公开(公告)号：US08623990B2

公开(公告)日：2014-01-07

申请号：US13522576

申请日：2011-01-13

申请人： Yukie Watanabe ,  Ichiro Amasaki ,  Keizo Kimura ,  Youichi Nagai

发明人： Yukie Watanabe ,  Ichiro Amasaki ,  Keizo Kimura ,  Youichi Nagai

IPC分类号： C08G63/02 ,  C08G64/00

CPC分类号： D01F6/62 ,  C08J5/18 ,  C08J2367/00 ,  C08K5/3477 ,  C08K5/3492 ,  C08L67/02 ,  C08L101/00 ,  D01F1/106 ,  H01L31/02013 ,  H01L31/048 ,  H01L31/049 ,  Y02E10/50 ,  C08L67/00

摘要： To provide a polyester resin composition being able to maintain a long-wavelength ultraviolet-blocking effect for a long period of time, ensuring high solubility for a solvent, and having excellent light resistance. A polyester resin composition comprising a compound represented by the following formula (1) and a polyester resin: wherein each of R1a, R1b, R1c, R1d and R1e independently represents a hydrogen atom or a monovalent substituent excluding OH, at least one of the substituents represents a substituent having a positive Hammett's σp value, and the substituents may combine with each other to form a ring; and each of R1g, R1h, R1i, R1j, R1k, R1m, R1n and R1p independently represents a hydrogen atom or a monovalent substituent, and the substituents may combine with each other to form a ring.

摘要翻译： 为了提供长时间保持长波长紫外线阻断效果的聚酯树脂组合物，确保溶剂的高溶解性，耐光性优异。 一种聚酯树脂组合物，其包含由下式（1）表示的化合物和聚酯树脂：其中R1a，R1b，R1c，R1d和R1e各自独立地表示氢原子或除OH之外的一价取代基，至少一个取代基 表示具有正哈米特sigmap值的取代基，并且取代基可以彼此结合形成环; R1g，R1h，R1i，R1j，R1k，R1m，R1n和R1p各自独立地表示氢原子或一价取代基，并且取代基可以彼此结合形成环。

公开(公告)号：US20120301696A1

公开(公告)日：2012-11-29

申请号：US13522576

申请日：2011-01-13

申请人： Yukie Watanabe ,  Ichiro Amasaki ,  Keizo Kimura ,  Youichi Nagai

发明人： Yukie Watanabe ,  Ichiro Amasaki ,  Keizo Kimura ,  Youichi Nagai

IPC分类号： C08K5/3492 ,  C08L67/03

CPC分类号： D01F6/62 ,  C08J5/18 ,  C08J2367/00 ,  C08K5/3477 ,  C08K5/3492 ,  C08L67/02 ,  C08L101/00 ,  D01F1/106 ,  H01L31/02013 ,  H01L31/048 ,  H01L31/049 ,  Y02E10/50 ,  C08L67/00

摘要： To provide a polyester resin composition being able to maintain a long-wavelength ultraviolet-blocking effect for a long period of time, ensuring high solubility for a solvent, and having excellent light resistance.A polyester resin composition comprising a compound represented by the following formula (1) and a polyester resin: wherein each of R1a, R1b, R1c, R1d and R1e independently represents a hydrogen atom or a monovalent substituent excluding OH, at least one of the substituents represents a substituent having a positive Hammett's σp value, and the substituents may combine with each other to form a ring; and each of R1g, R1h, R1i, R1j, R1k, R1m, R1n and R1p independently represents a hydrogen atom or a monovalent substituent, and the substituents may combine with each other to form a ring.

摘要翻译： 为了提供长时间保持长波长紫外线阻断效果的聚酯树脂组合物，确保溶剂的高溶解性，耐光性优异。 一种聚酯树脂组合物，其包含由下式（1）表示的化合物和聚酯树脂：其中R1a，R1b，R1c，R1d和R1e各自独立地表示氢原子或除OH之外的一价取代基，至少一个取代基 表示具有正哈米特和p值的取代基，并且取代基可以彼此结合形成环; R1g，R1h，R1i，R1j，R1k，R1m，R1n和R1p各自独立地表示氢原子或一价取代基，并且取代基可以彼此结合形成环。

公开(公告)号：US09040955B2

公开(公告)日：2015-05-26

申请号：US13505226

申请日：2011-05-19

申请人： Kei Fujii ,  Katsushi Akita ,  Takashi Ishizuka ,  Hideaki Nakahata ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai

发明人： Kei Fujii ,  Katsushi Akita ,  Takashi Ishizuka ,  Hideaki Nakahata ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai

IPC分类号： H01L31/0352 ,  H01L31/105 ,  B82Y20/00

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/03046 ,  H01L31/105 ,  H01L31/1844

摘要： Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device 50 includes an absorption layer 3 of a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate 1, and an InP contact layer 5 located on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z≧−0.4x+24.6 is satisfied.

摘要翻译： 提供了一种半导体器件和光学传感器装置，每个具有减小的暗电流，并且在近红外线中向较长波长延伸的检测能力。 此外，提供了一种用于制造半导体器件的方法。 半导体器件50包括位于InP衬底1上的II型（GaAsSb / InGaAs）MQW结构的吸收层3和位于MQW结构上的InP接触层5。 在MQW结构中，GaAsSb的组成x（％）不小于44％，其厚度z（nm）不小于3nm，并且z≥-0.4x + 24.6。

公开(公告)号：US08564666B2

公开(公告)日：2013-10-22

申请号：US13548668

申请日：2012-07-13

申请人： Youichi Nagai ,  Yasuhiro Iguchi

发明人： Youichi Nagai ,  Yasuhiro Iguchi

IPC分类号： H04N7/18

CPC分类号： B82Y20/00 ,  H01L27/14649 ,  H01L27/14694 ,  H01L31/035236

摘要： An image pickup device, a visibility support apparatus, a night vision device, a navigation support apparatus, and a monitoring device are provided in which noise and dark current are suppressed to thereby provide clear images regardless of whether it is day or night. The device includes a light-receiving layer 3 having a multi-quantum well structure and a diffusion concentration distribution control layer 4 disposed on the light-receiving layer so as to be opposite an InP substrate 1, wherein the light-receiving layer has a band gap wavelength of 1.65 to 3 μm, the diffusion concentration distribution control layer has a lower band gap energy than InP, a pn junction is formed for each light-receiving element by selective diffusion of an impurity element, and the impurity selectively diffused in the light-receiving layer has a concentration of 5×1016/cm3 or less. A diffusion concentration distribution control layer has an n-type impurity concentration of 2×1015/cm3 or less before the diffusion, the diffusion concentration distribution control layer having a portion adjacent to the light-receiving layer, the portion having a low impurity concentration. The concentration of the impurity element selectively diffused in the diffusion concentration distribution control layer is decreased to be 5×1016/cm3 or less toward the light-receiving layer.

摘要翻译： 提供了一种图像拾取装置，可视性支持装置，夜视装置，导航支持装置和监视装置，其中抑制噪声和暗电流，从而提供清晰的图像，而不管它是白天还是夜晚。 该装置包括具有多量子阱结构的光接收层3和设置在光接收层上以与InP衬底1相对的扩散浓度分布控制层4，其中光接收层具有带 间隙波长为1.65〜3μm，扩散浓度分布控制层具有比InP低的带隙能量，通过杂质元素的选择性扩散形成每个受光元件的pn结，并且杂质选择性地扩散到光 接收层的浓度为5×1016 / cm3以下。 扩散浓度分布控制层在扩散前具有2×1015 / cm3以下的n型杂质浓度，扩散浓度分布控制层具有与光接收层相邻的部分，该杂质浓度低的部分。 在扩散浓度分布控制层中选择性扩散的杂质元素的浓度降低到光接收层的5×1016 / cm3以下。

公开(公告)号：US08461570B2

公开(公告)日：2013-06-11

申请号：US13127005

申请日：2010-07-07

申请人： Kei Fujii ,  Takashi Ishizuka ,  Katsushi Akita ,  Youichi Nagai ,  Tatsuya Tanabe

发明人： Kei Fujii ,  Takashi Ishizuka ,  Katsushi Akita ,  Youichi Nagai ,  Tatsuya Tanabe

IPC分类号： H01L31/0352 ,  H01L31/0256 ,  G02F1/017

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/0262 ,  H01L31/1035 ,  H01L31/109 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： A method for manufacturing a semiconductor device, by which a multiple quantum well structure having a large number of pairs can be efficiently grown while maintaining good crystalline quality, and the semiconductor device, are provided. The semiconductor device manufacturing method of the present invention includes a step of forming a multiple quantum well structure 3 having 50 or more pairs of group III-V compound semiconductor quantum wells. In the step of forming the multiple quantum well structure 3, the multiple quantum well structure is formed by metal-organic vapor phase epitaxy using only metal-organic sources (all metal-organic source MOVPE).

摘要翻译： 提供一种制造半导体器件的方法，通过该方法可以有效地生长具有大量对的多量子阱结构，同时保持良好的晶体质量，并提供半导体器件。 本发明的半导体器件制造方法包括形成具有50对以上的III-V族化合物半导体量子阱的多量子阱结构3的工序。 在形成多量子阱结构3的步骤中，通过仅使用金属 - 有机源（全部金属 - 有机源MOVPE）的金属 - 有机气相外延形成多量子阱结构。

公开(公告)号：US20120223290A1

公开(公告)日：2012-09-06

申请号：US13451031

申请日：2012-04-19

申请人： Yasuhiro Iguchi ,  Kohei Miura ,  Hiroshi Inada ,  Youichi Nagai

发明人： Yasuhiro Iguchi ,  Kohei Miura ,  Hiroshi Inada ,  Youichi Nagai

IPC分类号： H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/0262 ,  H01L21/02631 ,  H01L27/14683 ,  H01L31/03046 ,  H01L31/102 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： A light-receiving element includes a group III-V compound semiconductor stacked structure that includes an absorption layer having a pn-junction therein. The stacked structure is formed on a group III-V compound semiconductor substrate. The absorption layer has a multi- quantum well structure composed of group III-V compound semiconductors, and the pn-junction is formed by selectively diffusing an impurity element into the absorption layer. A diffusion concentration distribution control layer composed of a III-V group semiconductor is disposed in contact with the absorption layer on a side of the absorption layer opposite the side adjacent to the group III-V compound semiconductor substrate. The bandgap energy of the diffusion concentration distribution control layer is smaller than that of the group III-V compound semiconductor substrate. The concentration of the impurity element selectively diffused in the diffusion concentration distribution control layer is 5×1016/cm3 or less toward the absorption layer.

摘要翻译： 光接收元件包括III-V族化合物半导体层叠结构，其包括其中具有pn结的吸收层。 叠层结构形成在III-V族化合物半导体衬底上。 吸收层具有由III-V族化合物半导体组成的多量子阱结构，并且通过选择性地将杂质元素扩散到吸收层中而形成pn结。 由III-V族半导体构成的扩散浓度分布控制层设置成与吸收层的与III-V族化合物半导体衬底相邻的一侧相反侧的吸收层接触。 扩散浓度分布控制层的带隙能量小于III-V族化合物半导体衬底的带隙能量。 在扩散浓度分布控制层中选择性扩散的杂质元素的浓度朝向吸收层为5×1016 / cm3以下。

公开(公告)号：US20110261359A1

公开(公告)日：2011-10-27

申请号：US13142039

申请日：2009-07-30

申请人： Hiroshi Inada ,  Youichi Nagai

发明人： Hiroshi Inada ,  Youichi Nagai

IPC分类号： G01N21/59

CPC分类号： G01J5/602 ,  G01J5/0044 ,  G01J2005/0077 ,  G01N21/3504 ,  G01N21/359 ,  G01N2021/3531 ,  G01N2201/0833 ,  G01N2201/0846 ,  H01L31/035209 ,  H01L31/1035 ,  H01L2224/48091 ,  H01L2924/00014

摘要： [Object] To provide a gas monitoring device etc. with which gas monitoring can be preformed at high sensitivity by using an InP-based photodiode in which a dark current is reduced without a cooling mechanism and the sensitivity is extended to a wavelength of 1.8 μm or more.[Solution] An absorption layer 3 has a multiquantum well structure composed of group III-V semiconductors, a pn-junction 15 is formed by selectively diffusion of an impurity element in the absorption layer, and the concentration of the impurity element in the absorption layer is 5×1016/cm3 or less. The gas monitoring device detects a gas component and the like contained in a gas by receiving light having at least one wavelength of 3 μm or less.

摘要翻译： [目的]提供一种气体监测装置等，通过使用其中暗电流降低而没有冷却机构的InP基光电二极管，可以以高灵敏度进行气体监测，并且灵敏度延伸到1.8μm的波长 或者更多。 [解决方案]吸收层3具有由III-V族半导体构成的多量子阱结构，通过在吸收层中选择性地扩散杂质元素而形成pn结15，并且吸收层中杂质元素的浓度 为5×1016 / cm3以下。 气体监测装置通过接收至少一个波长为3μm以下的光来检测包含在气体中的气体成分等。

公开(公告)号：US20110210313A1

公开(公告)日：2011-09-01

申请号：US13127005

申请日：2010-07-07

申请人： Kei Fujii ,  Takashi Ishizuka ,  Katsushi Akita ,  Youichi Nagai ,  Tatsuya Tanabe

发明人： Kei Fujii ,  Takashi Ishizuka ,  Katsushi Akita ,  Youichi Nagai ,  Tatsuya Tanabe

IPC分类号： H01L31/0352 ,  H01L31/18 ,  B82Y99/00

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/0262 ,  H01L31/1035 ,  H01L31/109 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： A method for manufacturing a semiconductor device, by which a multiple quantum well structure having a large number of pairs can be efficiently grown while maintaining good crystalline quality, and the semiconductor device, are provided. The semiconductor device manufacturing method of the present invention includes a step of forming a multiple quantum well structure 3 having 50 or more pairs of group III-V compound semiconductor quantum wells. In the step of forming the multiple quantum well structure 3, the multiple quantum well structure is formed by metal-organic vapor phase epitaxy using only metal-organic sources (all metal-organic source MOVPE).

摘要翻译： 提供一种制造半导体器件的方法，通过该方法可以有效地生长具有大量对的多量子阱结构，同时保持良好的晶体质量，并提供半导体器件。 本发明的半导体器件制造方法包括形成具有50对以上的III-V族化合物半导体量子阱的多量子阱结构3的工序。 在形成多量子阱结构3的步骤中，通过仅使用金属 - 有机源（全部金属 - 有机源MOVPE）的金属 - 有机气相外延形成多量子阱结构。

公开(公告)号：US20100327386A1

公开(公告)日：2010-12-30

申请号：US12494393

申请日：2009-06-30

申请人： Youichi Nagai ,  Yasuhiro Iguchi

发明人： Youichi Nagai ,  Yasuhiro Iguchi

IPC分类号： H01L27/146 ,  H01L31/0216 ,  H01L31/18

CPC分类号： H01L27/14689 ,  H01L27/1446 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14643

摘要： A photodiode array includes a substrate of a common read-out control circuit; and a plurality of photodiodes arrayed on the substrate and each including an absorption layer, and a pair of a first conductive-side electrode and a second conductive-side electrode. In this photodiode array, each of the photodiodes is isolated from adjacent photodiodes, the first conductive-side electrodes are provided on first conductivity-type regions and electrically connected in common across all the photodiodes, and the second conductive-side electrodes are provided on second conductivity-type regions and individually electrically connected to read-out electrodes of the read-out control circuit.

摘要翻译： 光电二极管阵列包括公共读出控制电路的基板; 以及排列在基板上并且各自包括吸收层的多个光电二极管，以及一对第一导电侧电极和第二导电侧电极。 在该光电二极管阵列中，每个光电二极管与相邻的光电二极管隔离，第一导电侧电极设置在第一导电型区域上，并且在所有光电二极管上共同电连接，第二导电侧电极设置在第二导电型电极上 导电型区域，并且分别电连接到读出控制电路的读出电极。

公开(公告)号：US20100207138A1

公开(公告)日：2010-08-19

申请号：US12767783

申请日：2010-04-26

申请人： Seiji Nakahata ,  Hideaki Nakahata ,  Koji Uematsu ,  Makoto Kiyama ,  Youichi Nagai ,  Takao Nakamura

发明人： Seiji Nakahata ,  Hideaki Nakahata ,  Koji Uematsu ,  Makoto Kiyama ,  Youichi Nagai ,  Takao Nakamura

IPC分类号： H01L33/30 ,  H01L29/20

CPC分类号： H01L33/007 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02645 ,  H01L33/0075 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： Group III nitride semiconductor crystals of a size appropriate for semiconductor devices and methods for manufacturing the same, Group III nitride semiconductor devices and methods for manufacturing the same, and light-emitting appliances. A method of manufacturing a Group III nitride semiconductor crystal includes a process of growing at least one Group III nitride semiconductor crystal substrate on a starting substrate, a process of growing at least one Group III nitride semiconductor crystal layer on the Group III nitride semiconductor crystal substrate, and a process of separating a Group III nitride semiconductor crystal, constituted by the Group III nitride semiconductor crystal substrate and the Group III nitride semiconductor crystal layer, from the starting substrate, and is characterized in that the Group III nitride semiconductor crystal is 10 μm or more but 600 μm or less in thickness, and is 0.2 mm or more but 50 mm or less in width.

摘要翻译： 尺寸适合于半导体器件的III族氮化物半导体晶体及其制造方法，III族氮化物半导体器件及其制造方法以及发光器具。 制造III族氮化物半导体晶体的方法包括在起始衬底上生长至少一种III族氮化物半导体晶体衬底的工艺，在III族氮化物半导体晶体衬底上生长至少一种III族氮化物半导体晶体层的工艺 以及从起始基板分离由III族氮化物半导体晶体基板和III族氮化物半导体晶体层构成的III族氮化物半导体晶体的工序，其特征在于，所述III族氮化物半导体晶体为10μm 以上且600μm以下，宽度为0.2mm以上且50mm以下。