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公开(公告)号:US20150367622A1
公开(公告)日:2015-12-24
申请号:US14740957
申请日:2015-06-16
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Hiroki ADACHI , Saki EGUCHI , Masakatsu OHNO , Junpei YANAKA , Yoshiharu HIRAKATA
CPC classification number: B32B43/006 , B32B37/003 , B32B37/025 , B32B37/12 , B32B37/187 , B32B37/22 , B32B38/10 , B32B38/18 , B32B39/00 , B32B2457/00 , B32B2457/20 , B32B2457/208 , H01L21/67132 , H01L21/6835 , H01L2221/68318 , H01L2221/6835 , H01L2221/68363 , H01L2221/68386 , Y10T156/195
Abstract: A peeling apparatus including a support body supply unit, a support body hold unit, a transfer mechanism, and a first structure body. The first structure body has a convex surface. The support body supply unit has a function of unwinding a first support body and includes one of a pair of tension applying mechanisms. The support body hold unit includes the other of the pair of tension applying mechanisms. The pair of tension applying mechanisms applies tension to the first support body. The transfer mechanism has a function of transferring a process member. The first structure body has a function of bending back the first support body along the convex surface. The first structure body has a function of dividing the process member into a first member and a second member. An angle at which the first structure body bends back the first support body is an obtuse angle.
Abstract translation: 一种剥离装置,包括支撑体供给单元,支撑体保持单元,转印机构和第一结构体。 第一结构体具有凸面。 支撑体供给单元具有展开第一支撑体的功能,并且包括一对张力施加机构中的一个。 支撑体保持单元包括一对张力施加机构中的另一个。 一对张力施加机构对第一支撑体施加张力。 传送机构具有传送处理部件的功能。 第一结构体具有沿凸起表面弯曲第一支撑体的功能。 第一结构体具有将处理构件分割成第一构件和第二构件的功能。 第一结构体弯曲回第一支撑体的角度是钝角。
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公开(公告)号:US20180061638A1
公开(公告)日:2018-03-01
申请号:US15687855
申请日:2017-08-28
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei YAMAZAKI , Masataka SATO , Naoki IKEZAWA , Junpei YANAKA , Satoru IDOJIRI
CPC classification number: H01L31/1892 , H01L21/02345 , H01L21/02488 , H01L21/02694 , H01L21/6835 , H01L27/1266 , H01L29/66969 , H01L31/1896 , H01L51/003 , H01L2221/68386 , H01L2224/83052 , H01L2924/35121
Abstract: The yield of a manufacturing process of a semiconductor device is increased. The productivity of a semiconductor device is increased. A first material layer is formed over a substrate, a second material layer is formed over the first material layer, and the first material layer and the second material layer are separated from each other, so that a semiconductor device is manufactured. In addition, a stack including the first material layer and the second material layer is preferably heated before the separation. The first material layer includes one or more of hydrogen, oxygen, and water. The first material layer includes a metal oxide, for example. The second material layer includes a resin (e.g., polyimide or acrylic). The first material layer and the second material layer are separated from each other by cutting a hydrogen bond. The first material layer and the second material layer are separated from each other in such a manner that water separated out by heat treatment at an interface between the first material layer and the second material layer or in the vicinity of the interface is irradiated with light.
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公开(公告)号:US20170309731A1
公开(公告)日:2017-10-26
申请号:US15486545
申请日:2017-04-13
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei YAMAZAKI , Junpei YANAKA , Seiji YASUMOTO , Masakatsu OHNO , Hiroki ADACHI
IPC: H01L29/66 , H01L21/02 , H01L21/311
CPC classification number: H01L29/66969 , H01L21/02532 , H01L21/02609 , H01L21/02623 , H01L21/31116
Abstract: A low-cost separation method with high mass productivity is provided. A first layer with a thickness of 0.1 μm or more and 3 μm or less can be formed by using a photosensitive and thermosetting material over the formation substrate, a resin layer comprising an opening is formed by forming an opening in the first layer by using a photolithography method, a silicon layer or an oxide layer is formed so as to overlap with the opening of the resin layer, a transistor including a metal oxide is formed over the resin layer, a conductive layer formed in the same manufacturing steps as the source or drain of the transistor is formed over the silicon layer or the oxide layer, the resin layer and one of the silicon layer and the oxide layer are irradiated with the laser light, and the transistor and the conductive layer are separated from the formation substrate.
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公开(公告)号:US20210167329A1
公开(公告)日:2021-06-03
申请号:US17267857
申请日:2019-08-08
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Hiroki ADACHI , Junpei YANAKA , Masataka SATO
Abstract: A light-emitting device capable of long-time display in a bent state is provided. A light-emitting device that can be repeatedly bent with a small radius of curvature is provided. The flexible light-emitting device includes a light-emitting element, a first inorganic insulating layer, a second inorganic insulating layer, and a first organic insulating layer. The first organic insulating layer is positioned over the first inorganic insulating layer. The light-emitting element is positioned over the first inorganic insulating layer with the first organic insulating layer therebetween. The second inorganic insulating layer is positioned over the light-emitting element. An end portion of the first inorganic insulating layer and an end portion of the second inorganic insulating layer are each positioned inward from an end portion of the first organic insulating layer. The end portion of the first organic insulating layer is exposed on a side surface of the light-emitting device. The first inorganic insulating layer and the second inorganic insulating layer are preferably in contact with each other outside an end portion of the light-emitting element.
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公开(公告)号:US20180076401A1
公开(公告)日:2018-03-15
申请号:US15810249
申请日:2017-11-13
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Tatsuya SAKUISHI , Yutaka UCHIDA , Hiroki ADACHI , Saki EGUCHI , Junpei YANAKA , Kayo KUMAKURA , Seiji YASUMOTO , Kohei YOKOYAMA , Akihiro CHIDA
CPC classification number: H01L51/0097 , B32B7/02 , B32B7/06 , B32B7/12 , B32B15/08 , B32B15/18 , B32B15/20 , B32B17/00 , B32B17/06 , B32B27/20 , B32B27/286 , B32B27/30 , B32B27/325 , B32B27/34 , B32B27/36 , B32B27/365 , B32B37/02 , B32B37/10 , B32B37/1292 , B32B37/18 , B32B38/10 , B32B2250/05 , B32B2255/20 , B32B2260/021 , B32B2260/046 , B32B2264/102 , B32B2307/202 , B32B2307/40 , B32B2307/50 , B32B2307/536 , B32B2307/558 , B32B2310/0843 , B32B2315/08 , B32B2457/20 , H01L51/003 , H01L51/5253 , H01L2251/5338 , Y02E10/549 , Y02P70/521
Abstract: A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C.
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公开(公告)号:US20150351168A1
公开(公告)日:2015-12-03
申请号:US14725071
申请日:2015-05-29
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Seiji YASUMOTO , Masataka SATO , Saki OBANA , Junpei YANAKA , Koichi TAKESHIMA , Minato ITO , Kohei YOKOYAMA
CPC classification number: H05B33/04 , B32B7/12 , B32B17/06 , B32B27/281 , B32B27/283 , B32B27/30 , B32B27/308 , B32B27/32 , B32B27/365 , B32B27/38 , B32B27/42 , B32B2255/20 , B32B2307/306 , B32B2457/00 , B32B2457/206 , H01L27/322 , H01L27/323 , H01L27/3276 , H01L51/525 , H01L51/5253 , H01L2227/326 , H01L2251/5338 , H01L2251/55 , H05B33/12 , Y10T428/24975
Abstract: A highly reliable light-emitting device is provided. A light-emitting device with high resistance to repeated bending is provided. A light-emitting device in which cracks are less likely to occur even in a high-temperature and high-humidity environment is provided. The light-emitting device includes a light-emitting element between a pair of insulating layers. The pair of insulating layers is sandwiched between a pair of bonding layers. The pair of bonding layers is sandwiched between a pair of flexible substrates. At least one of the insulating layers has compressive stress. At least one of the bonding layers has a glass transition temperature higher than or equal to 60° C. At least one of the substrates has a coefficient of linear expansion less than or equal to 60 ppm/K.
Abstract translation: 提供了高度可靠的发光装置。 提供了具有高抗重复弯曲性的发光装置。 提供即使在高温高湿环境下也难以发生裂纹的发光装置。 发光装置包括在一对绝缘层之间的发光元件。 一对绝缘层夹在一对接合层之间。 一对接合层夹在一对柔性基板之间。 至少一个绝缘层具有压应力。 至少一个接合层的玻璃化转变温度高于或等于60℃。至少一个基板具有小于或等于60ppm / K的线性膨胀系数。
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公开(公告)号:US20190035820A1
公开(公告)日:2019-01-31
申请号:US16143970
申请日:2018-09-27
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Junpei YANAKA , Kayo KUMAKURA , Masataka SATO , Satoru IDOJIRI , Kensuke YOSHIZUMI , Mari TATEISHI , Natsuko TAKASE
CPC classification number: H01L27/1225 , H01L23/293 , H01L27/124 , H01L27/1266 , H01L27/3262 , H01L51/003 , H01L2227/323
Abstract: To provide a peeling method that achieves low cost and high mass productivity. The peeling method includes the steps of: forming a first layer with a photosensitive material over a formation substrate; forming a first region and a second region having a smaller thickness than the first region in the first layer by photolithography to form a resin layer having the first region and the second region; forming a transistor including an oxide semiconductor in a channel formation region over the first region in the resin layer; forming a conductive layer over the second region in the resin layer; and irradiating the resin layer with laser light to separate the transistor and the formation substrate.
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公开(公告)号:US20170338250A1
公开(公告)日:2017-11-23
申请号:US15596412
申请日:2017-05-16
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Junpei YANAKA , Kayo KUMAKURA , Masataka SATO , Satoru IDOJIRI , Kensuke YOSHIZUMI , Mari TATEISHI , Natsuko TAKASE
CPC classification number: H01L27/1225 , H01L23/293 , H01L27/124 , H01L27/1266 , H01L27/3262 , H01L51/003 , H01L2227/323
Abstract: To provide a peeling method that achieves low cost and high mass productivity. The peeling method includes the steps of: forming a first layer with a photosensitive material over a formation substrate; forming a first region and a second region having a smaller thickness than the first region in the first layer by photolithography to form a resin layer having the first region and the second region; forming a transistor including an oxide semiconductor in a channel formation region over the first region in the resin layer; forming a conductive layer over the second region in the resin layer; and irradiating the resin layer with laser light to separate the transistor and the formation substrate.
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公开(公告)号:US20170092885A1
公开(公告)日:2017-03-30
申请号:US15252295
申请日:2016-08-31
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Tatsuya SAKUISHI , Yutaka UCHIDA , Hiroki ADACHI , Saki EGUCHI , Junpei YANAKA , Kayo KUMAKURA , Seiji YASUMOTO , Kohei YOKOYAMA , Akihiro CHIDA
CPC classification number: H01L51/0097 , B32B7/02 , B32B7/06 , B32B7/12 , B32B15/08 , B32B15/18 , B32B15/20 , B32B17/00 , B32B17/06 , B32B27/20 , B32B27/286 , B32B27/30 , B32B27/325 , B32B27/34 , B32B27/36 , B32B27/365 , B32B37/02 , B32B37/10 , B32B37/1292 , B32B37/18 , B32B38/10 , B32B2250/05 , B32B2255/20 , B32B2260/021 , B32B2260/046 , B32B2264/102 , B32B2307/202 , B32B2307/40 , B32B2307/50 , B32B2307/536 , B32B2307/558 , B32B2310/0843 , B32B2315/08 , B32B2457/20 , H01L51/003 , H01L51/5253 , H01L2251/5338 , Y02E10/549 , Y02P70/521
Abstract: A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C.
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公开(公告)号:US20150236280A1
公开(公告)日:2015-08-20
申请号:US14621914
申请日:2015-02-13
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Tatsuya SAKUISHI , Yutaka UCHIDA , Hiroki ADACHI , Saki EGUCHI , Junpei YANAKA , Kayo KUMAKURA , Seiji YASUMOTO , Kohei YOKOYAMA , Akihiro CHIDA
CPC classification number: H01L51/0097 , B32B7/02 , B32B7/06 , B32B7/12 , B32B15/08 , B32B15/18 , B32B15/20 , B32B17/00 , B32B17/06 , B32B27/20 , B32B27/286 , B32B27/30 , B32B27/325 , B32B27/34 , B32B27/36 , B32B27/365 , B32B37/02 , B32B37/10 , B32B37/1292 , B32B37/18 , B32B38/10 , B32B2250/05 , B32B2255/20 , B32B2260/021 , B32B2260/046 , B32B2264/102 , B32B2307/202 , B32B2307/40 , B32B2307/50 , B32B2307/536 , B32B2307/558 , B32B2310/0843 , B32B2315/08 , B32B2457/20 , H01L51/003 , H01L51/5253 , H01L2251/5338 , Y02E10/549 , Y02P70/521
Abstract: A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C.
Abstract translation: 提供了灵活的设备。 柔性装置的粘合层的硬度设定为高于70°的肖氏D值,或优选高于或等于邵氏D的80°。挠性装置的柔性基板的膨胀系数设定得较小 比58ppm /℃,或优选小于或等于30ppm /℃
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