公开(公告)号：US09834860B2

公开(公告)日：2017-12-05

申请号：US12904090

申请日：2010-10-13

申请人： Lori D. Washington ,  David P. Bour ,  Gregg Higashi ,  Gang He

发明人： Lori D. Washington ,  David P. Bour ,  Gregg Higashi ,  Gang He

IPC分类号： C30B25/16 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  C30B29/42 ,  H01L21/02

CPC分类号： C30B25/02 ,  C30B25/183 ,  C30B29/40 ,  C30B29/42 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262

摘要： Embodiments of the invention generally relate processes for epitaxial growing Group III/V materials at high growth rates, such as about 30 μm/hr or greater, for example, about 40 μm/hr, about 50 μm/hr, about 55 μm/hr, about 60 μm/hr, or greater. The deposited Group III/V materials or films may be utilized in solar, semiconductor, or other electronic device applications. In some embodiments, the Group III/V materials may be formed or grown on a sacrificial layer disposed on or over the support substrate during a vapor deposition process. Subsequently, the Group III/V materials may be removed from the support substrate during an epitaxial lift off (ELO) process. The Group III/V materials are thin films of epitaxially grown layers which contain gallium arsenide, gallium aluminum arsenide, gallium indium arsenide, gallium indium arsenide nitride, gallium aluminum indium phosphide, phosphides thereof, nitrides thereof, derivatives thereof, alloys thereof, or combinations thereof.

公开(公告)号：US09175393B1

公开(公告)日：2015-11-03

申请号：US13222890

申请日：2011-08-31

申请人： Gregg Higashi ,  Khurshed Sorabji ,  Lori D. Washington ,  Andreas Hegedus

发明人： Gregg Higashi ,  Khurshed Sorabji ,  Lori D. Washington ,  Andreas Hegedus

IPC分类号： C23C16/50 ,  H01L21/306 ,  C23F1/00 ,  C23C16/455 ,  C23C16/458

CPC分类号： H01J37/32834 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/54 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/67115 ,  H01L21/6776

摘要： A showerhead for a semiconductor-processing reactor formed by an array of showerhead tiles. Each showerhead tile has a plurality of process gas apertures, which may be in a central area of the tile or may extend over the entire tile. Each showerhead tile can be dimensioned for processing a respective substrate or the array can be dimensioned for processing a substrate. An exhaust region surrounds the process gas apertures. The exhaust region has at least one exhaust aperture, and may include an exhaust slot, a plurality of connected exhaust slots or a plurality of exhaust apertures. The exhaust region surrounds the array of showerhead tiles, or a respective portion of the exhaust region surrounds the plurality of process gas apertures in each showerhead tile or group of showerhead tiles. A gas curtain aperture may be between the exhaust region and the process gas apertures of one of the showerhead tiles or adjacent to the central area of the tile.

摘要翻译： 一种用于由喷头瓦片阵列形成的半导体处理反应器的喷头。 每个喷头瓦具有多个处理气体孔口，其可以在瓦片的中心区域中，或者可以在整个瓦片上延伸。 每个喷头砖的尺寸可以被设计用于处理相应的基板，或者该阵列的尺寸可以用于处理基板。 排气区围绕工艺气体孔。 排气区域具有至少一个排气孔，并且可以包括排气槽，多个连接的排气槽或多个排气孔。 排气区域围绕阵列的喷头瓦片，或者排气区域的相应部分围绕每个喷头瓦片或一组喷头瓦片中的多个处理气体孔。 气幕孔可以在排气区域和淋浴喷头瓦片之一的邻近瓦片的中心区域的处理气体孔之间。

公开(公告)号：US09982346B2

公开(公告)日：2018-05-29

申请号：US13222881

申请日：2011-08-31

申请人： Gregg Higashi ,  Khurshed Sorabji ,  Lori D. Washington

发明人： Gregg Higashi ,  Khurshed Sorabji ,  Lori D. Washington

IPC分类号： C23C16/00 ,  C23C16/455 ,  C23C16/458 ,  C23C16/48

CPC分类号： C23C16/45565 ,  C23C16/45591 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/481

摘要： A chemical vapor deposition (CVD) reactor comprises a deposition zone, a substrate carrier and a liner assembly. The deposition zone is constructed so as to have a positive pressure reactant gases fixed showerhead introducing reactant gas supporting thin film CVD deposition. The substrate carrier movably supports a substrate and the liner assembly within the deposition zone and is heated so as to be subjected to a CVD process. The liner assembly partly encloses selected portions of the deposition zone, particularly portions of the substrate carrier and thereby enclose a hot zone surrounding a substrate to be processed so as to retain heat in that zone but allows gas flow radially outwardly toward walls of a surrounding cold-wall reactor with exhaust ports surrounding the deposition zone that exhaust spent reactant gases. The liner assembly is a sink for solid reaction byproducts while gaseous reaction byproducts are pumped out at the exhaust ports. The liner assembly is linearly movable away from the fixed showerhead.

公开(公告)号：US09212422B2

公开(公告)日：2015-12-15

申请号：US13222840

申请日：2011-08-31

申请人： Gregg Higashi ,  Alexander Lerner ,  Khurshed Sorabji ,  Lori D. Washington

发明人： Gregg Higashi ,  Alexander Lerner ,  Khurshed Sorabji ,  Lori D. Washington

IPC分类号： C23C16/455

CPC分类号： C23C16/45565 ,  C23C16/45519

摘要： A chemical vapor deposition reactor has one or more deposition zones bounded by gas flow virtual walls, within a housing having closed walls. Each deposition zone supports chemical vapor deposition onto a substrate. Virtual walls formed of gas flows laterally surround the deposition zone, including a first gas flow of reactant gas from within the deposition zone and a second gas flow of non-reactant gas from a region laterally external to the deposition zone. The first and second gas flows are mutually pressure balanced to form the virtual walls. The virtual walls are formed by merging of gas flows at the boundary of each deposition zone. The housing has an exhaust valve to prevent pressure differences or pressure build up that would destabilize the virtual walls. Cross-contamination is reduced, between the deposition zones and the closed walls of the housing or an interior region of the housing outside the gas flow virtual walls.

摘要翻译： 化学气相沉积反应器具有由气流虚拟壁限定的一个或多个沉积区，在具有封闭壁的壳体内。 每个沉积区支持化学气相沉积到基底上。 由气体流形成的虚拟壁横向包围沉积区，包括来自沉积区内的反应气体的第一气流和非反应气体从沉积区的横向外侧的区域的第二气流。 第一和第二气体流量相互压力平衡以形成虚拟壁。 虚拟壁通过在每个沉积区的边界处合并气流而形成。 壳体具有排气阀，以防止压力差或压力增加，这将破坏虚拟墙体的稳定性。 在沉积区域和壳体的封闭壁之间或在气流虚拟壁外部的壳体的内部区域之间的交叉污染减少。

公开(公告)号：US20130052346A1

公开(公告)日：2013-02-28

申请号：US13222840

申请日：2011-08-31

申请人： Gregg Higashi ,  Alexander Lerner ,  Khurshed Sorabji ,  Lori D. Washington

发明人： Gregg Higashi ,  Alexander Lerner ,  Khurshed Sorabji ,  Lori D. Washington

IPC分类号： C23C16/455

CPC分类号： C23C16/45565 ,  C23C16/45519

摘要： A chemical vapor deposition reactor has one or more deposition zones bounded by gas flow virtual walls, within a housing having closed walls. Each deposition zone supports chemical vapor deposition onto a substrate. Virtual walls formed of gas flows laterally surround the deposition zone, including a first gas flow of reactant gas from within the deposition zone and a second gas flow of non-reactant gas from a region laterally external to the deposition zone. The first and second gas flows are mutually pressure balanced to form the virtual walls. The virtual walls are formed by merging of gas flows at the boundary of each deposition zone. The housing has an exhaust valve to prevent pressure differences or pressure build up that would destabilize the virtual walls. Cross-contamination is reduced, between the deposition zones and the closed walls of the housing or an interior region of the housing outside the gas flow virtual walls.

摘要翻译： 化学气相沉积反应器具有由气流虚拟壁限定的一个或多个沉积区，在具有封闭壁的壳体内。 每个沉积区支持化学气相沉积到基底上。 由气体流形成的虚拟壁横向包围沉积区，包括来自沉积区内的反应气体的第一气流和非反应气体从沉积区的横向外侧的区域的第二气流。 第一和第二气体流量相互压力平衡以形成虚拟壁。 虚拟壁通过在每个沉积区的边界处合并气流而形成。 壳体具有排气阀，以防止压力差或压力增加，这将破坏虚拟墙体的稳定性。 在沉积区域和壳体的封闭壁之间或在气流虚拟壁外部的壳体的内部区域之间的交叉污染减少。

公开(公告)号：US20130052371A1

公开(公告)日：2013-02-28

申请号：US13222881

申请日：2011-08-31

申请人： Gregg Higashi ,  Khurshed Sorabji ,  Lori D. Washington

发明人： Gregg Higashi ,  Khurshed Sorabji ,  Lori D. Washington

IPC分类号： C23C16/48 ,  C23C16/458 ,  C23C16/46 ,  C23C16/455

CPC分类号： C23C16/45565 ,  C23C16/45591 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/481

摘要： A chemical vapor deposition (CVD) reactor comprises a deposition zone, a substrate carrier and a liner assembly. The deposition zone is constructed so as to have a positive pressure reactant gases fixed showerhead introducing reactant gas supporting thin film CVD deposition. The substrate carrier movably supports a substrate and the liner assembly within the deposition zone and is heated so as to be subjected to a CVD process. The liner assembly partly encloses selected portions of the deposition zone, particularly portions of the substrate carrier and thereby enclose a hot zone surrounding a substrate to be processed so as to retain heat in that zone but allows gas flow radially outwardly toward walls of a surrounding cold-wall reactor with exhaust ports surrounding the deposition zone that exhaust spent reactant gases. The liner assembly is a sink for solid reaction byproducts while gaseous reaction byproducts are pumped out at the exhaust ports. The liner assembly is linearly movable away from the fixed showerhead.

摘要翻译： 化学气相沉积（CVD）反应器包括沉积区，衬底载体和衬垫组件。 沉积区被构造成具有正压反应物气体固定喷头引入反应气体支持薄膜CVD沉积。 衬底载体可移动地将衬底和衬垫组件支撑在沉积区内并被加热以便进行CVD工艺。 衬套组件部分地包围沉积区域的特定部分，特别是衬底载体的部分，从而包围围绕要处理的衬底的热区域，以便在该区域中保持热量，但允许气体径向向外流向周围冷却的壁 - 反应器，其具有围绕沉积区的排气口，排出废反应物气体。 衬套组件是用于固体反应副产物的水槽，而气体反应副产物在排气口处被泵出。 衬套组件可以离开固定式喷头线性移动。

公开(公告)号：US07976631B2

公开(公告)日：2011-07-12

申请号：US11873132

申请日：2007-10-16

申请人： Brian H. Burrows ,  Alexander Tam ,  Ronald Stevens ,  Kenric T. Choi ,  James D. Felsch ,  Jacob Grayson ,  Sumedh Acharya ,  Sandeep Nijhawan ,  Lori D. Washington ,  Nyi O. Myo

发明人： Brian H. Burrows ,  Alexander Tam ,  Ronald Stevens ,  Kenric T. Choi ,  James D. Felsch ,  Jacob Grayson ,  Sumedh Acharya ,  Sandeep Nijhawan ,  Lori D. Washington ,  Nyi O. Myo

IPC分类号： C23C16/00 ,  C23C16/455 ,  H01L21/306 ,  H01L21/3065

CPC分类号： C23C16/45565 ,  C23C16/45514 ,  C23C16/45519 ,  C23C16/45574 ,  C23C16/45578 ,  C30B25/14 ,  C30B29/403 ,  Y10T137/0318 ,  Y10T137/87153

摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.

摘要翻译： 提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。 在一个实施例中，使用金属有机化学气相沉积（MOCVD）工艺在多个基板上沉积III族氮化物膜。 将III族前体，例如三甲基镓，三甲基铝或三甲基铟，以及含氮前体，例如氨，被输送到多个分离前体气体的直通道。 将前体气体注入到混合通道中，在混合通道中气体被混合，然后进入含有底物的处理体积。 提供热交换通道用于混合通道的温度控制，以防止不希望的前体的冷凝和反应。

公开(公告)号：US07585769B2

公开(公告)日：2009-09-08

申请号：US11429022

申请日：2006-05-05

申请人： David Bour ,  Jacob W. Smith ,  Sandeep Nijhawan ,  Lori D. Washington ,  David Eaglesham

发明人： David Bour ,  Jacob W. Smith ,  Sandeep Nijhawan ,  Lori D. Washington ,  David Eaglesham

IPC分类号： H01L21/44

CPC分类号： C30B25/02 ,  C23C16/303 ,  C23C16/4401 ,  C30B25/165 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

摘要： A method of suppressing parasitic particle formation in a metal organic chemical vapor deposition process is described. The method may include providing a substrate to a reaction chamber, and introducing an organometallic precursor, a particle suppression compound and at least a second precursor to the reaction chamber. The second precursor reacts with the organometallic precursor to form a nucleation layer on the substrate. Also, a method of suppressing parasitic particle formation during formation of a III-V nitride layer is described. The method includes introducing a group III metal containing precursor to a reaction chamber. The group III metal precursor may include a halogen. A hydrogen halide gas and a nitrogen containing gas are also introduced to the reaction chamber. The nitrogen containing gas reacts with the group III metal precursor to form the III-V nitride layer on the substrate.

摘要翻译： 描述了抑制金属有机化学气相沉积工艺中的寄生颗粒形成的方法。 该方法可以包括向反应室提供底物，并将有机金属前体，颗粒抑制化合物和至少第二前体引入反应室。 第二前驱体与有机金属前驱体反应以在基底上形成成核层。 另外，描述了在形成III-V族氮化物层期间抑制寄生粒子形成的方法。 该方法包括将含III族金属的前体引入反应室。 III族金属前体可以包括卤素。 卤化氢气体和含氮气体也被引入反应室。 含氮气体与III族金属前体反应以在衬底上形成III-V族氮化物层。

公开(公告)号：US20120024388A1

公开(公告)日：2012-02-02

申请号：US13181431

申请日：2011-07-12

申请人： Brian H. Burrows ,  Alexander Tam ,  Ronald Stevens ,  Kenric T. Choi ,  James D. Felsch ,  Jacob Grayson ,  Sumedh Acharya ,  Sandeep Nijhawan ,  Lori D. Washington ,  Nyi O. Myo

发明人： Brian H. Burrows ,  Alexander Tam ,  Ronald Stevens ,  Kenric T. Choi ,  James D. Felsch ,  Jacob Grayson ,  Sumedh Acharya ,  Sandeep Nijhawan ,  Lori D. Washington ,  Nyi O. Myo

IPC分类号： F16L37/56

CPC分类号： C23C16/45565 ,  C23C16/45514 ,  C23C16/45519 ,  C23C16/45574 ,  C23C16/45578 ,  C30B25/14 ,  C30B29/403 ,  Y10T137/0318 ,  Y10T137/87153

摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.

摘要翻译： 提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。 在一个实施例中，使用金属有机化学气相沉积（MOCVD）工艺在多个基板上沉积III族氮化物膜。 将III族前体，例如三甲基镓，三甲基铝或三甲基铟，以及含氮前体，例如氨，被输送到多个直接通道，其分离前体气体。 将前体气体注入到混合通道中，在混合通道中气体被混合，然后进入含有底物的处理体积。 提供热交换通道用于混合通道的温度控制，以防止不希望的前体的冷凝和反应。

公开(公告)号：US20090194024A1

公开(公告)日：2009-08-06

申请号：US12023520

申请日：2008-01-31

申请人： Brian H. Burrows ,  Ronald Stevens ,  Jacob Grayson ,  Joshua J. Podesta ,  Sandeep Nijhawan ,  Lori D. Washington ,  Alexander Tam ,  Sumedh Acharya

发明人： Brian H. Burrows ,  Ronald Stevens ,  Jacob Grayson ,  Joshua J. Podesta ,  Sandeep Nijhawan ,  Lori D. Washington ,  Alexander Tam ,  Sumedh Acharya

IPC分类号： C23C16/52 ,  C23C16/46

CPC分类号： C23C16/452 ,  C23C16/481 ,  C23C16/52 ,  H01L21/67248 ,  H01L21/68764 ,  H01L21/68771

摘要： Embodiments of the present invention generally relate to methods and apparatus for chemical vapor deposition (CVD) on a substrate, and, in particular, to a process chamber and components for use in metal organic chemical vapor deposition. The apparatus comprises a chamber body defining a process volume. A showerhead in a first plane defines a top portion of the process volume. A carrier plate extends across the process volume in a second plane forming an upper process volume between the showerhead and the susceptor plate. A transparent material in a third plane defines a bottom portion of the process volume forming a lower process volume between the carrier plate and the transparent material. A plurality of lamps forms one or more zones located below the transparent material. The apparatus provides uniform precursor flow and mixing while maintaining a uniform temperature over larger substrates thus yielding a corresponding increase in throughput.

摘要翻译： 本发明的实施方案一般涉及用于基板上的化学气相沉积（CVD）的方法和装置，特别涉及用于金属有机化学气相沉积中的处理室和组件。 该装置包括限定处理量的室主体。 第一平面中的喷头定义了处理量的顶部。 载体板在第二平面中延伸过程体积，形成在喷头和基座板之间的上过程体积。 在第三平面中的透明材料限定了处理体积的底部，其在承载板和透明材料之间形成较低的处理体积。 多个灯形成位于透明材料下方的一个或多个区域。 该装置提供均匀的前体流动和混合，同时在较大的底物上保持均匀的温度，从而产生相应的生产量的增加。