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19 条记录 (耗时 0.023 秒)

    Buried ridge waveguide laser diode
    1.
    发明申请
    Buried ridge waveguide laser diode 有权
    埋脊波导激光二极管

    公开(公告)号：US20070076773A1

    公开(公告)日：2007-04-05

    申请号：US11633739

    申请日：2006-12-05

    申请人： Su Hwan Oh ,  Ki Kim ,  Oh Kee Kwon ,  Yong Baek

    发明人： Su Hwan Oh ,  Ki Kim ,  Oh Kee Kwon ,  Yong Baek

    IPC分类号： H01S5/00

    CPC分类号： H01S5/2231 ,  B82Y20/00 ,  H01S5/1039 ,  H01S5/2222 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/34306

    摘要： Provided is a buried ridge waveguide laser diode that has improved temperature characteristics and can reduce optical loss by a leakage current. The buried ridge waveguide laser diode includes: a ridge region that extends vertically with a constant width and is composed of a selective etching layer and a first compound layer formed of a first conductive type material on a portion of the clad layer; and a p-n-p current blocking layer that has a thickness identical to the depth of the ridge region on the clad layer outside the ridge region and includes a second compound layer formed of a second conductive type material opposite to the first conductive type material. At this time, the current blocking layer includes the first compound layer extending on the second compound layer.

    摘要翻译： 提供了具有改善的温度特性并且可以通过漏电流来减少光学损耗的埋脊式波导激光二极管。 掩埋脊波导激光二极管包括：以恒定宽度垂直延伸的脊区域，并且由包层的一部分上的选择性蚀刻层和由第一导电型材料形成的第一复合层构成; 以及p-n-p电流阻挡层，其厚度与脊区域外的包覆层上的脊区域的深度相同，并且包括由与第一导电类型材料相对的第二导电类型材料形成的第二化合物层。 此时，电流阻挡层包括在第二化合物层上延伸的第一化合物层。

    Buried ridge waveguide laser diode
    5.
    发明授权
    Buried ridge waveguide laser diode 有权
    埋脊波导激光二极管

    公开(公告)号：US07551658B2

    公开(公告)日：2009-06-23

    申请号：US11633739

    申请日：2006-12-05

    申请人： Su Hwan Oh ,  Ki soo Kim ,  Oh Kee Kwon ,  Yong soon Baek

    发明人： Su Hwan Oh ,  Ki soo Kim ,  Oh Kee Kwon ,  Yong soon Baek

    IPC分类号： H01S5/00

    CPC分类号： H01S5/2231 ,  B82Y20/00 ,  H01S5/1039 ,  H01S5/2222 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/34306

    摘要： Provided is a buried ridge waveguide laser diode that has improved temperature characteristics and can reduce optical loss by a leakage current. The buried ridge waveguide laser diode includes: a ridge region that extends vertically with a constant width and is composed of a selective etching layer and a first compound layer formed of a first conductive type material on a portion of the clad layer; and a p-n-p current blocking layer that has a thickness identical to the depth of the ridge region on the clad layer outside the ridge region and includes a second compound layer formed of a second conductive type material opposite to the first conductive type material. At this time, the current blocking layer includes the first compound layer extending on the second compound layer.

    摘要翻译： 提供了具有改善的温度特性并且可以通过漏电流来减少光学损耗的埋脊式波导激光二极管。 掩埋脊波导激光二极管包括：以恒定宽度垂直延伸的脊区域，并且由包层的一部分上的选择性蚀刻层和由第一导电型材料形成的第一复合层构成; 以及p-n-p电流阻挡层，其厚度与脊区域外的包覆层上的脊区域的深度相同，并且包括由与第一导电类型材料相对的第二导电类型材料形成的第二化合物层。 此时，电流阻挡层包括在第二化合物层上延伸的第一化合物层。

    Reflective semiconductor optical amplifier (R-SOA) with dual buried heterostructure
    7.
    发明授权
    Reflective semiconductor optical amplifier (R-SOA) with dual buried heterostructure 有权
    具有双掩埋异质结构的反射半导体光放大器（R-SOA）

    公开(公告)号：US07920322B2

    公开(公告)日：2011-04-05

    申请号：US11924772

    申请日：2007-10-26

    申请人： Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

    发明人： Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

    IPC分类号： H01S5/00 ,  H01L29/06 ,  H01L33/20

    CPC分类号： G02B6/1228 ,  G02B2006/121 ,  H01L33/0045 ,  H01S5/026 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/227 ,  H01S5/50

    摘要： Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

    摘要翻译： 提供了反射半导体光放大器（R-SOA）和超发光二极管（SLD）。 R-SOA包括：基板; 包括下包层，独立于光的偏振的有源层和顺序地堆叠在基板上的上包层的光波导，所述光波导包括线性，弯曲和锥形的波导区域; 以及形成在所述光波导周围的电流阻挡层，以阻挡所述有源层中的电流流动，其中所述线性和弯曲波导区域具有单个埋入异质（BH）结构，并且所述锥形波导区域具有双BH结构。

    Reflective semiconductor optical amplifier (R-SOA) and superluminescent diode (SLD)
    9.
    发明授权
    Reflective semiconductor optical amplifier (R-SOA) and superluminescent diode (SLD) 有权
    反射半导体光放大器（R-SOA）和超发光二极管（SLD）

    公开(公告)号：US08363314B2

    公开(公告)日：2013-01-29

    申请号：US12929970

    申请日：2011-02-28

    申请人： Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

    发明人： Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

    IPC分类号： H01S5/227

    CPC分类号： G02B6/1228 ,  G02B2006/121 ,  H01L33/0045 ,  H01S5/026 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/227 ,  H01S5/50

    摘要： Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

    摘要翻译： 提供了反射半导体光放大器（R-SOA）和超发光二极管（SLD）。 R-SOA包括：基板; 包括下包层，独立于光的偏振的有源层和顺序地堆叠在基板上的上包层的光波导，所述光波导包括线性，弯曲和锥形的波导区域; 以及形成在所述光波导周围的电流阻挡层，以阻挡所述有源层中的电流流动，其中所述线性和弯曲波导区域具有单个埋入异质（BH）结构，并且所述锥形波导区域具有双BH结构。

    External cavity laser light source
    10.
    发明授权
    External cavity laser light source 有权
    外腔激光光源

    公开(公告)号：US08107508B2

    公开(公告)日：2012-01-31

    申请号：US12541561

    申请日：2009-08-14

    申请人： Su Hwan Oh ,  Kihong Yoon ,  Kisoo Kim ,  Dae Kon Oh

    发明人： Su Hwan Oh ,  Kihong Yoon ,  Kisoo Kim ,  Dae Kon Oh

    IPC分类号： H01S3/08

    CPC分类号： H01S5/14 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/164 ,  H01S5/2231

    摘要： Provided is an external cavity laser light source. The light source includes a substrate, an optical waveguide, and a current blocking layer. The optical waveguide includes a passive waveguide layer, a lower clad layer, an active layer, and an upper clad layer that are sequentially stacked on the substrate and is divided into regions including a linear active waveguide region, a bent active waveguide region, a tapered waveguide region, and a window region. The current blocking layer was formed an outside of the active layer to reduce leakage current. The linear and bent active waveguide regions have a buried heterostructure (BH), and the tapered waveguide region and the window region have a buried ridge stripe (BRS) structure. The passive waveguide layer a width substantially equal to a maximal width of the tapered waveguide region at least in the bent active waveguide region, the tapered waveguide region, and the window region.

    摘要翻译： 提供外腔激光光源。 光源包括基板，光波导和电流阻挡层。 光波导包括顺序层叠在基板上的无源波导层，下包层，有源层和上覆层，并分为包括线性有源波导区域，弯曲有源波导区域，锥形 波导区域和窗口区域。 电流阻挡层形成在有源层的外侧，以减少泄漏电流。 线性和弯曲的有源波导区域具有掩埋异质结构（BH），并且锥形波导区域和窗口区域具有掩埋脊条纹（BRS）结构。 至少在弯曲的有源波导区域，锥形波导区域和窗口区域中，无源波导层的宽度基本上等于锥形波导区域的最大宽度。