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    Radiation-emitting semiconductor device and fabric
    5.
    发明授权
    Radiation-emitting semiconductor device and fabric 有权

    公开(公告)号：US11296265B2

    公开(公告)日：2022-04-05

    申请号：US16606538

    申请日：2018-04-18

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Martin Rudolf Behringer ,  Alexander F. Pfeuffer ,  Andreas Plößl ,  Georg Bogner ,  Berthold Hahn ,  Frank Singer

    IPC: H01L33/62 ,  H01L25/075 ,  H01L25/16 ,  A41D13/01 ,  A62B17/00

    Abstract: A radiation-emitting semiconductor device and a fabric are disclosed. In an embodiment, a radiation-emitting semiconductor device includes a semiconductor layer sequence having an active region configured to generate radiation and at least one carrier on which the semiconductor layer sequence is arranged, wherein the at least one carrier has at least one anchoring structure on a carrier underside facing away from the semiconductor layer sequence, wherein the at least one anchoring structure includes electrical contact points for making electrical contact with the semiconductor layer sequence, and wherein the at least one anchoring structure is configured to receive at least one thread for fastening the semiconductor device to a fabric and for electrical contacting the at least one thread.

    Component with end-side mounted light emitting semiconductor chip
    6.
    发明授权
    Component with end-side mounted light emitting semiconductor chip 有权

    公开(公告)号：US11107945B2

    公开(公告)日：2021-08-31

    申请号：US15820930

    申请日：2017-11-22

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Alexander Linkov ,  Frank Singer ,  Matthias Bruckschloegl ,  Siegfried Herrmann ,  Jürgen Moosburger ,  Thomas Schwarz

    IPC: H01L33/00 ,  H01L25/075 ,  H01L33/48 ,  H01L33/38 ,  H01L33/62

    Abstract: A component includes a light emitting semiconductor chip, wherein the semiconductor chip includes a layer arrangement including a plurality of layers, the p-conducting layer and the n-conducting layer adjoin one another in an active zone, a first electrical contact is configured on the p-conducting side of the layer arrangement at a first side of the semiconductor chip, a second electrical contact is configured on the n-conducting side of the layer arrangement at a second side of the semiconductor chip, the second side being situated opposite the first side of the semiconductor chip, the first side of the semiconductor chip transitions into the second side via an end side, the semiconductor chip is secured by the end side on a substrate, the substrate includes a first and second further electrical contact, and the further electrical contacts electrically conductively connect to the electrical contacts of the semiconductor chip.

    Detection Assembly and Method for Producing Detection Assemblies
    7.
    发明申请
    Detection Assembly and Method for Producing Detection Assemblies 审中-公开

    公开(公告)号：US20200018692A1

    公开(公告)日：2020-01-16

    申请号：US16323504

    申请日：2017-08-03

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Frank Singer ,  Matthias Sperl

    IPC: G01N21/3504

    Abstract: A detection assembly and a method for producing a detection assemblies are disclosed. In an embodiment a detection arrangement includes an emitter configured to generate radiation having a peak wavelength in an infrared spectral range, a detector configured to receive the radiation, a mounting surface comprising at least a first contact surface and a second contact surface for external electrical connection of the detection arrangement, a form body adjoining the emitter and the detector at least in places and deflection optics, on which the radiation impinges during operation of the detection arrangement so that an optical path is formed between the emitter and the detector by the deflection optics, wherein the deflection optics include a scattering body into which the radiation enters during the operation through a surface of the scattering body facing the emitter.

    Semiconductor component having a small structural height
    8.
    发明授权
    Semiconductor component having a small structural height 有权

    公开(公告)号：US10411168B2

    公开(公告)日：2019-09-10

    申请号：US14779818

    申请日：2014-03-24

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Joachim Reill ,  Frank Singer ,  Norwin von Malm ,  Matthias Sabathil

    IPC: H01L33/48 ,  H01L33/54 ,  H01L33/62 ,  H01L33/00 ,  H01L33/60 ,  H01L23/498

    Abstract: An optoelectronic semiconductor component includes a semiconductor chip having a semiconductor layer sequence including an active region that generates radiation; a radiation exit surface running parallel to the active region; a mounting side surface that fixes the semiconductor component and runs obliquely or perpendicularly to the radiation exit surface and at which at least one contact area for external electrical contacting is accessible; a molded body molded onto the semiconductor chip in places and forming the mounting side surface at least in regions; and a contact track arranged on the molded body and electrically conductively connecting the semiconductor chip to the at least one contact area.

    Optical Assembly and Display Device
    9.
    发明申请
    Optical Assembly and Display Device 审中-公开

    公开(公告)号：US20190157339A1

    公开(公告)日：2019-05-23

    申请号：US16098283

    申请日：2017-05-11

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Peter Brick ,  Matthias Sabathil ,  Frank Singer ,  Thomas Schwarz

    IPC: H01L27/15 ,  H01L25/075 ,  H01L33/58 ,  H01L33/62

    Abstract: An optical assembly and a display device are disclosed. In an embodiment an optical assembly includes a common carrier, a plurality of first chip groups, each first chip group comprising at least two similar luminescence diode chips, a plurality of second chip groups, each second chip group comprising at least two similar luminescence diode chips, wherein the first and second chip groups are arranged planar along a regular grid of first unit cells on a main surface of the common carrier and an optical element arranged downstream of the first and second chip groups with respect to a main radiation direction, wherein the luminescence diode chips of the different chip groups are configured to emit electromagnetic radiation of different wavelength characteristics.

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