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公开(公告)号：CN103725215A
公开(公告)日：2014-04-16
申请号：CN201310553415.7
申请日：2009-11-24
Applicant: 日东电工株式会社
Inventor： 三隅贞仁
IPC: C09J7/02 , C09J133/00 , C09J163/00 , C09J161/06 , C09J11/04 , H01L21/301 , H01L21/52
CPC classification number: H01L21/561 , C09J7/20 , C09J2201/36 , C09J2203/326 , C09J2433/00 , C09J2461/00 , C09J2463/00 , H01L21/67132 , H01L21/6835 , H01L23/3121 , H01L24/27 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2221/68336 , H01L2224/27436 , H01L2224/29 , H01L2224/29101 , H01L2224/2919 , H01L2224/29198 , H01L2224/2929 , H01L2224/29311 , H01L2224/29318 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29364 , H01L2224/29371 , H01L2224/29386 , H01L2224/29393 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/83101 , H01L2224/83191 , H01L2224/8385 , H01L2224/92 , H01L2224/92247 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/01057 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/15747 , H01L2924/181 , H01L2924/3025 , H01L2924/0635 , H01L2924/066 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2924/05442 , H01L2924/05432 , H01L2924/0532 , H01L2924/04642 , H01L2924/05042 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: 本发明的半导体装置制造用薄膜卷，通过将半导体装置制造用薄膜以卷筒状卷绕在圆柱状的卷芯上而得到，其特征在于，所述卷芯的直径在7.5cm～15.5cm的范围内。
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公开(公告)号：CN102227482A
公开(公告)日：2011-10-26
申请号：CN200980147958.0
申请日：2009-11-24
Applicant: 日东电工株式会社
Inventor： 三隅贞仁
IPC: C09J7/02 , H01L21/301 , H01L21/52
CPC classification number: H01L21/561 , C09J7/20 , C09J2201/36 , C09J2203/326 , C09J2433/00 , C09J2461/00 , C09J2463/00 , H01L21/67132 , H01L21/6835 , H01L23/3121 , H01L24/27 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2221/68336 , H01L2224/27436 , H01L2224/29 , H01L2224/29101 , H01L2224/2919 , H01L2224/29198 , H01L2224/2929 , H01L2224/29311 , H01L2224/29318 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29364 , H01L2224/29371 , H01L2224/29386 , H01L2224/29393 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/83101 , H01L2224/83191 , H01L2224/8385 , H01L2224/92 , H01L2224/92247 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/01057 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/15747 , H01L2924/181 , H01L2924/3025 , H01L2924/0635 , H01L2924/066 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2924/05442 , H01L2924/05432 , H01L2924/0532 , H01L2924/04642 , H01L2924/05042 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: 本发明的半导体装置制造用薄膜卷，通过将半导体装置制造用薄膜以卷筒状卷绕在圆柱状的卷芯上而得到，其特征在于，所述卷芯的直径在7.5cm～15.5cm的范围内。
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公开(公告)号：CN101617390A
公开(公告)日：2009-12-30
申请号：CN200880005676.2
申请日：2008-01-28
Applicant: 日东电工株式会社
IPC: H01L21/301 , C09J7/02 , C09J11/04 , C09J133/00 , C09J161/00 , C09J163/00 , H01L21/52 , H01L21/683
CPC classification number: H01L23/3121 , C08G18/4045 , C08G18/6254 , C08L33/08 , C09J175/04 , H01L21/6836 , H01L24/27 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L2221/68327 , H01L2224/274 , H01L2224/27436 , H01L2224/29 , H01L2224/29101 , H01L2224/2919 , H01L2224/29198 , H01L2224/2929 , H01L2224/29311 , H01L2224/29316 , H01L2224/29318 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29364 , H01L2224/29371 , H01L2224/29386 , H01L2224/29393 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/83191 , H01L2224/83855 , H01L2224/8388 , H01L2224/83885 , H01L2224/85201 , H01L2224/85205 , H01L2224/92247 , H01L2225/0651 , H01L2225/06572 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01016 , H01L2924/01019 , H01L2924/0102 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/01073 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10253 , H01L2924/15747 , H01L2924/15788 , H01L2924/181 , H01L2924/20104 , H01L2924/20105 , H01L2924/20106 , H01L2924/3011 , H01L2924/3025 , Y10T428/24355 , H01L2924/00014 , H01L2924/0635 , H01L2924/066 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2924/05442 , H01L2924/05432 , H01L2924/0532 , H01L2924/04642 , H01L2924/05042 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
Abstract: 本发明提供切割工序时的胶粘性及拾取工序时的剥离性均控制良好的切割/芯片接合薄膜及其制造方法。本发明的切割/芯片接合薄膜，在基材上具有粘合剂层，并且在该粘合剂层上具有芯片接合层，其特征在于，所述芯片接合层中粘合剂层侧的算术平均粗糙度X(μm)为0.015μm～1μm，所述粘合剂层中芯片接合层侧的算术平均粗糙度Y(μm)为0.03μm～1μm，并且所述X与Y之差的绝对值为0.015以上。
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公开(公告)号：CN101506948A
公开(公告)日：2009-08-12
申请号：CN200680055616.2
申请日：2006-09-12
Applicant: 日东电工株式会社
IPC: H01L21/301 , H01L21/52
CPC classification number: H01L24/83 , C09J7/20 , C09J2201/36 , C09J2201/606 , C09J2201/61 , C09J2203/326 , C09J2205/31 , C09J2433/00 , H01L21/67132 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/3142 , H01L24/27 , H01L24/29 , H01L24/48 , H01L24/85 , H01L2221/68327 , H01L2221/68336 , H01L2224/274 , H01L2224/29 , H01L2224/29101 , H01L2224/2919 , H01L2224/2929 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29386 , H01L2224/29393 , H01L2224/48 , H01L2224/83191 , H01L2224/83855 , H01L2224/8388 , H01L2224/85 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01016 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01055 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10253 , H01L2924/3025 , Y10T428/26 , H01L2924/0675 , H01L2924/0635 , H01L2924/066 , H01L2924/00 , H01L2924/3512 , H01L2924/05432 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: 本发明的切割/芯片焊接膜是在支撑基材上依次层压有粘合剂层和芯片胶粘用胶粘剂层的切割/芯片焊接膜，其特征在于，上述粘合剂层的厚度为10～80μm，23℃下的储藏弹性率为1×104～1×1010Pa。
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公开(公告)号：CN100337322C
公开(公告)日：2007-09-12
申请号：CN200410046402.1
申请日：2004-05-28
Applicant: 日东电工株式会社
IPC: H01L21/78 , H01L21/304
CPC classification number: H01L21/6836 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2221/68327 , H01L2224/274 , H01L2224/2919 , H01L2224/83191 , H01L2224/8385 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01016 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/0665 , H01L2924/07802 , H01L2924/3025 , Y10T156/1052 , Y10T156/1062 , Y10T156/107 , Y10T156/1077 , Y10T428/218 , Y10T428/31703 , H01L2924/00
Abstract: 本发明的切割芯片焊接薄膜包含在支持基材(1)上的压敏粘合剂层(2)和在所述压敏粘合剂层(2)上的芯片焊接粘合剂层(3)，其中在所述压敏粘合剂层(2)和芯片焊接粘合剂层(3)之间的界面中的释放力在界面(A)和界面(B)之间是不同的，所述的界面(A)对应于芯片焊接粘合剂层(3)中的工件附着区域(3a)，且所述的界面(B)对应于其它区域(3b)的部分或全部，并且界面(A)的释放力高于界面(B)的释放力。根据本发明，可以提供在切割工件的保持力和在将切割碎片工件与芯片焊接粘合剂层一起释放的释放力之间的平衡方面优异的切割芯片焊接薄膜。
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Patent Agency Ranking
公开(公告)号：CN1630050A
公开(公告)日：2005-06-22
申请号：CN200410100665.6
申请日：2004-12-07
Applicant: 日东电工株式会社
CPC classification number: H01L24/85 , H01L21/6836 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/92 , H01L25/0657 , H01L25/50 , H01L2221/68327 , H01L2224/274 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/83191 , H01L2224/83192 , H01L2224/83856 , H01L2224/83885 , H01L2224/85001 , H01L2224/85205 , H01L2224/92 , H01L2224/92247 , H01L2225/0651 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10253 , H01L2924/15747 , H01L2924/15788 , H01L2924/181 , H01L2924/20103 , H01L2924/20104 , H01L2924/20105 , H01L2924/20106 , H01L2924/3011 , H01L2224/78 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2924/20752
Abstract: 一种半导体装置的制造方法，包括通过介入胶粘片将半导体元件临时固着在被粘附体上的临时固着工序、和不经过加热工序而直接进行引线接合的引线接合工序，且所述胶粘片相对于被粘附体的临时固着时的剪切胶粘力在0.2MPa以上。由此，可以提供在抑制合格率下降的同时将制造工序简略化的半导体装置的制造方法、用于该方法的胶粘片和由该方法得到的半导体装置。
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公开(公告)号：CN1574286A
公开(公告)日：2005-02-02
申请号：CN200410046402.1
申请日：2004-05-28
Applicant: 日东电工株式会社
IPC: H01L21/78 , H01L21/304
CPC classification number: H01L21/6836 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2221/68327 , H01L2224/274 , H01L2224/2919 , H01L2224/83191 , H01L2224/8385 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01016 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/0665 , H01L2924/07802 , H01L2924/3025 , Y10T156/1052 , Y10T156/1062 , Y10T156/107 , Y10T156/1077 , Y10T428/218 , Y10T428/31703 , H01L2924/00
Abstract: 本发明的切割芯片焊接薄膜包含在支持基材(1)上的压敏粘合剂层(2)和在所述压敏粘合剂层(2)上的芯片焊接粘合剂层(3)，其中在所述压敏粘合剂层(2)和芯片焊接粘合剂层(3)之间的界面中的释放力在界面(A)和界面(B)之间是不同的，所述的界面(A)对应于芯片焊接粘合剂层(3)中的工件附着区域(3a)，且所述的界面(B)对应于其它区域(3b)的部分或全部，并且界面(A)的释放力高于界面(B)的释放力。根据本发明，可以提供在切割工件的保持力和在将切割碎片工件与芯片焊接粘合剂层一起释放的释放力之间的平衡方面优异的切割芯片焊接薄膜。
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公开(公告)号：CN1175016C
公开(公告)日：2004-11-10
申请号：CN99812777.9
申请日：1999-09-02
Applicant: 日东电工株式会社
CPC classification number: H01B3/306 , C08G18/025 , Y10S525/907 , Y10T428/31721
Abstract: 提供一种具有下述式(I)所示结构单元的芳香族聚碳化二亚胺、以及用这种芳香族聚碳化二亚胺形成的聚碳化二亚胺溶液、聚碳化二亚胺片材和绝缘被覆电线。这种芳香族聚碳化二亚胺在有机溶剂中的溶解性高，加工性良好，而且具有优良的耐热性和耐湿性，绝缘被覆电线在高压高湿条件下的耐久性方面具有很高的可靠性。(式中，R为3个以上碳原子的有机基团，n表示2～300的整数)。
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公开(公告)号：CN1325412A
公开(公告)日：2001-12-05
申请号：CN99812777.9
申请日：1999-09-02
Applicant: 日东电工株式会社
CPC classification number: H01B3/306 , C08G18/025 , Y10S525/907 , Y10T428/31721
Abstract: 提供一种具有式(Ⅰ)所示结构单元的芳香族聚碳化二亚胺、以及用这种芳香族聚碳化二亚胺形成的聚碳化二亚胺溶液、聚碳化二亚胺片材和绝缘被覆电线。这种芳香族聚碳化二亚胺在有机溶剂中的溶解性高,加工性良好,而且具有优良的耐热性和耐湿性,绝缘被覆电线在高压高湿条件下的耐久性方面具有很高的可靠性。(式中,R为3个以上碳原子的有机基团,n表示2～300的整数)。
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