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1.
公开(公告)号:KR101752376B1
公开(公告)日:2017-06-29
申请号:KR1020117016910
申请日:2009-12-18
申请人: 에이티아이 테크놀로지스 유엘씨
CPC分类号: G06F17/5068 , H01L23/3128 , H01L23/49811 , H01L23/49816 , H01L23/525 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/81 , H01L24/85 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L2224/02313 , H01L2224/02331 , H01L2224/0239 , H01L2224/0333 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05644 , H01L2224/05647 , H01L2224/1134 , H01L2224/11462 , H01L2224/13024 , H01L2224/13111 , H01L2224/13116 , H01L2224/13144 , H01L2224/13147 , H01L2224/14135 , H01L2224/14136 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48599 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/73207 , H01L2224/81121 , H01L2224/81191 , H01L2224/81193 , H01L2224/81815 , H01L2224/85181 , H01L2224/85424 , H01L2224/85439 , H01L2224/92127 , H01L2224/92163 , H01L2224/94 , H01L2225/0651 , H01L2225/06513 , H01L2225/06527 , H01L2225/06568 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01072 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/1433 , H01L2924/1461 , H01L2924/15311 , H01L2924/181 , H01L2924/19107 , H01L2924/00014 , H01L2924/01024 , H01L2224/11 , H01L2224/131 , H01L2924/00013 , H01L2924/00 , H01L2924/00012
摘要: 재분배층(RDL)을포함하는집적회로(IC) 제품이제공되며, 재분배층(RDL)은 IC 내에서전기적정보를하나의위치로부터또 하나의위치로분배하도록구성된적어도하나의전도성층을갖는다. RDL은또한복수의와이어본드패드들및 복수의솔더패드들을포함한다. 복수의솔더패드들각각은 RDL과직접적으로전기적통신을하는솔더가용성물질을포함한다.
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公开(公告)号:KR1020150038364A
公开(公告)日:2015-04-08
申请号:KR1020157004946
申请日:2013-08-09
申请人: 미쓰비시덴키 가부시키가이샤
IPC分类号: H01L23/36 , H01L23/13 , H01L23/373 , H01L23/492 , H01L25/07 , H01L23/00
CPC分类号: H05K1/0203 , H01L23/13 , H01L23/36 , H01L23/3735 , H01L23/492 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/84 , H01L24/85 , H01L24/92 , H01L25/07 , H01L25/072 , H01L25/18 , H01L2224/04026 , H01L2224/04034 , H01L2224/04042 , H01L2224/0603 , H01L2224/06181 , H01L2224/29111 , H01L2224/32245 , H01L2224/37012 , H01L2224/37147 , H01L2224/4005 , H01L2224/40105 , H01L2224/4024 , H01L2224/4118 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/4824 , H01L2224/48472 , H01L2224/49175 , H01L2224/73263 , H01L2224/73265 , H01L2224/83424 , H01L2224/83447 , H01L2224/8346 , H01L2224/83801 , H01L2224/84447 , H01L2224/84801 , H01L2224/85205 , H01L2224/92247 , H01L2924/10254 , H01L2924/10272 , H01L2924/1033 , H01L2924/1203 , H01L2924/13055 , H01L2924/13091 , H01L2924/15724 , H01L2924/15747 , H01L2924/1576 , H01L2924/16152 , H01L2924/16172 , H01L2924/16251 , H01L2924/181 , H01L2924/19107 , H01L2224/48247 , H01L2924/00012 , H01L2224/291 , H01L2924/014 , H01L2924/00014 , H01L2224/92252 , H01L2224/85 , H01L2224/40499 , H01L2224/8546 , H01L2224/85424 , H01L2224/85447 , H01L2924/01074 , H01L2224/3716 , H01L2224/37124 , H01L2924/01083 , H01L2924/01051 , H01L2924/00 , H01L2924/207 , H01L2224/48624 , H01L2924/00011 , H01L2224/48647 , H01L2224/4866 , H01L2224/48824 , H01L2224/4886 , H01L2224/48747 , H01L2224/48847 , H01L2224/48724 , H01L2224/4876 , H01L2924/013 , H01L2924/01029 , H01L2924/01047 , H01L2924/00013 , H01L2924/2076
摘要: 절연층(8)을개재하여방열부재(9)가접합되는전열판(4)과, 전열판(4)에대하여소정의간격을두고배치되고, 외측면에형성된전극패턴(32)의근방에개구부(3a)가마련된프린트기판(3)과, 전열판(4)과프린트기판(3)의사이에배치되고, 이면이전열판(4)에접합된전력용반도체소자(2)와, 전력용반도체소자(2)의표면에형성된주전력용전극(21C)의제 1 접합부에일단이접합되고, 타단이제 2 접합부(32p)에접합된배선부재(5)를구비하되, 주전력용전극(21C)으로부터프린트기판(3)을향해수직방향으로연장하는공간에제 2 접합부(32p)의적어도일부가들어가고, 또한개구부(3a)로부터수직방향으로연장하는공간에제 1 접합부가포함되도록구성했다.
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公开(公告)号:KR101106412B1
公开(公告)日:2012-01-17
申请号:KR1020057023529
申请日:2004-06-07
申请人: 엔엑스피 유에스에이, 인코포레이티드
发明人: 웬젤,로버트,제이. , 하퍼,피터,알.
IPC分类号: H01L21/60
CPC分类号: H01L24/06 , H01L23/49811 , H01L23/49816 , H01L23/49827 , H01L23/50 , H01L23/66 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6616 , H01L2224/0401 , H01L2224/04042 , H01L2224/05001 , H01L2224/05082 , H01L2224/05554 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/06136 , H01L2224/0616 , H01L2224/06163 , H01L2224/32145 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/4554 , H01L2224/4809 , H01L2224/48091 , H01L2224/48092 , H01L2224/48095 , H01L2224/4813 , H01L2224/48137 , H01L2224/48145 , H01L2224/48195 , H01L2224/48227 , H01L2224/48229 , H01L2224/48233 , H01L2224/48235 , H01L2224/4824 , H01L2224/48247 , H01L2224/48455 , H01L2224/48465 , H01L2224/48601 , H01L2224/48624 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48701 , H01L2224/48724 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/48801 , H01L2224/48824 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/4903 , H01L2224/49051 , H01L2224/49052 , H01L2224/49096 , H01L2224/49097 , H01L2224/4912 , H01L2224/4917 , H01L2224/49171 , H01L2224/49174 , H01L2224/49175 , H01L2224/49179 , H01L2224/49431 , H01L2224/854 , H01L2224/85401 , H01L2224/85424 , H01L2224/85444 , H01L2224/85447 , H01L2224/85455 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/01079 , H01L2924/014 , H01L2924/15153 , H01L2924/15165 , H01L2924/15311 , H01L2924/15313 , H01L2924/1532 , H01L2924/181 , H01L2924/19107 , H01L2924/30107 , H01L2924/3011 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/013 , H01L2924/00013
摘要: Closely-spaced bonding wires may be used in a variety of different packaging applications to achieve improved electrical performance. In one embodiment, two adjacent bonding wires within a wire grouping are closely-spaced if a separation distance D between the two adjacent wires is met for at least 50 percent of the length of the shorter of the two adjacent wires. In one embodiment, the separation distance D is at most two times a diameter of the wire having the larger diameter of the two adjacent wires. In another embodiment, the separation distance D is at most three times a wire-to-wire pitch between the two adjacent wires. Each wire grouping may include two of more closely-spaced wires. Wire groupings of closely-spaced bonding wires may be used to form, for example, power-signal-ground triplets, signal-ground pairs, signal-power pairs, or differential signal pairs or triplets.
摘要翻译: 紧密间隔的接合线可用于各种不同的包装应用中,以实现改进的电气性能。 在一个实施例中,如果两条相邻导线之间的间隔距离D达到两条相邻导线中较短的长度的至少50%,则导线组内的两个相邻接合线是紧密间隔的。 在一个实施例中,分离距离D为具有两个相邻线的较大直径的线的直径的至多两倍。 在另一个实施例中,分离距离D至少为两条相邻线之间的线对线间距的三倍。 每个线分组可以包括两个更紧密间隔的导线。 紧密间隔的接合线的电线组可以用于形成例如功率 - 信号 - 接地三联体,信号 - 接地对,信号 - 功率对或差分信号对或三元组。
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公开(公告)号:KR1020110033848A
公开(公告)日:2011-03-31
申请号:KR1020117002613
申请日:2009-07-08
申请人: 존슨 컨트롤스 테크놀러지 컴퍼니
发明人: 보리소프,콘스탄틴 , 토드,마이클,에스. , 아디가마노르,스리샤 , 야드릭,이반
CPC分类号: H01L23/34 , H01L23/473 , H01L23/50 , H01L25/072 , H01L2224/48227 , H01L2224/85424 , H01L2224/85439 , H01L2224/85444 , H01L2224/85447 , H01L2224/85469 , H01L2924/13034 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H05K1/0215 , H05K1/0306 , H05K1/162 , H05K3/0061 , H05K3/341 , H05K7/1432 , H05K2201/10166
摘要: 본 발명은 제1전도성 층, 제2전도성 층; 상기 제1전도성 층과 제2전도성 층 사이에 배치된 기면; 상기 제2전도성 층에 부착되고, 접지 하네스를 거쳐 접지에 연결되는 베이스를 포함하는 가변속 드라이브의 반도체 모듈을 위한 접지 시스템에 관한 것이다. 상기 제1전도성 층은 반도체 모듈과 기면에 전기적으로 연결되고, 상기 기면에 의해 제2전도성 층으로부터 전기적으로 격리된다. 상기 제2전도성 층은 기면에 전기적으로 연결되고 접지에 전기적으로 연결되는 베이스와 기면 사이에 배치된다. 상기 제1전도성 층, 기면 및 제2전도성 층은 반도체 모듈 내에 순환 전류를 줄이기 위해 상기 반도체 모듈과 베이스 사이 그리고 전기 컨덕터와 베이스 사이에 캐패시턴스 통로를 형성한다.
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公开(公告)号:KR1020110002112A
公开(公告)日:2011-01-06
申请号:KR1020107028251
申请日:2004-04-15
申请人: 덴카 주식회사
CPC分类号: H01L23/66 , H01L21/4857 , H01L23/142 , H01L23/3735 , H01L23/3736 , H01L23/49822 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/16 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/0566 , H01L2224/05666 , H01L2224/45111 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/4516 , H01L2224/45166 , H01L2224/48091 , H01L2224/48227 , H01L2224/48237 , H01L2224/48472 , H01L2224/48611 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48666 , H01L2224/48711 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48755 , H01L2224/48766 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/4886 , H01L2224/48866 , H01L2224/4911 , H01L2224/85411 , H01L2224/85424 , H01L2224/85439 , H01L2224/85455 , H01L2224/8546 , H01L2224/85466 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01061 , H01L2924/01063 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/13091 , H01L2924/14 , H01L2924/19043 , H01L2924/19051 , H01L2924/30105 , H05K1/0224 , H05K1/024 , H05K1/025 , H05K3/0061 , H05K2201/0187 , H05K2201/0209 , H05K2201/09745 , H01L2924/00014 , H01L2924/00 , H01L2224/48811 , H01L2224/48824 , H01L2224/48744 , H01L2224/4876 , H01L2224/4866
摘要: To provide a metal base circuit board excellent in heat dissipation properties, which remarkably reduces malfunction time of a semiconductor which occurs when a hybrid integrated circuit is operated at a high frequency. A metal base circuit board to be use for a hybrid integrated circuit, comprising circuits provided on a metal plate via an insulating layer (A, B), a power semiconductor mounted on the circuit and a control semiconductor to control the power semiconductor, provided on the circuit, wherein a low capacitance portion is embedded under a circuit portion (pad portion) on which the control semiconductor is mounted, preferably, the low capacitance portion is made of a resin containing an inorganic filler and has a dielectric constant of from 2 to 9.
摘要翻译: 本发明提供一种散热性优异的金属基电路基板,其能够大幅度地降低混合集成电路高频动作时的半导体误动作时间。 一种用于混合集成电路的金属基电路板,包括经由绝缘层(A,B)设置在金属板上的电路,安装在该电路上的功率半导体和控制该功率半导体的控制半导体,设置在 其中低电容部分嵌入其上安装有控制半导体的电路部分(焊盘部分)下方的电路,优选地,低电容部分由含有无机填料的树脂制成并具有介于2至10之间的介电常数 9。
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公开(公告)号:KR1020100134809A
公开(公告)日:2010-12-23
申请号:KR1020107028250
申请日:2004-04-15
申请人: 덴카 주식회사
CPC分类号: H01L23/66 , H01L21/4857 , H01L23/142 , H01L23/3735 , H01L23/3736 , H01L23/49822 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/16 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/0566 , H01L2224/05666 , H01L2224/45111 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/4516 , H01L2224/45166 , H01L2224/48091 , H01L2224/48227 , H01L2224/48237 , H01L2224/48472 , H01L2224/48611 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48666 , H01L2224/48711 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48755 , H01L2224/48766 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/4886 , H01L2224/48866 , H01L2224/4911 , H01L2224/85411 , H01L2224/85424 , H01L2224/85439 , H01L2224/85455 , H01L2224/8546 , H01L2224/85466 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01061 , H01L2924/01063 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/13091 , H01L2924/14 , H01L2924/19043 , H01L2924/19051 , H01L2924/30105 , H05K1/0224 , H05K1/024 , H05K1/025 , H05K3/0061 , H05K2201/0187 , H05K2201/0209 , H05K2201/09745 , H01L2924/00014 , H01L2924/00 , H01L2224/48811 , H01L2224/48824 , H01L2224/48744 , H01L2224/4876 , H01L2224/4866
摘要: To provide a metal base circuit board excellent in heat dissipation properties, which remarkably reduces malfunction time of a semiconductor which occurs when a hybrid integrated circuit is operated at a high frequency. A metal base circuit board to be use for a hybrid integrated circuit, comprising circuits provided on a metal plate via an insulating layer (A, B), a power semiconductor mounted on the circuit and a control semiconductor to control the power semiconductor, provided on the circuit, wherein a low capacitance portion is embedded under a circuit portion (pad portion) on which the control semiconductor is mounted, preferably, the low capacitance portion is made of a resin containing an inorganic filler and has a dielectric constant of from 2 to 9.
摘要翻译: 为了提供散热特性优异的金属基电路板,显着地减少混合集成电路以高频工作时发生的半导体的故障时间。 一种用于混合集成电路的金属基底电路板,包括经由绝缘层(A,B)设置在金属板上的电路,安装在电路上的功率半导体和控制半导体以控制功率半导体 电路,其中低电容部分嵌入在其上安装有控制半导体的电路部分(焊盘部分)的下方,优选地,低电容部分由含有无机填料的树脂制成,介电常数为2〜 9。
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公开(公告)号:KR1020060042920A
公开(公告)日:2006-05-15
申请号:KR1020050009153
申请日:2005-02-01
申请人: 파나소닉 주식회사
IPC分类号: H01L21/60
CPC分类号: H01L24/12 , H01L24/03 , H01L24/05 , H01L24/11 , H01L2224/03 , H01L2224/0401 , H01L2224/05093 , H01L2224/05557 , H01L2224/05624 , H01L2224/05644 , H01L2224/13019 , H01L2224/13099 , H01L2224/85424 , H01L2224/85444 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2224/45099
摘要: 반도체장치를, 반도체기판(1)의 표면에 내부회로에 접속한 전극 패드(2)가 형성되고, 전극 패드(2)의 주위에 전극 패드(2)에 근접해서 배선(6)이 형성되고, 전극 패드(2)의 둘레가장자리부와 배선(6)과 반도체기판(1) 표면을 덮는 보호막(4)이 형성되고, 전극 패드(2) 상에 금속돌기 전극(3)이 배선(6) 상의 보호막(4)에 둘레가장자리부가 놓여지도록 형성된 것으로 한다. 이것에 따르면, 배선(6)이 전극 패드(2)에 근접해서 형성되어 있기 때문에, 전극 패드(2)의 둘레가장자리부 및 그 주위영역을 덮는 보호막(4)은 비교적 평탄하게 형성되고, 금속돌기 전극(3)은, 상기 비교적 평탄한 보호막(4)에 놓여져 형성되는 볼록부(3a)에 평탄한 표면을 가지게 된다. 이 때문에, 전극 패드(2)가 작아도 금속돌기 전극(3)의 표면에 평탄한 영역을 충분히 확보할 수 있고, COG실장 등에서의 이방성 도전시트 등에 의해 접속 안정성을 확보할 수 있다.
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公开(公告)号:KR1020020009316A
公开(公告)日:2002-02-01
申请号:KR1020000043059
申请日:2000-07-26
发明人: 리시에완
IPC分类号: H01L23/528
CPC分类号: H01L21/6835 , H01L21/4832 , H01L23/3107 , H01L2224/45 , H01L2224/45144 , H01L2224/48 , H01L2224/48091 , H01L2224/4848 , H01L2224/48599 , H01L2224/48624 , H01L2224/85001 , H01L2224/85051 , H01L2224/85424 , H01L2924/01013 , H01L2924/01023 , H01L2924/01079 , H01L2924/01082 , H01L2924/181 , H01L2924/18165 , H01L2924/00014 , H01L2224/48465 , H01L2924/00 , H01L2924/00012
摘要: PURPOSE: A method for fabricating a thin type semiconductor package is provided to reduce a fabricating cost by forming the semiconductor package without using a particular kind of lead frame and simplify a fabrication process by performing a junction process once. CONSTITUTION: A die(23) is adhered to a substrate. A gold wire is formed between an aluminium pad and the die(23) formed on the substrate. A semiconductor chip, the gold wire and the substrate are molded by using a synthetic resin. The residues except for a circuit layout are removed from the substrate by performing an etch process for the substrate. The substrate is cut according to a desired size of semiconductor package.
摘要翻译: 目的:提供一种用于制造薄型半导体封装的方法,以通过在不使用特定类型的引线框的情况下形成半导体封装来降低制造成本,并且通过执行一次连接处理来简化制造工艺。 构成:将模具(23)粘附到基板上。 在铝垫和形成在基板上的模具(23)之间形成金线。 通过使用合成树脂来模制半导体芯片,金线和基板。 除了电路布局之外的残留物通过对衬底进行蚀刻工艺从衬底去除。 根据半导体封装的期望尺寸切割衬底。
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公开(公告)号:KR1020020005591A
公开(公告)日:2002-01-17
申请号:KR1020017010454
申请日:2000-02-17
申请人: 스카이워크스 솔루션즈 인코포레이티드
发明人: 하셰미,하싼,에스.
IPC分类号: H01L23/48
CPC分类号: H01L23/64 , H01L23/3677 , H01L24/45 , H01L24/48 , H01L2224/05599 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48235 , H01L2224/48237 , H01L2224/73265 , H01L2224/85424 , H01L2224/85444 , H01L2224/8547 , H01L2924/01079 , H01L2924/14 , H01L2924/30107 , H01L2924/00014 , H01L2924/00
摘要: 다이부착패드에부착되는집적회로칩을포함하는칩 캐리어(예컨대, RF 적용제품용칩/IC 스케일캐리어)의형태의반도체디바이스가제공된다. 그러한디바이스는상면과하면을구비하는상호접속기판을포함하는데, 상호접속기판의전체두께에걸쳐상면으로부터하면까지다수의비아가통과한다. 상호접속기판의상면상에는다이부착패드가배치되고, 상호접속기판의하면상에는히트스프레더가배치된다. 제1 군의비아는다이부착패드와히트스프레더모두와교차하도록위치된다. 제2 군의비아는다이부착패드와히트스프레더로부터떨어져위치된다. 상면은제2 군의비아와접하는다수의본드패드를구비하고, 하면은제2 군의비아와접하는다수의랜드를구비한다.
摘要翻译: 以芯片载体(例如,用于RF应用的芯片/ IC标尺载体)的形式提供半导体器件,其包括附接到管芯附接焊盘的集成电路芯片。 该器件具有具有上表面和下表面的互连衬底,多个通孔从上表面到下表面穿过互连衬底的厚度。 管芯附接垫位于互连基板的上表面上,散热器位于互连基板的下表面上。 第一组通孔定位成与管芯附接垫和散热器相交。 第二组通孔位于远离管芯附着垫和散热器的位置。 上表面具有与第二组通孔邻接的多个接合焊盘,并且下表面具有也邻接第二组通孔的多个焊盘。
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公开(公告)号:KR1019930009806B1
公开(公告)日:1993-10-11
申请号:KR1019900008665
申请日:1990-06-13
申请人: 가부시끼가이샤 도시바
发明人: 아라키도모카즈
IPC分类号: H01L29/41
CPC分类号: H01L24/06 , H01L2224/02166 , H01L2224/05554 , H01L2224/05624 , H01L2224/48247 , H01L2224/49171 , H01L2224/85424 , H01L2924/00014 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01023 , H01L2924/01033 , H01L2924/01082 , H01L2924/05042 , H01L2924/14 , H01L2224/45099 , H01L2924/00
摘要: 내용 없음.
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