Wiring board and manufacturing method thereof
    33.
    发明公开
    Wiring board and manufacturing method thereof 审中-公开
    线路板及其制造方法

    公开(公告)号:EP1494516A2

    公开(公告)日:2005-01-05

    申请号:EP04253645.8

    申请日:2004-06-17

    Abstract: A wiring board is disclosed that includes a first insulating layer (110), a conductor (155,160,170) which is formed on a surface of the first insulating layer (110), and a second insulating layer (180) which is formed on surfaces of the first insulating layer (110) and of the conductor (155,160,170). The wiring board is provided with a semispherical-shaped or conical-shaped hole-forming portion (200) which penetrates through the second insulating layer (180) into the conductor (155,160,170).

    Abstract translation: 公开了一种布线板,其包括第一绝缘层(110),形成在第一绝缘层(110)的表面上的导体(155,160,170)以及形成在第一绝缘层(110)的表面上的第二绝缘层(180) 第一绝缘层(110)和导体(155,160,170)。 布线板设置有穿过第二绝缘层(180)进入导体(155,160,170)的半球形或圆锥形的孔形成部分(200)。

    CAPACITIVE MICROMACHINED ULTRASONIC TRANSDUCER (CMUT) WITH THROUGH-SUBSTRATE VIA (TSV) SUBSTRATE PLUG
    37.
    发明公开
    CAPACITIVE MICROMACHINED ULTRASONIC TRANSDUCER (CMUT) WITH THROUGH-SUBSTRATE VIA (TSV) SUBSTRATE PLUG 审中-公开
    KAPAZITIVER MIKROBEARBEITETER超声波清洗机(CMUT)MIT SUBSTRATSTECKER ZUR SUBSTRAT-DURCHKONTAKTIERUNG(TSV)

    公开(公告)号:EP2988883A1

    公开(公告)日:2016-03-02

    申请号:EP14756616.0

    申请日:2014-02-27

    Abstract: A Capacitive Micromachined Ultrasonic Transducer (CMUT) device includes at least one CMUT cell including a first substrate of a single crystal material having a top side including a patterned dielectric layer thereon including a thick and a thin dielectric region, and a through-substrate via (TSV) extending a full thickness of the first substrate. The TSV is formed of the single crystal material, is electrically isolated by isolation regions in the single crystal material, and is positioned under a top side contact area of the first substrate. A membrane layer is bonded to the thick dielectric region and over the thin dielectric region to provide a movable membrane over a micro-electro-mechanical system (MEMS) cavity. A metal layer is over the top side substrate contact area and over the movable membrane including coupling of the top side substrate contact area to the movable membrane.

    Abstract translation: 电容式微加工超声波传感器(CMUT)装置包括至少一个CMUT单元,其包括单晶材料的第一基板,其具有包括厚和薄的电介质区域的在其上的图案化电介质层的顶侧,以及贯穿基板通孔 TSV)延伸第一基板的整个厚度。 TSV由单晶材料形成,通过单晶材料中的隔离区电隔离,并且位于第一基板的顶侧接触区域的下方。 膜层结合到厚电介质区域和薄介电区域上,以在微机电系统(MEMS)空腔上提供可移动膜。 金属层在顶侧基板接触区域之上并且在可移动膜上方,包括顶侧基板接触区域与可动膜的耦合。

    WIRING BOARD AND MOUNTING STRUCTURE USING SAME
    38.
    发明公开
    WIRING BOARD AND MOUNTING STRUCTURE USING SAME 审中-公开
    接线板和安装结构使用相同

    公开(公告)号:EP2981158A1

    公开(公告)日:2016-02-03

    申请号:EP14774851.1

    申请日:2014-03-26

    Abstract: A wiring board (3) in accordance with an embodiment of the invention includes: an inorganic insulating layer (13) having a via hole (V) formed so as to penetrate the inorganic insulating layer (13) in a thickness direction thereof; a conductive layer (11) disposed on the inorganic insulating layer (13); and a via conductor (12) which adheres to an inner wall (W) of the via hole (V) and is connected with the conductive layer (11). The inorganic insulating layer (13) includes a first section (33) including a plurality of inorganic insulating particles (16) partly connected to each other, and a resin portion (18) located in gaps (17) between the inorganic insulating particles (16), and a second section (34) which is interposed between the first section (33) and the via conductor (12), including a plurality of inorganic insulating particles (16) partly connected to each other, and a conducting portion (19) composed of part of the via conductor (12) which is located in gaps (17) between the inorganic insulating particles (16).

    Abstract translation: 本发明的一个实施方式的布线基板(3)具备:无机绝缘层(13),其具有在厚度方向贯通无机绝缘层(13)的通路孔(V) 设置在所述无机绝缘层(13)上的导电层(11); 和通孔导体(12),其粘附到通孔(V)的内壁(W)并与导电层(11)连接。 无机绝缘层(13)包括:包含部分彼此连接的多个无机绝缘粒子(16)的第一部分(33)和位于无机绝缘粒子(16)之间的间隙(17)中的树脂部分(18) )以及介于第一部分(33)和通孔导体(12)之间的包括部分彼此连接的多个无机绝缘粒子(16)的第二部分(34)以及导电部分(19) 由位于无机绝缘粒子(16)之间的间隙(17)中的部分过孔导体(12)构成。

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