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    PROCESSING SYSTEMS AND APPARATUSES HAVING A SHAFT COVER
    2.
    发明申请
    PROCESSING SYSTEMS AND APPARATUSES HAVING A SHAFT COVER 审中-公开
    加工系统和具有轴承盖的装置

    公开(公告)号：US20120073503A1

    公开(公告)日：2012-03-29

    申请号：US13098241

    申请日：2011-04-29

    申请人： Juno Yu-Ting Huang ,  Sang Won Kang ,  David H. Quach ,  Wei-Yung Hsu

    发明人： Juno Yu-Ting Huang ,  Sang Won Kang ,  David H. Quach ,  Wei-Yung Hsu

    IPC分类号： C30B25/08 ,  C30B25/12

    CPC分类号： C30B25/08 ,  C30B25/12 ,  C30B29/403

    摘要： Apparatus and systems are disclosed for processing a substrate. In an embodiment, a system includes a processing chamber, which includes a substrate support to support the substrate. The chamber further includes a plate member positioned below the substrate support and designed to improve heating efficiency within the processing chamber. The processing chamber further includes a lower dome positioned below the plate member. The plate member is designed to prevent a coating from being deposited on the lower dome during processing conditions. The plate member is designed to prevent particles and debris from falling below the plate member. The plate member is designed to improve heating uniformity between the plate member and the substrate within the processing chamber.

    摘要翻译： 公开了用于处理衬底的装置和系统。 在一个实施例中，系统包括处理室，其包括用于支撑衬底的衬底支撑件。 腔室还包括位于衬底支撑件下方并被设计成提高处理室内的加热效率的板构件。 处理室还包括位于板构件下方的下拱顶。 板构件被设计成防止在加工条件下涂层沉积在下圆顶上。 板构件被设计成防止颗粒和碎屑落在板构件下方。 板构件被设计成改善处理室内的板构件和衬底之间的加热均匀性。

    GROWTH OF III-V LED STACKS USING NANO MASKS
    6.
    发明申请
    GROWTH OF III-V LED STACKS USING NANO MASKS 审中-公开
    使用NANO MASKS的III-V LED堆叠的增长

    公开(公告)号：US20120235115A1

    公开(公告)日：2012-09-20

    申请号：US13355255

    申请日：2012-01-20

    申请人： Sang Won Kang ,  Jie Su ,  Tuoh-Bin NG ,  David Bour ,  Wei-Yung Hsu

    发明人： Sang Won Kang ,  Jie Su ,  Tuoh-Bin NG ,  David Bour ,  Wei-Yung Hsu

    IPC分类号： H01L21/205 ,  C23C16/34 ,  C23C16/52 ,  H01L33/06

    CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/02 ,  H01L33/20

    摘要： Methods, semiconductor material stacks and equipment for manufacture of light emitting diodes (LEDs) with improve crystal quality. A growth stopper is deposited between nuclei for a group III-V material, such as GaN, to form a nano mask. The group III-V material is laterally overgrown from a region of the nuclei not covered by the nano mask to form a continuous material layer with reduced dislocation density in preparation for subsequent growth of n-type and p-type layers of the LED. The lateral overgrowth from the nuclei may further recover the surface morphology of the buffer layer despite the presence of the nano mask. Presence of the growth stopper may further result in void formation on a substrate side of an LED stack to improve light extraction efficiency.

    摘要翻译： 方法，用于制造具有改善晶体质量的发光二极管（LED）的半导体材料堆叠和设备。 在诸如GaN的III-V族材料的核之间沉积生长塞，以形成纳米掩模。 III-V族材料从未被纳米掩模覆盖的核的区域横向长满，以形成具有降低的位错密度的连续材料层，以准备LED的n型和p型层的随后生长。 即使存在纳米掩模，来自核的侧向过度生长也可进一步恢复缓冲层的表面形态。 生长停止剂的存在可能进一步导致在LED堆叠的衬底侧上的空隙形成以提高光提取效率。

    METHOD OF DECONTAMINATION OF PROCESS CHAMBER AFTER IN-SITU CHAMBER CLEAN
    7.
    发明申请
    METHOD OF DECONTAMINATION OF PROCESS CHAMBER AFTER IN-SITU CHAMBER CLEAN 审中-公开
    现场室清洁后过程室去除的方法

    公开(公告)号：US20110117728A1

    公开(公告)日：2011-05-19

    申请号：US12868899

    申请日：2010-08-26

    申请人： Jie Su ,  Lori D. Washington ,  Sandeep Nijhawan ,  Olga Kryliouk ,  Jacob Grayson ,  Sang Won Kang ,  Dong Hyung Lee ,  Hua Chung

    发明人： Jie Su ,  Lori D. Washington ,  Sandeep Nijhawan ,  Olga Kryliouk ,  Jacob Grayson ,  Sang Won Kang ,  Dong Hyung Lee ,  Hua Chung

    IPC分类号： H01L21/20 ,  B08B9/00

    CPC分类号： C23C16/4405 ,  C23C16/4404 ,  C23C16/45574 ,  H01L21/67115

    摘要： A method and apparatus for removing deposition products from internal surfaces of a processing chamber, and for preventing or slowing growth of such deposition products. A halogen containing gas is provided to the chamber to etch away deposition products. A halogen scavenging gas is provided to the chamber to remove any residual halogen. The halogen scavenging gas is generally activated by exposure to electromagnetic energy, either inside the processing chamber by thermal energy, or in a remote chamber by electric field, UV, or microwave. A deposition precursor may be added to the halogen scavenging gas to form a deposition resistant film on the internal surfaces of the chamber. Additionally, or alternately, a deposition resistant film may be formed by sputtering a deposition resistant metal onto internal components of the processing chamber in a PVD process.

    摘要翻译： 一种用于从处理室的内表面去除沉积产物并用于防止或减缓这种沉积产物的生长的方法和装置。 将含卤素气体提供到室以蚀刻掉沉积产物。 将卤素清除气体提供到室以除去任何残留的卤素。 卤素清除气体通常通过暴露于电磁能（通过热能在处理室内）或通过电场，UV或微波在远程室中而被激活。 可以将沉积前体添加到卤素清除气体中，以在室的内表面上形成耐沉积膜。 另外，或者也可以通过在PVD工艺中将耐沉积金属溅射到处理室的内部部件上来形成耐沉积膜。

    METHODS FOR ENHANCED PROCESSING CHAMBER CLEANING
    8.
    发明申请
    METHODS FOR ENHANCED PROCESSING CHAMBER CLEANING 审中-公开
    用于增强加工室清洁度的方法

    公开(公告)号：US20120000490A1

    公开(公告)日：2012-01-05

    申请号：US13175170

    申请日：2011-07-01

    申请人： HUA CHUNG ,  Sang Won Kang

    发明人： HUA CHUNG ,  Sang Won Kang

    IPC分类号： B08B9/00

    CPC分类号： B08B7/0035 ,  C23C16/4405 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45576

    摘要： Methods and apparatus for cleaning a showerhead and other chamber components used in a chemical vapor deposition process are provided. The methods comprise establishing a thermal gradient in a chamber having a showerhead assembly with deposited material thereon, providing a halogen containing cleaning gas to the chamber, wherein the thermal gradient causes a turbulent or convective flow of the cleaning gas, removing the coating of deposited material from the showerhead assembly by reacting the halogen containing cleaning gas with the deposited material, and exhausting reaction by-products from the chamber.

    摘要翻译： 提供了用于清洁在化学气相沉积工艺中使用的喷头和其它室组件的方法和设备。 所述方法包括在具有在其上具有沉积材料的喷头组件的腔室中建立热梯度，向腔室提供含卤素的清洁气体，其中热梯度引起清洁气体的湍流或对流流动，去除沉积材料的涂层 通过使含有卤素的清洁气体与沉积材料反应从喷淋头组件中排出反应副产物。

    Semiconductor light emitting device
    10.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US08410497B2

    公开(公告)日：2013-04-02

    申请号：US12338438

    申请日：2008-12-18

    申请人： Sang Won Kang ,  Seong Ju Park ,  Joo Young Cho ,  Il Kyu Park ,  Yong Chun Kim ,  Dong Joon Kim ,  Jeong Tak Oh ,  Je Won Kim

    发明人： Sang Won Kang ,  Seong Ju Park ,  Joo Young Cho ,  Il Kyu Park ,  Yong Chun Kim ,  Dong Joon Kim ,  Jeong Tak Oh ,  Je Won Kim

    IPC分类号： H01L33/00

    CPC分类号： H01L33/02 ,  H01L33/14 ,  H01L33/32 ,  H01L33/387 ,  H01L33/40 ,  H01L33/641

    摘要： There is provided a semiconductor light emitting device that can easily dissipate heat, improve current spreading efficiency, and reduce defects by blocking dislocations occurring when a semiconductor layer is grown to thereby increase reliability. A semiconductor light emitting device including a substrate, a light emitting structure having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated, and an n-type electrode and a p-type electrode formed on the n-type semiconductor layer and the p-type semiconductor layer, respectively, according to an aspect of the invention may include: a metal layer formed in the n-type semiconductor layer and contacting the n-type electrode.

    摘要翻译： 提供了一种半导体发光器件，其可以容易地散热，提高电流扩散效率，并且通过阻止半导体层生长时发生的位错从而降低可靠性，从而减少缺陷。 一种半导体发光器件，包括基板，依次层叠有n型半导体层，有源层和p型半导体层的发光结构，以及形成在所述n型半导体层上的n型电极和p型电极 n型半导体层和p型半导体层可以包括：形成在n型半导体层中并与n型电极接触的金属层。