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公开(公告)号：US5622566A
公开(公告)日：1997-04-22
申请号：US424473
申请日：1995-05-10
IPC分类号： C23C16/455 , H01L21/205 , H01L21/00
CPC分类号： C23C16/45561 , C23C16/455 , H01L21/02422 , H01L21/02532 , H01L21/02576 , H01L21/0262
摘要： A film-forming apparatus for forming an impurity-doped film on an object such as a semiconductor wafer has an elongated reaction tube located such that its longitudinal direction is identical to the vertical direction, and having an object arrangement region in which a plurality of objects or semiconductor wafers to be processed can be arranged at intervals in the vertical direction. A film-forming gas is introduced into the reaction tube through a film-forming gas introduction pipe. This apparatus also has a main dopant gas introduction pipe, having a gas outlet located below the object arrangement region in the reaction tube, for introducing a dopant gas into the reaction tube and guiding the same upward, at least one sub dopant gas introduction pipe, having a gas outlet located above the object arrangement region in the reaction tube, for introducing the same dopant gas as the first-mentioned one into the reaction tube so as to compensate for insufficient supply of the dopant gas through the main dopant gas introduction pipe, an exhaustion system for exhausting the gases in the reaction tube, and a heating unit for heating the interior of the reaction tube.
摘要翻译： PCT No.PCT / JP94 / 01526 Sec。 371日期：1995年5月10日 102（e）日期1995年5月10日PCT 1994年9月16日PCT PCT。 出版物WO95 / 08185 日期1995年3月23日在半导体晶片等物体上形成杂质掺杂膜的成膜装置具有伸长的反应管，其长度方向与上下方向一致， 可以在垂直方向上间隔布置要处理的多个物体或半导体晶片。 成膜气体通过成膜气体引入管被引入到反应管中。 该装置还具有主要的掺杂剂气体引入管，其具有位于反应管中的物体排列区域下方的气体出口，用于将掺杂剂气体引入反应管并引导相同的向上的至少一个子掺杂剂气体导入管， 具有位于反应管中的物体排列区域上方的气体出口，用于将与前述相同的掺杂气体引入反应管中，以补偿通过主要掺杂剂气体导入管的掺杂剂气体供应不足， 用于排出反应管中的气体的耗尽系统和用于加热反应管内部的加热单元。
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公开(公告)号：US09777379B2
公开(公告)日：2017-10-03
申请号：US14129698
申请日：2012-06-04
CPC分类号： C23C18/163 , C23C18/1619 , C23C18/1632 , C23C18/1655 , C23C18/1669 , C23C18/1675 , C23C18/1676 , C23C18/168 , C23C18/18 , C23C18/50 , H05K3/187 , H05K2203/0165 , H05K2203/072 , H05K2203/075
摘要： A plating apparatus can perform a plating process on an entire surface of a substrate uniformly. A plating apparatus 20 includes a substrate holding/rotating device 110 configured to hold and rotate a substrate 2; a discharging device 21 configured to discharge a plating liquid toward the substrate 2 held on the substrate holding/rotating device 110; and a controller 160 configured to control the substrate holding/rotating device 110 and the discharging device 21. Further, the discharging device 21 includes a first nozzle 40 having a multiple number of discharge openings 41 arranged in a radial direction of the substrate 2 or having a discharge opening 42 extended in the radial direction of the substrate 2; and a second nozzle 45 having a discharge opening 46 configured to be positioned closer to a central portion of the substrate 2 than the discharge opening of the first nozzle 40.
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公开(公告)号：US08937014B2
公开(公告)日：2015-01-20
申请号：US13879175
申请日：2011-08-31
申请人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita
发明人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita
IPC分类号： H01L21/44 , H01L21/67 , C23C18/16 , H01L21/288
CPC分类号： H01L21/6723 , C23C18/1619 , C23C18/1653 , C23C18/1675 , C23C18/1676 , C23C18/168 , C23C18/50 , H01L21/288
摘要： A liquid treatment apparatus of continuously performing a plating process on multiple substrates includes a temperature controlling container for accommodating a plating liquid; a temperature controller for controlling a temperature of the plating liquid in the temperature controlling container; a holding unit for holding the substrates one by one at a preset position; a nozzle having a supply hole through which the temperature-controlled plating liquid in the temperature controlling container is discharged to a processing surface of the substrate; a pushing unit for pushing the temperature-controlled plating liquid in the temperature controlling container toward the supply hole of the nozzle; and a supply control unit for controlling a timing when the plating liquid is pushed by the pushing unit. The temperature controller controls the temperature of the plating liquid in the temperature controlling container based on the timing when the plating liquid is pushed by the pushing unit.
摘要翻译： 在多个基板上连续进行电镀处理的液体处理装置包括：容纳电镀液的温度控制容器; 温度控制器，用于控制温度控制容器中的电镀液的温度; 保持单元，用于将预定位置一个接一个地保持; 具有供给孔的喷嘴，所述温度控制容器中的所述温度控制电镀液通过所述供给孔排出到所述基板的处理面; 推压单元，用于将温度控制容器中的温度控制电镀液朝向喷嘴的供给孔推动; 以及供应控制单元，用于控制当推动单元推动电镀液体时的定时。 温度控制器基于由推动单元推动电镀液的时机，控制温度控制容器中的电镀液的温度。
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公开(公告)号：US20140120264A1
公开(公告)日：2014-05-01
申请号：US14128109
申请日：2012-06-07
IPC分类号： B05C11/10
CPC分类号： B05C11/1039 , C23C18/1619 , C23C18/1632 , C23C18/165 , C23C18/168 , C23C18/1682 , C23C18/1683 , C23C18/32
摘要： A plating apparatus 20 has a substrate holding/rotating device 110 configured to hold and rotate a substrate 2 and a plating liquid supplying device 30 configured to supply a plating liquid 35 onto the substrate 2. The plating liquid supplying device 30 has a supply tank 31 configured to store therein the plating liquid 35 to be supplied onto the substrate 2, a discharge nozzle 32 configured to discharge the plating liquid 35 onto the substrate 2 and a plating liquid supplying line 33 through which the plating liquid 35 within the supply tank 31 is supplied into the discharge nozzle 32. Further, an ammonia gas storage unit 170 is connected to the supply tank 31, and a concentration of an ammonia component within the plating liquid 35 stored in the supply tank 31 can be maintained within a preset target range.
摘要翻译： 电镀装置20具有：基板保持旋转装置110，被配置为保持和旋转基板2;以及电镀液供给装置30，其被配置为将电镀液体35供给到基板2上。电镀液供给装置30具有供给槽31 被配置为在其中存储供给到基板2上的镀液35，将镀液33排出到基板2上的排出喷嘴32和供给槽31内的镀液35通过该电镀液供给路33 供给到排出喷嘴32.此外，氨气体收容部170与供给罐31连接，能够将储存在供给槽31内的镀液35内的氨成分浓度维持在预先设定的目标范围内。
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公开(公告)号：US20120183909A1
公开(公告)日：2012-07-19
申请号：US13499362
申请日：2010-08-20
IPC分类号： G03F7/30
CPC分类号： G03F7/3021 , G03F7/405 , H01L21/6715
摘要： A developing treatment method includes: a treatment solution supplying step of supplying a treatment solution made by diluting a hydrophobizing agent hydrophobizing a resist pattern with hydrofluoroether onto a substrate on which a rinse solution has been supplied after development of the resist pattern; a hydrophobic treatment stabilizing step of stabilizing a hydrophobic treatment of the resist pattern with the supply of the treatment solution stopped and rotation of the substrate almost stopped; and a treatment solution removing step of removing the treatment solution from a top of the substrate on which the treatment solution has been supplied. The hydrophobizing agent is trimethylsilyldimethyl-amine.
摘要翻译： 显影处理方法包括：处理溶液供给步骤，通过在形成抗蚀剂图案后，向其上提供了冲洗溶液供给的基板上，将通过将氢氟醚疏水化的疏水化剂稀释而成的处理液供给; 疏水性处理稳定化步骤，在停止供给处理液的同时稳定抗蚀剂图案的疏水处理，并且基板的旋转几乎停止; 以及从已经供给了处理液的基板的顶部除去处理液的处理液除去工序。 疏水化剂是三甲基甲硅烷基二甲基胺。
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6.发明授权Pattern forming method and method of manufacturing semiconductor device by using the same 失效使用该半导体器件的图案形成方法及其制造方法公开(公告)号：US08168377B2
公开(公告)日：2012-05-01
申请号：US12391679
申请日：2009-02-24
CPC分类号： H01L21/316 , H01L21/02126 , H01L21/02137 , H01L21/02282 , H01L21/02304 , H01L21/0337 , H01L21/31144 , H01L21/312 , H01L21/3122
摘要： The pattern forming method includes forming a catalyst film on a base layer having an uneven surface, wherein the catalyst layer is formed along the uneven surface of the base layer; forming a coating film by coating a fluid material on the catalyst film; forming an insoluble layer which is insoluble in a solvent in the coating film by reacting the coating film along the catalyst film; and maintaining the insoluble layer by removing an unreacted portion of the coating film by using the solvent.
摘要翻译： 图案形成方法包括在具有不平坦表面的基底层上形成催化剂膜，其中催化剂层沿着基底层的不平坦表面形成; 通过在催化剂膜上涂布流体材料形成涂膜; 通过使涂膜沿催化剂膜反应，形成不溶于涂膜的溶剂的不溶层; 并通过使用溶剂除去未涂覆的膜的未反应部分来维持不溶层。
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公开(公告)号：US20100075027A1
公开(公告)日：2010-03-25
申请号：US12405597
申请日：2009-03-17
IPC分类号： B05D3/12
CPC分类号： H01L21/288 , C23C18/1628 , C23C18/1669 , H01L21/6715 , H01L21/76849
摘要： A cap metal forming method capable of obtaining a uniform film thickness on the entire surface of a substrate is provided. The method for forming a cap metal on a copper wiring formed on a processing target surface of a substrate includes: holding the substrate so as to be rotatable; rotating the substrate in a processing target surface direction of the substrate; locating an end portion of an agitation member so as to face the processing target surface of a periphery portion of the substrate with a preset gap maintained therebetween; supplying a plating processing solution onto the processing target surface; and stopping the supply of the plating processing solution and moving the agitation member such that the end portion of the agitation member is separated away from the processing target surface of the substrate.
摘要翻译： 提供能够在基板的整个表面上获得均匀的膜厚度的盖金属成形方法。 在形成在基板的加工对象面上的铜布线上形成盖金属的方法包括：保持基板以可旋转; 在所述基板的处理对象面方向上旋转所述基板; 将搅拌构件的端部定位成面对保持在其间的预设间隙的基板的周边部分的处理目标表面; 将电镀处理液供给到所述加工对象面上; 停止电镀处理液的供给，使搅拌部件移动，使搅拌部件的端部与基板的加工对象面分离。
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公开(公告)号：US07521098B2
公开(公告)日：2009-04-21
申请号：US10727038
申请日：2003-12-04
CPC分类号： H01L21/02137 , B05D1/005 , B05D3/068 , H01L21/02203 , H01L21/02282 , H01L21/02351 , H01L21/31058 , H01L21/3124
摘要： A processing method according to the present invention coats a polar liquid film or forms an inorganic film on a surface of an organic film formed on a substrate as a protective film. The processing method comprises a modifying step of curing an organic film by irradiating the organic film with electron beams by means of an electron-beam irradiation device in a rare gas atmosphere, and an applying step of applying a polar liquid to the modified surface of the organic film or a film forming step of forming an inorganic film on the organic film. The organic film is cured and affinity for the polar liquid or the inorganic film is imparted to the organic film.
摘要翻译： 根据本发明的加工方法涂覆极性液膜或在形成在基板上的有机膜的表面上形成无机膜作为保护膜。 该处理方法包括通过在稀有气体气氛中通过电子束照射装置用电子束照射有机膜来固化有机膜的修改步骤，以及将极性液体施加到改性表面的涂布步骤 有机膜或在有机膜上形成无机膜的成膜步骤。 固化有机薄膜，赋予极性液体或无机薄膜亲和性。
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公开(公告)号：US20070128373A1
公开(公告)日：2007-06-07
申请号：US11606158
申请日：2006-11-30
CPC分类号： H01L21/6723 , C23C18/1628 , C23C18/1676 , C23C18/168 , H01L21/6708 , H01L21/67109 , H01L21/67248
摘要： An electroless plating apparatus which supplies a plating solution to a top surface of a substrate to effect electroless plating, comprises a substrate support section which supports a substrate, a plating-solution retaining section which retains the plating solution to be supplied to the top surface of the substrate, a plating-solution feeding pipe which guides the plating solution from the plating-solution retaining section to the top surface of the substrate supported by the substrate support section, a plating-solution temperature controlling mechanism which controls a temperature of the plating solution flowing in the plating-solution feeding pipe, and a suction mechanism which sucks the plating solution in the plating-solution feeding pipe toward the plating-solution retaining section when feeding of the plating solution to the top surface of the substrate through the plating-solution feeding pipe is stopped.
摘要翻译： 向基板的上表面供给电镀液的无电解电镀装置包括：支撑基板的基板支撑部，保持要供给到基板的上表面的电镀液的电镀液保持部; 基板，将电镀液从电镀液保持部引导到由基板支撑部支撑的基板的上表面的电镀液供给管，控制电镀液的温度的电镀液温度控制机构 在电镀溶液供给管中流动的吸附机构，在将电镀液通过电镀液供给到基板的上表面时，将电镀液供给管内的电镀液吸附到电镀液保持部的吸引机构 进料管停止。
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10.发明申请Method and apparatus for reforming film and controlling slimming amount thereof 审中-公开用于改造薄膜并控制其减肥量的方法和装置公开(公告)号：US20050214683A1
公开(公告)日：2005-09-29
申请号：US11064088
申请日：2005-02-24
申请人： Eiichi Nishimura , Takashi Tanaka , Gen You , Minoru Honda , Mitsuaki Iwashita
发明人： Eiichi Nishimura , Takashi Tanaka , Gen You , Minoru Honda , Mitsuaki Iwashita
IPC分类号： G03F7/40 , A61N5/00 , G03C5/00 , G21G5/00 , H01L21/027
CPC分类号： G03F7/40
摘要： In a film reforming method for reforming a film layer to be reformed by irradiating electron beams thereon, the electron beams are irradiated in a state where the film layer is cooled. Further, in a slimming amount controlling method for controlling a slimming amount of a resist film layer, the slimming amount thereof is controlled by the irradiation amount of electron beams irradiated thereon in a state where the resist film layer having a specified opening dimension is cooled. Furthermore, in a film reforming apparatus including a mounting unit for mounting thereon an object to be processed and an electron beam irradiating unit for irradiating electron beams on the object disposed on the mounting unit to thereby reform a film layer to be reformed, formed on an object, the electron beams are irradiated from the electron beam irradiating unit in a state where the film layer is cooled by a cooling unit provided in the mounting unit.
摘要翻译： 在通过在其上照射电子束来重整薄膜层的薄膜重整方法中，在薄膜层被冷却的状态下照射电子束。 此外，在用于控制抗蚀剂膜层的减肥量的减肥量控制方法中，在具有指定的开口尺寸的抗蚀剂膜层被冷却的状态下，通过照射在其上的电子束的照射量来控制其减肥量。 此外，在包括用于在其上安装待处理物体的安装单元和用于在设置在安装单元上的物体上照射电子束的电子束照射单元的薄膜重整设备中，从而将形成在其上的膜层重新形成 在由设置在安装单元中的冷却单元冷却膜层的状态下，从电子束照射单元照射电子束。
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