Sefaattin Tongay ,  Dipesh Trivedi ,  Guven Turgut ,  Mohammed Sayyad ,  Ying Qin

发明人： Sefaattin Tongay ,  Dipesh Trivedi ,  Guven Turgut ,  Mohammed Sayyad ,  Ying Qin

IPC分类号： C30B1/02 ,  C01B19/04 ,  C03C17/23 ,  C04B35/468

摘要： Forming a two-dimensional Janus layer includes forming a layer of MX2, where M is a transition metal and X is a first chalcogen, plasma etching the layer of MX2 to remove X from the top layer, thereby yielding an etched layer, and contacting the etched layer with a second chalcogen Y. The second chalcogen is different than the first chalcogen, resulting in a two-dimensional Janus layer including MXY.

公开(公告)号：US20210013036A1

公开(公告)日：2021-01-14

申请号：US16620503

申请日：2019-05-14

申请人： WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.

发明人： Yuanming MENG ,  Yu YAN

IPC分类号： H01L21/02 ,  H01L21/306 ,  C23C16/48 ,  C30B1/02

摘要： The present disclosure provides a method and system for fabricating a semiconductor device. The method and system of the present disclosure, after obtaining the polysilicon layer, first form the protective oxide layer on the surface of the polysilicon layer, and then etch the protective oxide layer and the protrusions on the surface of the polysilicon layer with the buffered oxide etchant based on controllability of the buffered oxide etchant, thereby reducing the protrusions on the surface of the polysilicon layer, while well protecting the surface of the polysilicon layer. Therefore, the technical problem of surface roughness in the existing polysilicon layers is solved.

公开(公告)号：US10683586B2

公开(公告)日：2020-06-16

申请号：US15116364

申请日：2015-02-04

申请人： National University of Singapore

发明人： Barbaros Ozyilmaz ,  Andreas Volker Stier ,  Chee Tat Toh ,  Antonio Helio Castro Neto

IPC分类号： H01L29/16 ,  C30B25/10 ,  C01B32/188 ,  C01B32/186 ,  C23C16/48 ,  C30B1/02 ,  C30B25/18 ,  C30B29/02 ,  B82Y40/00

摘要： A method of making graphene includes providing a seed gas in the presence of a metallic substrate, providing a pulsed, ultraviolet laser beam, and moving the substrate or the laser beam relative to the other, thereby advancing a graphene crystallization front and forming an ordered graphene structure. In some instances, the substrate can have a surface with two-fold atomic symmetry. A method of recrystallizing graphene includes providing a pulsed, ultraviolet laser beam to a polycrystalline graphene sheet.

公开(公告)号：US10566193B2

公开(公告)日：2020-02-18

申请号：US15230870

申请日：2016-08-08

申请人： NORTH CAROLINA STATE UNIVERSITY

发明人： Jagdish Narayan

IPC分类号： C01B32/25 ,  H01L21/02 ,  C01B21/064 ,  C30B29/04 ,  C23C14/06 ,  G01R33/12 ,  H03B15/00 ,  G01R33/032 ,  C01B32/05 ,  C01B32/188 ,  C30B1/02 ,  C30B23/02 ,  C30B23/06 ,  C30B29/40 ,  C30B19/08 ,  C30B29/62 ,  C30B31/06 ,  C30B31/22 ,  H01L21/268 ,  H01F1/42 ,  C23C14/28 ,  C30B13/10 ,  C30B13/24 ,  H01L43/10

摘要： Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.