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    Polysilane—polysilazane copolymers and methods for their preparation and use
    1.
    发明授权
    Polysilane—polysilazane copolymers and methods for their preparation and use 失效
    聚硅烷 - 聚硅氮烷共聚物及其制备和使用方法

    公开(公告)号：US08658284B2

    公开(公告)日：2014-02-25

    申请号：US13504579

    申请日：2010-10-25

    申请人： Wei Chen ,  Eric Scott Moyer ,  Binh Thanh Nguyen ,  Sheng Wang ,  Mark A. Wanous ,  Xiaobing Zhou

    发明人： Wei Chen ,  Eric Scott Moyer ,  Binh Thanh Nguyen ,  Sheng Wang ,  Mark A. Wanous ,  Xiaobing Zhou

    IPC分类号： B32B9/00 ,  B05D5/12 ,  C08G77/62

    CPC分类号： C08G77/62 ,  C09D183/16 ,  Y10T428/31663

    摘要： A polysilane-polysilazane copolymer contains a polysilane unit of formula (I), and a polysilazane unit of formula (II), where each R1 and each R2 are each independently selected from H, Si, and N atoms, R3 is selected from H, Si, or C atoms, a≧1, b≧1, and a quantity (a+b)≧2. The polysilane-polysilazane copolymer may be formulated in a composition with a solvent. The polysilane-polysilazane copolymer may be used in PMD and STI applications for trench filling, where the trenches have widths of 100 nm or less and aspect ratios of at least (6). The polysilane-polysilazane copolymer can be prepared by amination of a perchloro polysilane having (2) or more silicon atoms per molecule with a primary amine.

    摘要翻译： 聚硅烷 - 聚硅氮烷共聚物含有式（I）的聚硅烷单元和式（II）的聚硅氮烷单元，其中每个R 1和R 2各自独立地选自H，Si和N原子，R 3选自H， Si或C原子，a> = 1，b> = 1，数量（a + b）> = 2。 聚硅烷 - 聚硅氮烷共聚物可以配制成具有溶剂的组合物。 聚硅烷 - 聚硅氮烷共聚物可用于PMD和STI应用于沟槽填充，其中沟槽具有100nm或更小的宽度和至少（6）的纵横比。 聚硅烷 - 聚硅氮烷共聚物可以通过每分子具有（2）个或更多个硅原子的氨氯化聚酰胺与伯胺胺化制备。

    Silsesquioxane resins
    4.
    发明授权
    Silsesquioxane resins 失效
    倍半硅氧烷树脂

    公开(公告)号：US08304161B2

    公开(公告)日：2012-11-06

    申请号：US12919039

    申请日：2009-02-03

    申请人： Michael L. Bradford ,  Eric Scott Moyer ,  Sheng Wang ,  Craig Rollin Yeakle

    发明人： Michael L. Bradford ,  Eric Scott Moyer ,  Sheng Wang ,  Craig Rollin Yeakle

    IPC分类号： G03F7/00 ,  G03F7/075 ,  G03F7/40 ,  C08G77/00 ,  C08G77/12

    CPC分类号： C08G77/28 ,  C08G77/04 ,  C08G77/12 ,  C08G77/70 ,  C09D183/04 ,  C09D183/08 ,  G02B1/04 ,  G03F7/0752 ,  G03F7/091 ,  C08L83/08 ,  C08L83/04

    摘要： A silsesquioxane resin comprised of the units (Ph(CH2)rSiO(3-x)/2(OR′)x)m, (HSiO(3-x)/2(OR′)x)n′(MeSiO(3-x)/2(OR′)x)o′(RSiO(3-x)/2(OR′)x)p, (R1SiO(3-x)/2(OR′)x)q where Ph is a phenyl group, Me is a methyl group; R′ is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms; R is selected from an aryl sulfonate ester group; and R1 is selected from substituted phenyl groups, ester groups, polyether groups; mercapto groups, and reactive or curable organic functional groups; and r has a value of 0, 1, 2, 3, or 4; x has a value of 0, 1 or 2; wherein in the resin m has a value of 0 to 0.95; n has a value of 0.05 to 0.95; o has a value of 0.05 to 0.95; p has a value of 0.05 to 0.5; q has a value of 0 to 0.5; and m+n+o+p+q=1.

    摘要翻译： 由单元（Ph（CH 2）r SiO（3-x）/ 2（OR'）x）m，（HSiO（3-x）/ 2（OR'）x）n'（MeSiO x）/ 2（OR'）x）o'（RSiO（3-x）/ 2（OR'）x）p，（R1SiO（3-x）/ 2（OR'）x）q其中Ph是苯基 组，我是甲基; R'是氢原子或具有1至4个碳原子的烃基; R选自芳基磺酸酯基; 并且R 1选自取代的苯基，酯基，聚醚基团; 巯基和反应性或可固化的有机官能团; 并且r的值为0,1,2,3或4; x的值为0,1或2; 其中，所述树脂m的值为0〜0.95; n的值为0.05〜0.95; o的值为0.05〜0.95; p的值为0.05〜0.5; q的值为0〜0.5; m + n + o + p + q = 1。

    Polysilane - Polysilazane Copolymers And Methods For Their Preparation And Use
    5.
    发明申请
    Polysilane - Polysilazane Copolymers And Methods For Their Preparation And Use 失效
    聚硅烷 - 聚硅氮烷共聚物及其制备和使用方法

    公开(公告)号：US20120214006A1

    公开(公告)日：2012-08-23

    申请号：US13504579

    申请日：2010-10-25

    申请人： Wei Chen ,  Eric Scott Moyer ,  Binh Thanh Nguyen ,  Sheng Wang ,  Mark A. Wanous ,  Xiaobing Zhou

    发明人： Wei Chen ,  Eric Scott Moyer ,  Binh Thanh Nguyen ,  Sheng Wang ,  Mark A. Wanous ,  Xiaobing Zhou

    IPC分类号： C08G77/62 ,  B05D5/12 ,  B32B9/00 ,  C09D183/16

    CPC分类号： C08G77/62 ,  C09D183/16 ,  Y10T428/31663

    摘要： A polysilane−polysilazane copolymer contains a polysilane unit of formula (I), and a polysilazane unit of formula (II), where each R1 and each R2 are each independently selected from H, Si, and N atoms, R3 is selected from H, Si, or C atoms, a≧1, b≧1, and a quantity (a+b)≧2. The polysilane−polysilazane copolymer may be formulated in a composition with a solvent. The polysilane-polysilazane copolymer may be used in PMD and STI applications for trench filling, where the trenches have widths of 100 nm or less and aspect ratios of at least (6). The polysilane−polysilazane copolymer can be prepared by amination of a perchloro polysilane having (2) or more silicon atoms per molecule with a primary amine.

    摘要翻译： 聚硅烷 - 聚硅氮烷共聚物含有式（I）的聚硅烷单元和式（II）的聚硅氮烷单元，其中每个R 1和R 2各自独立地选自H，Si和N原子，R 3选自H， Si或C原子，a≥1，b≥1，数量（a + b）≥2。 聚硅烷 - 聚硅氮烷共聚物可以配制成具有溶剂的组合物。 聚硅烷 - 聚硅氮烷共聚物可用于PMD和STI应用于沟槽填充，其中沟槽具有100nm或更小的宽度和至少（6）的纵横比。 聚硅烷 - 聚硅氮烷共聚物可以通过每分子具有（2）个或更多个硅原子的氨氯化聚酰胺与伯胺胺化制备。

    SILSESQUIOXANE RESIN SYSTEMS WITH BASE ADDITIVES BEARING ELECTRON-ATTRACTING FUNCTIONALITIES
    6.
    发明申请
    SILSESQUIOXANE RESIN SYSTEMS WITH BASE ADDITIVES BEARING ELECTRON-ATTRACTING FUNCTIONALITIES 有权
    带有电子吸附功能的基础添加剂的SILSESQUIOXANE树脂体系

    公开(公告)号：US20090312467A1

    公开(公告)日：2009-12-17

    申请号：US12304263

    申请日：2007-06-27

    申请人： Sanlin Hu ,  Eric Scott Moyer

    发明人： Sanlin Hu ,  Eric Scott Moyer

    IPC分类号： C08K5/1545 ,  C08L83/04

    CPC分类号： C08K5/5435

    摘要： A silsesquioxane-based composition that contains (a) silsesquioxane resins that contain HSiO3/2 units and RSiO3/2 units wherein; R is an acid dissociable group, and (b) 7-diethylamino-4-methylcoumarin. The silsesquioxane-based compositions are useful as positive resist compositions in forming patterned features on substrate, particularly useful for multi-layer layer (i.e. bilayer) 193 nm & 157 nm photolithographic applications.

    摘要翻译： 含有（a）含有HSiO3 / 2单元和RSiO3 / 2单元的倍半硅氧烷树脂的倍半硅氧烷基组合物，其中： R是酸解离基团，和（b）7-二乙基氨基-4-甲基香豆素。 基于倍半硅氧烷的组合物可用作在衬底上形成图案特征的正性抗蚀剂组合物，特别适用于193nm和157nm多层（即双层）光刻应用。

    SILSESQUIOXANE RESIN SYSTEMS WITH BASE ADDITIVES BEARING ELECTRON-ATTRACTING FUNCTIONALITIES
    8.
    发明申请
    SILSESQUIOXANE RESIN SYSTEMS WITH BASE ADDITIVES BEARING ELECTRON-ATTRACTING FUNCTIONALITIES 有权
    带有电子吸附功能的基础添加剂的SILSESQUIOXANE树脂体系

    公开(公告)号：US20090202941A1

    公开(公告)日：2009-08-13

    申请号：US12304162

    申请日：2007-06-27

    申请人： Sanlin Hu ,  Eric Scott Moyer

    发明人： Sanlin Hu ,  Eric Scott Moyer

    IPC分类号： G03F7/075

    CPC分类号： C08L83/04 ,  C08G77/04 ,  C08G77/38 ,  C08K5/16 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/115

    摘要： Silsesquioxane-based compositions that contain (a) silsesquioxane resins that contain HSiO3/2 units and RSiO3/2 units wherein; R is an acid dissociable group, and (b) least one organic base additive selected from bulky tertiary amines, imides, amides and the polymeric amines wherein the organic base additive contains an electron-attracting group with the provision that the organic base additive is not 7-diethylamino-4-methylcoumarin. The silsesquioxane-based compositions are useful as positive resist compositions in forming patterned features on substrate, particularly useful for multi-layer layer (i.e. bilayer) 193 nm & 157 nm photolithographic applications.

    摘要翻译： 含有（a）含有HSiO3 / 2单元和RSiO3 / 2单元的倍半硅氧烷树脂的倍半硅氧烷基组合物，其中： R是酸解离基团，和（b）选自大体积叔胺，酰亚胺，酰胺和聚合胺的至少一种有机碱添加剂，其中有机碱添加剂含有吸电子基团，条件是有机碱添加剂不是 7-二乙基氨基-4-甲基香豆素。 基于倍半硅氧烷的组合物可用作在衬底上形成图案特征的正性抗蚀剂组合物，特别适用于193nm和157nm多层（即双层）光刻应用。

    Method of curing hydrogen silsesquioxane and densification in nano-scale trenches
    9.
    发明申请
    Method of curing hydrogen silsesquioxane and densification in nano-scale trenches 审中-公开
    固化氢倍半硅氧烷和纳米级沟槽致密化的方法

    公开(公告)号：US20090032901A1

    公开(公告)日：2009-02-05

    申请号：US11919109

    申请日：2006-06-12

    申请人： Wei Chen ,  Byung Keun Hwang ,  Jae-Kyun Lee ,  Eric Scott Moyer ,  Michael John Spaulding ,  Sheng Wang

    发明人： Wei Chen ,  Byung Keun Hwang ,  Jae-Kyun Lee ,  Eric Scott Moyer ,  Michael John Spaulding ,  Sheng Wang

    IPC分类号： H01L21/762 ,  H01L23/58

    CPC分类号： H01L21/3124 ,  H01L21/02134 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/316

    摘要： Trenches in a semiconductor substrate are filled by (i) dispensing a film forming material on the semiconductor substrate and into the trenches; (ii) curing the dispensed film forming material in the presence of an oxidant at a first low temperature for a first predetermined period of time; (iii) curing the dispensed film forming material in the presence of an oxidant at a second low temperature for a second predetermined period of time; (iv) curing the dispensed film forming material in the presence of an oxidant at a third high temperature for a third predetermined period of time; and (v) forming filled oxide trenches in the semiconductor substrate. The film forming material is hydrogen silsesquioxane.

    摘要翻译： 通过（i）在半导体衬底上分配成膜材料并进入沟槽来填充半导体衬底中的沟槽; （ii）在第一低温下在氧化剂存在下固化所分配的成膜材料持续第一预定时间段; （iii）在第二低温下在氧化剂存在下固化所分配的成膜材料持续第二预定时间段; （iv）在第三高温下在氧化剂存在下固化分配的成膜材料持续第三预定时间; 和（v）在半导体衬底中形成填充的氧化物沟槽。 成膜材料是氢倍半硅氧烷。

    Method for Forming Anti-Reflective Coating
    10.
    发明申请
    Method for Forming Anti-Reflective Coating 失效
    形成防反射涂层的方法

    公开(公告)号：US20080273561A1

    公开(公告)日：2008-11-06

    申请号：US11666813

    申请日：2005-02-22

    申请人： Peng-Fei Fu ,  Eric Scott Moyer ,  Craig Rollin Yeakle

    发明人： Peng-Fei Fu ,  Eric Scott Moyer ,  Craig Rollin Yeakle

    IPC分类号： H01S3/04

    CPC分类号： H01S5/02415 ,  C09D183/04 ,  G03F7/0757 ,  G03F7/091 ,  H01S5/0612

    摘要： A system and method of minimizing the amount of power that is used by an optoelectronic module is disclosed. The system uses a thermoelectric cooler (TEC) to maintain a case temperature of the module at about 50° C. This allows the TEC to operate in the much more efficient heating mode, thus minimizing the amount of current being used to maintain the module temperature. The method includes the steps of determining a temperature range and operating temperature for an optoelectronic module, such that a maximum current level is not exceeded. In one exemplary embodiment, an operating temperature of about 50° C. with a temperature range of from about −5° C. to about 75° C. allows a maximum current of about 300 mA.

    摘要翻译： 公开了一种使由光电子模块使用的功率最小化的系统和方法。 该系统使用热电冷却器（TEC）将模块的外壳温度保持在约50°C。这允许TEC以更有效的加热模式运行，从而最小化用于维持模块温度的电流量 。 该方法包括确定光电子模块的温度范围和工作温度的步骤，使得不超过最大电流水平。 在一个示例性实施例中，温度范围为约-5℃至约75℃的约50℃的操作温度允许约300mA的最大电流。