公开(公告)号：US11313034B2

公开(公告)日：2022-04-26

申请号：US15814497

申请日：2017-11-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Weimin Zeng ,  Yong Cao ,  Daniel Lee Diehl ,  Huixiong Dai ,  Khoi Phan ,  Christopher Ngai ,  Rongjun Wang ,  Xianmin Tang

IPC: C23C14/35 ,  H01J37/34 ,  C23C14/06 ,  C23C14/00 ,  C23C14/34 ,  C23C14/14 ,  C23C14/22 ,  C23C14/54 ,  C23C14/04

Abstract: In some embodiments, a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) forming a plasma from a process gas within a processing region of the physical vapor deposition chamber, wherein the process gas comprises an inert gas and a hydrogen-containing gas to sputter silicon from a surface of a target within the processing region of the physical vapor deposition chamber; and (b) depositing an amorphous silicon layer atop a first layer on the substrate, wherein adjusting the flow rate of the hydrogen containing gas tunes the optical properties of the deposited amorphous silicon layer.

公开(公告)号：US10991579B2

公开(公告)日：2021-04-27

申请号：US16400850

申请日：2019-05-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Weimin Zeng ,  Yong Cao

IPC: H01L21/02

Abstract: The present disclosure generally relates to tin oxide films prepared by physical vapor deposition using a doped tin target. The semiconductor film may include tin and oxygen, and may be formed in a PVD chamber including a silicon doped tin target. Additionally, the semiconductor film may be smooth compared to similarly formed films without a doped target. The semiconductor film may be deposited by applying an electrical bias to a sputtering silicon doped tin target including the silicon in an amount of 0.5 to 5% by atomic weight of the total target. The semiconductor film has a smooth surface morphology compared to similarly formed tin oxide films formed without a doped target.

公开(公告)号：US09478421B2

公开(公告)日：2016-10-25

申请号：US14878514

申请日：2015-10-08

Applicant: Applied Materials, Inc.

Inventor： Christopher Dennis Bencher ,  Daniel Lee Diehl ,  Huixiong Dai ,  Yong Cao ,  Tingjun Xu ,  Weimin Zeng ,  Peng Xie

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/311 ,  C23C14/00 ,  C23C14/06 ,  C23C14/14 ,  C23C14/35 ,  H01L21/308

CPC classification number: H01L21/0337 ,  C23C14/0042 ,  C23C14/06 ,  C23C14/14 ,  C23C14/351 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02266 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31138 ,  H01L21/31144

Abstract: The embodiments herein provides methods for forming a PVD silicon oxide or silicon rich oxide, or PVD SiN or silicon rich SiN, or SiC or silicon rich SiC, or combination of the preceding including a variation which includes controlled doping of hydrogen into the compounds heretofore referred to as SiOxNyCz:Hw, where w, x, y, and z can vary in concentration from 0% to 100%, is produced as a hardmask with optical properties that are substantially matched to the photo-resists at the exposure wavelength. Thus making the hardmask optically planarized with respect to the photo-resist. This allows for multiple sequences of litho and etches in the hardmask while the photo-resist maintains essentially no optical topography or reflectivity variations.

公开(公告)号：US10886155B2

公开(公告)日：2021-01-05

申请号：US16249653

申请日：2019-01-16

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Zihao Yang ,  Nag B. Patibandla ,  Daniel Lee Diehl ,  Yong Cao ,  Weimin Zeng ,  Renjing Zheng ,  Edward Budiarto ,  Surender Kumar Gurusamy ,  Todd Egan ,  Niranjan R. Khasgiwale

IPC: H01L21/67 ,  H01L21/687 ,  G01N21/21

Abstract: A method and apparatus for forming an optical stack having uniform and accurate layers is provided. A processing tool used to form the optical stack comprises, within an enclosed environment, a first transfer chamber, an on-board metrology unit, and a second transfer chamber. A first plurality of processing chambers is coupled to the first transfer chamber or the second transfer chamber. The on-board metrology unit is disposed between the first transfer chamber and the second transfer chamber. The on-board metrology unit is configured to measure one or more optical properties of the individual layers of the optical stack without exposing the layers to an ambient environment.

公开(公告)号：US10886113B2

公开(公告)日：2021-01-05

申请号：US15818169

申请日：2017-11-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Thanh X. Nguyen ,  Weimin Zeng ,  Yong Cao

IPC: C23C14/36 ,  H01J37/34 ,  H01J37/32 ,  H01L21/02

Abstract: Embodiments of process kits for process chambers and methods for processing a substrate are provided herein. In some embodiments, a process kit includes a non-conductive upper shield having an upper portion to surround a sputtering target and a lower portion extending downward from the upper portion; and a conductive lower shield disposed radially outward of the non-conductive upper shield and having a cylindrical body with an upper portion and a lower portion, a lower wall projecting radially inward from the lower portion, and a lip protruding upward from the lower wall. The cylindrical body is spaced apart from the non-conductive upper shield by a first gap. The lower wall is spaced apart from the lower portion of the non-conductive upper shield by a second gap to limit a direct line of sight between a volume within the non-conductive upper shield and the cylindrical body of the conductive lower shield.

公开(公告)号：US09177796B2

公开(公告)日：2015-11-03

申请号：US14269010

申请日：2014-05-02

Applicant: Applied Materials, Inc.

Inventor： Christopher Dennis Bencher ,  Daniel Lee Diehl ,  Huixiong Dai ,  Yong Cao ,  Tingjun Xu ,  Weimin Zeng ,  Peng Xie

IPC: H01L21/311 ,  H01L21/033 ,  H01L21/02 ,  H01L21/027 ,  H01L21/3105 ,  C23C14/00 ,  C23C14/06

CPC classification number: H01L21/0337 ,  C23C14/0042 ,  C23C14/06 ,  C23C14/14 ,  C23C14/351 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02266 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31138 ,  H01L21/31144

Abstract: The embodiments herein provides methods for forming a PVD silicon oxide or silicon rich oxide, or PVD SiN or silicon rich SiN, or SiC or silicon rich SiC, or combination of the preceding including a variation which includes controlled doping of hydrogen into the compounds heretofore referred to as SiOxNyCz:Hw, where w, x, y, and z can vary in concentration from 0% to 100%, is produced as a hardmask with optical properties that are substantially matched to the photo-resists at the exposure wavelength. Thus making the hardmask optically planarized with respect to the photo-resist. This allows for multiple sequences of litho and etches in the hardmask while the photo-resist maintains essentially no optical topography or reflectivity variations.

Abstract translation: 本文的实施方案提供了用于形成PVD氧化硅或富硅氧化物或PVD SiN或富硅SiN或富SiC或富硅SiC的方法或前述组合，包括将氢控制掺入到迄今为止参考的化合物 作为SiO x N y C z：H w，其中w，x，y和z可以在0％至100％的浓度范围内变化，作为具有与曝光波长下的光致抗蚀剂基本匹配的光学性质的硬掩模。 因此使相对于光致抗蚀剂光学平坦化的硬掩模。 这允许在硬掩模中的多个序列的光刻和蚀刻，而光致抗蚀剂基本上保持没有光学形貌或反射率变化。

公开(公告)号：US20190212656A1

公开(公告)日：2019-07-11

申请号：US16244381

申请日：2019-01-10

Applicant: Applied Materials, Inc. ,  International Business Machines Corporation

Inventor： Huixiong Dai ,  Weimin Zeng ,  Daniel Lee Diehl ,  Yong Cao ,  Hsiang Ning Wu ,  Khoi Phan ,  Christopher S. Ngai ,  Mingwei Zhu ,  Michael Stolfi ,  Nelson M. Felix ,  Ekmini Anuja DeSilva ,  Xianmin Tang

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70058 ,  G03F7/0035 ,  G03F7/2022 ,  G03F7/70033

Abstract: Methods for depositing an EUV hardmask film on a substrate by physical vapor deposition which allow for reduced EUV dose. Certain embodiments relate to metal oxide hardmasks which require smaller amounts of EUV energy for processing and allow for higher throughput. A silicon or metal target can be sputtered onto a substrate in the presence of an oxygen and or doping gas containing plasma.

公开(公告)号：US20180135183A1

公开(公告)日：2018-05-17

申请号：US15806500

申请日：2017-11-08

Applicant: Applied Materials, Inc.

Inventor： Weimin Zeng ,  Yong Cao ,  Daniel Lee Diehl ,  Khoi Phan ,  Huixiong Dai ,  Christopher S. Ngai

IPC: C23C16/56 ,  C23C16/455 ,  G03F1/22

CPC classification number: C23C16/56 ,  C23C14/06 ,  C23C14/5826 ,  C23C14/5846 ,  C23C16/0272 ,  C23C16/455 ,  G03F1/22

Abstract: Processing methods comprising depositing an initial hardmask film on a substrate by physical vapor deposition and exposing the initial hardmask film to a treatment plasma comprising a silane compound to form the hardmask.

公开(公告)号：US09773665B1

公开(公告)日：2017-09-26

申请号：US15371142

申请日：2016-12-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Weimin Zeng ,  Thanh X. Nguyen ,  Yong Cao

IPC: H01L21/02 ,  C23C14/22 ,  C23C14/06

CPC classification number: C23C14/22 ,  C23C14/0036 ,  C23C14/024 ,  C23C14/0652 ,  C23C14/185 ,  C23C14/35 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32853 ,  H01L21/02631

Abstract: Methods and apparatus for reducing particles generated in a process carried out in a process chamber are provided herein. In some embodiments, a process kit shield includes: a body having a surface facing a processing volume of a physical vapor deposition (PVD) process chamber, wherein the body is composed of aluminum oxide (Al2O3), and a silicon nitride layer on the surface of the body.

公开(公告)号：US09633839B2

公开(公告)日：2017-04-25

申请号：US14744688

申请日：2015-06-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Weimin Zeng ,  Thanh X. Nguyen ,  Yana Cheng ,  Yong Cao ,  Daniel Lee Diehl ,  Srinivas Guggilla ,  Rongjun Wang ,  Xianmin Tang

IPC: H01L21/02

CPC classification number: H01L21/0234 ,  H01L21/0214 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02266

Abstract: In some embodiments a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) depositing a dielectric layer to a first thickness atop a first surface of the substrate via a physical vapor deposition process; (b) providing a first plasma forming gas to a processing region of the physical vapor deposition process chamber, wherein the first plasma forming gas comprises hydrogen but not carbon; (c) providing a first amount of bias power to a substrate support to form a first plasma from the first plasma forming gas within the processing region of the physical vapor deposition process chamber; (d) exposing the dielectric layer to the first plasma; and (e) repeating (a)-(d) to deposit the dielectric film to a final thickness.