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    PHOTODETECTOR THIN FILM WITH PBSE NANOSTRUCTURES
    1.
    发明申请
    PHOTODETECTOR THIN FILM WITH PBSE NANOSTRUCTURES 有权

    公开(公告)号：US20250063847A1

    公开(公告)日：2025-02-20

    申请号：US18777666

    申请日：2024-07-19

    Applicant: Illinois Tool Works Inc.

    Inventor： Richard S. Kim ,  Jeung Hun Park

    IPC: H01L31/032 ,  H01L31/0368 ,  H01L31/0392

    Abstract: Methods and systems are provided for a photoconductive thin film of a plurality of Lead Selenide (PbSe) nanostructures arranged on quartz substrates. The photoconductive thin film is synthesized, for example, using a chemical bath deposition, and can include a tunable iodine doping process to select the size and/or shape of the nanostructures. An oxygenation sensitization process at a sufficiently high temperature can increase carrier mobility of the thin film.

    Imaging in curved arrays: methods to produce free-formed curved detectors
    3.
    发明授权
    Imaging in curved arrays: methods to produce free-formed curved detectors 有权

    公开(公告)号：US12087803B2

    公开(公告)日：2024-09-10

    申请号：US17955679

    申请日：2022-09-29

    Applicant: California Institute of Technology

    Inventor： Todd J. Jones ,  Shouleh Nikzad

    IPC: H01L27/146 ,  H01L27/148 ,  H01L31/0392

    CPC classification number: H01L27/14875 ,  H01L27/14683 ,  H01L31/03926

    Abstract: A detector including a detector membrane comprising a semiconductor sensor and a readout circuit, the detector membrane having a thickness of 100 micrometers or less and a curved surface conformed to a curved focal plane of an optical system imaging electromagnetic radiation onto the curved surface; and a mount attached to a backside of the detector membrane. A maximum of the strain experienced by the detector membrane is reduced by distribution of the strain induced by formation of the curved surface across all of the curved surface of the detector membrane, thereby allowing an increased radius of curvature of the curved surface as compared to without the distribution.

    Dielectric coating
    4.
    发明授权
    Dielectric coating 有权

    公开(公告)号：US12000050B2

    公开(公告)日：2024-06-04

    申请号：US17910867

    申请日：2021-03-16

    Applicant: ArcelorMittal

    Inventor： Sébastien Le Craz

    IPC: C23C18/12 ,  H01L31/0224 ,  H01L31/0392

    CPC classification number: C23C18/122 ,  C23C18/1241 ,  C23C18/1254 ,  C23C18/127 ,  H01L31/022425 ,  H01L31/0392

    Abstract: A sol composition for producing dielectric layers on a metallic substrate including 10 to 30%, by weight of the sol composition, of a precursor including a trialkoxysilane, 10 to 40%, by weight of the sol composition, of titanium dioxide particles whose median size is below 500 nm, 4.5 to 36%, by weight of the sol composition, of silica particles whose particle size distribution D90 is below 100 nm, 5 to 15%, by weight of the sol composition, of a solvent capable of making the precursor miscible in water, 0.1 to 2%, by weight of the sol composition, of an acidic catalyst, the remainder being water.

    Electrical device with stress buffer layer and stress compensation layer
    7.
    发明授权
    Electrical device with stress buffer layer and stress compensation layer 有权

    公开(公告)号：US11894477B2

    公开(公告)日：2024-02-06

    申请号：US17322073

    申请日：2021-05-17

    Applicant: Raytheon Company

    Inventor： Andrew Clarke ,  Emily Thomson ,  Michael Rondon

    IPC: H01L27/146 ,  H01L31/0392 ,  H01L31/0296 ,  H01L31/103 ,  H01L31/18

    CPC classification number: H01L31/03925 ,  H01L27/1465 ,  H01L27/1469 ,  H01L31/02966 ,  H01L31/1032 ,  H01L31/1832

    Abstract: An electrical device includes a substrate with a compressive layer, a neutral stress buffer layer and a tensile stress compensation layer. The stress buffer layer and the stress compensation layer may each be formed with aluminum nitride using different processing parameters to provide a different intrinsic stress value for each layer. The aluminum nitride tensile layer is configured to counteract stresses from the compressive layer in the device to thereby control an amount of substrate bow in the device. This is useful for protecting fragile materials in the device, such as mercury cadmium telluride. The aluminum nitride stress compensation layer also can compensate for forces, such as due to CTE mismatches, to protect the fragile layer. The device may include temperature-sensitive materials, and the aluminum nitride stress compensation layer or stress buffer layer may be formed at a temperature below the thermal degradation temperature of the temperature-sensitive material.

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