公开(公告)号：US20220393058A1

公开(公告)日：2022-12-08

申请号：US17774104

申请日：2020-11-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Michael Binder ,  Andreas Rückerl ,  Roland Zeisel ,  Tobias Meyer ,  Kerstin Neveling ,  Christine Rafael ,  Moses Richter ,  Rainer Hartmann ,  Clemens Vierheilig

IPC: H01L33/00 ,  H01L33/44

Abstract: In an embodiment, an optoelectronic semiconductor component includes a semiconductor layer sequence with a doped first layer, a doped second layer, an active zone configured to generate radiation by electroluminescence between the first layer and the second layer, and a side surface extending transversely to the active zone and delimiting the semiconductor layer sequence in a lateral direction, two electrodes for electrical contact between the first and second layers and a cover layer located on the side surface in a region of the first layer, wherein the cover layer is in direct contact with the first layer, wherein a material of the cover layer alone and its direct contact with the first layer are configured to cause a formation of a depletion zone in the first layer, wherein the depletion zone comprises a lower concentration of majority charge carriers compared to a rest of the first layer, wherein the cover layer comprises a metal or a metal compound, and wherein the cover layer forms a Schottky contact with the first layer.

公开(公告)号：US09923130B2

公开(公告)日：2018-03-20

申请号：US14773805

申请日：2014-03-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Lorenzo Zini ,  Tobias Meyer

IPC: H01L33/58 ,  H01L33/44 ,  H01L33/32 ,  H01L33/50 ,  H01L33/62 ,  H01L33/46 ,  H01L33/60

CPC classification number: H01L33/58 ,  H01L33/32 ,  H01L33/44 ,  H01L33/46 ,  H01L33/505 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: An optoelectronic semiconductor component has at least one semiconductor chip for emitting electromagnetic radiation. The semiconductor chip has at least one side surface and wherein a part of the electromagnetic radiation exits through the side surface during operation of the semiconductor chip. The semiconductor component additionally has at least one deflecting element that is formed to be transmissive to radiation. The deflecting element and the semiconductor chip are arranged one alongside another. The deflecting element is arranged at the side surface of the semiconductor chip. The deflecting element has a material, the index of refraction of which is greater than an average index of refraction of a semiconductor material of the semiconductor chip.

公开(公告)号：US20180062031A1

公开(公告)日：2018-03-01

申请号：US15557600

申请日：2016-03-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Asako Hirai ,  Tobias Meyer ,  Philipp Drechsel ,  Peter Stauß ,  Anna Nirschl ,  Alvaro Gomez-Iglesias ,  Tobias Niebling ,  Bastian Galler

IPC: H01L33/06 ,  H01L31/0352 ,  H01L29/15

CPC classification number: H01L31/0352 ,  H01L29/151 ,  H01L29/152 ,  H01L31/035236 ,  H01L33/06

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure comprises multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction, wherein the multi-quantum-well structure has at least one emission region and multiple transport regions which are arranged sequentially in an alternating manner in a direction perpendicular to the growth direction, wherein at least one of the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission regions, and wherein the quantum-well layers in the transport regions and in the emission regions are oriented perpendicularly to the growth direction with exception of a junction region between adjacent transport regions and emission regions.

公开(公告)号：US20170338217A1

公开(公告)日：2017-11-23

申请号：US15671772

申请日：2017-08-08

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Rainer Butendeich ,  Alexander Walter ,  Matthias Peter ,  Tobias Meyer ,  Tetsuya Taki ,  Hubert Maiwald

IPC: H01L27/02 ,  H01L31/0236 ,  H01L33/32 ,  H01L27/15 ,  H01L33/02 ,  H01L31/0352 ,  H01L31/0304 ,  H01L33/06 ,  H01L33/08 ,  H01L33/24

CPC classification number: H01L27/0248 ,  H01L27/15 ,  H01L31/02363 ,  H01L31/03044 ,  H01L31/035236 ,  H01L33/02 ,  H01L33/06 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a first semiconductor layer sequence having a plurality of microdiodes, and a second semiconductor layer sequence having an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.

公开(公告)号：US09553231B2

公开(公告)日：2017-01-24

申请号：US14769831

申请日：2014-04-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Tobias Meyer ,  Jürgen Off

IPC: H01L33/00 ,  H01L33/06 ,  H01S5/10 ,  H01S5/343 ,  H01S5/34 ,  H01L33/32 ,  H05B33/08 ,  H01L33/08 ,  H01S5/30

CPC classification number: H01L33/06 ,  H01L33/08 ,  H01L33/32 ,  H01S5/1096 ,  H01S5/3086 ,  H01S5/3408 ,  H01S5/34333 ,  H05B33/0803

Abstract: The semiconductor layer sequence includes an n-conductive layer, a p-conductive layer and an active zone located therebetween. The active zone comprises N quantum wells with N≧2. At a first working point (W1) at a first current density, the quantum wells have a first emission wavelength and, at a second working point (W2) at a second current density, a second emission wavelength. At least two of the first emission wavelengths differ from one another and at least some of the second emission wavelengths differ from the first emission wavelengths. The first current density is smaller than the second current density and the current densities differ from one another at least by a factor of 2.

Abstract translation: 半导体层序列包括n导电层，p导电层和位于它们之间的有源区。 有源区包括N≥2的N个量子阱。 在第一电流密度的第一工作点（W1）处，量子阱具有第一发射波长，并且在第二工作点（W2）处具有第二电流密度，具有第二发射波长。 第一发射波长中的至少两个彼此不同，并且至少一些第二发射波长与第一发射波长不同。 第一电流密度小于第二电流密度，并且电流密度彼此至少彼此不同。

公开(公告)号：US20160020201A1

公开(公告)日：2016-01-21

申请号：US14686364

申请日：2015-04-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Rainer Butendeich ,  Alexander Walter ,  Matthias Peter ,  Tobias Meyer ,  Tetsuya Taki ,  Hubert Maiwald

IPC: H01L27/02 ,  H01L33/24 ,  H01L31/0304 ,  H01L33/08 ,  H01L31/0352 ,  H01L31/0236 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L27/0248 ,  H01L27/15 ,  H01L31/02363 ,  H01L31/03044 ,  H01L31/035236 ,  H01L33/02 ,  H01L33/06 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.

Abstract translation: 光电子半导体芯片具有包括多个微二极管的第一半导体层序列和包含有源区的第二半导体层序列。 第一半导体层序列和第二半导体层序列基于氮化物化合物半导体材料，第一半导体层序列在生长方向上位于第一半导体层序列之前，并且微二极管形成用于有源区的ESD保护。

公开(公告)号：US11309459B2

公开(公告)日：2022-04-19

申请号：US16495144

申请日：2018-04-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Clemens Vierheilig ,  Philipp Kreuter ,  Rainer Hartmann ,  Michael Binder ,  Tobias Meyer

IPC: H01L33/42 ,  H01L33/30 ,  H01L33/00

Abstract: An optoelectronic semiconductor device includes a semiconductor layer sequence including an active zone that generates radiation by electroluminescence; a p-electrode and an n-electrode; an electrically insulating passivation layer on side surfaces of the semiconductor layer sequence; and an edge field generating device on the side surfaces on a side of the passivation layer facing away from the semiconductor layer sequence at the active zone, wherein the edge field generating device is configured to generate an electric field at least temporarily in an edge region of the active zone so that, during operation, a current flow through the semiconductor layer sequence is controllable in the edge region.

公开(公告)号：US10475951B2

公开(公告)日：2019-11-12

申请号：US14780982

申请日：2014-03-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Löffler ,  Tobias Meyer ,  Adam Bauer ,  Christian Leirer

IPC: H01L33/00 ,  H01L33/02 ,  H01L33/24 ,  H01L21/02 ,  H01L33/06 ,  H01L33/30 ,  H01L25/16 ,  H01L33/32

Abstract: A method for producing an optoelectronic semiconductor chip is disclosed. A substrate is provided and a first layer is grown. An etching process is carrying out to initiate V-defects. A second layer is grown and a quantum film structure is grown. An optoelectronic semiconductor chip is also disclosed. The method can be used to produce the optoelectronic semiconductor chip.

公开(公告)号：US09728674B2

公开(公告)日：2017-08-08

申请号：US15285447

申请日：2016-10-04

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christian Leirer ,  Tobias Meyer ,  Matthias Peter ,  Juergen Off ,  Joachim Hertkorn ,  Andreas Loeffler ,  Alexander Walter ,  Dario Schiavon

IPC: H01L29/06 ,  H01L33/06 ,  H01L33/00 ,  H01L33/24 ,  H01L33/32 ,  H01L33/58

CPC classification number: H01L33/06 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/14 ,  H01L33/24 ,  H01L33/32 ,  H01L33/58

Abstract: The invention concerns an optoelectronic component comprising a layer structure with a light-active layer. In a first lateral region the light-active layer has a higher density of V-defects than in a second lateral region.

公开(公告)号：US09620673B2

公开(公告)日：2017-04-11

申请号：US14782911

申请日：2014-03-24

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Tobias Meyer ,  Christian Leirer ,  Lorenzo Zini ,  Jürgen Off ,  Andreas Löffler ,  Adam Bauer

IPC: H01L33/02 ,  H01L33/00 ,  H01L33/14 ,  H01L27/15 ,  H01L33/38

CPC classification number: H01L33/025 ,  H01L27/15 ,  H01L33/0008 ,  H01L33/005 ,  H01L33/14 ,  H01L33/382

Abstract: An optoelectronic device includes a carrier on which a semiconductor layer sequence is applied, said semiconductor layer sequence including an n-doped semiconductor layer and a p-doped semiconductor layer such that a p-n junction is formed which includes an active zone that generates electromagnetic radiation, wherein at least one of the n-doped semiconductor layer and the p-doped semiconductor layer includes a doped region having a first doping concentration greater than a second doping concentration in a surrounding area of the region in the semiconductor layer including the region.