公开(公告)号：US12243881B2

公开(公告)日：2025-03-04

申请号：US18239928

申请日：2023-08-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Masashi Tsubuku ,  Kosei Noda

IPC: H01L27/12 ,  G09G3/20 ,  G09G3/3233 ,  G09G3/3291 ,  G09G3/36 ,  G11C19/18 ,  G11C19/28 ,  H01L29/786 ,  H03K17/16 ,  H03K19/003 ,  H03K19/096

Abstract: To reduce a leakage current of a transistor so that malfunction of a logic circuit can be suppressed. The logic circuit includes a transistor which includes an oxide semiconductor layer having a function of a channel formation layer and in which an off current is 1×10−13 A or less per micrometer in channel width. A first signal, a second signal, and a third signal that is a clock signal are input as input signals. A fourth signal and a fifth signal whose voltage states are set in accordance with the first to third signals which have been input are output as output signals.

公开(公告)号：US12067934B2

公开(公告)日：2024-08-20

申请号：US17411401

申请日：2021-08-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake

IPC: G09G3/3208 ,  G09G3/20 ,  G09G3/3233 ,  H01L27/12 ,  H01L29/786 ,  H10K59/121 ,  H10K59/131

CPC classification number: G09G3/3208 ,  G09G3/2003 ,  G09G3/3233 ,  H01L27/1225 ,  H01L29/78609 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696 ,  H10K59/1213 ,  H10K59/131 ,  G09G2330/021

Abstract: Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.

公开(公告)号：US12021530B2

公开(公告)日：2024-06-25

申请号：US18136924

申请日：2023-04-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama

IPC: G11C5/06 ,  G11C5/14 ,  G11C8/04 ,  H01L21/8258 ,  H01L27/06 ,  H01L27/088 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H03K3/012 ,  H03K3/037 ,  H03K19/00 ,  H01L21/8234

CPC classification number: H03K3/012 ,  G11C5/147 ,  G11C8/04 ,  H01L21/8258 ,  H01L27/0629 ,  H01L27/088 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/7869 ,  H01L29/78693 ,  H03K3/0372 ,  H03K3/0375 ,  H03K19/0008 ,  H01L21/823412

Abstract: Provided is a semiconductor device including a sequential circuit including a first transistor and a capacitor. The first transistor includes a semiconductor layer including indium, zinc, and oxygen to form a channel formation region. A node electrically connected to a source or a drain of the first transistor and a capacitor becomes a floating state when the first transistor turns off, so that a potential of the node can be maintained for a long period. A power-gating control circuit may be provided to control supply of power supply potential to the sequential circuit. The potential of the node still can be maintained while supply of the power supply potential is stopped.

公开(公告)号：US11984093B2

公开(公告)日：2024-05-14

申请号：US18090587

申请日：2022-12-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama ,  Atsushi Umezaki

IPC: G09G3/36 ,  G11C19/00 ,  H01L27/02 ,  H01L27/12 ,  H01L29/786 ,  H03K17/687 ,  H03K19/00 ,  H03K19/0185

CPC classification number: G09G3/3677 ,  G09G3/3674 ,  G11C19/00 ,  H01L27/0207 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/7869 ,  H03K17/687 ,  H03K19/0013 ,  H03K19/018557 ,  H03K19/018571 ,  G09G2310/0251 ,  G09G2310/0286 ,  G09G2310/0289 ,  G09G2310/08 ,  G09G2330/021

Abstract: The amplitude voltage of a signal input to a level shifter can be increased and then output by the level shifter circuit. Specifically, the amplitude voltage of the signal input to the level shifter can be increased to be output. This decreases the amplitude voltage of a circuit (a shift register circuit, a decoder circuit, or the like) which outputs the signal input to the level shifter. Consequently, power consumption of the circuit can be reduced. Alternatively, a voltage applied to a transistor included in the circuit can be reduced. This can suppress degradation of the transistor or damage to the transistor.

公开(公告)号：US11825665B2

公开(公告)日：2023-11-21

申请号：US17949436

申请日：2022-09-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato

IPC: H01L29/78 ,  H10B99/00 ,  H01L27/105 ,  H01L27/12 ,  H10B12/00 ,  H10B41/20 ,  H10B41/70 ,  H01L29/24 ,  H01L29/786 ,  G11C13/00 ,  H01L49/02 ,  H10B10/00

CPC classification number: H10B99/00 ,  H01L27/105 ,  H01L27/124 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/78696 ,  H10B12/00 ,  H10B41/20 ,  H10B41/70 ,  G11C13/003 ,  G11C13/0007 ,  G11C2213/79 ,  H01L28/40 ,  H10B10/00

Abstract: An object of one embodiment of the present invention is to provide a semiconductor device with a novel structure in which stored data can be stored even when power is not supplied in a data storing time and there is no limitation on the number of times of writing. The semiconductor device includes a first transistor which includes a first channel formation region using a semiconductor material other than an oxide semiconductor, a second transistor which includes a second channel formation region using an oxide semiconductor material, and a capacitor. One of a second source electrode and a second drain electrode of the second transistor is electrically connected to one electrode of the capacitor.

公开(公告)号：US11677384B2

公开(公告)日：2023-06-13

申请号：US17359940

申请日：2021-06-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama

IPC: G11C8/04 ,  H03K3/012 ,  H03K3/037 ,  H01L21/8258 ,  H01L27/088 ,  H01L29/786 ,  H01L27/12 ,  H03K19/00 ,  G11C5/14 ,  H01L27/06 ,  H01L29/04 ,  H01L21/8234

CPC classification number: H03K3/012 ,  G11C5/147 ,  G11C8/04 ,  H01L21/8258 ,  H01L27/0629 ,  H01L27/088 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/7869 ,  H01L29/78693 ,  H03K3/0372 ,  H03K3/0375 ,  H03K19/0008 ,  H01L21/823412

Abstract: Provided is a semiconductor device including a sequential circuit including a first transistor and a capacitor. The first transistor includes a semiconductor layer including indium, zinc, and oxygen to form a channel formation region. A node electrically connected to a source or a drain of the first transistor and a capacitor becomes a floating state when the first transistor turns off, so that a potential of the node can be maintained for a long period. A power-gating control circuit may be provided to control supply of power supply potential to the sequential circuit. The potential of the node still can be maintained while supply of the power supply potential is stopped.

公开(公告)号：US11668988B2

公开(公告)日：2023-06-06

申请号：US15342410

申请日：2016-11-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama ,  Shunpei Yamazaki

IPC: G02F1/1368 ,  G02F1/1362 ,  G02F1/1345 ,  G02F1/1343 ,  G02F1/137 ,  G02F1/1333 ,  G02F1/1337 ,  G02F1/133 ,  G02F1/1335 ,  G02F1/1339

CPC classification number: G02F1/1368 ,  G02F1/137 ,  G02F1/1362 ,  G02F1/13439 ,  G02F1/13454 ,  G02F1/134309 ,  G02F1/134336 ,  G02F1/1339 ,  G02F1/13306 ,  G02F1/13394 ,  G02F1/13793 ,  G02F1/133302 ,  G02F1/133345 ,  G02F1/133357 ,  G02F1/133388 ,  G02F1/133512 ,  G02F1/133742 ,  G02F1/133784 ,  G02F1/136286 ,  G02F2201/121 ,  G02F2201/123

Abstract: When a pixel portion and a driver circuit are formed over one substrate and a counter electrode is formed over an entire surface of a counter substrate, the driver circuit may be adversely affected by an optimized voltage of the counter electrode. A semiconductor device according to the present invention has a structure in which: a liquid crystal layer is provided between a pair of substrates; one of the substrates is provided with a pixel electrode and a driver circuit; the other of the substrates is a counter substrate which is provided with two counter electrode layers in different potentials; and one of the counter electrode layers overlaps with the pixel electrode with the liquid crystal layer therebetween and the other of the counter electrode layers overlaps with the driver circuit with the liquid crystal layer therebetween. An oxide semiconductor layer is used for the driver circuit.

公开(公告)号：US11456385B2

公开(公告)日：2022-09-27

申请号：US17172261

申请日：2021-02-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama

IPC: H01L29/786 ,  H01L29/45 ,  H01L29/66 ,  H01L29/04 ,  H01L29/24

Abstract: A semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode, and the drain electrode, and a gate electrode over the gate insulating layer. The source electrode and the drain electrode include an oxide region formed by oxidizing a side surface thereof. Note that the oxide region of the source electrode and the drain electrode is preferably formed by plasma treatment with a high frequency power of 300 MHz to 300 GHz and a mixed gas of oxygen and argon.

公开(公告)号：US11367793B2

公开(公告)日：2022-06-21

申请号：US17008745

申请日：2020-09-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga ,  Junpei Sugao ,  Hideki Uochi ,  Yasuo Nakamura

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/768 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49 ,  H01L21/02 ,  H01L21/324 ,  H01L29/24 ,  H01L29/423

Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.

公开(公告)号：US11322498B2

公开(公告)日：2022-05-03

申请号：US16944289

申请日：2020-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato

IPC: H01L27/105 ,  H01L27/12 ,  H01L29/24 ,  H01L29/16 ,  G11C11/405 ,  G11C16/04 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/118 ,  H01L27/115 ,  H01L29/786 ,  H01L21/822 ,  H01L27/06 ,  H01L27/108 ,  H01L29/78

Abstract: An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.