公开(公告)号：US20250157904A1

公开(公告)日：2025-05-15

申请号：US19019362

申请日：2025-01-13

Applicant: InnoLux Corporation

Inventor： Hsueh-Hsuan Chou ,  Chia-Chieh Fan ,  Kuan-Jen Wang ,  Cheng-Chi Wang ,  Yi-Hung Lin ,  Li-Wei Sung

IPC: H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L23/00 ,  H01L23/31 ,  H01L25/00 ,  H01L25/065

Abstract: A manufacturing method of a package device is provided. First, a carrier is provided, and then a conductive element is formed on the carrier. Thereafter, a conductive pad is formed on the conductive element. Next, a redistribution layer is formed on the conductive pad. Then, the carrier and at least a part of the conductive element are removed.

公开(公告)号：US20240421060A1

公开(公告)日：2024-12-19

申请号：US18815875

申请日：2024-08-27

Applicant: Innolux Corporation

Inventor： Kuo-Jung Fan ,  Cheng-Chi Wang ,  Heng-Shen Yeh ,  Chuan-Ming Yeh

IPC: H01L23/498 ,  H01L21/48

Abstract: An electronic device includes a first metal layer, a first insulating layer, a second metal layer, a second insulating layer, a third metal layer, a third insulating layer, a fourth metal layer, a fourth insulating layer and a conductive structure. The first insulating layer is disposed on the first metal layer. The second metal layer is disposed on the first insulating layer. The second insulating layer is disposed on the second metal layer. The third metal layer is disposed on the second insulating layer. The third insulating layer is disposed on the third metal layer. The fourth metal layer is disposed on the third insulating layer. The fourth insulating layer is disposed on the fourth metal layer. The conductive structure is disposed on and electrically connected to the fourth insulating layer. A chemical resistance of the first insulating layer is greater than a chemical resistance of the fourth insulating layer.

公开(公告)号：US20240120304A1

公开(公告)日：2024-04-11

申请号：US17993905

申请日：2022-11-24

Applicant: Innolux Corporation

Inventor： Tzu-Sheng Wu ,  Haw-Kuen Liu ,  Chung-Jyh Lin ,  Cheng-Chi Wang ,  Wen-Hsiang Liao ,  Te-Hsun Lin

IPC: H01L23/00

CPC classification number: H01L24/13 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/16 ,  H01L24/17 ,  H01L25/16 ,  H01L2224/034 ,  H01L2224/0362 ,  H01L2224/05005 ,  H01L2224/05017 ,  H01L2224/05018 ,  H01L2224/05082 ,  H01L2224/05541 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05573 ,  H01L2224/0603 ,  H01L2224/13005 ,  H01L2224/13082 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/17163 ,  H01L2924/19041 ,  H01L2924/19043

Abstract: The disclosure provides an electronic device and a manufacturing method thereof. The electronic device includes a package structure, a circuit structure, a bonding structure and an external element. The circuit structure is disposed on the package structure and is electrically connected to the package structure. The circuit structure has a recess. The bonding structure includes a first bonding pad and a second bonding pad. The second bonding pad is disposed in the recess, and the second bonding pad is disposed on the first bonding pad. The bonding structure is disposed between the circuit structure and the external element. The external element is electrically connected to the circuit structure through the bonding structure. A width of the first bonding pad is smaller than a width of the second bonding pad.

公开(公告)号：US20230411272A1

公开(公告)日：2023-12-21

申请号：US18311898

申请日：2023-05-04

Applicant: Innolux Corporation

Inventor： Cheng-Chi Wang ,  Jui-Jen Yueh ,  Kuan-Feng Lee

IPC: H01L23/498 ,  H01L23/31 ,  H01L23/00 ,  H01L21/56

CPC classification number: H01L23/49838 ,  H01L23/49894 ,  H01L23/49822 ,  H01L23/3107 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/96 ,  H01L24/97 ,  H01L21/561 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2924/10161

Abstract: An electronic device including a chip, an element structure layer, a redistribution structure layer and a protective layer is provided. The chip has an active surface and a plurality of contacts disposed on the active surface. The element structure layer is disposed adjacent to the active surface and has a switch element. The switch element is electrically connected to the chip through at least one of the plurality of contacts. The redistribution structure layer is disposed adjacent to the active surface and is electrically connected to the chip through at least one of the plurality of contacts. The protective layer includes a first portion and a second portion. The first portion surrounds the chip, and the second portion surrounds the element structure layer and the redistribution structure layer. A manufacturing method of an electronic device is also provided.

公开(公告)号：US10707152B2

公开(公告)日：2020-07-07

申请号：US15844907

申请日：2017-12-18

Applicant: InnoLux Corporation

Inventor： Ming-Yen Weng ,  Ker-Yih Kao ,  Chia-Chi Ho ,  Tsutomu Shinozaki ,  Cheng-Chi Wang ,  I-Yin Li

IPC: H01L23/66 ,  H01L21/48 ,  H01L23/485 ,  H01L21/311 ,  H01L25/065 ,  H01Q1/38

Abstract: A high-frequency device manufacturing method is provided. The method includes providing a substrate; forming a conductive material on the substrate; standing the substrate and the conductive material for a first time duration; forming a conductive layer by sequentially repeating the steps of forming the conductive material and standing at least once; and patterning the conductive layer. The thickness of the conductive layer is in a range from 0.9 μm to 10 μm. A high-frequency device is also provided.

公开(公告)号：US20190214288A1

公开(公告)日：2019-07-11

申请号：US16211194

申请日：2018-12-05

Applicant: InnoLux Corporation

Inventor： Chia-Chieh Fan ,  Chin-Lung Ting ,  Cheng-Chi Wang ,  Ming-Tsang Wu

IPC: H01L21/683 ,  H01L23/00 ,  H01L21/56 ,  H01L21/48 ,  H01L25/00 ,  H01L25/10

CPC classification number: H01L21/6835 ,  H01L21/4853 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3128 ,  H01L24/97 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68359 ,  H01L2224/0231 ,  H01L2224/0233 ,  H01L2224/95001 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/3511

Abstract: A manufacturing method of semiconductor device includes providing a substrate, forming a sacrificial layer on the substrate, disposing first chips on the sacrificial layer, forming a first dielectric layer surrounding the first chips, forming trenches in the first dielectric layer, and forming a second dielectric layer in the trenches, wherein an upper surface of the first dielectric layer and an upper surface of the second dielectric layer are at a same plane.

公开(公告)号：US12238863B2

公开(公告)日：2025-02-25

申请号：US18067859

申请日：2022-12-19

Applicant: InnoLux Corporation

Inventor： Cheng-Chi Wang ,  Kuan-Feng Lee ,  Jui-Jen Yueh

IPC: H05K1/02 ,  H05K1/11 ,  H05K3/40 ,  H10K50/844 ,  H10K59/122 ,  H10K59/124 ,  H10K59/131 ,  H10K59/38 ,  H10K59/88

Abstract: An electronic device is provided. The electronic device includes a substrate structure, a control unit, a first circuit structure, and an electronic unit. The substrate structure has a conductive via pattern and a dummy via pattern. The control unit is electrically connected to the conductive via pattern. The first circuit structure is electrically connected to the conductive via pattern. The electronic unit is electrically connected to the control unit through the first circuit structure. The dummy via pattern is electrically insulated from the first circuit structure.

公开(公告)号：US20250014913A1

公开(公告)日：2025-01-09

申请号：US18893927

申请日：2024-09-23

Applicant: Innolux Corporation

Inventor： Yi-Hung Lin ,  Wen-Hsiang Liao ,  Cheng-Chi Wang ,  Yi-Chen Chou ,  Fuh-Tsang Wu ,  Ker-Yih Kao

IPC: H01L21/56 ,  H01L21/02 ,  H01L21/48 ,  H01L23/31

Abstract: An electronic device includes a wafer, a redistribution layer and a multi-layer insulating structure. The redistribution layer is disposed on the wafer. The multi-layer insulating structure is disposed between the wafer and the redistribution layer. The multi-layer insulating structure includes a first layer and a second layer. A Young's modulus of the first layer is different from a Young's modulus of the second layer.

公开(公告)号：US20230117955A1

公开(公告)日：2023-04-20

申请号：US17746970

申请日：2022-05-18

Applicant: Innolux Corporation

Inventor： Chin-Lung Ting ,  Ker-Yih Kao ,  Cheng-Chi Wang ,  Kuang-Ming Fan ,  Chun-Hung Chen ,  Wen-Hsiang Liao ,  Ming-Hsien Shih

IPC: H01L23/00 ,  H01L21/469

Abstract: An electronic device including a connection element is provided. The connection element includes a first metal layer, a first insulation layer, and a second insulation layer. The first insulation layer is disposed on the first metal layer and has a first hole and a second hole. The second insulation layer is disposed on the first insulation layer. The first hole exposes a portion of the first metal layer, and the second insulation layer extends into the second hole. A method of fabricating an electronic device is also provided.

公开(公告)号：US11551970B2

公开(公告)日：2023-01-10

申请号：US17109101

申请日：2020-12-01

Applicant: InnoLux Corporation

Inventor： Cheng-Chi Wang ,  Yeong-E Chen ,  Cheng-En Cheng

IPC: H01L21/768 ,  H01L21/683 ,  H01L21/027 ,  H01L21/288 ,  H01L21/48 ,  H01L21/66

Abstract: The present disclosure discloses a method for manufacturing an electronic device, including: setting a basic working area; providing a supporting platform having a plurality of vacuum valves; disposing a substrate on the supporting platform; applying vacuum attraction to a portion of the substrate through a portion of the plurality of vacuum valves, wherein the portion of the substrate corresponding to the vacuum attraction is defined as an attracted region; and performing an exposure on a portion of the attracted region, wherein an area of the attracted region is larger than the basic working area and smaller than an area of the supporting platform.