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公开(公告)号：US11656128B2
公开(公告)日：2023-05-23
申请号：US17729884
申请日：2022-04-26
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Chin-Jou Kuo , Bor-Shiun Lee , Ming-Fa Chen
CPC classification number: G01J5/20 , B81B3/0072 , B81C1/00666 , B81B2201/0278 , B81B2203/04 , B81C2201/0104 , B81C2201/0107
Abstract: A MEMS infrared sensing device includes a substrate and an infrared sensing element. The infrared sensing element is provided above the substrate and has a sensing area and an infrared absorbing area which do not overlap each other. The infrared sensing element includes two infrared absorbing structures, an infrared sensing layer provided between the two infrared absorbing structures, and an interdigitated electrode structure located in the sensing area. Each of the two infrared absorbing structures includes at least one infrared absorbing layer, and the two infrared absorbing structures are located in the sensing area and the infrared absorbing area. The infrared sensing layer is located in the sensing area and does not extend into the infrared absorbing area. The interdigitated electrode structure is in electrical contact with the infrared sensing layer.
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公开(公告)号：US09969613B2
公开(公告)日：2018-05-15
申请号：US13861620
申请日：2013-04-12
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Michael T. Brigham , Christopher V. Jahnes , Cameron E. Luce , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper , Eric J. White
CPC classification number: B81C1/0015 , B81B3/0021 , B81B2203/0118 , B81B2203/0315 , B81B2207/09 , B81C1/00047 , B81C1/00269 , B81C1/00365 , B81C1/00531 , B81C1/00936 , B81C2201/0104 , B81C2201/0107 , B81C2201/0121 , B81C2201/0125 , B81C2201/0132 , B81C2201/0176 , B81C2201/0181 , B81C2203/0109 , B81C2203/0145 , B81C2203/0714 , G06F17/5009
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
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公开(公告)号：US09938137B2
公开(公告)日：2018-04-10
申请号：US15162997
申请日：2016-05-24
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Michael T. Brigham , Christopher V. Jahnes , Cameron E. Luce , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper , Eric J. White
CPC classification number: B81C1/0015 , B81B3/0021 , B81B2203/0118 , B81B2203/0315 , B81B2207/09 , B81C1/00047 , B81C1/00269 , B81C1/00365 , B81C1/00531 , B81C1/00936 , B81C2201/0104 , B81C2201/0107 , B81C2201/0121 , B81C2201/0125 , B81C2201/0132 , B81C2201/0176 , B81C2201/0181 , B81C2203/0109 , B81C2203/0145 , B81C2203/0714 , G06F17/5009
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
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公开(公告)号：US20140009379A1
公开(公告)日：2014-01-09
申请号：US13543121
申请日：2012-07-06
Applicant: Sandeep K. Giri
Inventor： Sandeep K. Giri
CPC classification number: B81B3/0005 , B81B3/001 , B81B2201/042 , B81C2201/0107
Abstract: This disclosure provides systems, methods and apparatus for electromechanical systems devices with improved electrical properties and device life span. In one aspect, a conformal antistiction layer is formed within a cavity of an electromechanical systems apparatus over a roughened surface. The conformal antistiction layer can include a dielectric layer. The conformal antistiction layer can include a self-assembled monolayer (SAM) formed over the dielectric layer. The conformal antistiction layer can replicate the roughness of the surface that it is deposited on.
Abstract translation: 本公开提供了具有改善的电气性能和设备寿命的机电系统装置的系统，方法和装置。 在一个方面，在机电系统装置的空腔内在粗糙表面上形成共形抗静电层。 保形抗静电层可以包括介电层。 共形抗静电层可以包括在电介质层上形成的自组装单层（SAM）。 共形抗静电层可以复制其沉积的表面的粗糙度。
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公开(公告)号：US20130153378A1
公开(公告)日：2013-06-20
申请号：US13768235
申请日：2013-02-15
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Felix P. ANDERSON , Thomas L. MCDEVITT , Anthony K. STAMPER
CPC classification number: H01H59/00 , B81B2201/014 , B81B2203/0118 , B81B2203/04 , B81B2207/07 , B81C1/00182 , B81C2201/0107 , G06F17/5068
Abstract: A MEMS structure and methods of manufacture. The method includes forming a sacrificial metal layer at a same level as a wiring layer, in a first dielectric material. The method further includes forming a metal switch at a same level as another wiring layer, in a second dielectric material. The method further includes providing at least one vent to expose the sacrificial metal layer. The method further includes removing the sacrificial metal layer to form a planar cavity, suspending the metal switch. The method further includes capping the at least one vent to hermetically seal the planar cavity.
Abstract translation: MEMS结构及制造方法。 该方法包括在第一电介质材料中形成与布线层相同水平的牺牲金属层。 该方法还包括在第二电介质材料中形成与另一配线层相同水平的金属开关。 该方法还包括提供至少一个通风口以暴露牺牲金属层。 该方法还包括去除牺牲金属层以形成平坦的空腔，使金属开关悬挂。 该方法还包括加盖至少一个通气口以气密地密封平面腔。
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Patent Agency Ranking
公开(公告)号：US20120025331A1
公开(公告)日：2012-02-02
申请号：US12844299
申请日：2010-07-27
Applicant: Felix P. ANDERSON , Thomas L. MCDEVITT , Anthony K. STAMPER
Inventor： Felix P. ANDERSON , Thomas L. MCDEVITT , Anthony K. STAMPER
CPC classification number: H01H59/00 , B81B2201/014 , B81B2203/0118 , B81B2203/04 , B81B2207/07 , B81C1/00182 , B81C2201/0107 , G06F17/5068
Abstract: A MEMS structure and methods of manufacture. The method includes forming a sacrificial metal layer at a same level as a wiring layer, in a first dielectric material. The method further includes forming a metal switch at a same level as another wiring layer, in a second dielectric material. The method further includes providing at least one vent to expose the sacrificial metal layer. The method further includes removing the sacrificial metal layer to form a planar cavity, suspending the metal switch. The method further includes capping the at least one vent to hermetically seal the planar cavity.
Abstract translation: MEMS结构及制造方法。 该方法包括在第一电介质材料中形成与布线层相同水平的牺牲金属层。 该方法还包括在第二电介质材料中形成与另一布线层相同水平的金属开关。 该方法还包括提供至少一个通风口以暴露牺牲金属层。 该方法还包括去除牺牲金属层以形成平坦的空腔，使金属开关悬挂。 该方法还包括加盖至少一个通气口以气密地密封平面腔。
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7.发明授权Method for forming gaps in micromechanical device and micromechanical device 有权在微机械装置和微机械装置中形成间隙的方法公开(公告)号：US07811938B2
公开(公告)日：2010-10-12
申请号：US12248804
申请日：2008-10-09
Applicant: Cheng-Rong Yi-Li , Qun-Qing Li , Shou-Shan Fan
Inventor： Cheng-Rong Yi-Li , Qun-Qing Li , Shou-Shan Fan
IPC: H01L21/311
CPC classification number: B81B3/001 , B81C2201/0107
Abstract: An exemplary method for forming gaps in a micromechanical device includes providing a substrate. A first material layer is deposited over the substrate. A sacrificial layer is deposited over the first material layer. A second material layer is deposited over the sacrificial layer such that at least a portion of the sacrificial layer is exposed. The exposed portion of the sacrificial layer is etched by dry etching. The remaining portion of the sacrificial layer is etched by wet etching to form gaps between the first material layer and the second material layer. One or more bulges are formed at one side of the second material layer facing the first material layer, and are a portion of the sacrificial layer remaining after the wet etching.
Abstract translation: 用于在微机械装置中形成间隙的示例性方法包括提供基底。 第一材料层沉积在衬底上。 在第一材料层上沉积牺牲层。 在牺牲层上沉积第二材料层，使得牺牲层的至少一部分被暴露。 通过干蚀刻来蚀刻牺牲层的暴露部分。 通过湿蚀刻来蚀刻牺牲层的剩余部分，以在第一材料层和第二材料层之间形成间隙。 在第二材料层的面向第一材料层的一侧形成一个或多个凸起，并且是在湿蚀刻之后残留的牺牲层的一部分。
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公开(公告)号：US07547568B2
公开(公告)日：2009-06-16
申请号：US11360131
申请日：2006-02-22
Applicant: Chen-Jean Chou , Chun-chen Wu , Patrick F. Brinkley
Inventor： Chen-Jean Chou , Chun-chen Wu , Patrick F. Brinkley
IPC: H01L21/00
CPC classification number: B81C99/004 , B81B2201/047 , B81C1/00714 , B81C2201/0107 , G02B26/001
Abstract: A method of fabricating a MEMS device includes conditioning of an insulating layer by applying a voltage across the insulating layer via a conductive sacrificial layer for a period of time, prior to removal of the conductive sacrificial layer. This conditioning process may be used to saturate or stabilize charge accumulated within the insulating layer. The resistance across the insulating layer may also be measured to detect possible defects in the insulating layer.
Abstract translation: 制造MEMS器件的方法包括通过在去除导电牺牲层之前通过导电牺牲层在绝缘层上施加电压一段时间来调节绝缘层。 该调理过程可用于饱和或稳定在绝缘层内积聚的电荷。 还可以测量绝缘层两端的电阻，以检测绝缘层中的可能缺陷。
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公开(公告)号：US06876047B2
公开(公告)日：2005-04-05
申请号：US10290779
申请日：2002-11-08
Applicant: Shawn Jay Cunningham , Dana Richard DeReus , Subham Sett , Svetlana Tatic-Lucic
Inventor： Shawn Jay Cunningham , Dana Richard DeReus , Subham Sett , Svetlana Tatic-Lucic
IPC: B81B3/00 , B81B7/00 , H01H1/04 , H01H1/50 , H01H59/00 , H01H61/04 , H01L21/302 , H01L23/373 , H01L23/522 , H01L27/12 , H01L29/86 , H02N1/00 , H02N10/00 , H01L29/84
CPC classification number: B81B3/0024 , B81B3/0051 , B81B2201/014 , B81B2201/018 , B81B2203/0118 , B81B2203/04 , B81B2207/07 , B81C1/0015 , B81C2201/0107 , B81C2201/0108 , B81C2201/0109 , H01H1/04 , H01H1/504 , H01H59/0009 , H01H61/04 , H01H2001/0042 , H01H2001/0063 , H01H2001/0089 , H01H2059/0072 , H01H2061/006 , H01L23/3735 , H01L23/522 , H01L27/1203 , H01L2924/0002 , H01L2924/09701 , H02N1/006 , H02N10/00 , Y10T29/49222 , H01L2924/00
Abstract: MEMS Device Having A Trilayered Beam And Related Methods. According to one embodiment, a movable, trilayered microcomponent suspended over a substrate is provided and includes a first electrically conductive layer patterned to define a movable electrode. The first metal layer is separated from the substrate by a gap. The microcomponent further includes a dielectric layer formed on the first metal layer and having an end fixed with respect to the substrate. Furthermore, the microcomponent includes a second electrically conductive layer formed on the dielectric layer and patterned to define an electrode interconnect for electrically communicating with the movable electrode.
Abstract translation: 具有三层梁的MEMS器件及相关方法。 根据一个实施例，提供了悬挂在基板上的可移动的三层微型部件，并且包括图案化以限定可移动电极的第一导电层。 第一金属层通过间隙与基板分离。 微组件还包括形成在第一金属层上并具有相对于衬底固定的端部的电介质层。 此外，微组件包括形成在电介质层上并被图案化以限定用于与可动电极电连通的电极互连的第二导电层。
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10.发明授权Micro-scale interconnect device with internal heat spreader and method for fabricating same 有权具有内部散热器的微尺寸互连装置及其制造方法公开(公告)号：US06847114B2
公开(公告)日：2005-01-25
申请号：US10291146
申请日：2002-11-08
Applicant: Subham Sett , Shawn Jay Cunningham
Inventor： Subham Sett , Shawn Jay Cunningham
IPC: B81B3/00 , B81B7/00 , H01H1/04 , H01H1/50 , H01H59/00 , H01H61/04 , H01L21/302 , H01L23/373 , H01L23/522 , H01L27/12 , H01L29/86 , H02N1/00 , H02N10/00 , H01L23/34 , H01L21/44 , H01L21/48 , H01L21/50 , H01R43/00
CPC classification number: B81B3/0024 , B81B3/0051 , B81B2201/014 , B81B2201/018 , B81B2203/0118 , B81B2203/04 , B81B2207/07 , B81C1/0015 , B81C2201/0107 , B81C2201/0108 , B81C2201/0109 , H01H1/04 , H01H1/504 , H01H59/0009 , H01H61/04 , H01H2001/0042 , H01H2001/0063 , H01H2001/0089 , H01H2059/0072 , H01H2061/006 , H01L23/3735 , H01L23/522 , H01L27/1203 , H01L2924/0002 , H01L2924/09701 , H02N1/006 , H02N10/00 , Y10T29/49222 , H01L2924/00
Abstract: A micro-scale interconnect device with internal heat spreader and method for fabricating same. The device includes first and second arrays of generally coplanar electrical communication lines. The first array is disposed generally along a first plane, and the second array is disposed generally along a second plane spaced from the first plane. The arrays are electrically isolated from each other. Embedded within the interconnect device is a heat spreader element. The heat spreader element comprises a dielectric material disposed in thermal contact with at least one of the arrays, and a layer of thermally conductive material embedded in the dielectric material. The device is fabricated by forming layers of electrically conductive, dielectric, and thermally conductive materials on a substrate. The layers are arranged to enable heat energy given off by current-carrying communication lines to be transferred away from the communication lines.
Abstract translation: 具有内部散热器的微尺寸互连装置及其制造方法。 该装置包括大致共面电通信线路的第一和第二阵列。 第一阵列大致沿着第一平面布置，并且第二阵列通常沿着与第一平面间隔开的第二平面设置。 阵列彼此电隔离。 嵌入在互连装置内的是散热器元件。 散热器元件包括设置成与阵列中的至少一个热接触的电介质材料，以及嵌入电介质材料中的导热材料层。 该器件通过在衬底上形成导电的，介电的和导热的材料层来制造。 这些层被布置成使得通过载流通信线路发出的热能被远离通信线路。
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