公开(公告)号：US20160326646A1

公开(公告)日：2016-11-10

申请号：US15212774

申请日：2016-07-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji MATSUMOTO ,  Kaoru MAEKAWA ,  Tatsufumi HAMADA ,  Hiroyuki NAGAI

IPC: C23C16/455 ,  C23C16/40 ,  C23C14/14 ,  C23C14/34 ,  H01L21/768 ,  C23C16/02 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3105 ,  C23C16/18 ,  C23C16/48

CPC classification number: C23C16/45553 ,  C23C14/14 ,  C23C14/34 ,  C23C16/02 ,  C23C16/18 ,  C23C16/34 ,  C23C16/40 ,  C23C16/401 ,  C23C16/42 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45536 ,  C23C16/481 ,  H01L21/02126 ,  H01L21/02175 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76855 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming a manganese-containing film to be formed between an underlayer and a copper film includes reacting a manganese compound gas with a nitrogen-containing reaction gas to form a nitrogen-containing manganese film on the underlayer; and reacting a manganese compound gas with a reducing reaction gas, thermally decomposing a manganese compound gas, or performing a decomposition reaction on a manganese compound gas through irradiation of energy or active species to form a metal manganese film on the nitrogen-containing manganese film.

公开(公告)号：US20170125262A1

公开(公告)日：2017-05-04

申请号：US15340508

申请日：2016-11-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki NAGAI

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31144 ,  C23C16/04 ,  C23C16/40 ,  C23C16/45525 ,  C23C16/56 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32357 ,  H01L21/02142 ,  H01L21/02175 ,  H01L21/02186 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3105

Abstract: A method includes: forming a metal oxide film on a substrate including an etching target film and a metal pattern formed thereon, and forming an oxide film having a relatively strong oxygen bond on the metal pattern; performing a reduction treatment such that the metal oxide film formed on the metal pattern is defined as a first metal-containing film and the metal oxide film formed on the etching target film is defined as a second metal-containing film whose surface is reduced into metal; selectively forming a metal film on only the second metal-containing film formed on the etching target film, the metal film having such a property that it is easy to be formed on metal and is hard to be formed on an oxide; and obtaining an inversion pattern composed of the inversion material by etching away the metal pattern and leaving the inversion material and the metal film.

公开(公告)号：US20150270166A1

公开(公告)日：2015-09-24

申请号：US14643684

申请日：2015-03-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji MATSUMOTO ,  Hiroaki KAWASAKI ,  Hiroyuki NAGAI

IPC: H01L21/768

CPC classification number: H01L21/76883 ,  H01L21/02074 ,  H01L21/02167 ,  H01L21/02175 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/67103 ,  H01L21/67207 ,  H01L21/68742 ,  H01L21/76832 ,  H01L21/76834

Abstract: A method of fabricating a semiconductor device including a substrate having a copper interconnect exposed on a surface of an insulation film, wherein a layer of an anti-corrosion agent composed of organic material is formed on the surface of the copper interconnect. The method includes removing the layer of the anti-corrosion agent by heating the substrate; and forming a thin layer including manganese oxide on the surface of the copper interconnect by supplying a gas containing an organic compound of manganese to the substrate.

Abstract translation: 一种制造半导体器件的方法，该半导体器件包括在绝缘膜的表面上暴露的铜互连的衬底，其中在铜互连的表面上形成由有机材料构成的防腐蚀剂层。 该方法包括通过加热衬底去除防腐剂层; 以及在所述铜互连表面上形成包含氧化锰的薄层，向所述基板供给含有锰化合物的气体。

公开(公告)号：US20230135523A1

公开(公告)日：2023-05-04

申请号：US17907699

申请日：2021-08-12

Applicant: Tokyo Electron Limited

Inventor： Koji AKIYAMA ,  Hiroyuki NAGAI ,  Mitsuaki IWASHITA ,  Hirokazu UEDA

IPC: F25B21/02 ,  H10N15/10 ,  F25B49/00

Abstract: An electrocaloric effect element includes a container having a first wall and a second wall, the second wall facing the first wall, ionic liquid accommodated in the container, a first electrode provided at an outer surface of the first wall, and a movable electrode provided in the ionic liquid such that the movable electrode is movable in the ionic liquid.

公开(公告)号：US20180090446A1

公开(公告)日：2018-03-29

申请号：US15714951

申请日：2017-09-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroaki KAWASAKI ,  Takashi MATSUMOTO ,  Hiroyuki NAGAI ,  Ryota IFUKU

IPC: H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  H01L21/321

Abstract: There is provided a method for manufacturing Ni wiring. The method includes forming an Ni film on a surface of a substrate having a recess formed thereon by CVD or ALD by using an Ni compound as a film forming material and NH3gas and H2 gas as reduction gases to partially fill the recess. The method further includes annealing the substrate to make the Ni film on the surface of the substrate and on a side surface of the recess reflow into the recess.

公开(公告)号：US20170287727A1

公开(公告)日：2017-10-05

申请号：US15513718

申请日：2015-07-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuuki KIKUCHI ,  Hiroyuki NAGAI ,  Yoshihiro HIROTA ,  Mikio SUZUKI

IPC: H01L21/311 ,  C23C14/14 ,  H01L21/768

CPC classification number: H01L21/31144 ,  C23C14/14 ,  C23C14/185 ,  H01L21/311 ,  H01L21/768

Abstract: A metal hard mask for etching an etching target film that is present on a target object to be processed is formed of an amorphous alloy film that is formed by a thin film formation technique. It is preferable to use a physical vapor deposition method as the thin film formation technique, and sputtering is suitable for the use among physical vapor deposition methods. This metal hard mask is obtained by forming an amorphous alloy film on the etching target film by a thin film formation technique and patterning the amorphous alloy film.

公开(公告)号：US20150262872A1

公开(公告)日：2015-09-17

申请号：US14642331

申请日：2015-03-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadahiro ISHIZAKA ,  Takashi SAKUMA ,  Osamu YOKOYAMA ,  Kenji MATSUMOTO ,  Peng CHANG ,  Hiroyuki NAGAI

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/285

CPC classification number: H01L21/76877 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76876 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a copper wiring buried in a recess portion of a predetermined pattern formed in an interlayer insulation layer of a substrate is disclosed. The method includes: forming a manganese oxide film at least on a surface of the recess portion, the manganese oxide film serving as a self-aligned barrier film through reaction with the interlayer insulation layer; performing hydrogen radical treatment with respect to a surface of the manganese oxide film; placing a metal more active than ruthenium on the surface of the manganese oxide film after the hydrogen radical treatment; forming a ruthenium film on the surface where the metal more active than ruthenium is present; and forming a copper film on the ruthenium film by physical vapor deposition (PVD) to bury the copper film in the recess portion.

Abstract translation: 公开了一种埋设在衬底的层间绝缘层中形成的预定图案的凹部中的铜布线的形成方法。 该方法包括：通过与层间绝缘层反应，至少在凹部的表面上形成氧化锰膜，氧化锰膜作为自对准阻挡膜; 相对于氧化锰膜的表面进行氢自由基处理; 在氧自由基处理之后，将比钌更金属的氧化物膜置于氧化锰膜的表面上; 在其上存在比钌更有活性的金属的表面上形成钌膜; 并通过物理气相沉积（PVD）在钌膜上形成铜膜以将铜膜埋入凹部中。

公开(公告)号：US20170062269A1

公开(公告)日：2017-03-02

申请号：US15250109

申请日：2016-08-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Peng CHANG ,  Kenji MATSUMOTO ,  Hiroyuki NAGAI

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L21/76814 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/76823 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76879 ,  H01L21/76882 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53238

Abstract: A method of manufacturing a semiconductor device includes preparing a substrate having an interlayer insulating film and a hard mask provided on the interlayer insulating film and having a predetermined pattern, etching the interlayer insulating film to form a trench, forming a MnOx film through an ALD method in a state where the hard mask is left on the interlayer insulating film, the MnOx film being turned into a self-forming barrier film by reacting with the interlayer insulating film, performing a hydrogen radical processing on the MnOx film, forming a Ru film through a CVD method, forming a Cu-based film through a PVD method or by forming a Cu seed through the PVD method, and then performing a Cu plating processing so as to embed the Cu-based film within the trench, and performing a CMP method to remove the hard mask and to form a Cu wiring.

Abstract translation: 一种制造半导体器件的方法包括制备具有层间绝缘膜和设置在层间绝缘膜上并具有预定图案的硬掩模的衬底，蚀刻层间绝缘膜以形成沟槽，通过ALD法形成MnO x膜 在硬掩模留在层间绝缘膜上的状态下，MnO x膜通过与层间绝缘膜反应而变成自形成阻挡膜，对MnO x膜进行氢自由基加工，形成Ru膜通过 CVD方法，通过PVD法形成Cu基膜或通过PVD法形成Cu种子，然后进行Cu电镀处理以将Cu基膜包埋在沟槽内，并进行CMP方法 以去除硬掩模并形成Cu布线。

公开(公告)号：US20160276218A1

公开(公告)日：2016-09-22

申请号：US15072165

申请日：2016-03-16

Applicant: Tokyo Electron Limited

Inventor： Kenji MATSUMOTO ,  Tadahiro ISHIZAKA ,  Peng CHANG ,  Osamu YOKOYAMA ,  Takashi SAKUMA ,  Hiroyuki NAGAI

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L23/53238 ,  H01L21/28556 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843

Abstract: In a Cu wiring manufacturing method, a MnOx film which becomes a self-formed barrier film by reaction with an interlayer insulating film of a substrate is formed on a surface of a recess formed in the interlayer insulating film by ALD. A hydrogen radical process is performed on a surface of the MnOx film to reduce the surface of the MnOx film. A Ru film is formed by CVD on the surface of the MnOx film which has been reduced by the hydrogen radical process. A Cu-based film is formed on the Ru film by PVD to be filled in the recess. When the Ru film is formed, a film-formation condition of the MnOx film and a condition of the hydrogen radical process are set such that nucleus formation is facilitated and the Ru film is formed in a state where a surface smoothness is high.

Abstract translation: 在Cu布线制造方法中，通过ALD形成在层间绝缘膜的凹部的表面上，形成通过与基板的层间绝缘膜反应而成为自形成的阻挡膜的MnO x膜。 在MnO x膜的表面上进行氢自由基处理以减少MnO x膜的表面。 在通过氢自由基还原的MnO x膜的表面上通过CVD形成Ru膜。 通过PVD在Ru膜上形成Cu基膜以填充在凹部中。 当形成Ru膜时，设定MnO x膜的成膜条件和氢自由基工艺的条件，使得形成核容易，并且在表面光滑度高的状态下形成Ru膜。

公开(公告)号：US20150110975A1

公开(公告)日：2015-04-23

申请号：US14566807

申请日：2014-12-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji MATSUMOTO ,  Kaoru MAEKAWA ,  Tatsufumi HAMADA ,  Hiroyuki NAGAI

IPC: C23C16/455 ,  C23C16/42 ,  C23C16/34 ,  C23C16/48 ,  C23C16/40

CPC classification number: C23C16/45553 ,  C23C14/14 ,  C23C14/34 ,  C23C16/02 ,  C23C16/18 ,  C23C16/34 ,  C23C16/40 ,  C23C16/401 ,  C23C16/42 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45536 ,  C23C16/481 ,  H01L21/02126 ,  H01L21/02175 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76855 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming a manganese-containing film to be formed between an underlayer and a copper film includes reacting a manganese compound gas with a nitrogen-containing reaction gas to form a nitrogen-containing manganese film on the underlayer; and reacting a manganese compound gas with a reducing reaction gas, thermally decomposing a manganese compound gas, or performing a decomposition reaction on a manganese compound gas through irradiation of energy or active species to form a metal manganese film on the nitrogen-containing manganese film.

Abstract translation: 在底层和铜膜之间形成含锰膜的方法包括使锰化合物气体与含氮反应气体反应以在底层上形成含氮锰膜; 使锰化合物气体与还原反应气体反应，热分解锰化合物气体，或通过能量或活性物质的照射对锰化合物气体进行分解反应，在含氮锰膜上形成金属锰膜。