公开(公告)号：US6143584A

公开(公告)日：2000-11-07

申请号：US121893

申请日：1998-07-24

申请人： Tsuyoshi Fukada ,  Masakazu Kanosue ,  Kenichi Ao ,  Minoru Murata ,  Seiichiro Ishio

发明人： Tsuyoshi Fukada ,  Masakazu Kanosue ,  Kenichi Ao ,  Minoru Murata ,  Seiichiro Ishio

IPC分类号： G01P15/12 ,  H01L21/00

CPC分类号： G01P15/123 ,  G01P15/124

摘要： A semiconductor sensor has gauge resistors. The gauge resistors connect with aluminum electrodes through contact holes, and form a bridge circuit. The gauge resistors are formed on each chip area of a semiconductor substrate before dicing the chip areas. Then, the resistances of the gauge resistors or the output of the bridge circuit are measured. Contact positions of the gauge resistors or the size and/or shape of the contact holes are adjusted based on the result of the measurement in order to adjust the offset voltage of the bridge circuit formed on each chip area.

摘要翻译： 半导体传感器具有量规电阻。 量规电阻器通过接触孔与铝电极连接，形成桥接电路。 在切割芯片区域之前，在半导体衬底的每个芯片区域上形成量规电阻器。 然后，测量电阻的电阻或桥接电路的输出。 基于测量结果调整量规电阻器的接触位置或接触孔的尺寸和/或形状，以调整在每个芯片区域上形成的桥接电路的偏移电压。

公开(公告)号：US06448624B1

公开(公告)日：2002-09-10

申请号：US08908939

申请日：1997-08-08

申请人： Seiichiro Ishio ,  Kenichi Ao ,  Minoru Murata ,  Yasuki Shimoyama ,  Tomohito Kunda ,  Norio Kitao

发明人： Seiichiro Ishio ,  Kenichi Ao ,  Minoru Murata ,  Yasuki Shimoyama ,  Tomohito Kunda ,  Norio Kitao

IPC分类号： H01L2982

CPC分类号： G01P15/123 ,  G01P1/006 ,  G01P15/0802 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/73265 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor sensor chip is provided with a weight portion supported in a frame via beams whereby acceleration up to substantially ±1 G can be detected by utilizing piezoresistance effect of resistor elements formed on the beams. The semiconductor sensor chip is supported by a seat having a thermal expansion coefficient equivalent to that of the semiconductor sensor chip via the frame. The frame and the seat are adhered to each other by a flexible adhesive agent mixed with a plurality of resin beads functioning as spacers and under an adhesion state, air damping of the weight portion is carried out by setting a dimension of an air gap between the weight portion and the seat to a range of 7 through 15 &mgr;m.

摘要翻译： 半导体传感器芯片具有通过光束支撑在框架中的重量部分，由此通过利用形成在梁上的电阻元件的压阻效应可以检测到大致±1G的加速度。 半导体传感器芯片由具有与半导体传感器芯片的热膨胀系数相当的热膨胀系数经由框架支撑。 框架和座椅通过与作为间隔件起作用的多个树脂珠混合的柔性粘合剂彼此粘合，并且在粘合状态下，通过将重量部分的空气阻力设定在 重量部分和座椅到7到15毫米的范围。

公开(公告)号：US6130010A

公开(公告)日：2000-10-10

申请号：US772993

申请日：1996-12-23

申请人： Seiichiro Ishio ,  Kenichi Ao

发明人： Seiichiro Ishio ,  Kenichi Ao

IPC分类号： G01L1/18 ,  B81C1/00 ,  G01P15/08 ,  G01P15/12 ,  H01L21/033 ,  H01L21/306 ,  H01L29/84 ,  G03F9/00

CPC分类号： B81C1/0042 ,  G01P15/0802 ,  G01P15/123 ,  H01L21/0334 ,  G01P2015/084

摘要： In a method for producing a semiconductor dynamic sensor, an anisotropic etching mask is formed on a (100) crystal orientation silicon substrate with a main portion and form-compensation portions formed at the corners of the main portion. Each of the form-compensation portions has a rectangular shape with a long side and a short side. Further, one of the long and short sides of the etching mask stretches in the [011] direction of the silicon substrate, and the other side stretches in the [011] direction of the silicon substrate. As a result, the silicon substrate can be etched into a predetermined shape without making large corner-undercut portions on a non-etched portion corresponding to the main portion of the mask.

摘要翻译： 在制造半导体动态传感器的方法中，在主要部分的（100）晶体取向硅衬底上形成各向异性蚀刻掩模，并且形成在主要部分的角部处的形状补偿部分。 每个形状补偿部分具有长边和短边的矩形形状。 此外，蚀刻掩模的长边和短边之一在硅衬底的[011]方向上延伸，另一侧在硅衬底的[0 + E，ov1 + EE1]方向上延伸。 结果，可以在对应于掩模的主要部分的未蚀刻部分上形成大的角落底切部分，将硅衬底蚀刻成预定形状。

公开(公告)号：US06270685B1

公开(公告)日：2001-08-07

申请号：US09436358

申请日：1999-11-09

申请人： Seiichiro Ishio ,  Kenichi Ao

发明人： Seiichiro Ishio ,  Kenichi Ao

IPC分类号： C23F100

CPC分类号： B81C1/0042 ,  G01P15/0802 ,  G01P15/123 ,  G01P2015/084 ,  H01L21/0334

摘要： In a method for producing a semiconductor dynamic sensor, an anisotropic etching mask is formed on a (100) crystal orientation silicon substrate with a main portion and form-compensation portions formed at the corners of the main portion. Each of the form-compensation portions has a rectangular shape with a long side and a short side. Further, one of the long and short sides of the etching mask stretches in the direction of the silicon substrate, and the other side stretches in the direction of the silicon substrate. As a result, the silicon substrate can be etched into a predetermined shape without making large corner-undercut portions on a nonetched portion corresponding to the main portion of the mask.

摘要翻译： 在制造半导体动态传感器的方法中，在主要部分的（100）晶体取向硅衬底上形成各向异性蚀刻掩模，并且形成在主要部分的角部处的形状补偿部分。 每个形状补偿部分具有长边和短边的矩形形状。 此外，蚀刻掩模的长边和短边之一在硅衬底的<011>方向上延伸，另一侧在硅衬底的<0（超芯（1）} 1>方向上延伸。 结果，可以将硅衬底蚀刻成预定形状，而不会在对应于掩模的主要部分的非蚀刻部分上形成大的拐角切口部分。

公开(公告)号：US6065341A

公开(公告)日：2000-05-23

申请号：US209414

申请日：1998-12-11

申请人： Seiichiro Ishio ,  Minekazu Sakai ,  Kenichi Ao

发明人： Seiichiro Ishio ,  Minekazu Sakai ,  Kenichi Ao

IPC分类号： G01P15/08 ,  G01P15/125

CPC分类号： B81B3/0051 ,  G01P15/0802 ,  G01P15/125 ,  B81B2201/0235 ,  G01P2015/0814

摘要： A mass portion of a movable portion is supported by an anchor portion protruding from a substrate through a beam portion. A stopper portion fixed to the substrate through another anchor portion is disposed on a side opposite to the mass portion with respect to the beam portion to define a gap with the beam portion. The stopper portion is electrically connected to the beam portion through the anchor portions. Accordingly, the movable portion is restricted from being displaced in a direction generally parallel to a surface of the substrate, and a movable electrode of the movable portion is prevented from being attached to the fixed electrode.

摘要翻译： 可移动部分的质量部分由通过梁部分从基底突出的锚固部分支撑。 通过另一个锚定部分固定到基板的止动部分相对于梁部分设置在与质量部分相对的一侧上以限定与梁部分的间隙。 止动部分通过锚定部电连接到梁部分。 因此，可动部被限制在大致平行于基板的表面的方向上移动，并且防止可动部的可动电极附着到固定电极。

公开(公告)号：US5869876A

公开(公告)日：1999-02-09

申请号：US788169

申请日：1997-01-24

申请人： Seiichiro Ishio ,  Kenichi Ao ,  Hiroshige Sugito

发明人： Seiichiro Ishio ,  Kenichi Ao ,  Hiroshige Sugito

IPC分类号： G01P15/08 ,  G01P15/12 ,  H01L29/84 ,  H01L29/82 ,  H01L27/20

CPC分类号： G01P15/0802 ,  G01P15/124 ,  H01L29/84 ,  G01P2015/0814

摘要： A semiconductor strain sensor has a gauge forming region on a p-type substrate surrounded by a p-type isolation region that reaches the p-type substrate. The p-type substrate is etched so that the entire bottom surface of the gauge forming region is covered by the p-type substrate, and the p-type substrate or p-type isolation region is not exposed to the etched recess portion or isolation groove, each of which have a relatively high number of defects. Thus, leakage current at the PN junction can be decreased to decrease a variation in the potential of the gauge forming region.

摘要翻译： 半导体应变传感器在由p型隔离区域包围的p型衬底上具有到达p型衬底的量规形成区域。 蚀刻p型基板，使得量规形成区域的整个底面被p型基板覆盖，并且p型基板或p型隔离区域不暴露于蚀刻的凹部或隔离槽 ，每个都具有相对较多数量的缺陷。 因此，可以减小PN结处的漏电流，以减小量规形成区域的电位变化。

公开(公告)号：US06276207B1

公开(公告)日：2001-08-21

申请号：US09438293

申请日：1999-11-12

申请人： Minekazu Sakai ,  Yukihiro Takeuchi ,  Inao Toyoda ,  Seiichiro Ishio ,  Toshimasa Yamamoto ,  Eishi Kawasaki ,  Minoru Murata ,  Hiroshi Muto

发明人： Minekazu Sakai ,  Yukihiro Takeuchi ,  Inao Toyoda ,  Seiichiro Ishio ,  Toshimasa Yamamoto ,  Eishi Kawasaki ,  Minoru Murata ,  Hiroshi Muto

IPC分类号： G01P1500

CPC分类号： B81C1/00928 ,  B81B3/0008 ,  B81B3/001 ,  B81B2201/0235 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

摘要： A semiconductor acceleration sensor, which prevents an adhesion of a movable portion to a fixed portion due to an electrostatic force generated during being handled. The acceleration sensor has a sensor portion and a handling portion. The sensor portion has a first semiconductor layer; a movable portion including a weight portion supported to the first semiconductor layer for moving in accordance with an acceleration externally applied thereto and movable electrodes integrally formed with the weight portion; and fixed electrodes having a detection surface confronted to a detection surface of the movable electrodes and supported to the first semiconductor layer. The handling portion is to be contacted during being handled, and is provided at surrounding portion of the sensor portion with a trench interposed therebetween. The sensor portion is electrically insulated from the handling portion by the trench.

摘要翻译： 一种半导体加速度传感器，其防止由于在处理期间产生的静电力而将可动部分粘附到固定部分。 加速度传感器具有传感器部分和处理部分。 传感器部分具有第一半导体层; 可移动部分，包括支撑到第一半导体层的重量部分，用于根据向外施加的加速度以及与重物部分整体形成的可动电极; 以及固定电极，其具有与可动电极的检测面相对的支撑于第一半导体层的检测面。 处理部分在处理时被接触，并且在传感器部分的周围部分处设置有介于其间的沟槽。 传感器部分通过沟槽与处理部分电绝缘。

公开(公告)号：US06199430B1

公开(公告)日：2001-03-13

申请号：US09241137

申请日：1999-02-02

申请人： Kazuhiko Kano ,  Koji Hattori ,  Yoshinori Ohtsuka ,  Makiko Sugiura ,  Minekazu Sakai ,  Inao Toyoda ,  Yasutoshi Suzuki ,  Seiichiro Ishio ,  Minoru Murata

发明人： Kazuhiko Kano ,  Koji Hattori ,  Yoshinori Ohtsuka ,  Makiko Sugiura ,  Minekazu Sakai ,  Inao Toyoda ,  Yasutoshi Suzuki ,  Seiichiro Ishio ,  Minoru Murata

IPC分类号： G01P15125

CPC分类号： B81B7/0006 ,  B81B2201/0235 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/135 ,  G01P15/18 ,  G01P2015/0817 ,  G01P2015/0828 ,  G01V1/181 ,  H01H1/0036

摘要： An acceleration sensor has a ring-shaped movable electrode connected to an anchor part via beams and a fixed electrode facing the ring-shaped movable electrode defining a specific interval, which are disposed on a substrate. The movable electrode is displaced by acceleration approximately in parallel to the substrate and contacts the fixed electrode, so that the acceleration is detected. The fixed electrode is divided into a detecting fixed electrode for contacting the movable electrode and a sensitivity controlling fixed electrode insulated from the detecting fixed electrode. Accordingly, potential differences between the movable electrode and the detecting fixed electrode and between the movable electrode and the sensitivity controlling fixed electrode are independently controlled to control sensitivity of acceleration.

摘要翻译： 加速度传感器具有环形可动电极，其经由梁和固定电极连接到锚定部分，固定电极面向限定特定间隔的环形可动电极，该固定电极设置在基板上。 可移动电极通过与基板大致平行的加速移位，并与固定电极接触，从而检测加速度。 固定电极被分成用于接触可动电极的检测固定电极和与检测固定电极绝缘的灵敏度控制固定电极。 因此，独立地控制可动电极和检测用固定电极之间以及可动电极与灵敏度控制固定电极之间的电位差，以控制加速度的灵敏度。

公开(公告)号：US07141966B2

公开(公告)日：2006-11-28

申请号：US11167265

申请日：2005-06-28

申请人： Kazuyoshi Sumiya ,  Seiichiro Ishio

发明人： Kazuyoshi Sumiya ,  Seiichiro Ishio

IPC分类号： G01B7/30 ,  G01P15/08 ,  G01P15/105 ,  G01R33/038 ,  G01R33/09

CPC分类号： G01D5/147

摘要： Rotation detecting apparatus for detecting rotation of a magnetic rotor includes: a sensor chip having a magnetoresistive device; and a bias magnet. The magnetoresistive device is capable of detecting change of a magnetic vector near the sensor chip so that the rotation detecting apparatus detects the rotation of the magnetic rotor. The change of the magnetic vector is generated by the bias magnetic field and the rotation of the magnetic rotor. The bias magnet is disposed around the sensor chip so that a deflection angle of the magnetic vector is controllable.

公开(公告)号：US06789431B2

公开(公告)日：2004-09-14

申请号：US10428133

申请日：2003-05-02

申请人： Seiichiro Ishio

发明人： Seiichiro Ishio

IPC分类号： G01L900

CPC分类号： G01L9/0054

摘要： A diaphragm-type semiconductor pressure sensor includes a substantially rectangular (110) semiconductor substrate, which has four sides, an active surface of (110) crystallographic face orientation, and a back surface, which is opposite to the active surface, of (110) crystallographic face orientation. Each of the surfaces is surrounded by the four sides. Each of the four sides is at an angle of substantially 45 degrees with a crystallographic axis of orientation that is substantially parallel to the active surface. The substrate includes a diaphragm in the active surface. The diaphragm has been formed by forming a recess in the back surface. The diaphragm includes a gauge resistor. A pressure is detected on the basis of the variation in the resistance of the gauge resistor.

摘要翻译： 一种隔膜式半导体压力传感器，包括：（110）具有四边的（110）结晶面取向的有源面和与该有源面相反的背面的大致矩形（110）半导体衬底， 晶体面取向。 每个表面都被四面包围。 四个边中的每一个都是基本上平行于活性表面的大致45度的晶体轴<110>取向的角度。 基板包括活动表面中的隔膜。 隔膜通过在后表面形成凹部而形成。 隔膜包括量规电阻。 基于量规电阻器的电阻的变化来检测压力。