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公开(公告)号:US20250112140A1
公开(公告)日:2025-04-03
申请号:US18374609
申请日:2023-09-28
Applicant: Intel Corporation
Inventor: Rahul BHURE , Mitchell PAGE , Joseph PEOPLES , Jieying KONG , Nicholas S. HAEHN , Astitva TRIPATHI , Bainye Francoise ANGOUA , Yosef KORNBLUTH , Daniel ROSALES-YEOMANS , Joshua STACEY , Aaditya Anand CANDADAI , Yonggang Yong LI , Tchefor NDUKUM , Scott COATNEY , Gang DUAN , Jesse JONES , Srinivas Venkata Ramanuja PIETAMBARAM , Dilan SENEVIRATNE , Matthew ANDERSON
IPC: H01L23/498 , H01L23/00 , H01L23/15
Abstract: Embodiments disclosed herein include package substrates with a glass core. In an embodiment, an apparatus comprises a core with a first width, and the core comprises a glass layer. In an embodiment, a via is provided through a thickness of the core, where the via is electrically conductive. In an embodiment, a first layer is provided over the core, where the first layer comprises a second width that is smaller than the first width. In an embodiment, a second layer is provided under the core, where the second layer comprises a third width that is smaller than the first width.
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公开(公告)号:US20250112136A1
公开(公告)日:2025-04-03
申请号:US18374937
申请日:2023-09-29
Applicant: Intel Corporation
Inventor: Bohan SHAN , Jesse JONES , Zhixin XIE , Bai NIE , Shaojiang CHEN , Joshua STACEY , Mitchell PAGE , Brandon C. MARIN , Jeremy D. ECTON , Nicholas S. HAEHN , Astitva TRIPATHI , Yuqin LI , Edvin CETEGEN , Jason M. GAMBA , Jacob VEHONSKY , Jianyong MO , Makoyi WATSON , Shripad GOKHALE , Mine KAYA , Kartik SRINIVASAN , Haobo CHEN , Ziyin LIN , Kyle ARRINGTON , Jose WAIMIN , Ryan CARRAZZONE , Hongxia FENG , Srinivas Venkata Ramanuja PIETAMBARAM , Gang DUAN , Dingying David XU , Hiroki TANAKA , Ashay DANI , Praveen SREERAMAGIRI , Yi LI , Ibrahim EL KHATIB , Aaron GARELICK , Robin MCREE , Hassan AJAMI , Yekan WANG , Andrew JIMENEZ , Jung Kyu HAN , Hanyu SONG , Yonggang Yong LI , Mahdi MOHAMMADIGHALENI , Whitney BRYKS , Shuqi LAI , Jieying KONG , Thomas HEATON , Dilan SENEVIRATNE , Yiqun BAI , Bin MU , Mohit GUPTA , Xiaoying GUO
IPC: H01L23/498 , H01L23/15
Abstract: Embodiments disclosed herein include apparatuses with glass core package substrates. In an embodiment, an apparatus comprises a substrate with a first surface and a second surface opposite from the first surface. A sidewall is between the first surface and the second surface, and the substrate comprises a glass layer. In an embodiment, a via is provided through the substrate between the first surface and the second surface, and the via is electrically conductive. In an embodiment, a layer in contact with the sidewall of the substrate surrounds a perimeter of the substrate.
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公开(公告)号:US20250113434A1
公开(公告)日:2025-04-03
申请号:US18374617
申请日:2023-09-28
Applicant: Intel Corporation
Inventor: Bai NIE , Mitchell PAGE , Junxin WANG , Srinivas Venkata Ramanuja PIETAMBARAM , Haifa HARIRI , Nicholas S. HAEHN , Astitva TRIPATHI , Yuqin LI , Hongxia FENG , Haobo CHEN , Bohan SHAN , Hiroki TANAKA , Leonel R. ARANA , Yonggang Yong LI
IPC: H05K1/02 , H01L23/15 , H01L23/498 , H05K1/03 , H05K1/11
Abstract: Embodiments disclosed herein include package substrates with a glass core. In an embodiment, an apparatus comprises a substrate with a first surface and a second surface opposite from the first surface, and the substrate is a solid glass layer. In an embodiment, an opening is provided through a thickness of the substrate, where the opening comprises a sidewall that is non-orthogonal with the first surface of the substrate. In an embodiment a corner at a junction between the sidewall and the first surface is rounded. In an embodiment, a via is provided in the opening, where the via is electrically conductive.
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公开(公告)号:US20250112174A1
公开(公告)日:2025-04-03
申请号:US18374618
申请日:2023-09-28
Applicant: Intel Corporation
Inventor: Siddarth KUMAR , Shripad GOKHALE , Edvin CETEGEN , Praneeth NAMPALLY , Astitva TRIPATHI , Sairam AGRAHARAM
IPC: H01L23/00 , H01L21/3205
Abstract: Embodiments herein relate to systems, apparatuses, techniques or processes for forming an annealed shape metal alloy (SMA) on a wafer or a die complex. In embodiments, the annealed SMA, when heated above a transition temperature, may enter an Austenite phase and return to the shape that the wafer or die complex had when it was annealed. In embodiments, this may maintain a shape of a wafer or a die complex during higher temperature processing, for example during reflow, when the package undergoes fabrication. Other embodiments may be described and/or claimed.
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