公开(公告)号：EP3099632A2

公开(公告)日：2016-12-07

申请号：EP15702575.0

申请日：2015-01-30

申请人： The University Of Manchester

发明人： CASIRAGHI, Cinzia ,  YANG, Huafeng

IPC分类号： C01B21/064 ,  C01G39/06 ,  C01G41/00 ,  C01B17/20 ,  C01B19/00 ,  C01G1/12 ,  H01L31/0264 ,  H01L31/08

CPC分类号： C09D11/52 ,  B01D71/02 ,  B05D7/24 ,  B82Y30/00 ,  B82Y40/00 ,  C01B17/20 ,  C01B19/007 ,  C01B21/0648 ,  C01G1/12 ,  C01G39/06 ,  C01G41/00 ,  C01P2002/82 ,  C01P2002/84 ,  C01P2002/85 ,  C01P2004/02 ,  C01P2004/04 ,  C01P2004/24 ,  C09D11/32 ,  C09D11/38 ,  H01L29/78681 ,  H01L29/78696 ,  H01L31/0264 ,  H01L31/03044 ,  H01L31/0324 ,  H01L31/0445 ,  H01L31/08 ,  H01L31/1136 ,  Y10S977/755 ,  Y10S977/90 ,  Y10S977/948

摘要： This invention relates to a method for exfoliating inorganic layered compounds to form two- dimensional (2D) inorganic compounds. The exfoliation is carried out in aqueous media in the present of polycyclic aromatic compounds. The invention also relates to aqueous suspensions of two-dimensional compounds which arise from the exfoliation method. The invention further relates to methods of forming thin films of two-dimensional compounds from suspensions and to devices comprising thin films of two-dimensional (2D) inorganic compounds.

摘要翻译： 本发明涉及剥离无机层状化合物以形成二维（2D）无机化合物的方法。 剥离在多环芳族化合物存在下的水性介质中进行。 本发明还涉及由剥离法产生的二维化合物的水性悬浮液。 本发明还涉及从悬浮液和包括二维（2D）无机化合物的薄膜的器件形成二维化合物的薄膜的方法。

公开(公告)号：EP2901491A4

公开(公告)日：2016-06-22

申请号：EP13841126

申请日：2013-06-12

申请人： INTEL CORP

发明人： DEWEY GILBERT ,  CHAU ROBERT S ,  RADOSAVLJEVIC MARKO ,  THEN HAN WUI ,  CLENDENNING SCOTT B ,  PILLARISETTY RAVI

IPC分类号： H01L29/786 ,  H01L21/18 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

CPC分类号： H01L29/66803 ,  B82Y10/00 ,  H01L21/2233 ,  H01L21/228 ,  H01L21/28264 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/20 ,  H01L29/42392 ,  H01L29/66522 ,  H01L29/78681 ,  H01L29/78696

公开(公告)号：EP2815423A2

公开(公告)日：2014-12-24

申请号：EP13749940.6

申请日：2013-02-12

申请人： QuNano AB

发明人： OHLSSON, Jonas ,  BJORK, Mikael

IPC分类号： H01L21/20 ,  B82Y10/00 ,  B82Y40/00 ,  C30B29/38 ,  C30B29/40 ,  H01L29/06

CPC分类号： H01L21/0254 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/30612 ,  H01L27/0207 ,  H01L27/0605 ,  H01L27/085 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/0676 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/78642 ,  H01L29/78681 ,  H01L29/812 ,  H01L29/861 ,  H01L29/872

摘要： GaN based nanowires are used to grow high quality, discreet base elements with c-plane top surface for fabrication of various semiconductor devices, such as diodes and transistors for power electronics.

公开(公告)号：EP2650905A3

公开(公告)日：2014-10-01

申请号：EP13003426.7

申请日：2005-06-02

申请人： The Board of Trustees of the University of Illinois

发明人： Nuzzo, Ralph G. ,  Rogers, John, A. ,  Menard, Etienne ,  Lee, Keon Jae ,  Khang, Dahl-Young ,  Sun, Yugang ,  Meitl, Matthew ,  Zhu, Zhengtao

IPC分类号： H01L21/30 ,  H01L21/326 ,  H01L21/4763 ,  H01L23/48 ,  H01L27/01 ,  H01L29/06 ,  H01L29/08 ,  H01L21/02

CPC分类号： H01L29/76 ,  B81C2201/0185 ,  B82Y10/00 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02628 ,  H01L21/308 ,  H01L21/322 ,  H01L21/6835 ,  H01L23/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/29 ,  H01L24/32 ,  H01L24/80 ,  H01L24/83 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0753 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/04 ,  H01L29/06 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/12 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/78696 ,  H01L31/0392 ,  H01L31/03926 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1896 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/32 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/03 ,  H01L2224/0332 ,  H01L2224/0345 ,  H01L2224/03614 ,  H01L2224/0362 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/08225 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/80 ,  H01L2224/80006 ,  H01L2224/80121 ,  H01L2224/80862 ,  H01L2224/80895 ,  H01L2224/83 ,  H01L2224/83005 ,  H01L2224/83121 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/8385 ,  H01L2224/83862 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2224/95 ,  H01L2224/97 ,  H01L2924/00012 ,  H01L2924/01032 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15159 ,  H01L2924/15162 ,  H01L2924/15788 ,  H01L2924/1579 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S977/707 ,  Y10S977/724 ,  H01L2924/00014 ,  H01L2924/00

摘要： The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

公开(公告)号：EP2122672A4

公开(公告)日：2014-10-01

申请号：EP08721837

申请日：2008-03-05

申请人： RICOH CO LTD

发明人： TANO TAKANORI ,  SUZUKI KOEI ,  TSUDA YUSUKE

IPC分类号： H01L51/10

CPC分类号： H01L51/102 ,  H01L27/1292 ,  H01L29/78681 ,  H01L51/0012 ,  H01L51/0022 ,  H01L51/0035 ,  H01L51/0545

公开(公告)号：EP2005254A4

公开(公告)日：2014-07-16

申请号：EP07760030

申请日：2007-04-03

申请人： VERSATILIS LLC

发明人： JAIN AJAYKUMAR R

IPC分类号： G03G7/00 ,  H01L21/18 ,  H01L21/683 ,  H01L21/762 ,  H01L27/12 ,  H01L29/786 ,  H01L33/00 ,  H01S5/02

CPC分类号： H01L21/187 ,  H01L21/6835 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/78603 ,  H01L29/78681 ,  H01L33/0079 ,  H01L2221/68359 ,  H01L2924/19041 ,  H01S5/0207 ,  Y10T156/12 ,  Y10T428/24802

摘要： Various embodiments of fabricated crystalline-based structures for the electronics, optoelectronics and optics industries are disclosed. Each of these structures is created in part by cleaving a donee layer from a crystalline donor, such as a micaceous/lamellar mass comprising a plurality of lamelliform sheets separable from each other along relatively weak cleavage planes. Once cleaved, one or more of these lamelliform sheets become the donee layer. The donee layer may be used for a variety of purposes, including a crystalline layer for supporting heteroepitaxial growth of one or more semiconductor layers thereon, an insulating layer, a barrier layer, a planarizing layer and a platform for creating useful structures, among others.

公开(公告)号：EP2436037A4

公开(公告)日：2013-10-02

申请号：EP10781242

申请日：2010-05-27

申请人： KOVIO INC

发明人： KAMATH ARVIND ,  KOCSIS MICHAEL ,  MCCARTHY KEVIN ,  WONG GLORIA MAN TING

IPC分类号： H01L31/02 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L29/78603 ,  H01L27/1218 ,  H01L29/78681 ,  H01L29/7869

摘要： Semiconductor devices on a diffusion barrier coated metal substrates, and methods of making the same are disclosed. The semiconductor devices include a metal substrate, a diffusion barrier layer on the metal substrate, an insulator layer on the diffusion barrier layer, and a semiconductor layer on the insulator layer. The method includes forming a diffusion barrier layer on the metal substrate, forming an insulator layer on the diffusion barrier layer; and forming a semiconductor layer on the insulator layer. Such diffusion barrier coated substrates prevent diffusion of metal atoms from the metal substrate into a semiconductor device formed thereon.

公开(公告)号：EP2571043A1

公开(公告)日：2013-03-20

申请号：EP11780349.4

申请日：2011-04-22

申请人： Panasonic Corporation

发明人： SUZUKI, Takeshi ,  HIRANO, Koichi

IPC分类号： H01L21/336 ,  G02F1/1368 ,  G09F9/00 ,  G09F9/30 ,  H01L29/41 ,  H01L29/417 ,  H01L29/786 ,  H01L51/50

CPC分类号： H01L29/78603 ,  H01L27/0688 ,  H01L27/1218 ,  H01L27/1251 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/3246 ,  H01L29/41733 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78681 ,  H01L29/7869 ,  H01L51/0023 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/0545 ,  H01L2251/5338

摘要： There is provided a method for manufacturing a flexible semiconductor device. The method of the present invention comprises the steps of: (A) providing a metal foil; (B) forming an insulating layer on the metal foil, the insulating layer having a portion serving as a gate insulating film; (C) forming a supporting substrate on the insulating layer; (D) etching away a part of the metal foil to form a source electrode and a drain electrode therefrom; (E) forming a semiconductor layer in a clearance portion located between the source electrode and the drain electrode by making use of the source and drain electrodes as a bank member; and (F) forming a resin film layer over the insulating layer such that the resin film layer covers the semiconductor layer, the source electrode and the drain electrode. In the step (F), a part of the resin film layer interfits with the clearance portion located between the source and drain electrodes.

摘要翻译： 提供了一种用于制造柔性半导体器件的方法。 本发明的方法包括以下步骤：（A）提供金属箔; （B）在所述金属箔上形成绝缘层，所述绝缘层具有用作栅极绝缘膜的部分; （C）在所述绝缘层上形成支撑基板; （D）蚀刻一部分金属箔从而形成源电极和漏电极; （E）通过利用源电极和漏电极作为堤构件在位于源电极和漏电极之间的间隙部分中形成半导体层; 和（F）在所述绝缘层上形成树脂膜层，使得所述树脂膜层覆盖所述半导体层，所述源电极和所述漏电极。 在步骤（F）中，树脂膜层的一部分与位于源极和漏极之间的间隙部分相互配合。

公开(公告)号：EP1974390B1

公开(公告)日：2013-02-27

申请号：EP06843761.5

申请日：2006-12-27

申请人： Ricoh Company, Ltd.

发明人： KONDO, Hiroshi

IPC分类号： H01L29/786 ,  H01L21/288 ,  H01L21/336 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40 ,  H01L51/10 ,  H01L51/00

CPC分类号： H01L51/0554 ,  H01L27/283 ,  H01L29/78642 ,  H01L29/78681 ,  H01L29/7869 ,  H01L51/0003 ,  H01L51/0023 ,  H01L51/052 ,  H01L51/0529 ,  H01L51/0545 ,  H01L51/105

公开(公告)号：EP2348533A3

公开(公告)日：2012-06-06

申请号：EP11153241.2

申请日：2006-07-11

申请人： PEREGRINE SEMICONDUCTOR CORPORATION

发明人： Brindle, Christopher, N. ,  Stuber, Michael, A. ,  Kelly, Dylan, J. ,  Kemerling, Clint, L. ,  Imthurn, George, P. ,  Welstand, Robert, B. ,  Burgener, Mark, L.

IPC分类号： H01L29/786 ,  H01P1/15

CPC分类号： H03K17/162 ,  H01L29/0649 ,  H01L29/1095 ,  H01L29/78609 ,  H01L29/78615 ,  H01L29/78681 ,  H01L29/78684 ,  H03K17/687 ,  H03K2217/0018

摘要： An accumulated charge control (ACC) floating body MOSFET (ACC MOSFET), adapted to control nonlinear response of the MOSFET when the MOSFET is operated in an accumulated charge regime, comprising:
a) a MOSFET having a floating body, wherein the floating body MOSFET selectively operates in the accumulated charge regime, and wherein accumulated charge is present in the body of the floating body MOSFET when the MOSFET operates in the accumulated charge regime; and
b) an accumulated charge sink (ACS) operatively coupled to the body of the MOSFET, wherein the ACS removes or otherwise controls the accumulated charge in the MOSFET body.