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138 条记录 (耗时 0.047 秒)

    GAS DISTRIBUTION SHOWERHEAD WITH HIGH EMISSIVITY SURFACE
    93.
    发明申请
    GAS DISTRIBUTION SHOWERHEAD WITH HIGH EMISSIVITY SURFACE 审中-公开
    具有高功率表面的气体分配淋浴

    公开(公告)号：US20120052216A1

    公开(公告)日：2012-03-01

    申请号：US13154060

    申请日：2011-06-06

    申请人： Hiroji Hanawa ,  Kyawwin Jason Maung ,  Hua Chung ,  Jie Cui ,  David Bour ,  Wei-Yung Hsu ,  Liang-Yuh Chen

    发明人： Hiroji Hanawa ,  Kyawwin Jason Maung ,  Hua Chung ,  Jie Cui ,  David Bour ,  Wei-Yung Hsu ,  Liang-Yuh Chen

    IPC分类号： C23C16/48

    CPC分类号： C23C16/45565 ,  C23C16/45574 ,  C23C16/481 ,  C23C16/52

    摘要： Embodiments of the present invention provide methods and apparatus for surface coatings applied to process chamber components utilized in chemical vapor deposition processes. In one embodiment, the apparatus provides a showerhead apparatus comprising a body, a plurality of conduits extending through the body, each of the plurality of conduits having an opening extending to a processing surface of the body, and a coating disposed on the processing surface, the coating being about 50 microns to about 200 microns thick and comprising a coefficient of emissivity of about 0.8, an average surface roughness of about 180 micro-inches to about 220 micro-inches, and a porosity of about 15% or less.

    摘要翻译： 本发明的实施例提供了应用于化学气相沉积工艺中使用的处理腔室部件的表面涂层的方法和装置。 在一个实施例中，该装置提供一种喷头装置，其包括主体，延伸穿过主体的多个导管，多个导管中的每一个具有延伸到主体的处理表面的开口，以及设置在处理表面上的涂层， 该涂层为约50微米至约200微米厚，并且包括约0.8的发射率系数，约180微英寸至约220微英寸的平均表面粗糙度，以及约15％或更小的孔隙率。

    SEQUENTIAL DEPOSITION OF TANTALUM NITRIDE USING A TANTALUM-CONTAINING PRECURSOR AND A NITROGEN-CONTAINING PRECURSOR
    95.
    发明申请
    SEQUENTIAL DEPOSITION OF TANTALUM NITRIDE USING A TANTALUM-CONTAINING PRECURSOR AND A NITROGEN-CONTAINING PRECURSOR 审中-公开
    使用含TANTALUM的前体和含氮的前体的硝酸氮铵的顺序沉积

    公开(公告)号：US20110070730A1

    公开(公告)日：2011-03-24

    申请号：US12914937

    申请日：2010-10-28

    申请人： Wei Cao ,  Hua Chung ,  Vincent Ku ,  Ling Chen

    发明人： Wei Cao ,  Hua Chung ,  Vincent Ku ,  Ling Chen

    IPC分类号： H01L21/768

    CPC分类号： C23C16/4408 ,  C23C16/045 ,  C23C16/34 ,  C23C16/45557 ,  H01L21/28562

    摘要： Embodiments of the invention provide a method for forming tantalum nitride materials on a substrate by employing an atomic layer deposition (ALD) process. The method includes heating a tantalum precursor within an ampoule to a predetermined temperature to form a tantalum precursor gas and sequentially exposing a substrate to the tantalum precursor gas and a nitrogen precursor to form a tantalum nitride material. Thereafter, a nucleation layer and a bulk layer may be deposited on the substrate. In one example, a radical nitrogen compound may be formed from the nitrogen precursor during a plasma-enhanced ALD process. A nitrogen precursor may include nitrogen or ammonia. In another example, a metal-organic tantalum precursor may be used during the deposition process.

    摘要翻译： 本发明的实施例提供了一种通过采用原子层沉积（ALD）工艺在衬底上形成氮化钽材料的方法。 该方法包括将安瓿内的钽前体加热至预定温度以形成钽前体气体，并将基底依次暴露于钽前体气体和氮气前体以形成氮化钽材料。 此后，可以在基板上沉积成核层和体层。 在一个实例中，在等离子体增强的ALD工艺期间可以由氮前体形成自由基氮化合物。 氮前体可以包括氮或氨。 在另一个实例中，在沉积过程中可以使用金属 - 有机钽前体。

    GAS DISTRIBUTION SHOWERHEAD AND METHOD OF CLEANING
    96.
    发明申请
    GAS DISTRIBUTION SHOWERHEAD AND METHOD OF CLEANING 有权
    气体分配淋浴和清洁方法

    公开(公告)号：US20110052833A1

    公开(公告)日：2011-03-03

    申请号：US12870465

    申请日：2010-08-27

    申请人： HIROJI HANAWA ,  Kyawwin Maung ,  Hua Chung

    发明人： HIROJI HANAWA ,  Kyawwin Maung ,  Hua Chung

    IPC分类号： C23C16/00 ,  C23C16/513 ,  B08B7/00

    CPC分类号： C23C16/4405 ,  C23C16/4404 ,  C23C16/45574 ,  H01L21/67115

    摘要： During a deposition process, material may deposit not only on the substrate, but also on other chamber components. In a MOCVD chamber, one of those components is the gas distribution showerhead. The showerhead may be cleaned by bombarding the showerhead with radicals generated by a plasma that includes an inert gas and chlorine. In order to generate the plasma, the showerhead may be negatively biased or floating relative to the substrate support. The showerhead may comprise stainless steel and be coated with a ceramic coating.

    摘要翻译： 在沉积过程中，材料不仅可以沉积在基底上，而且沉积在其它腔室部件上。 在MOCVD室中，其中一个部件是气体分配喷头。 可以通过用包括惰性气体和氯的等离子体产生的自由基轰击喷头来清洁喷头。 为了产生等离子体，喷头可以相对于基板支撑物被负偏置或浮动。 喷头可以包括不锈钢并涂覆有陶瓷涂层。

    Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
    97.
    发明授权
    Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA 有权
    使用钽前体TAIMATA的含钽材料的原子层沉积

    公开(公告)号：US07241686B2

    公开(公告)日：2007-07-10

    申请号：US11061039

    申请日：2005-02-19

    申请人： Christophe Marcadal ,  Rongjun Wang ,  Hua Chung ,  Nirmalya Maity

    发明人： Christophe Marcadal ,  Rongjun Wang ,  Hua Chung ,  Nirmalya Maity

    IPC分类号： H01L21/44 ,  H01L21/07

    CPC分类号： H01L29/495 ,  C23C16/18 ,  C23C16/30 ,  C23C16/45553 ,  H01L21/28079 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76864 ,  H01L29/4958 ,  H01L29/517

    摘要： In one example of the invention, a method for depositing a tantalum-containing material on a substrate in a process chamber is provided which includes exposing the substrate to a tantalum precursor that contains TAIMATA and to at least one secondary precursor to deposit a tantalum-containing material during an atomic layer deposition (ALD) process. The ALD process is repeated until the tantalum-containing material is deposited having a predetermined thickness. Usually, the TAIMATA is preheated prior to pulsing the tantalum precursor into the process chamber. Subsequently, a metal layer, such as tungsten or copper, may be deposited on the tantalum-containing material. The tantalum-containing material may contain tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride, or tantalum oxynitride. The tantalum-containing material may be deposited as a barrier or adhesion layer within a via or as a gate electrode material within a source/drain device.

    摘要翻译： 在本发明的一个实例中，提供了一种用于在处理室中的衬底上沉积含钽材料的方法，其包括将衬底暴露于含有TAIMATA的钽前体和至少一种次级前体以沉积含钽的 材料在原子层沉积（ALD）过程中。 重复ALD工艺，直到含有预定厚度的含钽材料沉积。 通常，在将钽前体脉冲进入处理室之前，将TAIMATA预热。 随后，诸如钨或铜的金属层可以沉积在含钽材料上。 含钽材料可以包含钽，氮化钽，氮化钽，氮化硼，氮化钽或氮氧化钽。 含钽材料可以作为阻挡层或粘合层沉积在源极/漏极器件内的通孔内或栅极电极材料中。

    PROCESSING CHAMBER CONFIGURED FOR UNIFORM GAS FLOW
    99.
    发明申请
    PROCESSING CHAMBER CONFIGURED FOR UNIFORM GAS FLOW 失效
    加气室配置均匀气体流量

    公开(公告)号：US20070044719A1

    公开(公告)日：2007-03-01

    申请号：US11552727

    申请日：2006-10-25

    申请人： Vincent Ku ,  Ling Chen ,  Howard Grunes ,  Hua Chung

    发明人： Vincent Ku ,  Ling Chen ,  Howard Grunes ,  Hua Chung

    IPC分类号： H01L21/306 ,  C23C16/00

    CPC分类号： C23C16/45544 ,  C23C16/4409 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/4585

    摘要： An apparatus and method for performing uniform gas flow in a processing chamber is provided. In one embodiment, an apparatus is an edge ring that includes an annular body having an annular seal projecting therefrom is provided. The seal is coupled to a side of the annular body opposite a side adapted to seat on the substrate support. In another embodiment, a processing system is provided that includes a chamber body, a lid, a substrate support and a plurality of flow control orifices. The lid is disposed on the chamber body and defining an interior volume therewith. The substrate support is disposed in the interior volume and at least partially defines a processing region with the lid. The flow control orifices are disposed between the substrate support and the lid. The flow control orifices are adapted to control flow of gases exiting the processing region.

    摘要翻译： 提供了一种在处理室中进行均匀气体流动的装置和方法。 在一个实施例中，一种装置是一种边缘环，其包括具有从其突出的环形密封件的环形主体。 密封件联接到环形体的与适于安置在基板支撑件上的一侧相对的一侧。 在另一个实施例中，提供了一种处理系统，其包括室主体，盖，衬底支撑件和多个流量控制孔。 盖子设置在室主体上并且与其限定内部容积。 衬底支撑件设置在内部容积中并且至少部分地限定具有盖子的处理区域。 流量控制孔布置在基板支撑件和盖子之间。 流量控制孔适于控制离开处理区域的气体流。