公开(公告)号：US20160111595A1

公开(公告)日：2016-04-21

申请号：US14731391

申请日：2015-06-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Hyun LEE ,  Min Hwan KIM ,  Eun Deok SIM ,  Ji Heon OH ,  Heon Ho LEE ,  Ho Chul LEE ,  Jae Sung HYUN

IPC: H01L33/12 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/06 ,  H01L33/08 ,  H01L33/32

Abstract: A semiconductor light emitting device may include: a first conductivity-type semiconductor layer; an active layer disposed on the first conductivity-type semiconductor layer and including a plurality of quantum barrier layers and a plurality of quantum well layers which are alternately stacked; and a second conductivity-type semiconductor layer disposed on the active layer. A quantum barrier layer closest to the second conductivity-type semiconductor layer, among the plurality of quantum barrier layers, may include a first undoped region and a first doped region disposed on the first undoped region and having a thickness greater than or equal to that of the first undoped region. Each of the first undoped region and the first doped region may include a plurality of first unit layers having different energy band gaps, and at least one hole accumulation region.

Abstract translation: 半导体发光器件可以包括：第一导电型半导体层; 设置在所述第一导电型半导体层上并且包括多个量子势垒层和交替层叠的多个量子阱层的有源层; 以及设置在有源层上的第二导电型半导体层。 在多个量子势垒层中最靠近第二导电类型半导体层的量子势垒层可以包括第一未掺杂区域和设置在第一未掺杂区域上的第一掺杂区域，并且具有大于或等于 第一个未掺杂的地区。 第一未掺杂区域和第一掺杂区域中的每一个可以包括具有不同能带隙的多个第一单元层和至少一个空穴积聚区域。

公开(公告)号：US20170271204A1

公开(公告)日：2017-09-21

申请号：US15405762

申请日：2017-01-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Wook HWANG ,  Jong Hyun LEE ,  Jae Seok YANG ,  In Wook OH ,  Hyun Jae LEE

IPC: H01L21/768 ,  G06F17/50

CPC classification number: H01L21/0337 ,  H01L21/76802 ,  H01L23/481

Abstract: A method for manufacturing a semiconductor device includes generating a layout including a first conductive pattern region and a second conductive pattern region. A first interlayer insulating film is formed on a substrate, the first interlayer insulating film including a first region corresponding to the first conductive pattern region, a second region corresponding to the second conductive pattern region, and a third region spaced apart from the first and second regions and disposed between the first and second regions. First, second and third lower metal wirings are formed to respectively fill the first, second and third recesses of the first interlayer insulating film. A second interlayer insulating film is formed on the first interlayer insulating film. A first dummy via hole is formed in the second interlayer insulating film to expose the third lower metal wiring. The third lower metal wiring is electrically isolated.

公开(公告)号：US20150263555A1

公开(公告)日：2015-09-17

申请号：US14705499

申请日：2015-05-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Hyun LEE

IPC: H02J7/00 ,  G06F13/38

CPC classification number: H02J7/0044 ,  G06F1/26 ,  G06F11/3485 ,  G06F13/382 ,  H02J3/008 ,  H02J7/0008 ,  H02J7/0027 ,  H02J7/0047 ,  H04M1/0274 ,  H04M1/72527

Abstract: A mobile terminal and an interface method thereof for connecting external devices, such as an adapter, a Universal Serial Bus (USB) cable, a docking station, an accessory, and the like, to the mobile terminal are provided. The mobile terminal includes a battery, a connector including a pin for data communication and first and second power pins for charging the battery, a memory for storing a reference voltage indicating a dedicated adapter of the battery, and a controller for receiving a voltage input from the first and second power pins, for recognizing an external device connected with the connector as the dedicated adapter when a voltage input from the pin for data communication is the reference voltage, and for charging the battery with power input to the first and second power pins.

Abstract translation: 提供了一种用于将诸如适配器，通用串行总线（USB）电缆，对接站，附件等的外部设备连接到移动终端的移动终端及其接口方法。 移动终端包括电池，包括用于数据通信的引脚和用于对电池充电的第一和第二电源引脚的连接器，用于存储指示电池的专用适配器的参考电压的存储器，以及用于接收来自电池的电压输入的控制器 所述第一和第二电源引脚用于当从所述用于数据通信的引脚的电压输入为参考电压时识别与所述连接器连接的外部设备作为所述专用适配器，并且用于对所述电池充电以对所述第一和第二电源引脚的电力输入进行充电 。

公开(公告)号：US20130098293A1

公开(公告)日：2013-04-25

申请号：US13655696

申请日：2012-10-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Hyun LEE ,  Hyun Seok RYU ,  Jung Hyun LEE ,  Ki Sung KIM ,  Suk Ho YOON ,  Young Sun KIM

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/45565 ,  C23C16/45578 ,  C23C16/4558 ,  C23C16/4583 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262

Abstract: A chemical vapor deposition apparatus can include a reaction chamber having a reaction space therein; a wafer boat disposed in the reaction space, the wafer boat arranged and structured to support a plurality of wafers; and a gas supplying part disposed in the reaction chamber to supply two or more reaction gases to the plurality of wafers. The gas supplying part can include a plurality of gas pipes disposed in the reaction chamber to supply the two or more reaction gases from outside to the reaction space; and a plurality of supplying pipes disposed around the wafer boat, wherein each of the supplying pipes is connected to two or more corresponding gas pipes, and wherein each supplying pipe is configured to supply the two or more reaction gases supplied by the two or more corresponding gas pipes to a corresponding one of the wafers.

Abstract translation: 化学气相沉积装置可以包括其中具有反应空间的反应室; 设置在所述反应空间中的晶片舟，所述晶片舟被布置和构造为支撑多个晶片; 以及设置在所述反应室中以将多个反应气体供应到所述多个晶片的气体供给部。 气体供给部可以包括设置在反应室中的多个气体管道，用于从外部向反应空间供给两种或更多种反应气体; 以及设置在所述晶片舟周围的多个供给管，其中，所述供给管中的每一个连接到两个以上对应的气体管，并且其中每个供给管被构造成供给由所述两个或更多个相应的 将气体管道连接到相应的一个晶片。

公开(公告)号：US20180182758A1

公开(公告)日：2018-06-28

申请号：US15902025

申请日：2018-02-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In Wook OH ,  Jae Seok YANG ,  Jong Hyun LEE ,  Hyun Jae LEE ,  Sung Wook HWANG

IPC: H01L27/088 ,  H01L27/02 ,  G06F17/50 ,  H01L23/528

CPC classification number: H01L27/0886 ,  G06F17/5072 ,  H01L23/528 ,  H01L27/0207

Abstract: A semiconductor device includes circuit active fin lines and circuit gate lines intersecting each other in a circuit active region, dummy active fin lines and dummy gate lines intersecting each other in a dummy active region, the active fin lines and the dummy active fin lines having same width and pitch, and the circuit gate lines and the dummy gate lines having same width and pitch, wherein at least some of the dummy active fin lines are aligned with and collinear with respective circuit active fin lines, and at least some of the dummy gate lines are aligned with and collinear with respective circuit gate lines.

公开(公告)号：US20150200332A1

公开(公告)日：2015-07-16

申请号：US14508784

申请日：2014-10-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Hyun LEE ,  Sang Heon HAN ,  Suk Ho YOON ,  Jae Sung HYUN

IPC: H01L33/14 ,  H01L33/60

CPC classification number: H01L33/04 ,  H01L29/15 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06 ,  H01L33/14 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/8592 ,  H01S5/20 ,  H01S5/34 ,  H01L2924/00014

Abstract: There is provided a semiconductor light emitting device. The device includes an n-type semiconductor layer, and a p-type semiconductor layer. The p-type semiconductor layer includes a plurality of first layers and second layers, each containing a p-type impurity and are alternately stacked. The impurity concentrations of the plurality of first layers increase in a direction away from the n-type semiconductor layer. An active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer.

Abstract translation: 提供了一种半导体发光器件。 该器件包括n型半导体层和p型半导体层。 p型半导体层包括多个第一层和第二层，每层包含p型杂质并且交替地层叠。 多个第一层的杂质浓度在远离n型半导体层的方向上增加。 在n型半导体层和p型半导体层之间设置有源层。

公开(公告)号：US20140235005A1

公开(公告)日：2014-08-21

申请号：US14106783

申请日：2013-12-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Hyun LEE ,  Ki Sung KIM ,  Bum Joon KIM ,  Tan Sakong ,  Suk Ho YOON ,  Jae Deok JEONG

IPC: H01L33/00 ,  H01L21/02

CPC classification number: H01L21/0254 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/0066

Abstract: A method of producing a p-type nitride semiconductor includes growing a first nitride semiconductor layer doped with a first concentration of a p-type impurity. The first nitride semiconductor layer is annealed to activate the p-type impurity. A second nitride semiconductor layer doped with a second concentration of a p-type impurity is grown on the first nitride semiconductor layer. The second concentration is higher than the first concentration.

Abstract translation: 制造p型氮化物半导体的方法包括生长掺杂有第一浓度的p型杂质的第一氮化物半导体层。 对第一氮化物半导体层进行退火以激活p型杂质。 在第一氮化物半导体层上生长掺杂有第二浓度的p型杂质的第二氮化物半导体层。 第二浓度高于第一浓度。

公开(公告)号：US20130168639A1

公开(公告)日：2013-07-04

申请号：US13733586

申请日：2013-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Hyun LEE ,  Sang Heon HAN ,  Jin Young LIM ,  Young Sun KIM

IPC: H01L33/06

CPC classification number: H01L33/06 ,  H01L33/14 ,  H01L33/32

Abstract: A nitride semiconductor light emitting device includes first and second type nitride semiconductor layers. An active layer is disposed between the first and second type nitride semiconductor layers. A current spreading layer is disposed between the second type nitride semiconductor layer and the active layer. The current spreading layer includes first nitride thin films and second nitride thin films which are alternately laminated. The first nitride thin films have band gaps larger than those of the second nitride thin films. A first plurality of first nitride thin films are positioned at outer first and second sides of the current spreading layer. The first plurality of first nitride thin films have a thickness greater than that of a second plurality of first nitride thin films positioned between the first plurality of first nitride thin films.

Abstract translation: 氮化物半导体发光器件包括第一和第二氮化物半导体层。 有源层设置在第一和第二氮化物半导体层之间。 电流扩散层设置在第二氮化物半导体层和有源层之间。 电流扩散层包括交替层叠的第一氮化物薄膜和第二氮化物薄膜。 第一氮化物薄膜具有比第二氮化物薄膜大的带隙。 第一多个第一氮化物薄膜位于电流扩展层的外部第一和第二侧。 第一多个第一氮化物薄膜的厚度大于位于第一多个第一氮化物薄膜之间的第二多个第一氮化物薄膜的厚度。

公开(公告)号：US20130099255A1

公开(公告)日：2013-04-25

申请号：US13660947

申请日：2012-10-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Hyun LEE ,  Jung Hyun LEE ,  Ki Sung KIM ,  Suk Ho YOON ,  Young Sun KIM

IPC: H01L33/00

CPC classification number: C23C16/407 ,  C23C16/45578 ,  H01L33/32 ,  H01L33/42 ,  H01L2933/0016

Abstract: There is provided a semiconductor light emitting device having a zinc oxide-based transparent conductive thin film in which a Group III element is doped to have waveforms having a plurality of periods in a thickness direction.

Abstract translation: 提供了一种具有氧化锌基透明导电薄膜的半导体发光器件，其中掺杂了III族元素以具有在厚度方向上具有多个周期的波形。

公开(公告)号：US20190198496A1

公开(公告)日：2019-06-27

申请号：US16255519

申请日：2019-01-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In Wook OH ,  Jae Seok YANG ,  Jong Hyun LEE ,  Hyun Jae LEE ,  Sung Wook HWANG

IPC: H01L27/088 ,  H01L27/02 ,  G06F17/50 ,  H01L23/528

CPC classification number: H01L27/0886 ,  G06F17/5072 ,  H01L23/528 ,  H01L27/0207

Abstract: A semiconductor device includes circuit active fin lines and circuit gate lines intersecting each other in a circuit active region, dummy active fin lines and dummy gate lines intersecting each other in a dummy active region, the active fin lines and the dummy active fin lines having same width and pitch, and the circuit gate lines and the dummy gate lines having same width and pitch, wherein at least some of the dummy active fin lines are aligned with and collinear with respective circuit active fin lines, and at least some of the dummy gate lines are aligned with and collinear with respective circuit gate lines.