公开(公告)号：US20220157574A1

公开(公告)日：2022-05-19

申请号：US17455197

申请日：2021-11-16

Applicant: Applied Materials, Inc.

Inventor： Benjamin SCHWARZ ,  Michael D. WILLWERTH ,  Aditi MITHUN ,  Prabhat KUMAR ,  Grace MATHEW ,  Andreas SCHMID

IPC: H01J37/32

Abstract: Embodiments of the present disclosure provide a method and an apparatus for processing a substrate. The apparatus has a ring assembly. The ring assembly has an edge ring and a shadow ring. The edge ring has a ring shaped body. The edge ring body has a top surface and a bottom surface. Pin holes extend through the edge ring body from the top surface to the bottom surface. The shadow ring has a ring shaped body. The shadow ring body has an upper surface and a lower surface. Sockets are formed on the lower surface, wherein the sockets in the shadow ring body align with the pin holes in the edge ring body.

公开(公告)号：US20170032997A1

公开(公告)日：2017-02-02

申请号：US15135496

申请日：2016-04-21

Applicant: Applied Materials, Inc.

Inventor： Michael D. WILLWERTH ,  Roberto Cesar COTLEAR

IPC: H01L21/687 ,  H01L21/67 ,  H01L21/683 ,  B66F3/24

CPC classification number: H01L21/68742 ,  B66F3/25 ,  H01L21/6831

Abstract: Implementations described herein provide a lift pin actuator. The lift pin actuator has a housing. The housing has an interior volume. A track is disposed in the interior volume and coupled to the housing. A center shaft is at least partially disposed in the interior volume of the housing. A guide is movably coupled to the track. At least one internal bellows is disposed in the interior volume, the internal bellows form a seal between the center shaft and the housing. An elastic member is disposed in the interior volume and configured to apply a force that retracts the center shaft into the housing. An inlet port is configured to introduce fluid into the interior volume between the internal bellows and the housing. The fluid generates a force opposing the elastic member to extend the center shaft relative to the housing.

Abstract translation: 本文所述的实施例提供了提升销致动器。 升降销致动器具有壳体。 外壳具有内部容积。 轨道设置在内部体积中并且联接到壳体。 中心轴至少部分地设置在壳体的内部空间中。 引导件可移动地联接到轨道。 至少一个内部波纹管设置在内部空间中，内部波纹管在中心轴和壳体之间形成密封。 弹性构件设置在内部容积中并且构造成施加将中心轴缩回到壳体中的力。 入口端口构造成将流体引入内部波纹管和壳体之间的内部空间。 流体产生与弹性构件相对的力，以相对于壳体延伸中心轴。

公开(公告)号：US20200335368A1

公开(公告)日：2020-10-22

申请号：US16391262

申请日：2019-04-22

Applicant: Applied Materials, Inc.

Inventor： Yaoling PAN ,  Patrick John TAE ,  Michael D. WILLWERTH ,  Leonard M. TEDESCHI ,  Daniel Sang BYUN ,  Philip Allan KRAUS ,  Phillip A. CRIMINALE ,  Changhun LEE ,  Rajinder DHINDSA ,  Andreas SCHMID ,  Denis M. KOOSAU

IPC: H01L21/67 ,  H01J37/32 ,  H03K17/955 ,  H01L21/66

Abstract: The present disclosure generally relates to a method and apparatus for determining a metric related to erosion of a ring assembly used in an etching within a plasma processing chamber. In one example, the apparatus is configured to obtain a metric indicative of erosion on an edge ring disposed on a substrate support assembly in a plasma processing chamber. A sensor obtains the metric for the edge ring. The metric correlates to the quantity of erosion in the edge ring. In another example, the ring sensor may be arranged outside of a periphery of a substrate support assembly. The metric may be acquired by the ring sensor through a plasma screen.

公开(公告)号：US20140367046A1

公开(公告)日：2014-12-18

申请号：US14293516

申请日：2014-06-02

Applicant: Applied Materials, Inc.

Inventor： Valentin N. TODOROW ,  Gary LERAY ,  Michael D. WILLWERTH ,  Li-Sheng CHIANG

IPC: H01J37/32 ,  H01L21/67 ,  H05H1/46 ,  H01L21/02

CPC classification number: H01J37/32082 ,  H01J37/321 ,  H01J37/32532 ,  H05H1/46 ,  H05H2001/4645 ,  H05H2001/4667

Abstract: Embodiments of an apparatus having an improved coil antenna assembly that can provide enhanced plasma in a processing chamber is provided. The improved coil antenna assembly enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, an electrode assembly configured to use in a semiconductor processing apparatus includes a RF conductive connector, and a conductive member having a first end electrically connected to the RF conductive connector, wherein the conductive member extends outward and vertically from the RF conductive connector.

Abstract translation: 提供了具有可在处理室中提供增强的等离子体的改进的线圈天线组件的设备的实施例。 改进的线圈天线组件增强等离子体处理室内的等离子体位置的位置控制，并且可用于蚀刻，沉积，植入和热处理系统以及其它需要等离子体位置控制的应用中。 在一个实施例中，配置成在半导体处理装置中使用的电极组件包括RF导电连接器和具有电连接到RF导电连接器的第一端的导电构件，其中导电构件从RF导电连接器向外和垂直地延伸 。

公开(公告)号：US20220262600A1

公开(公告)日：2022-08-18

申请号：US17175216

申请日：2021-02-12

Applicant: Applied Materials, Inc.

Inventor： Ming XU ,  Ashley Mutsuo OKADA ,  Michael D. WILLWERTH ,  Duc Dang BUCKIUS ,  Jeffrey LUDWIG ,  Aditi MITHUN ,  Benjamin SCHWARZ

IPC: H01J37/32 ,  H01L21/3065

Abstract: A gas distribution apparatus is provided having a first reservoir with a first upstream end and a first downstream end and a second reservoir with a second upstream end and a second downstream end. A reservoir switch valve is in fluid communication with the first downstream end of the first reservoir and the second downstream end of the second reservoir. The reservoir switch valve operable to selectively couple the first reservoir to an outlet of the reservoir switch valve when in a first state, and couple the second reservoir to the outlet of the reservoir switch valve when in a second state. A plurality of proportional flow control valves are provided having inlets coupled in parallel to the outlet of the reservoir switch valve The plurality of proportional flow control valves have outlets configured to provide gas to a processing chamber.

公开(公告)号：US20160099162A1

公开(公告)日：2016-04-07

申请号：US14765872

申请日：2014-04-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Siu Tang NG ,  Changhun LEE ,  Huutri DAO ,  Adam LANE ,  Michael D. WILLWERTH

IPC: H01L21/683 ,  H01J37/32

Abstract: Embodiments of the invention provide a single ring comprising a circular ring-shaped body with an inner surface, closest in proximity to a centerline of the body, and an outer surface opposite the inner surface. The body has a bottom surface with a slot formed therein and a top surface with an outer end, adjacent to the outer surface, and an inner end adjacent to a slope extending, towards the centerline, down to a step on the inner surface. The body has a lip, disposed on the inner surface extending out from a vertical face below the step toward the centerline of the body, and is configured to support a substrate thereon. The body is sized such that a gap of less than about 2 mm is formed on the lip between the substrate and the vertical face of the step.

Abstract translation: 本发明的实施例提供一种单环，其包括具有内表面的圆形环形体，其最接近身体的中心线，以及与内表面相对的外表面。 主体具有形成在其中的槽的底表面和具有与外表面相邻的外端的顶表面，以及与朝向中心线向下延伸到内表面上的台阶的斜面相邻的斜面的内端。 本体具有唇部，其设置在从台阶下方的垂直面朝向身体的中心线延伸的内表面上，并且构造成在其上支撑基底。 本体的尺寸使得在基板和台阶的垂直面之间的唇缘上形成小于约2mm的间隙。

公开(公告)号：US20140272211A1

公开(公告)日：2014-09-18

申请号：US14200077

申请日：2014-03-07

Applicant: Applied Materials, Inc.

Inventor： Andrew NGUYEN ,  Bradley HOWARD ,  Shahid RAUF ,  Ajit BALAKRISHNA ,  Tom K. CHO ,  Kenneth S. COLLINS ,  Anand KUMAR ,  Michael D. WILLWERTH ,  Yogananda S. VISHWANATH

IPC: H01J37/32 ,  B01D45/08

CPC classification number: H01J37/32495 ,  B01D45/08 ,  B29C66/71 ,  B32B1/02 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/32871 ,  Y10T428/13

Abstract: Embodiments of the present disclosure generally provide various apparatus and methods for reducing particles in a semiconductor processing chamber. One embodiment of present disclosure provides a vacuum screen assembly disposed over a vacuum port to prevent particles generated by the vacuum pump from entering substrate processing regions. Another embodiment of the present disclosure provides a perforated chamber liner around a processing region of the substrate. Another embodiment of the present disclosure provides a gas distributing chamber liner for distributing a cleaning gas around the substrate support under the substrate supporting surface.

Abstract translation: 本公开的实施例通常提供用于减少半导体处理室中的颗粒的各种装置和方法。 本公开的一个实施例提供一种设置在真空端口上的真空屏幕组件，以防止由真空泵产生的颗粒进入衬底处理区域。 本公开的另一个实施例提供围绕衬底的处理区域的穿孔室衬里。 本公开的另一个实施例提供一种气体分配室衬套，用于在衬底支撑表面下方的衬底支撑件周围分配清洁气体。

公开(公告)号：US20170221750A1

公开(公告)日：2017-08-03

申请号：US15418656

申请日：2017-01-27

Applicant: Applied Materials, Inc.

Inventor： Roberto Cesar COTLEAR ,  Michael D. WILLWERTH

IPC: H01L21/687 ,  H01J37/32 ,  H01L21/683

CPC classification number: H01L21/68742 ,  H01J37/3211 ,  H01J37/32183 ,  H01J37/32715 ,  H01L21/6831

Abstract: Embodiments of the present disclosure generally relate to a lift pin assembly used for de-chucking substrates. The lift pin assembly includes a base and one or more lift pin holders. Each lift pin holder includes a first portion and a second portion. The first portion is coupled to the base by a metal connector and the second portion is coupled to the first portion by a metal connector. A resistor is disposed in the first portion of the lift pin holder. The second portion includes a lift pin support for supporting a lift pin. The lift pin, the lift pin support, and the metal connectors are electrically conductive. The base is connected to a reference voltage, such as the ground, forming a path for the residual electrostatic charge in the substrate from the substrate to the reference voltage.

公开(公告)号：US20170011891A1

公开(公告)日：2017-01-12

申请号：US15276423

申请日：2016-09-26

Applicant: Applied Materials, Inc.

Inventor： Edward P. HAMMOND, IV ,  Jing ZOU ,  Rodolfo P. BELEN ,  Meihua SHEN ,  Nicolas GANI ,  Andrew NGUYEN ,  David PALAGASHVILI ,  Michael D. WILLWERTH

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01J37/32642 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32623 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/68735

Abstract: A method and apparatus are provided for plasma etching a substrate in a processing chamber. A focus ring assembly circumscribes a substrate support, providing uniform processing conditions near the edge of the substrate. The focus ring assembly comprises two rings, a first ring and a second ring, the first ring comprising quartz, and the second ring comprising monocrystalline silicon, silicon carbide, silicon nitride, silicon oxycarbide, silicon oxynitride, or combinations thereof. The second ring is disposed above the first ring near the edge of the substrate, and creates a uniform electric field and gas composition above the edge of the substrate that results in uniform etching across the substrate surface.

Abstract translation: 提供了一种用于等离子体蚀刻处理室中的衬底的方法和装置。 聚焦环组件围绕衬底支撑件，在衬底的边缘附近提供均匀的加工条件。 聚焦环组件包括两个环，第一环和第二环，第一环包括石英，第二环包括单晶硅，碳化硅，氮化硅，碳氧化硅，氮氧化硅或其组合。 第二环设置在基板边缘附近的第一环上方，并且在衬底的边缘上方产生均匀的电场和气体组成，导致穿过衬底表面的均匀蚀刻。

公开(公告)号：US20160254123A1

公开(公告)日：2016-09-01

申请号：US15149923

申请日：2016-05-09

Applicant: Applied Materials, Inc.

Inventor： Michael D. WILLWERTH ,  David PALAGASHVILI ,  Valentin N. TODOROW ,  Stephen YUEN

IPC: H01J37/32 ,  C23C14/22 ,  C23C16/44 ,  H01F21/12 ,  H05B6/02

CPC classification number: H01J37/321 ,  C23C14/22 ,  C23C16/44 ,  H01F21/12 ,  H01J37/32321 ,  H01J37/32522 ,  H01J37/32623 ,  H01J37/32935 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/67017 ,  H01L21/67069 ,  H05B6/02 ,  H05B6/108

Abstract: A shielded lid heater lid heater suitable for use with a plasma processing chamber, a plasma processing chamber having a shielded lid heater and a method for plasma processing are provided. The method and apparatus enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, a process for tuning a plasma processing chamber is provided that include determining a position of a plasma within the processing chamber, selecting an inductance and/or position of an inductor coil coupled to a lid heater that shifts the plasma location from the determined position to a target position, and plasma processing a substrate with the inductor coil having the selected inductance and/or position.

Abstract translation: 提供适用于等离子体处理室的屏蔽盖加热器盖加热器，具有屏蔽盖加热器的等离子体处理室和等离子体处理方法。 该方法和装置增强等离子体处理室内的等离子体位置的位置控制，并且可用于蚀刻，沉积，植入和热处理系统以及其它需要等离子体位置控制的应用中。 在一个实施例中，提供了一种用于调谐等离子体处理室的过程，其包括确定处理室内的等离子体的位置，选择耦合到盖式加热器的电感线圈的电感和/或位置，其将等离子体位置从 确定位置到目标位置，以及等离子体处理具有所选择的电感和/或位置的电感线圈的衬底。