公开(公告)号：WO2004077546A3

公开(公告)日：2005-05-19

申请号：PCT/EP2004000263

申请日：2004-01-15

Applicant: SIEMENS AG ,  WEIDNER KARL ,  WOLFGANG ECKHARD ,  ZAPF JOERG

Inventor： WEIDNER KARL ,  WOLFGANG ECKHARD ,  ZAPF JOERG

IPC: H01L21/60 ,  H01L21/68 ,  H01L23/482

CPC classification number: H01L23/4822 ,  H01L21/568 ,  H01L21/6835 ,  H01L24/19 ,  H01L24/24 ,  H01L24/82 ,  H01L2224/2402 ,  H01L2224/24051 ,  H01L2224/24226 ,  H01L2224/24227 ,  H01L2224/82001 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/3025 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/49149

Abstract: A self-supporting contacting structure is directly produced on a component that does not have a housing by applying a layer made of nonconducting material and a layer made of an electrically conductive material to the component and to a support and by subsequently removing these layers from said support.

Abstract translation: 制造（2）具有Kontaktierstruktur，一个装置的方法，其中所述组分（2）具有电接触表面（210），其特征在于， - 层（3）的组件上的电绝缘材料（2）和一个在和/ 布置或分量载波（1）被施加， - 电接触表面（210）的组件的层的应用过程中至少部分地保持无（3）电绝缘材料和/或所述层（3）的施加之后的电绝缘 材料暴露， - 导电材料的层（4）的层上的电绝缘材料和所述部件的电接触表面（210）的（3）被施加， - 其中，所述层（3）的从载体电绝缘材料 （1）被分离。

公开(公告)号：WO03030247A3

公开(公告)日：2003-10-09

申请号：PCT/DE0203615

申请日：2002-09-25

Applicant: SIEMENS AG ,  HAESE KERSTIN ,  AMIGUES LAURENCE ,  SCHWARZBAUER HERBERT ,  SELIGER NORBERT ,  WEIDNER KARL ,  ZAPF JOERG ,  REBHAN MATTHIAS

Inventor： HAESE KERSTIN ,  AMIGUES LAURENCE ,  SCHWARZBAUER HERBERT ,  SELIGER NORBERT ,  WEIDNER KARL ,  ZAPF JOERG ,  REBHAN MATTHIAS

IPC: H01L23/051 ,  H01L23/373 ,  H01L23/482 ,  H01L25/07 ,  H01L25/18 ,  H05K1/03 ,  H05K3/10 ,  H05K3/32 ,  H05K3/46 ,  H01L21/60 ,  H01L23/538

CPC classification number: H05K3/4605 ,  H01L23/051 ,  H01L23/3735 ,  H01L23/482 ,  H01L24/24 ,  H01L24/82 ,  H01L25/072 ,  H01L2224/2402 ,  H01L2224/24051 ,  H01L2224/24225 ,  H01L2224/24226 ,  H01L2224/45124 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01058 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/3025 ,  H05K1/0306 ,  H05K3/108 ,  H05K3/32 ,  H05K3/4632 ,  H05K2201/0129 ,  H05K2201/0154 ,  H05K2203/068 ,  H05K2203/085 ,  H05K2203/1469 ,  H01L2924/00 ,  H01L2224/48

Abstract: The invention relates to a method for contacting electrical contact surfaces (21, 112) on a surface (20) of a substrate (1). According to said method, a film (3) based on polyimide or epoxy is laminated onto the surface, under a vacuum, in such a way that the film closely covers the surface comprising the contact surfaces and adheres to the same. Each contact surface to be contacted on the surface is uncovered by opening respective windows (31) in the film, and a contact is established in a plane manner between each uncovered contact surface and a layer (4) of metal. The inventive method is used to establish a large-surface contact for power semiconductor chips, enabling a high current density.

Abstract translation: 在用于在基板的一个表面（20）上接触的电接触表面（21，112）的方法（1）在真空下在聚酰亚胺或环氧树脂层压的薄膜（3）的表面上，使得与接触表面的薄膜表面 紧紧覆盖并粘附到该表面上，各接触面以在表面上通过在露出的箔打开相应窗口（31）相接触，并且每个暴露的接触表面用由金属制成的表面层（4）接触。 应用：功率半导体芯片的大面积接触，这允许高电流密度。

公开(公告)号：WO2005050746A3

公开(公告)日：2005-07-28

申请号：PCT/EP2004052676

申请日：2004-10-27

Applicant: SIEMENS AG ,  OSRAM OPTO SEMICONDUCTORS GMBH ,  GUENTHER EWALD ,  SORG JOERG-ERICH ,  WEIDNER KARL ,  ZAPF JOERG

Inventor： GUENTHER EWALD ,  SORG JOERG-ERICH ,  WEIDNER KARL ,  ZAPF JOERG

IPC: H01L33/44 ,  H01L33/46 ,  H01L33/48 ,  H01L33/62 ,  H01L33/00 ,  H01L31/02 ,  H01L31/0203 ,  H01S5/02 ,  H01S5/042

CPC classification number: H01L33/486 ,  H01L24/24 ,  H01L24/82 ,  H01L24/97 ,  H01L31/0203 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/2402 ,  H01L2224/24051 ,  H01L2224/24226 ,  H01L2224/76155 ,  H01L2224/82039 ,  H01L2224/82102 ,  H01L2224/97 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/15747 ,  H01L2924/181 ,  Y10T428/24331 ,  H01L2224/82 ,  H01L2924/00

Abstract: The invention relates to a product comprising a substrate with an opto-electronic component which is contacted in a planar manner.

Abstract translation: 一种制品，包括具有接触平面的光电元件的基板。

公开(公告)号：WO2004077548A3

公开(公告)日：2005-05-12

申请号：PCT/EP2004000629

申请日：2004-01-26

Applicant: SIEMENS AG ,  SELIGER NORBERT ,  WEIDNER KARL ,  ZAPF JOERG

Inventor： SELIGER NORBERT ,  WEIDNER KARL ,  ZAPF JOERG

IPC: H01L21/60 ,  H01L23/538 ,  H01L25/07 ,  H01L23/60

CPC classification number: H01L24/82 ,  H01L23/5389 ,  H01L24/24 ,  H01L25/072 ,  H01L2224/2402 ,  H01L2224/24051 ,  H01L2224/24225 ,  H01L2224/24226 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/15787 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2224/48 ,  H01L2924/00 ,  H01L2924/2076 ,  H01L2924/01004 ,  H01L2924/00015

Abstract: The invention relates to a method for producing a device comprising a component (2) that is located on a substrate (1). The substrate (1) and component (2) form a surface contour and the component (2) comprises an electrical contact surface (210). According to said method: a layer (3) of electrically insulating material is applied to the substrate (1) and the component (2) located thereon, in such a way that said layer (3) follows the surface contour formed by the substrate (1) and the component (2); the electrical contact surface (210) of the component remains at least partially uncovered during the application of the layer (3) of electrically insulating material and/or is exposed after the application of said layer (3); and a layer (4) of electrically conductive material is applied to the layer (3) consisting of electrically insulating material and the electrical contact surface (210) of the component.

Abstract translation: 形成用于制造（1），其设置部件的基板上具有的装置的方法（2），该衬底（1）和组分（2）具有表面轮廓，并且其中所述组分（2）具有电接触表面（210），其中 - （3）的基板（1）和所述部件上的电绝缘材料（2）被施加，其中，所述层（3）的电绝缘基板（1）和组分的材料（2）形成的表面轮廓如下的层 - 至少部分地保持，该部件的电接触表面（210）的层的应用期间（3）的电绝缘材料 - 自由的和/或电绝缘材料（3）露出的层之后， - 导电材料的层（4） 被施加到电绝缘材料层（3）和所述装置的电接触表面（210）。

公开(公告)号：WO2004077547A3

公开(公告)日：2005-05-19

申请号：PCT/EP2004000574

申请日：2004-01-23

Applicant: SIEMENS AG ,  SELIGER NORBERT ,  WEIDNER KARL ,  ZAPF JOERG

Inventor： SELIGER NORBERT ,  WEIDNER KARL ,  ZAPF JOERG

IPC: H01L21/60 ,  H01L23/373 ,  H01L23/538

CPC classification number: H01L23/3735 ,  H01L24/24 ,  H01L24/82 ,  H01L2224/24011 ,  H01L2224/2402 ,  H01L2224/24051 ,  H01L2224/24225 ,  H01L2224/24226 ,  H01L2224/45124 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/15798 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/48

Abstract: According to the invention, a layer made of an electrically insulating material (3) is applied to a substrate (1) and a component (2) that is arranged thereupon in such way that said layer follows the surface contour formed by the substrate and the component.

Abstract translation: 在基板（1）和设置在其上的装置（2），电绝缘材料（3）被施加，使得它们连接到由基板和元件形成如下所述表面轮廓的层。

公开(公告)号：WO2007096018A3

公开(公告)日：2007-11-15

申请号：PCT/EP2006070026

申请日：2006-12-20

Applicant: SIEMENS AG ,  NAUNDORF JOERG ,  WEIDNER KARL ,  WULKESCH HANS

Inventor： NAUNDORF JOERG ,  WEIDNER KARL ,  WULKESCH HANS

IPC: H01L23/31 ,  H01L21/56

CPC classification number: H01L23/3164 ,  B29C63/02 ,  B29C2793/00 ,  B29L2031/3061 ,  H01L21/56 ,  H01L2924/0002 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/19041 ,  Y10T156/1054 ,  Y10T156/1092 ,  Y10T156/1093 ,  H01L2924/00

Abstract: A method for selectively producing film laminates for packaging and for insulating unpackaged electronic components and functional patterns and corresponding device. The present invention relates to a method for coating surface regions (2) of functional patterns (5) arranged on a substrate (4) and/or of surface regions (2) of semiconductor chips (6) arranged on the substrate (4). An insulation is to be effectively adapted in its properties to different requirements of functional patterns (5) and/or electronic components (6). Film regions (1) are laminated on surface regions (2) in such a way that the properties of the plastics material of the film regions (1) are adapted to the function of the film. This adaptation is individual and selective. Various films (3) are used. The method is suitable in particular for coating or packaging electronic components (6) or active and passive devices.

Abstract translation: 本发明涉及用于涂覆布置在基板（4）和/或表面区域（2）上的功能结构（5）上的表面区域（2）的方法。 2）布置在布置有半导体芯片（6）的衬底（4）上。 绝缘应该根据其性能有效地适应功能结构（5）和/或电子部件（6）的不同要求。 将膜区域（1）以这样的方式层压到表面区域（2）上，使得膜区域（1）的塑性材料的性质适合于膜的功能。 这种适应是单独的和选择性的。 使用各种薄膜（3）。 该方法特别适用于电子元件（6）或有源和无源元件的涂层或封装。

公开(公告)号：WO2005027222A3

公开(公告)日：2005-12-15

申请号：PCT/EP2004051979

申请日：2004-09-01

Applicant: SIEMENS AG ,  EUPEC GMBH ,  AUERBACH FRANZ ,  BAYERER REINHOLD ,  LICHT THOMAS ,  WEIDNER KARL

Inventor： AUERBACH FRANZ ,  BAYERER REINHOLD ,  LICHT THOMAS ,  WEIDNER KARL

IPC: H01L21/60 ,  H01L23/31 ,  H01L23/373 ,  H01L23/498 ,  H01L23/538 ,  H01L25/07

CPC classification number: H01L23/3737 ,  H01L23/3735 ,  H01L24/24 ,  H01L24/82 ,  H01L2224/24051 ,  H01L2224/24226 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/3025 ,  Y10T428/24355 ,  Y10T428/24777 ,  Y10T442/10 ,  H01L2924/00

Abstract: The invention relates to the assembly of an electrical component (3) on a substrate (2). At least one electrical insulation film (5) is provided to electrically insulate the component and at least one section (52) of the insulation film is connected to the component and the substrate, in such a way that the surface contours (51) of said section of the insulation film are moulded to the surface contours (11) formed by the component and the substrate. The assembly is characterised in that the insulation film (5) has a dielectric strength in relation to an electric field strength of more than 10 kV/mm and preferably more than 50 kV/mm. To produce the assembly, the insulation film is laminated onto the substrate, preferably by means of a vacuum. This ensures that the insulation film and the component are in extremely close contact. The component is in particular a power semiconductor component. The insulation film ensures that no electrical arcing takes place, despite the high electrical voltages used during the operation of components of this type, even on exposed parts of the component, i.e. corners or edges, in which field overshoots can occur.

Abstract translation: 本发明涉及一种电气部件（3）的组件的基板（2），其中，至少一个电绝缘膜（5）与组分所规定的部件的电绝缘性和至少一个部分（52）的绝缘膜的与基板连接，使得上 是一个由部件，并在绝缘膜的部分的表面轮廓（51）在基板的表面轮廓（11）给定的被示出。 该装置的特征在于，具有大于10千伏/毫米的电场强度，并且优选大于50千伏/毫米的电压电阻的绝缘膜（5）。 用于制造结构中，绝缘膜被层压。 这优选在真空下进行。 因此，绝缘膜和所述部件之间的特别紧密的接触得以实现。 该组件是特别是功率半导体器件。 通过绝缘膜保证了尽管在这样的设备高的电的电压，即使在装置的暴露的位置，即在角部或边缘可能引起过度的场增加的操作所使用的，就没有电弧。

公开(公告)号：WO2005013358A3

公开(公告)日：2005-07-21

申请号：PCT/EP2004051460

申请日：2004-07-12

Applicant: SIEMENS AG ,  EUPEC GMBH & CO KG ,  WEIDNER KARL ,  AUERBACH FRANZ

Inventor： WEIDNER KARL ,  AUERBACH FRANZ

IPC: H01L21/60 ,  H01L23/373 ,  H01L23/29 ,  H01L23/498 ,  H01L23/538

CPC classification number: H01L24/82 ,  H01L23/3735 ,  H01L23/3737 ,  H01L24/24 ,  H01L2224/24051 ,  H01L2224/24225 ,  H01L2224/24226 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/00

Abstract: The invention relates to an arrangement (1) of an electrical component (3) placed on a substrate (2), at least one film (5) comprising a plastic material being provided and at least one part (52) of the film being connected to the component and to the substrate in such a way that a surface contour (11) defined by the component and the substrate is represented in a surface contour (51) of the part of the film. Said film is laminated onto the component and the substrate in such a way that the film follows the topology of the arrangement consisting of the component and the substrate. Said film is in contact with the component and the substrate in a positive and non-positive manner, and comprises a composite material containing a filler that is different to the plastic material. The processability and the electrical properties of the film are influenced by the filler or the composite material obtained thereby. In this way, other functions can be integrated into the film. Said component is, for example, a power semiconductor component. An electrically insulating and thermoconductive film is used, for example. A contact surface of the power semiconductor component is electrically contacted through the film. The thermal conductivity of the film enables heat created during the operation of the power semiconductor component to be efficiently carried away.

Abstract translation: 本发明涉及一种电气部件（3）的装置（1）的基板（2），其中至少一个膜具有塑料材料（5）的存在和至少一个与该部件的膜的部分（52），连接成在所述基板上 其中由部件和衬底给出的表面轮廓（11）在薄膜部分的表面轮廓（51）中成像。 膜以这样的方式层压在部件和基板上，使得膜遵循部件 - 基板布置的拓扑结构。 该薄膜与元件和基板呈正极和非正极接触。 该薄膜具有与塑料不同的填充物的复合材料。 在填料或所得复合材料的帮助下，膜的可加工性和膜的电性质受到影响。 这样可以将更多的功能集成到箔片中。 该组件是例如功率半导体组件。 例如，使用电绝缘且导热的膜。 功率半导体部件的接触表面通过膜电接触。 由于膜的导热性，可以有效地散发功率半导体器件工作期间产生的热量。

公开(公告)号：WO2005087497A3

公开(公告)日：2006-05-04

申请号：PCT/EP2005051053

申请日：2005-03-09

Applicant: SIEMENS AG ,  KASPER MICHAEL ,  REBHAN MATTHIAS ,  WEIDNER KARL ,  WEINKE ROBERT

Inventor： KASPER MICHAEL ,  REBHAN MATTHIAS ,  WEIDNER KARL ,  WEINKE ROBERT

IPC: B41F17/24 ,  B41M20060101 ,  H01L51/00 ,  H05K1/00 ,  H05K3/00 ,  H05K3/10 ,  H05K3/12 ,  H05K3/24 ,  B41M3/00 ,  B41J2/07 ,  H01L51/40

CPC classification number: H01L51/0005 ,  B41F17/24 ,  H01L51/0016 ,  H05K1/0284 ,  H05K3/0079 ,  H05K3/108 ,  H05K3/125 ,  H05K3/245 ,  H05K2201/09036 ,  H05K2203/013 ,  H05K2203/1476

Abstract: The highly topographic surface (2) of an electronic component (1) is provided with a layer (8) in an ink jet printing process during which some areas (10) are subjected to an intensified printing.

Abstract translation: 的电子部件（1）的hochtopografische表面（2）是在喷墨印刷过程中设置有层（8）。 做一些区域（10）打印加强。

公开(公告)号：WO2005066392A3

公开(公告)日：2005-09-22

申请号：PCT/EP2004053464

申请日：2004-12-14

Applicant: SIEMENS AG ,  KASPAR MICHAEL ,  REBHAN MATTHIAS ,  WEIDNER KARL

Inventor： KASPAR MICHAEL ,  REBHAN MATTHIAS ,  WEIDNER KARL

IPC: C23C18/16 ,  C25D5/02 ,  H01L21/288 ,  H01L21/768 ,  H05K1/00 ,  H05K1/18 ,  H05K3/10 ,  H05K3/24 ,  H05K3/40

CPC classification number: C25D5/022 ,  C23C18/1605 ,  H01L21/2885 ,  H01L21/76838 ,  H05K1/0284 ,  H05K1/183 ,  H05K3/108 ,  H05K3/243 ,  H05K3/403 ,  H05K2201/09036 ,  H05K2203/0191

Abstract: According to the invention, the surface of a substrate is structured with the aid of a film, said surface especially representing a surface having a significant topography.

Abstract translation: 一衬底的表面上加上布局图案的膜的助剂。 表面特别是用强地形的区域。