公开(公告)号：US07897481B2

公开(公告)日：2011-03-01

申请号：US12329304

申请日：2008-12-05

Applicant: Wen-Chih Chiou ,  Weng-Jin Wu ,  Chen-Hua Yu

Inventor： Wen-Chih Chiou ,  Weng-Jin Wu ,  Chen-Hua Yu

IPC: H01L21/98

CPC classification number: H01L25/0657 ,  H01L25/50 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541

Abstract: A method of forming integrated circuits includes providing a wafer that includes a plurality of dies; aligning a first top die to a first bottom die in the wafer; recording a first destination position of the first top die after the first top die is aligned to the first bottom die; bonding the first top die onto the first bottom die; calculating a second destination position of a second top die using the first destination position; moving the second top die to the second destination position; and bonding the second top die onto a second bottom die without any additional alignment action.

Abstract translation: 一种形成集成电路的方法包括提供包括多个管芯的晶片; 将第一顶模与所述晶片中的第一底模对准; 在所述第一顶模与所述第一底模对准之后，记录所述第一顶模的第一目的位置; 将第一顶模连接到第一底模上; 使用所述第一目的地位置计算第二顶模的第二目的位置; 将第二顶部模具移动到第二目的地位置; 以及将所述第二顶模连接到第二底模上而没有任何附加的对准作用。

公开(公告)号：US07897310B2

公开(公告)日：2011-03-01

申请号：US11961482

申请日：2007-12-20

Applicant: Jin Wu ,  Linda L Ferrarese ,  Marc J Livecchi ,  John J Wilbert

Inventor： Jin Wu ,  Linda L Ferrarese ,  Marc J Livecchi ,  John J Wilbert

IPC: G03G5/047

CPC classification number: G03G5/062 ,  G03G5/0614 ,  G03G5/0696 ,  Y10S430/103

Abstract: A photoconductor that includes, for example, a supporting substrate, a photogenerating layer, and at least one charge transport layer comprised of at least one charge transport component, and wherein the at least one charge transport layer contains at least one phosphine oxide.

Abstract translation: 一种光电导体，其包括例如支撑衬底，光生成层以及由至少一个电荷传输组分组成的至少一个电荷传输层，并且其中所述至少一个电荷传输层含有至少一种氧化膦。

公开(公告)号：US07883991B1

公开(公告)日：2011-02-08

申请号：US12707752

申请日：2010-02-18

Applicant: Wen-Jin Wu ,  Wen-Chih Chiou ,  Shau-Lin Shue

Inventor： Wen-Jin Wu ,  Wen-Chih Chiou ,  Shau-Lin Shue

IPC: H01L21/30 ,  H01L21/46

CPC classification number: H01L21/6835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/6835 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/01019 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/1461 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/05552

Abstract: A method of bonding and detaching a temporary carrier used for handling a wafer during the fabrication of semiconductor devices includes bonding a wafer onto a carrier through a first adhesive layer and a second adhesive layer, in which the edge zone of the wafer and the carrier is covered by the first adhesive layer while the edge zone is not covered by the second adhesive layer. A wafer edge clean process is then performed to remove the first adhesive layer adjacent the edge of the wafer and expose the edge zone of the carrier, followed by removing the second adhesive layer from the carrier. After detaching the carrier from the wafer, the first adhesive layer remaining on the wafer is removed.

Abstract translation: 在半导体器件的制造期间，接合和分离用于处理晶片的临时载体的方法包括通过第一粘合剂层和第二粘合剂层将晶片接合到载体上，其中晶片和载体的边缘区域 被第一粘合剂层覆盖，而边缘区域不被第二粘合剂层覆盖。 然后进行晶片边缘清洁工艺以除去邻近晶片边缘的第一粘合剂层，并暴露载体的边缘区域，然后从载体上除去第二粘合剂层。 在从晶片上分离载体之后，去除残留在晶片上的第一粘合剂层。

公开(公告)号：US20110019414A1

公开(公告)日：2011-01-27

申请号：US12507088

申请日：2009-07-22

Applicant: Hua Jiang ,  Jin-Wu Zhang

Inventor： Hua Jiang ,  Jin-Wu Zhang

IPC: F21V21/00 ,  F21V19/00

CPC classification number: G09F9/33 ,  G09F9/3026

Abstract: A LED display device (100) includes a base (2) and at least one front door (1). A LED module (10) is secured in the front door. The front door is rotatablely engaged with the base, and can be opened at any angle from or intimately closed over the base. The LED display device supplies an easy access from the front for attachment or detachment of an LED module by opening the front door. It is easy and efficient for installations since a space from the back of the LED display device for maintenance is not necessary.

Abstract translation: LED显示装置（100）包括基座（2）和至少一个前门（1）。 LED模块（10）固定在前门中。 前门可旋转地与基座接合，并且可以以任何角度打开，或者在基座上以任何方式关闭。 LED显示装置通过打开前门，可以方便地从前面进入以连接或拆卸LED模块。 因为不需要用于维护的LED显示装置的后面的空间，所以安装是容易和有效的。

公开(公告)号：US07867675B2

公开(公告)日：2011-01-11

申请号：US11961561

申请日：2007-12-20

Applicant: Jin Wu ,  Linda L Ferrarese ,  Marc J Livecchi ,  Edward C Savage

Inventor： Jin Wu ,  Linda L Ferrarese ,  Marc J Livecchi ,  Edward C Savage

IPC: G03G5/047

CPC classification number: G03G5/0614 ,  G03G5/047 ,  G03G5/0631 ,  G03G5/064 ,  G03G5/0696 ,  Y10S430/103

Abstract: A photoconductor that includes, for example, a supporting substrate, a photogenerating layer, and at least one charge transport layer comprised of at least one charge transport component, and a nitrogen heterocyclic component such as a triazine.

Abstract translation: 包括例如支撑衬底，光生成层以及由至少一种电荷传输组分和氮杂环组分如三嗪组成的至少一个电荷传输层的光电导体。

公开(公告)号：US20100330305A1

公开(公告)日：2010-12-30

申请号：US12493535

申请日：2009-06-29

Applicant: Jin Wu

Inventor： Jin Wu

IPC: B41M5/40 ,  G03G15/14 ,  C08G77/14

CPC classification number: G03G15/161 ,  G03G15/162 ,  Y10T428/31507 ,  Y10T428/31511 ,  Y10T428/31551 ,  Y10T428/31663 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31786

Abstract: An intermediate transfer media, such as a belt, that includes a first supporting substrate, such as a polyimide substrate layer, and a second layer of a silicone containing polyamideimide layer. Also, the intermediate transfer media can include a silicone containing polyamideimide single layer.

Abstract translation: 包括诸如聚酰亚胺基底层的第一支撑基底和含硅酮聚酰胺酰亚胺层的第二层的中间转印介质，例如带。 此外，中间转印介质可以包括含硅氧烷的聚酰胺酰亚胺单层。

公开(公告)号：US20100327463A1

公开(公告)日：2010-12-30

申请号：US12878060

申请日：2010-09-09

Applicant: Chen-Hua YU ,  Wen-Chih CHIOU ,  Weng-Jin WU ,  Jean WANG

Inventor： Chen-Hua YU ,  Wen-Chih CHIOU ,  Weng-Jin WU ,  Jean WANG

IPC: H01L25/07

CPC classification number: H01L21/76898 ,  H01L23/3114 ,  H01L23/3185 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/73 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L24/91 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/08145 ,  H01L2224/13009 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/13025 ,  H01L2224/14051 ,  H01L2224/14135 ,  H01L2224/14155 ,  H01L2224/14179 ,  H01L2224/17517 ,  H01L2224/29011 ,  H01L2224/29013 ,  H01L2224/29035 ,  H01L2224/29075 ,  H01L2224/29116 ,  H01L2224/29124 ,  H01L2224/29147 ,  H01L2224/29169 ,  H01L2224/29184 ,  H01L2224/29186 ,  H01L2224/3003 ,  H01L2224/30155 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/81193 ,  H01L2224/83193 ,  H01L2224/9202 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06582 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/12041 ,  H01L2924/14 ,  Y10S438/926 ,  H01L2924/00 ,  H01L2924/053 ,  H01L2924/049 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A stacked structure includes a first substrate bonded to a second substrate such that a first pad structure of the first substrate contacts a second pad structure of the second substrate. A transistor gate is formed over the second substrate, and a first conductive structure extends through the second substrate and has a top surface that is substantially planar with a top surface of the second substrate. An interlayer dielectric (ILD) layer is disposed over the transistor gate, and a passivation layer is disposed over the ILD layer and includes a second pad structure that makes electrical contact with the second conductive structure. The ILD layer includes at least one contact structure that extends through the ILD layer and makes electrical contact with the transistor gate. A second conductive structure is disposed in the ILD layer and is at least partially disposed over a surface of the first conductive structure.

Abstract translation: 层叠结构包括结合到第二基板的第一基板，使得第一基板的第一焊盘结构接触第二基板的第二焊盘结构。 晶体管栅极形成在第二衬底上，并且第一导电结构延伸穿过第二衬底并且具有与第二衬底的顶表面基本平坦的顶表面。 在晶体管栅极上设置层间绝缘层（ILD）层，钝化层设置在ILD层之上，并且包括与第二导电结构电接触的第二焊盘结构。 ILD层包括延伸穿过ILD层并与晶体管栅极电接触的至少一个接触结构。 第二导电结构设置在ILD层中并且至少部分地设置在第一导电结构的表面上。

公开(公告)号：US07851112B2

公开(公告)日：2010-12-14

申请号：US11605522

申请日：2006-11-28

Applicant: Jin Wu ,  Kenny-Tuan Dinh ,  Kathleen M. Carmichael ,  Michael S. Roetker ,  Liang-Bih Lin

Inventor： Jin Wu ,  Kenny-Tuan Dinh ,  Kathleen M. Carmichael ,  Michael S. Roetker ,  Liang-Bih Lin

IPC: G03G15/02

CPC classification number: G03G5/051 ,  G03G5/0507 ,  G03G5/0578 ,  G03G5/0614

Abstract: A photoconductor containing an optional supporting substrate, a thiophosphate containing photogenerating layer, and a charge transport layer which includes a polyhedral oligomeric silsesquioxane (POSS)-containing material and an optional thiophosphate.

Abstract translation: 含有任选的支持底物，含有硫代磷酸盐的光生成层的光电导体和包含多面体低聚倍半硅氧烷（POSS）的材料和任选的硫代磷酸盐的电荷输送层。

公开(公告)号：US20100285304A1

公开(公告)日：2010-11-11

申请号：US12436600

申请日：2009-05-06

Applicant: Jin WU

Inventor： Jin WU

IPC: B32B5/16 ,  C08K3/04 ,  C08L27/12

CPC classification number: C09D127/12 ,  C09D127/16 ,  G03G15/2057 ,  Y10T428/1393 ,  Y10T428/25 ,  Y10T428/3154

Abstract: Exemplary embodiments provide a coating composition for an outermost layer of a fuser member that can include a plurality of fluorinated diamond-containing particles dispersed in an elastomeric matrix.

Abstract translation: 示例性实施方案提供了可以包含分散在弹性体基质中的多个含氟金刚石颗粒的定影器构件的最外层的涂料组合物。

公开(公告)号：US20100279103A1

公开(公告)日：2010-11-04

申请号：US12431801

申请日：2009-04-29

Applicant: Jin Wu

Inventor： Jin Wu

IPC: B32B5/16 ,  C01B31/06 ,  B32B27/04 ,  B32B9/00 ,  C08K3/04 ,  C09K3/00

CPC classification number: G03G15/162 ,  G03G2215/1623 ,  Y10T428/25 ,  Y10T428/2918 ,  Y10T428/2982 ,  Y10T428/2991 ,  Y10T428/30

Abstract: An intermediate transfer media, such as a belt, that includes a fluorinated nano diamond.

Abstract translation: 包括氟化纳米金刚石的中间转印介质，例如带。