公开(公告)号：US11641782B2

公开(公告)日：2023-05-02

申请号：US17065946

申请日：2020-10-08

申请人： Korea University Research and Business Foundation

发明人： Young Keun Kim ,  Gyu Won Kim

IPC分类号： H01L43/10 ,  C22C27/02 ,  C22C27/04 ,  C23C14/14 ,  C23C14/35 ,  C23C14/58 ,  H01F10/32 ,  H01F41/30 ,  H01L43/04 ,  H01L43/06 ,  H01L43/14

摘要： The present disclosure relates to a spin-orbit torque-based switching device and a method of fabricating the same. The spin-orbit torque-based switching device of the present disclosure includes a spin torque generating layer provided with a tungsten-vanadium alloy thin film exhibiting perpendicular magnetic anisotropy (PMA) characteristics and a magnetization free layer formed on the spin torque generating layer.

公开(公告)号：US20230129179A1

公开(公告)日：2023-04-27

申请号：US17508706

申请日：2021-10-22

申请人： Texas Instruments Incorporated

发明人： Keith Ryan Green ,  Erika Lynn Mazotti ,  William David French ,  Ricky Alan Jackson

IPC分类号： G01R33/07 ,  H01L43/14 ,  H01L43/06 ,  H01L43/04 ,  G01R33/00

摘要： A microelectronic device has a Hall sensor that includes a Hall plate in a semiconductor material. The Hall sensor includes contact regions in the semiconductor material, contacting the Hall plate. The Hall sensor includes an isolation structure with a dielectric material contacting the semiconductor material, on at least two opposite sides of each of the contact regions. The isolation structure is laterally separated from the contact regions by gaps. The Hall sensor further includes a conductive spacer over the gaps, the conductive spacer being separated from the semiconductor material by an insulating layer.

公开(公告)号：US11637235B2

公开(公告)日：2023-04-25

申请号：US16744963

申请日：2020-01-16

申请人： Everspin Technologies, Inc.

发明人： Sumio Ikegawa ,  Han Kyu Lee ,  Sanjeev Aggarwal ,  Jijun Sun ,  Syed M. Alam ,  Thomas Andre

IPC分类号： H01L43/04 ,  H01L43/06 ,  H01L43/10 ,  H01L43/14 ,  H01L27/22

摘要： The present disclosure is drawn to, among other things, a magnetoresistive device and a magnetoresistive memory comprising a plurality of such magnetoresistive devices. In some aspects, a magnetoresistive device may include a magnetically fixed region, a magnetically free region above or below the magnetically fixed region, and an intermediate region positioned between the magnetically fixed region and the magnetically free region, wherein the intermediate region includes a first dielectric material. The magnetoresistive device may also include encapsulation layers formed on opposing side walls of the magnetically free region, wherein the encapsulation layers include the first dielectric material.

公开(公告)号：US11626229B2

公开(公告)日：2023-04-11

申请号：US17231277

申请日：2021-04-15

申请人： University of Rochester

发明人： Mohammad Kazemi ,  Eby G. Friedman ,  Engin Ipek

IPC分类号： H01F10/32 ,  G11C11/16 ,  H03K19/18 ,  H01L43/00 ,  H01L43/04 ,  H01L43/06 ,  G11C11/18 ,  H01L43/10

摘要： A method of controlling a trajectory of a perpendicular magnetization switching of a ferromagnetic layer using spin-orbit torques in the absence of any external magnetic field includes: injecting a charge current Je through a heavy-metal thin film disposed adjacent to a ferromagnetic layer to produce spin torques which drive a magnetization M out of an equilibrium state towards an in-plane of a nanomagnet; turning the charge current Je off after te seconds, where an effective field experienced by the magnetization of the ferromagnetic layer Heff is significantly dominated by and in-plane anisotropy Hkx, and where M passes a hard axis by precessing around the Heff; and passing the hard axis, where Heff is dominated by a perpendicular-to-the-plane anisotropy Hkz, and where M is pulled towards the new equilibrium state by precessing and damping around Heff, completing a magnetization switching.

公开(公告)号：US11621215B1

公开(公告)日：2023-04-04

申请号：US17538841

申请日：2021-11-30

申请人： Texas Instruments Incorporated

发明人： Enis Tuncer

IPC分类号： G01R15/20 ,  H01L23/495 ,  H01L23/31 ,  H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  G01R19/00 ,  H01L43/06

摘要： In a described example, an apparatus includes: a lead frame having a first portion and having a second portion electrically isolated from the first portion, the first portion having a side surface normal to a planar opposite surface, and having a recessed edge that is notched or chamfered and extending between the side surface and a planar device side surface; a spacer dielectric mounted to the planar device side surface and partially covered by the first portion, and extending beyond the first portion; a semiconductor die mounted to the spacer dielectric, the semiconductor die partially covered by the spacer dielectric and extending beyond the spacer dielectric; the second portion of the lead frame comprising leads coupled to the semiconductor die by electrical connections; and mold compound covering the semiconductor die, the electrical connections, the spacer dielectric, and partially covering the first portion and the second portion.

公开(公告)号：US20230094395A1

公开(公告)日：2023-03-30

申请号：US17952362

申请日：2022-09-26

申请人： Asahi Kasei Microdevices Corporation

发明人： Ken TANAKA ,  Kenji KAI ,  Takuya ISHIDA

IPC分类号： G01R33/07 ,  H01L43/04 ,  H01L43/06

摘要： A die pad, a signal processing IC, an adhesive layer, and at least one magnetoelectric conversion element included in a magnetic sensor are encapsulated by a molding resin. At least a part of the first end surface of the signal processing IC is positioned on a side closer to the at least one magnetoelectric conversion element than a first end surface of the die pad on a side of the at least one magnetoelectric conversion element in a plan view. An isolation portion into which the molding resin enters is provided between the first surface of the die pad on a side of the first end surface, and the first surface of the signal processing IC on a side of the first end surface, and a thickness of the isolation portion is smaller than a thickness of the die pad.

公开(公告)号：US11605778B2

公开(公告)日：2023-03-14

申请号：US16784950

申请日：2020-02-07

申请人： Lake Shore Cryotronics, Inc.

发明人： David Daughton ,  Patrick Gleeson ,  Bo-Kuai Lai ,  Daniel Hoy

IPC分类号： H01L43/06 ,  H01L43/10 ,  H01L43/14 ,  H01L43/04

摘要： A magnetic field magnetic field sensor and method of making the sensor. The sensor and method of making the sensor may comprise a material or structure that prevents the admission of light in certain wavelengths to enhance the stability of the magnetic field sensor over a period of time. The sensor and method of making the sensor may comprise an adsorption prevention layer which protects the semiconductor portion of the magnetic. The sensor may also comprise an insulating layer formed between semiconductor layers and a substrate layer.

公开(公告)号：US20230064289A1

公开(公告)日：2023-03-02

申请号：US17445831

申请日：2021-08-25

申请人： International Business Machines Corporation

发明人： Heng Wu ,  Alexander Reznicek ,  Bahman Hekmatshoartabari ,  Ruilong Xie

IPC分类号： H01L43/04 ,  H01L43/06 ,  H01L43/14 ,  H01L27/22 ,  H01F10/32 ,  G11C11/16

摘要： Embodiments disclosed herein include a semiconductor structure. The semiconductor structure may include a spin transfer torque (STT) magnetoresistive random access memory (MRAM) stack. The semiconductor structure may also include a spin orbit torque (SOT) MRAM stack vertically in series with the STT-MRAM. The SOT-MRAM stack may include a heavy metal spin hall effect rail configured to flip an SOT free-layer magnetic orientation in response to a horizontal signal through the heavy metal rail.

公开(公告)号：US20230063084A1

公开(公告)日：2023-03-02

申请号：US17894167

申请日：2022-08-24

申请人： TOKYO INSTITUTE OF TECHNOLOGY

发明人： Nam Hai PHAM ,  Takanori SHIRAKURA ,  Tsuyoshi KONDO

IPC分类号： H01L43/08 ,  G11C11/16 ,  H01L43/10 ,  H01L27/22 ,  H01L43/04 ,  H01L43/06

摘要： According to one embodiment, a spin injection source comprising a half Heusler alloy-topological semi-metal that has a surface state of Dirac type and that is in contact with a ferromagnet. The half Heusler alloy-topological semi-metal supplies a spin current to the ferromagnet based on a current flowing in a direction parallel to a first surface that is in contact with the ferromagnet.

公开(公告)号：US20230010525A1

公开(公告)日：2023-01-12

申请号：US17488664

申请日：2021-09-29

申请人： SHANDONG UNIVERSITY

发明人： Shishen YAN ,  Yufeng TIAN ,  Yanxue CHEN ,  Lihui BAI ,  Tie ZHOU ,  Xuejie XIE

IPC分类号： H01L43/04 ,  H01L27/22 ,  H01L43/06

摘要： Disclosed are an artificial antiferromagnetic structure and a storage element. The artificial antiferromagnetic structure includes a first metal layer, an artificially synthesized antiferromagnetic layer and a second metal layer that are stacked in sequence, wherein there is an interfacial DM (Dzyaloshinskii-Moriya) interaction at an interface between the metal layer and the artificially synthesized antiferromagnetic layer, such that there is a first interfacial DM interaction between the first metal layer and the artificially synthesized antiferromagnetic layer, there is a second interfacial DM interaction between the second metal layer and the artificially synthesized antiferromagnetic layer, and the first interfacial DM interaction is different from the second interfacial DM interaction. The artificially synthesized antiferromagnetic layer forms a stable chiral Néel magnetic domain wall due to a strong interfacial DM interaction.