公开(公告)号：US20090050929A1

公开(公告)日：2009-02-26

申请号：US12196859

申请日：2008-08-22

申请人： Miin-Jang CHEN ,  Wen-Ching Hsu ,  Suz-Hua Ho

发明人： Miin-Jang CHEN ,  Wen-Ching Hsu ,  Suz-Hua Ho

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L21/02458 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/12

摘要： The invention discloses a semiconductor substrate for epitaxy of a semiconductor optoelectronic device and the fabrication thereof. The semiconductor substrate according to the invention includes a substrate, and a nitride-based buffer layer. The buffer layer is formed by an atomic layer deposition process and/or a plasma-enhanced (or a plasma-assisted) atomic layer deposition process on an upper surface of the substrate. The nitride-based buffer layer assists the epitaxial growth of a semiconductor material layer of the semiconductor optoelectronic device.

摘要翻译： 本发明公开了半导体光电子器件的外延半导体衬底及其制造方法。 根据本发明的半导体衬底包括衬底和氮化物基缓冲层。 缓冲层通过原子层沉积工艺和/或等离子体增强（或等离子体辅助）原子层沉积工艺在衬底的上表面上形成。 氮化物基缓冲层有助于半导体光电子器件的半导体材料层的外延生长。

公开(公告)号：US07910388B2

公开(公告)日：2011-03-22

申请号：US12196911

申请日：2008-08-22

申请人： Miin-Jang Chen ,  Wen-Ching Hsu ,  Suz-Hua Ho

发明人： Miin-Jang Chen ,  Wen-Ching Hsu ,  Suz-Hua Ho

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L33/12

摘要： The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a buffer layer, a multi-layer structure, and an ohmic electrode structure. The buffer layer is selectively formed on an upper surface of the substrate such that the upper surface of the substrate is partially exposed. The multi-layer structure is formed to overlay the buffer layer and the exposed upper surface of the substrate. The multi-layer structure includes a light-emitting region. The buffer layer assists a bottom-most layer of the multi-layer structure in lateral and vertical epitaxial growth. The ohmic electrode structure is formed on the multi-layer structure.

摘要翻译： 本发明公开了一种半导体发光器件及其制造方法。 根据本发明的半导体发光器件包括衬底，缓冲层，多层结构和欧姆电极结构。 缓冲层选择性地形成在衬底的上表面上，使得衬底的上表面部分露出。 形成多层结构以覆盖缓冲层和暴露的衬底的上表面。 多层结构包括发光区域。 缓冲层在横向和垂直外延生长中辅助多层结构的最底层。 欧姆电极结构形成在多层结构上。

公开(公告)号：US08163651B2

公开(公告)日：2012-04-24

申请号：US12210004

申请日：2008-09-12

申请人： Miin-Jang Chen ,  Wen-Ching Hsu ,  Suz-Hua Ho

发明人： Miin-Jang Chen ,  Wen-Ching Hsu ,  Suz-Hua Ho

IPC分类号： H01L21/311

CPC分类号： H01L33/0079 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/0254

摘要： The invention discloses a method of fabricating a first substrate and a method of recycling a second substrate during fabrication of the first substrate. The second substrate is heterogeneous for the first substrate. First, the fabricating method according to the invention is to prepare the second substrate. Subsequently, the fabricating method is to deposit a buffer layer on the second substrate. Then, the fabricating method is to deposit a semiconductor material layer on the buffer layer. The buffer layer assists the epitaxial growth of the semiconductor material layer, and serves as a lift-off layer. Finally, with an etching solution, the fabricating method is to only etch the lift-off layer to debond the second substrate away from the semiconductor material layer, where the semiconductor material layer serves as the first substrate.

摘要翻译： 本发明公开了一种制造第一衬底的方法以及在制造第一衬底期间再循环第二衬底的方法。 第二衬底对于第一衬底是不均匀的。 首先，根据本发明的制造方法是制备第二衬底。 随后，制造方法是在第二衬底上沉积缓冲层。 然后，制造方法是将半导体材料层沉积在缓冲层上。 缓冲层有助于半导体材料层的外延生长，并且用作剥离层。 最后，利用蚀刻溶液，制造方法仅仅蚀刻剥离层，使第二衬底脱离半导体材料层，其中半导体材料层用作第一衬底。

公开(公告)号：US20090283139A1

公开(公告)日：2009-11-19

申请号：US12465087

申请日：2009-05-13

申请人： Miin-Jang CHEN ,  Wen-Ching Hsu ,  Suz-Hua Ho

发明人： Miin-Jang CHEN ,  Wen-Ching Hsu ,  Suz-Hua Ho

IPC分类号： H01L31/04 ,  H01L31/0216

CPC分类号： H01L31/072 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31616 ,  H01L31/0725 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/548

摘要： The invention discloses a semiconductor structure combination for a thin-film solar cell and a manufacture thereof. The semiconductor structure combination according to the invention includes a substrate, a multi-layer structure, and a passivation layer. The substrate has an upper surface. The multi-layer structure is deposited on the upper surface of the substrate and includes a p-n junction, a p-i-n junction, an n-i-p junction, a tandem junction or a multi-junction. The passivation layer is deposited by an atomic layer deposition process and/or a plasma-enhanced (or a plasma-assisted) atomic layer deposition process on a top-most layer of the multi-layer structure.

摘要翻译： 本发明公开了一种用于薄膜太阳能电池的半导体结构组合及其制造。 根据本发明的半导体结构组合包括衬底，多层结构和钝化层。 基板具有上表面。 多层结构沉积在衬底的上表面上并且包括p-n结，p-i-n结，n-i-p结，串联结或多结。 钝化层通过原子层沉积工艺和/或等离子体增强（或等离子体辅助）原子层沉积工艺沉积在多层结构的最顶层上。

公开(公告)号：US20090090931A1

公开(公告)日：2009-04-09

申请号：US12244583

申请日：2008-10-02

申请人： Miin-Jang CHEN ,  Wen-Ching Hsu ,  Suz-Hua Ho

发明人： Miin-Jang CHEN ,  Wen-Ching Hsu ,  Suz-Hua Ho

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L33/32 ,  H01L21/0237 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0254 ,  H01L33/02 ,  H01L33/12

摘要： The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a buffer layer, a corrosion-resistant film, a multi-layer structure, and an ohmic electrode structure. The buffer layer is grown on an upper surface of the substrate. The corrosion-resistant film is deposited to overlay the buffer layer The multi-layer structure is grown on the corrosion-resistant film and includes a light-emitting region. The buffer layer assists the epitaxial growth of a bottom-most layer of the multi-layer structure. The corrosion-resistant film prevents the buffer layer from being corroded by a gas during the epitaxial growth of the bottom-most layer. The ohmic electrode structure is deposited on the multi-layer structure.

摘要翻译： 本发明公开了一种半导体发光器件及其制造方法。 根据本发明的半导体发光器件包括衬底，缓冲层，耐腐蚀膜，多层结构和欧姆电极结构。 缓冲层在衬底的上表面上生长。 沉积耐腐蚀膜以覆盖缓冲层。多层结构生长在耐腐蚀膜上并且包括发光区域。 缓冲层有助于多层结构的最底层的外延生长。 耐腐蚀膜防止在最底层的外延生长期间缓冲层被气体腐蚀。 欧姆电极结构沉积在多层结构上。

公开(公告)号：US20090075481A1

公开(公告)日：2009-03-19

申请号：US12210004

申请日：2008-09-12

申请人： Miin-Jang Chen ,  Wen-Ching Hsu ,  Suz-Hua Ho

发明人： Miin-Jang Chen ,  Wen-Ching Hsu ,  Suz-Hua Ho

IPC分类号： H01L21/311

CPC分类号： H01L33/0079 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/0254

摘要： The invention discloses a method of fabricating a first substrate and a method of recycling a second substrate during fabrication of the first substrate. The second substrate is heterogeneous for the first substrate. First, the fabricating method according to the invention is to prepare the second substrate. Subsequently, the fabricating method is to deposit a buffer layer on the second substrate. Then, the fabricating method is to deposit a semiconductor material layer on the buffer layer. The buffer layer assists the epitaxial growth of the semiconductor material layer, and serves as a lift-off layer. Finally, with an etching solution, the fabricating method is to only etch the lift-off layer to debond the second substrate away from the semiconductor material layer, where the semiconductor material layer serves as the first substrate.

摘要翻译： 本发明公开了一种制造第一衬底的方法以及在制造第一衬底期间再循环第二衬底的方法。 第二衬底对于第一衬底是不均匀的。 首先，根据本发明的制造方法是制备第二衬底。 随后，制造方法是在第二衬底上沉积缓冲层。 然后，制造方法是将半导体材料层沉积在缓冲层上。 缓冲层有助于半导体材料层的外延生长，并且用作剥离层。 最后，利用蚀刻溶液，制造方法仅仅蚀刻剥离层，使第二衬底脱离半导体材料层，其中半导体材料层用作第一衬底。

公开(公告)号：US20090068780A1

公开(公告)日：2009-03-12

申请号：US12208772

申请日：2008-09-11

申请人： Miin-Jang Chen ,  Wen-Ching Hsu ,  Suz-Hua Ho

发明人： Miin-Jang Chen ,  Wen-Ching Hsu ,  Suz-Hua Ho

IPC分类号： H01L33/00

CPC分类号： H01L33/0079

摘要： The invention discloses a method of fabricating a semiconductor optoelectronic device. First, a substrate is prepared. Subsequently, a buffer layer is deposited on the substrate. Then, a multi-layer structure is deposited on the buffer layer, wherein the multi-layer structure includes an active region. The buffer layer assists the epitaxial growth of the bottom-most layer of the multi-layer structure, and the buffer layer also serves as a lift-off layer. Finally, with an etching solution, only the lift-off layer is etched to debond the substrate away from the multi-layer structure, wherein the multi-layer structure serves as the semiconductor optoelectronic device.

摘要翻译： 本发明公开了一种制造半导体光电器件的方法。 首先，准备基板。 随后，在衬底上沉积缓冲层。 然后，多层结构沉积在缓冲层上，其中多层结构包括有源区。 缓冲层有助于多层结构的最底层的外延生长，并且缓冲层也用作剥离层。 最后，使用蚀刻溶液，仅剥离剥离层以使基板脱离多层结构，其中多层结构用作半导体光电子器件。

公开(公告)号：US09109301B2

公开(公告)日：2015-08-18

申请号：US12637403

申请日：2009-12-14

申请人： Chung-Wen Lan ,  Kimsam Hsieh ,  Wen-Huai Yu ,  Bruce Hsu ,  Ya-Lu Tsai ,  Wen-Ching Hsu ,  Suz-Hua Ho

发明人： Chung-Wen Lan ,  Kimsam Hsieh ,  Wen-Huai Yu ,  Bruce Hsu ,  Ya-Lu Tsai ,  Wen-Ching Hsu ,  Suz-Hua Ho

IPC分类号： C30B11/02 ,  C30B11/14 ,  C30B28/06 ,  C30B29/06

CPC分类号： C30B28/06 ,  C30B29/06

摘要： In a crystalline silicon formation apparatus, a quick cooling method is applied to the bottom of a crucible to control a growth orientation of a polycrystalline silicon grain, such that the crystal grain forms twin boundary, and the twin boundary is a symmetric grain boundary, and the crystal grain is solidified and grown upward in unidirection to form a complete polycrystalline silicon, such that defects or impurities will not form in the polycrystalline silicon easily.

摘要翻译： 在结晶硅形成装置中，将快速冷却方法施加到坩埚的底部，以控制多晶硅晶粒的生长取向，使得晶粒形成双边界，并且双边界是对称晶界，并且 晶粒被固化并单向向上生长以形成完整的多晶硅，使得难以在多晶硅中形成缺陷或杂质。

公开(公告)号：US20120015143A1

公开(公告)日：2012-01-19

申请号：US13067710

申请日：2011-06-22

申请人： Jiunn-Yih Chyan ,  Jer-Liang Yeh ,  Wen-Ching Hsu ,  Suz-Hua Ho

发明人： Jiunn-Yih Chyan ,  Jer-Liang Yeh ,  Wen-Ching Hsu ,  Suz-Hua Ho

IPC分类号： B32B3/00 ,  C23F1/00 ,  H01L21/467 ,  H01L21/308 ,  B82Y40/00

CPC分类号： C30B29/60 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02521 ,  H01L21/02658 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3086 ,  Y10T428/24355

摘要： The invention provides an epitaxial substrate and fabrication thereof. The epitaxial substrate according to the invention includes a crystalline substrate. In particular, the crystalline substrate has an epitaxial surface which is nano-rugged and non-patterned. The epitaxial substrate according to the invention thereon benefits a compound semiconductor material in growth of epitaxy films with excellent quality. Moreover, the fabrication of the epitaxial substrate according to the invention has advantages of low cost and rapid production.

摘要翻译： 本发明提供一种外延衬底及其制造。 根据本发明的外延衬底包括晶体衬底。 特别地，晶体衬底具有纳米凹凸和非图案化的外延表面。 根据本发明的外延衬底有益于化合物半导体材料在外延薄膜生长中的优良品质。 此外，根据本发明的外延衬底的制造具有成本低且生产快速的优点。

公开(公告)号：US20120199935A1

公开(公告)日：2012-08-09

申请号：US13305066

申请日：2011-11-28

申请人： Miin-Jang Chen ,  Hsin-Jui Chen ,  Wen-Ching Hsu

发明人： Miin-Jang Chen ,  Hsin-Jui Chen ,  Wen-Ching Hsu

IPC分类号： H01L31/102 ,  H01L31/18 ,  B82Y30/00

CPC分类号： H01L31/02161 ,  H01L31/02167 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

摘要： The invention discloses an optoelectronic device and method of fabricating the same. The optoelectronic device according to the invention includes a semiconductor structure combination, a first surface passivation layer formed on an upper surface of the semiconductor structure combination, and a second surface passivation layer formed on the first surface passivation layer. The semiconductor structure combination includes at least one P-N junction. In particular, the interfacial state density of the first surface passivation layer is lower than that of the second surface passivation layer, and the fixed oxide charge density of the second surface passivation layer is higher than that of the first surface passivation layer.

摘要翻译： 本发明公开了一种光电器件及其制造方法。 根据本发明的光电子器件包括半导体结构组合，形成在半导体结构组合的上表面上的第一表面钝化层和形成在第一表面钝化层上的第二表面钝化层。 半导体结构组合包括至少一个P-N结。 特别地，第一表面钝化层的界面状态密度低于第二表面钝化层的界面状态密度，并且第二表面钝化层的固定氧化物电荷密度高于第一表面钝化层的固定氧化物电荷密度。