公开(公告)号：US20130008984A1

公开(公告)日：2013-01-10

申请号：US13618741

申请日：2012-09-14

申请人： Hyman Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong (John) Yuan ,  Hou Gong Wang ,  Salvador P. Umotoy ,  Sang Ho Yu

发明人： Hyman Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong (John) Yuan ,  Hou Gong Wang ,  Salvador P. Umotoy ,  Sang Ho Yu

IPC分类号： C23C16/455

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/4558 ,  H01J37/32449 ,  Y10T137/87265

摘要： Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

摘要翻译： 本发明的实施例提供了诸如等离子体增强型ALD（PE-ALD）的原子层沉积（ALD）的装置和方法。 在一些实施例中，提供了一种PE-ALD室，其包括与其中具有基板支撑件的室主体耦合的室盖组件。 在一个实施例中，室盖组件具有入口歧管组件，其包含围绕集中通道的环形通道，其中集中通道延伸穿过入口歧管组件，并且入口歧管组件还包含从环形通道延伸的注入孔， 集中通道侧壁，集中通道。 室盖组件还包括布置在入口歧管组件下方的喷头组件，设置在入口歧管组件和喷头组件之间的水箱，以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统（RPS） 与集中通道的流体通信。

公开(公告)号：US08291857B2

公开(公告)日：2012-10-23

申请号：US12494901

申请日：2009-06-30

申请人： Hyman Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong (John) Yuan ,  Hou Gong Wang ,  Salvador P. Umotoy ,  Sang Ho Yu

发明人： Hyman Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong (John) Yuan ,  Hou Gong Wang ,  Salvador P. Umotoy ,  Sang Ho Yu

IPC分类号： C23C16/452 ,  C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/4558 ,  H01J37/32449 ,  Y10T137/87265

摘要： Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

摘要翻译： 本发明的实施例提供了诸如等离子体增强型ALD（PE-ALD）的原子层沉积（ALD）的装置和方法。 在一些实施例中，提供了一种PE-ALD室，其包括与其中具有基板支撑件的室主体耦合的室盖组件。 在一个实施例中，室盖组件具有入口歧管组件，其包含围绕集中通道的环形通道，其中集中通道延伸穿过入口歧管组件，并且入口歧管组件还包含从环形通道延伸的注入孔， 集中通道侧壁，集中通道。 腔室盖组件还包括设置在入口歧管组件下方的喷头组件，设置在入口歧管组件和喷头组件之间的水箱，以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统（RPS） 与集中通道的流体通信。

公开(公告)号：US20100003406A1

公开(公告)日：2010-01-07

申请号：US12494901

申请日：2009-06-30

申请人： Hyman Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong (John) Yuan ,  Hou Gong Wang ,  Salvador P. Umotoy ,  Sang Ho Yu

发明人： Hyman Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong (John) Yuan ,  Hou Gong Wang ,  Salvador P. Umotoy ,  Sang Ho Yu

IPC分类号： C23C16/34

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/4558 ,  H01J37/32449 ,  Y10T137/87265

摘要： Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

摘要翻译： 本发明的实施例提供了诸如等离子体增强型ALD（PE-ALD）的原子层沉积（ALD）的装置和方法。 在一些实施例中，提供了一种PE-ALD室，其包括与其中具有基板支撑件的室主体耦合的室盖组件。 在一个实施例中，室盖组件具有入口歧管组件，其包含围绕集中通道的环形通道，其中集中通道延伸穿过入口歧管组件，并且入口歧管组件还包含从环形通道延伸的注入孔， 集中通道侧壁，集中通道。 腔室盖组件还包括设置在入口歧管组件下方的喷头组件，设置在入口歧管组件和喷头组件之间的水箱，以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统（RPS） 与集中通道的流体通信。

公开(公告)号：US20120000422A1

公开(公告)日：2012-01-05

申请号：US13232317

申请日：2011-09-14

申请人： Hyman Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong (John) Yuan ,  Hou Gong Wang ,  Salvador P. Umotoy ,  Sang Ho Yu

发明人： Hyman Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong (John) Yuan ,  Hou Gong Wang ,  Salvador P. Umotoy ,  Sang Ho Yu

IPC分类号： C23C16/455 ,  F17D1/20

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/4558 ,  H01J37/32449 ,  Y10T137/87265

摘要： Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

摘要翻译： 本发明的实施例提供了诸如等离子体增强型ALD（PE-ALD）的原子层沉积（ALD）的装置和方法。 在一些实施例中，提供了一种PE-ALD室，其包括与其中具有基板支撑件的室主体耦合的室盖组件。 在一个实施例中，室盖组件具有入口歧管组件，其包含围绕集中通道的环形通道，其中集中通道延伸穿过入口歧管组件，并且入口歧管组件还包含从环形通道延伸的注入孔， 集中通道侧壁，集中通道。 腔室盖组件还包括设置在入口歧管组件下方的喷头组件，设置在入口歧管组件和喷头组件之间的水箱，以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统（RPS） 与集中通道的流体通信。

公开(公告)号：US08747556B2

公开(公告)日：2014-06-10

申请号：US13618741

申请日：2012-09-14

申请人： Hyman W. H. Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong Yuan ,  Hougong Wang ,  Salvador P. Umotoy ,  Sang Ho Yu

发明人： Hyman W. H. Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong Yuan ,  Hougong Wang ,  Salvador P. Umotoy ,  Sang Ho Yu

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/4558 ,  H01J37/32449 ,  Y10T137/87265

摘要： Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

摘要翻译： 本发明的实施例提供了诸如等离子体增强型ALD（PE-ALD）的原子层沉积（ALD）的装置和方法。 在一些实施例中，提供了一种PE-ALD室，其包括与其中具有基板支撑件的室主体耦合的室盖组件。 在一个实施例中，室盖组件具有入口歧管组件，其包含围绕集中通道的环形通道，其中集中通道延伸穿过入口歧管组件，并且入口歧管组件还包含从环形通道延伸的注入孔， 集中通道侧壁，集中通道。 腔室盖组件还包括设置在入口歧管组件下方的喷头组件，设置在入口歧管组件和喷头组件之间的水箱，以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统（RPS） 与集中通道的流体通信。

公开(公告)号：US08293015B2

公开(公告)日：2012-10-23

申请号：US13232317

申请日：2011-09-14

申请人： Hyman W. H. Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong Yuan ,  Hougong Wang ,  Salvador P. Umotoy ,  Sang Ho Yu

发明人： Hyman W. H. Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong Yuan ,  Hougong Wang ,  Salvador P. Umotoy ,  Sang Ho Yu

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/4558 ,  H01J37/32449 ,  Y10T137/87265

摘要： Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

公开(公告)号：US06461435B1

公开(公告)日：2002-10-08

申请号：US09603117

申请日：2000-06-22

申请人： Karl A. Littau ,  Bevan Vo ,  Salvador P. Umotoy ,  Son N. Trinh ,  Chien-Teh Kao ,  Ken Kaung Lai ,  Bo Zheng ,  Ping Jian ,  Siqing Lu ,  Anzhong Chang

发明人： Karl A. Littau ,  Bevan Vo ,  Salvador P. Umotoy ,  Son N. Trinh ,  Chien-Teh Kao ,  Ken Kaung Lai ,  Bo Zheng ,  Ping Jian ,  Siqing Lu ,  Anzhong Chang

IPC分类号： C23C1600

CPC分类号： C23C16/45565 ,  C23C16/455 ,  H01J37/3244

摘要： A showerhead for distributing gases in a semiconductor process chamber. In one embodiment, a showerhead comprising a perforated center portion, a mounting portion circumscribing the perforated center portion and a plurality of bosses extending from the mounting portion each having a hole disposed therethrough is provided. Another embodiment of the invention provides a showerhead that includes a mounting portion having a first side circumscribing a perforated center portion. A ring extends from the first side of the mounting portion. A plurality of mounting holes are disposed in the mounting portion radially to either side of the ring. The showerhead provides controlled thermal transfer between the showerhead and chamber lid resulting in less deposition on the showerhead.

摘要翻译： 用于在半导体处理室中分配气体的喷头。 在一个实施例中，提供了一种喷头，包括穿孔中心部分，围绕穿孔中心部分的安装部分和从安装部分延伸的多个凸起，每个凸起具有穿过其中设置的孔。 本发明的另一个实施例提供了一种喷头，其包括具有围绕穿孔中心部分的第一侧面的安装部分。 环从安装部分的第一侧延伸。 多个安装孔径向地设置在安装部分的环的任一侧。 淋浴头在喷头和室盖之间提供受控的热转印，从而在喷头上沉积较少。

公开(公告)号：US08821637B2

公开(公告)日：2014-09-02

申请号：US12021825

申请日：2008-01-29

申请人： Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

发明人： Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

IPC分类号： C23C16/455 ,  C23C16/00

CPC分类号： C23C16/14 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/4411 ,  C23C16/45512 ,  C23C16/45523

摘要： Embodiments of the invention provide apparatuses for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a processing chamber is provided which includes a lid assembly containing a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., more preferably, from about 145° C. to about 155° C. The mixing cavity may be in fluid communication with a tungsten precursor source containing tungsten hexafluoride and a nitrogen precursor source containing ammonia. In some embodiments, a single processing chamber may be used to deposit metallic tungsten and tungsten nitride materials by CVD processes.

摘要翻译： 本发明的实施例提供了用于气相沉积含钨材料如金属钨和氮化钨的装置。 在一个实施例中，提供了一种处理室，其包括盖子组件，该盖子组件包含盖板，喷头，混合腔，分配腔和容纳在盖板内的电阻加热元件。 在一个示例中，电阻加热元件被配置成将盖板设置在约120℃至约180℃，优选约140℃至约160℃的温度范围内，更多 优选约145℃至约155℃。混合腔可与含有六氟化钨的钨前体源和含氨的氮前体源流体连通。 在一些实施例中，单个处理室可用于通过CVD工艺沉积金属钨和氮化钨材料。

公开(公告)号：US5766365A

公开(公告)日：1998-06-16

申请号：US472220

申请日：1995-06-07

申请人： Salvador P. Umotoy ,  Alan F. Morrison ,  Karl A. Littau ,  Richard A. Marsh ,  Lawrence Chung-Lai Lei

发明人： Salvador P. Umotoy ,  Alan F. Morrison ,  Karl A. Littau ,  Richard A. Marsh ,  Lawrence Chung-Lai Lei

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/00 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  H01L21/68 ,  H01L21/683 ,  H01L21/687 ,  C23C16/00

CPC分类号： C23C16/45521 ,  C23C16/458 ,  C23C16/4583 ,  C23C16/4585 ,  C23C16/46 ,  H01L21/67103 ,  H01L21/68 ,  H01L21/6833 ,  H01L21/68735 ,  H01L21/68792

摘要： A substrate processing apparatus comprising a processing chamber in which a substrate support is located. The substrate support, which is in the form of a heater pedestal, has a surface dimensioned to receive the substrate, and is circumscribed by a removable purge ring which defines an annulus between itself and the pedestal. At the outer edge of the pedestal is a purge gas manifold, in the form of a cavity between the purge ring and the pedestal. The lower end of the manifold is sealed by means of a mechanical seal that is formed at process temperature as the pedestal expands from heating and comes into contact with the purge ring's lower edge. The upper end of the manifold opens into the annulus defined by the purge ring and the pedestal. The manifold is arranged so that during processing, purge gas is injected into the manifold and projected toward the edge of a substrate received on the surface of the pedestal. This gas moves upwards through the annulus defined between the purge ring and the substrate support. Consequently, processing gas is prevented from contacting the extreme edge portion of the substrate. This reduces unwanted deposition on the peripheral edge and lower surface of the substrate.

摘要翻译： 一种基板处理装置，包括其中位于基板支撑件的处理室。 处于加热器基座形式的衬底支撑件具有尺寸适于接收衬底的表面，并且由可拆卸的清除环限定，该清除环在其与底座之间限定环形空间。 在基座的外边缘处是净化气体歧管，其形式为清洗环和基座之间的空腔。 歧管的下端通过机械密封进行密封，机械密封在工艺温度下形成，因为基座从加热膨胀并与清洗环的下边缘接触。 歧管的上端开口进入由清洗环和基座限定的环形空间。 歧管被布置成使得在处理期间，吹扫气体被注入到歧管中并且朝着接收在基座的表面上的基板的边缘突出。 该气体向上移动通过清洗环和衬底支撑件之间限定的环形空间。 因此，防止处理气体与基板的最外缘部分接触。 这减少了衬底的外围边缘和下表面上的不希望的沉积。

公开(公告)号：US5888304A

公开(公告)日：1999-03-30

申请号：US626789

申请日：1996-04-02

申请人： Salvador P. Umotoy ,  Alan F. Morrison ,  Karl A. Littau ,  Richard A. Marsh ,  Lawrence Chung-Lai Lei ,  Dale DuBois

发明人： Salvador P. Umotoy ,  Alan F. Morrison ,  Karl A. Littau ,  Richard A. Marsh ,  Lawrence Chung-Lai Lei ,  Dale DuBois

IPC分类号： C23C16/02 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/205 ,  H01L21/285 ,  C23C16/00

CPC分类号： C23C16/45521 ,  C23C16/4585 ,  C23C16/46

摘要： This invention provides a method and apparatus for supporting a wafer in a processing chamber, where the wafer is supported and heated from below via a heater pedestal having a diameter larger than that of the wafer. A process fluid flowing downward toward the top of the wafer is inhibited from depositing near the wafer edge by a shadow ring. The shadow ring, which is placed over but does not contact the wafer, physically masks an annular strip of the wafer near its edge. The shadow ring inhibits deposition of process fluides on the wafer in two distinct ways. First, the shadow ring physically obstructs process gas, flowing downward from above the wafer, from depositing on the masked portion of the wafer. Second, the shadow ring is used to direct a flow of a purge gas to inhibit process gas from seeping under the shadow ring and depositing near the wafer edge. A purge gas manifold is defined by a cylindrical annulus located concentrically below the shadow ring and circumscribing the heater pedestal. A purge gap between the wafer and the shadow ring forms the outlet of the purge gas manifold. The purge gas flows out of the purge gap, inhibiting the process gas from entering the purge gap, and thus further inhibiting deposition on the masked portion of the wafer.

摘要翻译： 本发明提供了一种用于在处理室中支撑晶片的方法和装置，其中通过直径大于晶片直径的加热器基座从下方支撑晶片并从其下被加热。 向晶片顶部向下流动的工艺流体被阴影环抑制在晶片边缘附近沉积。 放置在但不接触晶片的阴影环在其边缘附近物理屏蔽晶片的环形条。 阴影环以两种截然不同的方式阻止了工艺流程在晶片上沉积。 首先，阴影环物理地阻挡从晶片上方向下流动的工艺气体沉积在晶片的掩蔽部分上。 第二，阴影环用于引导吹扫气体的流动，以阻止处理气体在阴影环下渗出并沉积在晶片边缘附近。 吹扫气体歧管由同心地位于阴影环下方并围绕加热器基座的圆柱形环限定。 晶片和阴影环之间的吹扫间隙形成吹扫气体歧管的出口。 净化气体流出吹扫间隙，阻止处理气体进入吹扫间隙，从而进一步抑制沉积在晶片的掩蔽部分上。