公开(公告)号：US11535930B2

公开(公告)日：2022-12-27

申请号：US16856539

申请日：2020-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonmyoung Lee ,  Whankyun Kim ,  Eunsun Noh ,  Jeong-Heon Park ,  Junho Jeong

IPC: C23C14/54 ,  H01L27/22 ,  C23C14/00 ,  G11B5/851 ,  H01L43/12

Abstract: A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.

公开(公告)号：US08785901B2

公开(公告)日：2014-07-22

申请号：US13875731

申请日：2013-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junho Jeong ,  Sukhun Choi ,  Jangeun Lee ,  Kyunghyun Kim ,  Sechung Oh ,  Kyungtae Nam

IPC: H01L27/24 ,  H01L45/00 ,  H01L27/10 ,  H01L21/768 ,  H01L49/02 ,  H01L43/12

CPC classification number: H01L28/20 ,  H01L21/7684 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2436 ,  H01L43/12 ,  H01L45/04 ,  H01L45/06 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  H01L45/147 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1641

Abstract: Methods of fabricating semiconductor devices are provided including forming a dielectric interlayer on a substrate, the dielectric interlayer defining an opening therein. A metal pattern is formed in the opening. An oxidization process is performed on the metal pattern to form a conductive metal oxide pattern, and the conductive metal oxide pattern is planarized. Related semiconductor devices are also provided.

Abstract translation: 提供了制造半导体器件的方法，包括在衬底上形成电介质中间层，电介质层间限定开口。 在开口中形成金属图案。 对金属图案进行氧化处理以形成导电金属氧化物图案，并且导电金属氧化物图案被平坦化。 还提供了相关的半导体器件。

公开(公告)号：US11942128B2

公开(公告)日：2024-03-26

申请号：US17576047

申请日：2022-01-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Whankyun Kim ,  Jeong-Heon Park ,  Heeju Shin ,  Youngjun Cho ,  Joonmyoung Lee ,  Junho Jeong

IPC: G11C11/16 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

CPC classification number: G11C11/161 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

Abstract: Disclosed is a magnetic memory device including a pinned magnetic pattern and a free magnetic pattern that are sequentially stacked on a substrate, a tunnel barrier pattern between the pinned magnetic pattern and the free magnetic pattern, a top electrode on the free magnetic pattern, and a capping pattern between the free magnetic pattern and the top electrode. The capping pattern includes a lower capping pattern, an upper capping pattern between the lower capping pattern and the top electrode, a first non-magnetic pattern between the lower capping pattern and the upper capping pattern, and a second non-magnetic pattern between the first non-magnetic pattern and the upper capping pattern. Each of the lower capping pattern and the upper capping pattern includes a non-magnetic metal. The first non-magnetic pattern and the second non-magnetic pattern include different metals from each other.

公开(公告)号：US11834738B2

公开(公告)日：2023-12-05

申请号：US17956281

申请日：2022-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonmyoung Lee ,  Whankyun Kim ,  Eunsun Noh ,  Jeong-heon Park ,  Junho Jeong

IPC: C23C14/54 ,  C23C14/00 ,  G11B5/851 ,  H10B61/00 ,  H10N50/01

CPC classification number: C23C14/541 ,  C23C14/0057 ,  G11B5/851 ,  H10B61/00 ,  H10N50/01

Abstract: A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.

公开(公告)号：US11127786B2

公开(公告)日：2021-09-21

申请号：US16556599

申请日：2019-08-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonmyoung Lee ,  Whankyun Kim ,  Jeong-Heon Park ,  Woo Chang Lim ,  Junho Jeong

IPC: H01L27/22 ,  G11C11/16 ,  H01L43/02 ,  H01F10/32 ,  H01L43/10

Abstract: Disclosed is a magnetic memory device including a line pattern on a substrate, a magnetic tunnel junction pattern on the line pattern, and an upper conductive line that is spaced apart from the line pattern across the magnetic tunnel junction pattern and is connected to the magnetic tunnel junction pattern. The line pattern provides the magnetic tunnel junction pattern with spin-orbit torque. The line pattern includes a chalcogen-based topological insulator.

公开(公告)号：US08847341B2

公开(公告)日：2014-09-30

申请号：US13926048

申请日：2013-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jangeun Lee ,  Sechung Oh ,  Jeahyoung Lee ,  Woojin Kim ,  Junho Jeong ,  Woo Chang Lim

IPC: H01L43/02 ,  H01F10/32 ,  B82Y25/00 ,  H01L43/08 ,  H01F10/12

CPC classification number: H01L43/10 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the fist vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.

Abstract translation: 提供磁存储器件。 磁存储器件包括第一垂直磁性层和衬底上的第二垂直磁性层，第一垂直磁性层和第二垂直磁性层之间的隧道势垒层，以及在第一垂直磁性层之间的交换耦合层， 第一垂直磁性层和第一垂直磁性层的第二子层。

公开(公告)号：US11535929B2

公开(公告)日：2022-12-27

申请号：US16898609

申请日：2020-06-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong-Heon Park ,  Whankyun Kim ,  Sukhoon Kim ,  Junho Jeong

IPC: C23C14/46 ,  H01L21/687 ,  H01L21/67 ,  H01L21/677

Abstract: An ion beam deposition apparatus includes a substrate assembly to secure a substrate, a target assembly slanted with respect to the substrate assembly, the target assembly including a target with deposition materials, an ion gun to inject ion beams onto the target, such that ions of the deposition materials are discharged toward the substrate assembly to form a thin layer on the substrate, and a substrate heater to heat the substrate to a deposition temperature higher than a room temperature.

公开(公告)号：US20220037586A1

公开(公告)日：2022-02-03

申请号：US17212790

申请日：2021-03-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junho Jeong ,  Joonmyoung Lee ,  Whankyun Kim ,  Eunsun Noh ,  Jeongheon Park ,  Wanjin Chung

IPC: H01L43/02 ,  H01F10/32 ,  H01L43/10 ,  G11C11/16 ,  H01L27/22

Abstract: Provided is a magnetic memory device. The magnetic memory device may include a magnetic tunnel junction. The magnetic tunnel junction may include a fixed layer, a tunnel barrier layer on the fixed layer, a free layer on the tunnel barrier layer, a protection layer above the free layer, the protection layer comprising an amorphous metal boride, and a capping layer on the protection layer, the capping layer comprising a metal or a metal nitride.

公开(公告)号：US09343660B2

公开(公告)日：2016-05-17

申请号：US14583831

申请日：2014-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jangeun Lee ,  Sechung Oh ,  Jeahyoung Lee ,  Woojin Kim ,  Junho Jeong ,  Woo Chang Lim

IPC: H01L43/08 ,  H01L43/10 ,  B82Y25/00 ,  H01F10/32 ,  H01L43/02 ,  H01L27/22 ,  H01F10/12

CPC classification number: H01L43/10 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.

公开(公告)号：US09048417B2

公开(公告)日：2015-06-02

申请号：US14464835

申请日：2014-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jangeun Lee ,  Sechung Oh ,  Jeahyoung Lee ,  Woojin Kim ,  Junho Jeong ,  Woo Chang Lim

IPC: H01L43/08 ,  H01L43/10 ,  B82Y25/00 ,  H01F10/32 ,  H01L43/02 ,  H01L27/22 ,  H01F10/12

CPC classification number: H01L43/10 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.

Abstract translation: 提供磁存储器件。 所述磁存储器件包括：衬底上的第一垂直磁性层和第二垂直磁性层，所述第一垂直磁性层和所述第二垂直磁性层之间的隧道势垒层，以及位于所述第一垂直磁性层之间的交换耦合层， 第一垂直磁性层和第一垂直磁性层的第二子层。