Abstract:
A method for bonding an LED wafer, a method for manufacturing an LED chip, and a bonding structure are provided. The method for bonding an LED wafer includes the following steps. A first metal film is formed on an LED wafer. A second metal film is formed on a substrate. A bonding material layer whose melting point is lower than or equal to about 110°C is formed on the surface of the first metal film. The LED wafer is placed on the substrate. The bonding material layer is heated at a pre-solid reaction temperature for a pre-solid time to perform a pre-solid reaction. The bonding material layer is heated at a diffusion reaction temperature for a diffusing time to perform a diffusion reaction, wherein the melting points of the first and the second inter-metallic layers after diffusion reaction are higher than about 110°C.
Abstract:
There is provided a flip-chip mounting resin composition which can be used for a flip-chip mounting process that is high in productivity and reliability and thus can be applicable to a flip-chip mounting of a next-generation LSI. This flip-chip mounting resin composition comprises a resin, metal particles and a convection additive 12 that boils upon heating the resin 13. Upon the heating of the resin 13, the metal particles melt and the boiling convection additive 12 convects within the resin 13. This flip-chip mounting resin composition is supplied between a circuit substrate 10 and a semiconductor chip 20, and subsequently the resin 13 is heated so that the molten metal particles self-assemble into the region between each electrode of the circuit substrate and each electrode of the semiconductor chip. As a result, an electrical connection is formed between each electrode of the circuit substrate and each electrode of the semiconductor chip. Finally, the resin 13 is allowed to cure so that the semiconductor chip 20 is secured to the circuit substrate 10, which leads to in a formation of a flip chip assembly.
Abstract:
A joining material (101) includes: at least one type of element at 0.1 wt% to 30 wt%, the element being capable of forming a compound with each of tin and carbon; and tin at 70 wt% to 99.9 wt% as a main component. The at least one type of element comprises at least one selected from the group consisting of titanium, zirconium and vanadium. The joining material (101) is used for fabrication of a semiconductor device, wherein the joining material (101) is joined to a carbon base (102) upon heating up to 1200°C with formation of a compound (103) of carbon, tin and the element being capable of forming a compound with each of tin and carbon at the interface between the joining material (101) and the carbon base (102), and then a light emitting element (106) is joined to the jointing material (101) upon heating up to 350°C. The joining material preferably comprises the element capable of forming a compound with each of tin and carbon at 0.1 wt% to 10 wt%, more preferably at 5 wt% to 10 wt%.
Abstract:
A method of connecting elements (102-106) of a plurality of elements (102-106) to one another is described. The method comprises applying solder material (110) on a first element (102) of the plurality of elements (102-106). The solder material (110) comprises a liquidus temperature. The method comprises applying sinter material (108) on a second element (103) of the plurality of elements (102-104). The sinter material (108) comprises a sintering temperature. The method comprises assembling the first element (102) and a third element (104, 504) of the plurality of elements (102-106), assembling the second element (103) and a fourth element (106) of the plurality of elements (102-106), soldering the first element (102) and the third element (104) to one another, and sintering the second element (103) and the fourth element (106) to one another. In order to accomplish short process duration, reduced costs and an increased throughput, the sintering and the soldering are simultaneously executed.
Abstract:
The present invention is characterized by comprising a two-pack adhesive of an A agent selected from components, an acrylic monomer, a peroxide, a reducing agent, an epoxy resin precursor and a curing agent and containing at least one or two of the acrylic monomer, the peroxide and the reducing agent, and a B agent containing all of the remaining components which are not selected in the A agent. The use of this adhesive makes it possible to stably obtain the bonding free from a thermal stress with the excellent heat resistance and the good reliability.