公开(公告)号：US20240016067A1

公开(公告)日：2024-01-11

申请号：US17885521

申请日：2022-08-10

Applicant: United Microelectronics Corp.

Inventor： Chih-Wei Kuo ,  Chung Yi Chiu ,  Yi-Wei Tseng ,  Hsuan-Hsu Chen ,  Chun-Lung Chen

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01L43/14

CPC classification number: H01L43/04 ,  H01L27/222 ,  H01L43/06 ,  H01L43/14

Abstract: A magnetic memory including a substrate, a spin-orbit torque (SOT) layer, a magnetic tunnel junction (MTJ) stack, a first protection layer, and a second protection layer is provided. The SOT layer is located over the substrate. The MTJ stack is located on the SOT layer. The first protection layer and the second protection layer are located on the sidewall of the MTJ stack. The first protection layer is located between the second protection layer and the MTJ stack. There is a notch between the second protection layer and the SOT layer.

公开(公告)号：US20240005973A1

公开(公告)日：2024-01-04

申请号：US17854785

申请日：2022-06-30

Applicant: Western Digital Technologies, Inc.

Inventor： Quang LE ,  Brian R. YORK ,  Cherngye HWANG ,  Xiaoyong LIU ,  Michael A. GRIBELYUK ,  Xiaoyu XU ,  Susumu OKAMURA ,  Kuok San HO ,  Hisashi TAKANO ,  Randy G. SIMMONS

IPC: G11C11/16 ,  H01L43/10 ,  G11B5/39 ,  H01L43/08 ,  H01L43/04 ,  H01L43/06 ,  H01L27/22

CPC classification number: G11C11/161 ,  H01L43/10 ,  G11B5/3906 ,  H01L43/08 ,  H01L43/04 ,  H01L43/06 ,  H01L27/222

Abstract: The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprise one or more GexNiFe layers, where at least one GexNiFe layer is disposed in contact with the BiSb layer. The GexNiFe layer has a thickness less than or equal to about 15 Å when used as an interlayer on top of the BiSb layer or less than or equal to 40 Å when used as a buffer layer underneath the BiSb. When the BiSb layer is doped with a dopant comprising a gas, a metal, a non-metal, or a ceramic material, the GexNiFe layer promotes the BiSb layer to have a (012) orientation. When the BiSb layer is undoped, the GexNiFe layer promotes the BiSb layer to have a (001) orientation. Utilizing the GexNiFe layer allows the crystal orientation of the BiSb layer to be selected.

公开(公告)号：US20230354719A1

公开(公告)日：2023-11-02

申请号：US17732548

申请日：2022-04-29

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Shy-Jay Lin ,  Nuo Xu ,  Yen-Lin Huang

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06

CPC classification number: H01L43/04 ,  H01L27/222 ,  H01L43/06

Abstract: A memory device including a pair of magnetic conductive posts, a Spin-Hall-Effect-assisted (SHE-assisted) layer, and a magnetic tunneling junction (MTJ) structure. The Spin-Hall-Effect-assisted (SHE-assisted) layer is disposed over and electrically connected to the pair of magnetic conductive posts. The magnetic tunneling junction (MTJ) structure has in-plane magnetic anisotropy, wherein the MTJ structure is disposed on the SHE-assisted layer, and the pair of magnetic conductive posts provide an in-plane magnetic field during a write operation of the MTJ structure.

公开(公告)号：US20230320232A1

公开(公告)日：2023-10-05

申请号：US17723495

申请日：2022-04-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hung-Chan Lin

IPC: H01L43/14 ,  H01L27/22 ,  H01L43/06 ,  H01L43/04

CPC classification number: H01L43/14 ,  H01L27/222 ,  H01L43/04 ,  H01L43/06

Abstract: A method for fabricating semiconductor device includes the steps of forming a first inter-metal dielectric (IMD) layer, forming two via holes and a trench in the first IMD layer, forming a metal layer in the two via holes and the trench for forming a metal interconnection and a spin orbit torque (SOT) layer, forming a magnetic tunneling junction (MTJ) on the SOT layer, forming a first hard mask on the MTJ, forming a second hard mask on the first hard mask, forming a cap layer adjacent to the MTJ, and forming a second IMD layer around the cap layer.

公开(公告)号：US20230292630A1

公开(公告)日：2023-09-14

申请号：US17966183

申请日：2022-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Siyeon CHO ,  Taeyoung KIM ,  Hyunmog PARK ,  Bongyong LEE ,  Yukio HAYAKAWA

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01L43/10 ,  G11C11/16 ,  G11C11/18

CPC classification number: H01L43/04 ,  G11C11/161 ,  G11C11/18 ,  H01L27/222 ,  H01L43/06 ,  H01L43/10

Abstract: A magnetic memory device includes a loop-type magnetic track having a first part and a second part that are arranged in a counterclockwise direction, a first conductive line on a top surface of the first part, and a second conductive line on a bottom surface of the second part. The magnetic track includes a lower magnetic layer, a spacer layer, and an upper magnetic layer that are sequentially stacked. Each of the first and second conductive lines includes heavy metal. Each of the first and second conductive lines is configured to generate spin-orbit torque caused by current that flows therein. The spin-orbit torque causes magnetic domains in the magnetic track to move in a clockwise direction or in the counterclockwise direction.

公开(公告)号：US11668766B2

公开(公告)日：2023-06-06

申请号：US16878967

申请日：2020-05-20

Applicant: Melexis Technologies SA

Inventor： Appolonius Jacobus Van Der Wiel

IPC: G01R33/00 ,  G01R33/02 ,  H01L23/528 ,  H01L23/58 ,  H01L23/522 ,  H01L43/04 ,  H01L43/06 ,  H01L43/14

CPC classification number: G01R33/0011 ,  G01R33/02 ,  H01L23/528 ,  H01L23/5226 ,  H01L23/58 ,  H01L43/04 ,  H01L43/065 ,  H01L43/14

Abstract: A magnetic flux concentrator (MFC) structure comprises a substrate, a first metal layer disposed on or over the substrate, and a second metal layer disposed on or over the first metal layer. Each metal layer comprises (i) a first wire layer comprising first wires conducting electrical signals, and (ii) a first dielectric layer disposed on the first wire layer. A magnetic flux concentrator is disposed at least partially in the first metal layer, in the second metal layer, or in both the first and the second metal layers. The structure can comprise an electronic circuit or a magnetic sensor with sensing plates. The structure can comprise a transformer or an electromagnet with suitable control circuits. The magnetic flux concentrator can comprise a metal stress-reduction layer in the first or second wire layers and a core formed by electroplating the stress-reduction layer.

公开(公告)号：US11641782B2

公开(公告)日：2023-05-02

申请号：US17065946

申请日：2020-10-08

Applicant: Korea University Research and Business Foundation

Inventor： Young Keun Kim ,  Gyu Won Kim

IPC: H01L43/10 ,  C22C27/02 ,  C22C27/04 ,  C23C14/14 ,  C23C14/35 ,  C23C14/58 ,  H01F10/32 ,  H01F41/30 ,  H01L43/04 ,  H01L43/06 ,  H01L43/14

Abstract: The present disclosure relates to a spin-orbit torque-based switching device and a method of fabricating the same. The spin-orbit torque-based switching device of the present disclosure includes a spin torque generating layer provided with a tungsten-vanadium alloy thin film exhibiting perpendicular magnetic anisotropy (PMA) characteristics and a magnetization free layer formed on the spin torque generating layer.

公开(公告)号：US20230129179A1

公开(公告)日：2023-04-27

申请号：US17508706

申请日：2021-10-22

Applicant: Texas Instruments Incorporated

Inventor： Keith Ryan Green ,  Erika Lynn Mazotti ,  William David French ,  Ricky Alan Jackson

IPC: G01R33/07 ,  H01L43/14 ,  H01L43/06 ,  H01L43/04 ,  G01R33/00

Abstract: A microelectronic device has a Hall sensor that includes a Hall plate in a semiconductor material. The Hall sensor includes contact regions in the semiconductor material, contacting the Hall plate. The Hall sensor includes an isolation structure with a dielectric material contacting the semiconductor material, on at least two opposite sides of each of the contact regions. The isolation structure is laterally separated from the contact regions by gaps. The Hall sensor further includes a conductive spacer over the gaps, the conductive spacer being separated from the semiconductor material by an insulating layer.

公开(公告)号：US11637235B2

公开(公告)日：2023-04-25

申请号：US16744963

申请日：2020-01-16

Applicant: Everspin Technologies, Inc.

Inventor： Sumio Ikegawa ,  Han Kyu Lee ,  Sanjeev Aggarwal ,  Jijun Sun ,  Syed M. Alam ,  Thomas Andre

IPC: H01L43/04 ,  H01L43/06 ,  H01L43/10 ,  H01L43/14 ,  H01L27/22

Abstract: The present disclosure is drawn to, among other things, a magnetoresistive device and a magnetoresistive memory comprising a plurality of such magnetoresistive devices. In some aspects, a magnetoresistive device may include a magnetically fixed region, a magnetically free region above or below the magnetically fixed region, and an intermediate region positioned between the magnetically fixed region and the magnetically free region, wherein the intermediate region includes a first dielectric material. The magnetoresistive device may also include encapsulation layers formed on opposing side walls of the magnetically free region, wherein the encapsulation layers include the first dielectric material.

公开(公告)号：US11626229B2

公开(公告)日：2023-04-11

申请号：US17231277

申请日：2021-04-15

Applicant: University of Rochester

Inventor： Mohammad Kazemi ,  Eby G. Friedman ,  Engin Ipek

IPC: H01F10/32 ,  G11C11/16 ,  H03K19/18 ,  H01L43/00 ,  H01L43/04 ,  H01L43/06 ,  G11C11/18 ,  H01L43/10

Abstract: A method of controlling a trajectory of a perpendicular magnetization switching of a ferromagnetic layer using spin-orbit torques in the absence of any external magnetic field includes: injecting a charge current Je through a heavy-metal thin film disposed adjacent to a ferromagnetic layer to produce spin torques which drive a magnetization M out of an equilibrium state towards an in-plane of a nanomagnet; turning the charge current Je off after te seconds, where an effective field experienced by the magnetization of the ferromagnetic layer Heff is significantly dominated by and in-plane anisotropy Hkx, and where M passes a hard axis by precessing around the Heff; and passing the hard axis, where Heff is dominated by a perpendicular-to-the-plane anisotropy Hkz, and where M is pulled towards the new equilibrium state by precessing and damping around Heff, completing a magnetization switching.