Abstract:
Embodiments may relate an x-ray filter. The x-ray filter may be configured to be positioned between an x-ray source output and a device under test (DUT) that is to be x-rayed. The x-ray filter may include at least 80% titanium (Ti) by weight. Other embodiments may be described or claimed.
Abstract:
According to various examples, a method for non-destructive detection of defects in a semiconductor die is described. The method may include positioning an emitter above the semiconductor die. The method may include generating an emitted wave using the emitter that is directed to a focal point on a surface of the die. The method may include generating a reflected wave from the focal point. The focal point may act as a point source reflecting the emitted wave. The method may include positioning a receiver above the die to receive the reflected wave. The method may also include measuring the reflected wave to detect modulations in amplitude in the reflected wave.
Abstract:
Disclosed herein are systems and methods for the characterization of transmission media, among other embodiments. For example, a system for characterizing a transmission medium may include: a waveform generator to generate an initial input waveform; waveform pre-processing circuitry to process the initial waveform to generate a processed input waveform for provision to the transmission medium, wherein the processed input waveform has a maximum amplitude greater than a maximum amplitude of the initial input waveform; and waveform output circuitry to display or store data representative of an initial output waveform, wherein the initial output waveform is output from the transmission medium as a reflection or transmission of the processed input waveform.
Abstract:
Some forms relate to an electronic assembly includes a first substrate that has a copper pad mounted to the first substrate. The electronic assembly further includes a second substrate that includes a copper redistribution layer mounted on the second substrate. The electronic assembly further includes bismuth-rich solder that includes 10-40 w.t. % tin. The bismuth-rich solder is electrically engaged with the copper pad and the copper redistribution layer. In some forms, the copper redistribution layer is another copper pad. The first substrate may include a memory die and the second substrate may include a logic die. In other forms, the first and second substrates may be part of a variety of different electronic components. The types of electronic components that are associated with the first and second substrates will depend on part on the application where the electronic assembly is be utilized (among other factors).
Abstract:
Circuit device inspection system using temperature gradients. In some embodiments, a system may include an infrared camera, first and second temperature sources, controller circuitry to cause the infrared camera to capture an infrared image of a region of a circuit device and to cause the first and second temperature sources to generate first and second temperature outputs to be applied to first and second locations on the circuit device, and processing circuitry to generate temperature gradient data. The temperature gradient data may be indicative of discontinuities in traces in the circuit device.
Abstract:
Embodiments include devices, systems and processes for using a white light interferometer (WLI) microscope with a tilted objective lens to perform in-line monitoring of both resist footing defects and conductive trace undercut defects. The defects may be detected at the interface between dry film resist (DFR) footings and conductive trace footing found on insulating layer top surfaces of a packaging substrate. Such footing and undercut defects may other wise be considered “hidden defects”. Using the WLI microscope with a tilted objective lens provides a high-throughput and low cost metrology and tool for non-destructive, non-contact, in-line monitoring.
Abstract:
Generally discussed herein are systems, apparatuses, and methods that can detect a defect in a die. According to an example, a method can include transmitting a first beam of light with a wavelength and optical power configured to produce a reflected beam with at least one milli-Watt of power, linearly polarizing the first beam of light in a specific direction, circularly polarizing the linearly polarized light by a quarter wavelength to create circularly polarized light, directing the circularly polarized light to a device under test, linearly polarizing light reflected off the device under test by a quarter wavelength, or creating an image of the linearly polarized light reflected off the device under test.
Abstract:
Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface; a die having a first surface and an opposing second surface, wherein the first surface of the die is coupled to the second surface of the package substrate; a cooling apparatus thermally coupled to the second surface of the die; and a thermal interface material (TIM) between the second surface of the die and the cooling apparatus, wherein the TIM includes an indium alloy having a liquidus temperature equal to or greater than about 245 degrees Celsius.
Abstract:
An electrical characterization and fault isolation probe can include a cable, a connector, and a coating over a portion of the cable. The cable can have a first conductor having a first impedance, a second conductor having a second impedance, and a dielectric surrounding the first conductor and electrically isolating the first conductor from the second conductor. The connector can physically couple to, and be in electrical communication with, the cable. The connector can include a first electrical communication pathway and a second electrical communication pathway. The first electrical communication pathway can be electrically isolated from the second electrical communication pathway. The first electrical communication pathway can be in electrical communication with the first conductor. The second electrical communication pathway can be in electrical communication with the second conductor. The connector can have a fifth impedance.
Abstract:
According to the various examples, a fully integrated system and method for failure analysis using RF-based thermometry enable the detection and location of defects and failures in complex semiconductor packaging architectures. The system provides synchronous amplified RF signals to generate unique thermal signatures at defect locations based on dielectric relaxation loss and heating.