公开(公告)号：US08795482B1

公开(公告)日：2014-08-05

申请号：US13572483

申请日：2012-08-10

申请人： Steven T. Mayer ,  Marshall R. Stowell ,  John S. Drewery ,  Richard S. Hill ,  Timothy M. Archer ,  Avishai Kepten

发明人： Steven T. Mayer ,  Marshall R. Stowell ,  John S. Drewery ,  Richard S. Hill ,  Timothy M. Archer ,  Avishai Kepten

IPC分类号： C25D5/02 ,  C25F3/16

CPC分类号： B23H5/08 ,  C25F3/16 ,  H01L21/02068 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/7684

摘要： Methods and apparatus are provided for planar metal plating on a workpiece having a surface with recessed regions and exposed surface regions; comprising the steps of: causing a plating accelerator to become attached to said surface including the recessed and exposed surface regions; selectively removing the plating accelerator from the exposed surface regions without performing substantial metal plating on the surface; and after removal of plating accelerator is at least partially complete, plating metal onto the surface, whereby the plating accelerator remaining attached to the surface increases the rate of metal plating in the recessed regions relative to the rate of metal plating in the exposed surface regions.

摘要翻译： 提供了用于在具有凹陷区域和暴露表面区域的表面的工件上进行平面金属电镀的方法和装置; 包括以下步骤：使电镀加速器附着到包括凹入和暴露的表面区域的所述表面; 选择性地从暴露的表面区域去除电镀加速器，而不在表面上进行实质的金属电镀; 在去除电镀促进剂至少部分完成后，将金属镀在表面上，由此保持附着在表面上的电镀加速剂相对于露出的表面区域中的金属电镀速率增加凹陷区域中的金属电镀速率。

公开(公告)号：US20140190529A1

公开(公告)日：2014-07-10

申请号：US13857883

申请日：2013-04-05

申请人： Kousik Ganesan ,  Shanthinath Ghongadi ,  Tariq Majid ,  Aaron Labrie ,  Steven T. Mayer

发明人： Kousik Ganesan ,  Shanthinath Ghongadi ,  Tariq Majid ,  Aaron Labrie ,  Steven T. Mayer

IPC分类号： H01L21/67 ,  H01L21/02

CPC分类号： H01L21/6708 ,  H01L21/02068 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/32134 ,  H01L21/67745 ,  H01L21/68735 ,  H01L21/68785

摘要： Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems provide the thin layer of pre-rinsing liquid before applying etchant at the edge bevel region of the wafer. The etchant is less diluted and diffuses faster through a thinned layer of rinsing liquid. An edge bevel removal embodiment involving that is particularly effective at reducing process time, narrowing the metal taper and allowing for subsequent chemical mechanical polishing, is disclosed.

摘要翻译： 描述了用于从半导体晶片的边缘斜面区域去除金属的化学蚀刻方法和相关模块。 在晶片的边缘斜面区域上施加蚀刻剂之前，该方法和系统提供了薄层的预漂洗液体。 蚀刻剂较少稀释，并通过稀薄的冲洗液层更快地扩散。 公开了一种边缘斜面去除实施例，其涉及在减少加工时间，使金属锥度变窄并允许随后的化学机械抛光方面特别有效。

公开(公告)号：US08603305B2

公开(公告)日：2013-12-10

申请号：US13051822

申请日：2011-03-18

申请人： Robert Rash ,  Richard Abraham ,  David W. Porter ,  Steven T. Mayer

发明人： Robert Rash ,  Richard Abraham ,  David W. Porter ,  Steven T. Mayer

IPC分类号： C25D17/00 ,  C25D21/16 ,  C25D21/12 ,  C25D7/12

CPC分类号： C25D5/08 ,  C25D5/006 ,  C25D17/00 ,  C25D17/002 ,  C25D21/04 ,  C25D21/06 ,  C25D21/14 ,  C25D21/18

摘要： An electrolyte, and particularly anolyte, may be circulated via an open loop having a pressure regulator, so that the pressure in the plating chamber is maintained at a constant (or substantially constant) value with respect to atmospheric pressure. In these embodiments, a pressure regulator is in fluid communication with the anode chamber.

公开(公告)号：US20130292254A1

公开(公告)日：2013-11-07

申请号：US13852767

申请日：2013-03-28

申请人： Santosh Kumar ,  Bryan L. Buckalew ,  Steven T. Mayer ,  Thomas Ponnuswamy ,  Chad Michael Hosack ,  Robert Rash ,  Lee Peng Chua ,  David Porter

发明人： Santosh Kumar ,  Bryan L. Buckalew ,  Steven T. Mayer ,  Thomas Ponnuswamy ,  Chad Michael Hosack ,  Robert Rash ,  Lee Peng Chua ,  David Porter

IPC分类号： C25D17/00

CPC分类号： B08B3/022 ,  B08B3/041 ,  C25D7/12 ,  C25D17/00 ,  C25D17/001 ,  C25D21/00 ,  C25D21/12 ,  H01L21/67051

摘要： Disclosed herein are methods of cleaning a lipseal and/or cup bottom of an electroplating device by removing metal deposits accumulated in prior electroplating operations. The methods may include orienting a nozzle such that it is pointed substantially at the inner circular edge of the lipseal and/or cup bottom, and dispensing a stream of cleaning solution from the nozzle such that the stream contacts the inner circular edge of the lipseal and/or cup bottom while they are being rotated, removing metal deposits. In some embodiments, the stream has a velocity component against the rotational direction of the lipseal and/or cup bottom. In some embodiments, the deposits may include a tin/silver alloy. Also disclosed herein are cleaning apparatuses for mounting in electroplating devices and for removing electroplated metal deposits from their lipseals and/or cup bottoms. In some embodiments, the cleaning apparatuses may include a jet nozzle.

摘要翻译： 本文公开了通过去除在现有电镀操作中积累的金属沉积物来清洁电镀装置的唇密封和/或杯底的方法。 所述方法可以包括使喷嘴定向成使得其基本上指向唇密封件和/或杯底部的内圆形边缘，并且从喷嘴分配清洁溶液流，使得流接触唇塞的内圆形边缘，并且 /或杯底，同时旋转，去除金属沉积物。 在一些实施例中，流具有抵抗唇密封和/或杯底的旋转方向的速度分量。 在一些实施例中，沉积物可以包括锡/银合金。 本文还公开了用于安装在电镀装置中并用于从其密封件和/或杯底部去除电镀金属沉积物的清洁装置。 在一些实施例中，清洁设备可以包括喷嘴。

公开(公告)号：US08530359B2

公开(公告)日：2013-09-10

申请号：US12462424

申请日：2009-08-04

申请人： Steven T. Mayer ,  David W. Porter

发明人： Steven T. Mayer ,  David W. Porter

IPC分类号： H01I21/302

CPC分类号： H01L21/6708 ,  C23F1/08 ,  C23F1/34 ,  C25F3/12 ,  H01L21/32115 ,  H01L21/32134

摘要： An apparatus for wet etching metal from a semiconductor wafer comprises a wafer holder for rotating a wafer and a plurality of nozzles for applying separate flow patterns of etching liquid to the surface of the wafer. The flow patterns impact the wafer in distinct band-like impact zones. The flow pattern of etching liquid from at least one nozzle is modulated during a total etching time control the cumulative etching rate in one local etch region relative to the cumulative etching rate in one or more other local etch regions. Some embodiments include a lower etch chamber and an upper rinse chamber separated by a horizontal splash shield. Some embodiments include a retractable vertical splash shield used to prevent splashing of etching liquid onto the inside walls of a treatment container. An etch-liquid delivery system includes a plurality of nozzle flow paths having corresponding nozzle flow resistances, and a plurality of drain flow paths having corresponding drain flow resistances. Nozzle flow resistances and drain flow resistances are matched so that switching the flow from a nozzle to a corresponding drain flow path does not change the flow rate of etching liquid through other nozzles. A non-wafer-contacting measuring device measures a metal thickness on a rotating semiconductor wafer during metal wet etching by immersing a plurality of electrodes in etching liquid in close proximity to the wafer surface of the rotating wafer and determining electrical resistance between a plurality of electrodes.

摘要翻译： 用于从半导体晶片湿式蚀刻金属的设备包括用于旋转晶片的晶片保持器和用于将分离的蚀刻液体的流动图案施加到晶片的表面的多个喷嘴。 流动模式影响晶片在不同的带状冲击区域。 在总腐蚀时间期间，调制来自至少一个喷嘴的蚀刻液体的流动模式，以控制一个局部蚀刻区域中相对于一个或多个其它局部蚀刻区域中的累积蚀刻速率的累积蚀刻速率。 一些实施例包括由水平防溅罩隔开的下蚀刻室和上冲洗室。 一些实施例包括用于防止蚀刻液体溅射到处理容器的内壁上的可伸缩垂直防溅屏蔽。 蚀刻液输送系统包括具有相应的喷嘴流动阻力的多个喷嘴流动路径和具有相应的漏极流动阻力的多个排出流动路径。 喷嘴流阻和排流阻力匹配，使得从喷嘴到相应的排水流路的流动不会改变通过其它喷嘴的蚀刻液的流量。 非晶片接触测量装置通过将多个电极浸入在旋转晶片的晶片表面附近的蚀刻液中来测量金属湿蚀刻期间的旋转半导体晶片上的金属厚度，并且确定多个电极之间的电阻 。

公开(公告)号：US08500983B2

公开(公告)日：2013-08-06

申请号：US12786329

申请日：2010-05-24

申请人： Thomas A. Ponnuswamy ,  Bryan Pennington ,  Clifford Berry ,  Bryan L. Buckalew ,  Steven T. Mayer

发明人： Thomas A. Ponnuswamy ,  Bryan Pennington ,  Clifford Berry ,  Bryan L. Buckalew ,  Steven T. Mayer

IPC分类号： C25D5/18 ,  C25D7/12

CPC分类号： C25D7/123 ,  C25D3/38 ,  C25D5/18 ,  C25D17/001

摘要： A plating protocol is employed to control plating of metal onto a wafer comprising a conductive seed layer. Initially, the protocol employs cathodic protection as the wafer is immersed in the plating solution. In certain embodiments, the current density of the wafer is constant during immersion. In a specific example, potentiostatic control is employed to produce a current density in the range of about 1.5 to 20 mA/cm2. The immersion step is followed by a high current pulse step. During bottom up fill inside the features of the wafer, a constant current or a current with a micropulse may be used. This protocol may protect the seed from corrosion while enhancing nucleation during the initial stages of plating.

摘要翻译： 使用电镀方案来控制金属镀在包含导电种子层的晶片上。 最初，当晶片浸入电镀溶液中时，协议采用阴极保护。 在某些实施例中，晶片的电流密度在浸入期间是恒定的。 在具体实例中，使用恒电位控制来产生约1.5至20mA / cm 2范围内的电流密度。 浸没步骤之后是高电流脉冲步骤。 在向下填充晶片的特征内部时，可以使用恒定电流或具有微脉冲的电流。 该方案可以保护种子免受腐蚀，同时在电镀初始阶段增强成核。

公开(公告)号：US08268154B1

公开(公告)日：2012-09-18

申请号：US12860787

申请日：2010-08-20

申请人： Steven T. Mayer ,  John S. Drewery ,  Richard S. Hill ,  Timothy M. Archer ,  Avishai Kepten

发明人： Steven T. Mayer ,  John S. Drewery ,  Richard S. Hill ,  Timothy M. Archer ,  Avishai Kepten

IPC分类号： C25D5/02

CPC分类号： B23H5/08 ,  C25F3/16 ,  H01L21/02068 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/7684

摘要： Methods and apparatus are provided for planar metal plating on a workpiece having a surface with recessed regions and exposed surface regions; comprising the steps of: causing a plating accelerator to become attached to said surface including the recessed and exposed surface regions; selectively removing the plating accelerator from the exposed surface regions without performing substantial metal plating on the surface; and after removal of plating accelerator is at least partially complete, plating metal onto the surface, whereby the plating accelerator remaining attached to the surface increases the rate of metal plating in the recessed regions relative to the rate of metal plating in the exposed surface regions.

摘要翻译： 提供了用于在具有凹陷区域和暴露表面区域的表面的工件上进行平面金属电镀的方法和装置; 包括以下步骤：使电镀加速器附着到包括凹入和暴露的表面区域的所述表面; 选择性地从暴露的表面区域去除电镀加速器，而不在表面上进行实质的金属电镀; 在去除电镀促进剂至少部分完成后，将金属镀在表面上，由此保持附着在表面上的电镀加速剂相对于露出的表面区域中的金属电镀速率增加凹陷区域中的金属电镀速率。

公开(公告)号：US08262871B1

公开(公告)日：2012-09-11

申请号：US12640992

申请日：2009-12-17

申请人： Steven T. Mayer ,  Shantinath Ghongadi ,  Kousik Ganesan ,  Zhian He ,  Jingbin Feng

发明人： Steven T. Mayer ,  Shantinath Ghongadi ,  Kousik Ganesan ,  Zhian He ,  Jingbin Feng

IPC分类号： C25B9/00 ,  C25D17/00

CPC分类号： C25D17/001 ,  C25D5/08 ,  C25D17/002 ,  C25D17/008

摘要： An apparatus for electroplating a layer of metal onto a work piece surface includes a membrane separating the chamber of the apparatus into a catholyte chamber and an anolyte chamber. In the catholyte chamber is a catholyte manifold region that includes a catholyte manifold and at least one flow distribution tube. The catholyte manifold and at least one flow distribution tube serve to mix and direct catholyte flow in the catholyte chamber. The provided configuration effectively reduces failure and improves the operational ranges of the apparatus.

摘要翻译： 用于将金属层电镀到工件表面上的装置包括将装置的室分离成阴极电解液室和阳极电解液室的膜。 在阴极电解液室中是阴极电解液歧管区域，其包括阴极电解液歧管和至少一个流量分布管。 阴极电解液歧管和至少一个分流管用于混合和引导阴极电解液在阴极电解液室中的流动。 所提供的配置有效地减少故障并改善设备的操作范围。

公开(公告)号：US20120181170A1

公开(公告)日：2012-07-19

申请号：US13432767

申请日：2012-03-28

申请人： Vinay Prabhakar ,  Bryan L. Buckalew ,  Kousik Ganesan ,  Shantinath Ghongadi ,  Zhian He ,  Steven T. Mayer ,  Robert Rash ,  Jonathan D. Reid ,  Yuichi Takada ,  James R. Zibrida

发明人： Vinay Prabhakar ,  Bryan L. Buckalew ,  Kousik Ganesan ,  Shantinath Ghongadi ,  Zhian He ,  Steven T. Mayer ,  Robert Rash ,  Jonathan D. Reid ,  Yuichi Takada ,  James R. Zibrida

IPC分类号： C25D17/08

CPC分类号： C25D17/001 ,  C25D7/123

摘要： Methods, apparatuses, and various apparatus components, such as base plates, lipseals, and contact ring assemblies are provided for reducing contamination of the contact area in the apparatuses. Contamination may happen during removal of semiconductor wafers from apparatuses after the electroplating process. In certain embodiments, a base plate with a hydrophobic coating, such as polyamide-imide (PAI) and sometimes polytetrafluoroethylene (PTFE), are used. Further, contact tips of the contact ring assembly may be positioned further away from the sealing lip of the lipseal. In certain embodiments, a portion of the contact ring assembly and/or the lipseal also include hydrophobic coatings.

摘要翻译： 提供了诸如基板，密封圈和接触环组件的方法，装置和各种装置部件，以减少设备中接触区域的污染。 在电镀工艺之后从设备中取出半导体晶片时可能发生污染。 在某些实施方案中，使用具有疏水涂层的基板，例如聚酰胺 - 酰亚胺（PAI）和有时聚四氟乙烯（PTFE）。 此外，接触环组件的接触尖端可以被定位成更远离唇密封的唇缘。 在某些实施方案中，接触环组件和/或唇膏的一部分还包括疏水性涂层。

公开(公告)号：US08147660B1

公开(公告)日：2012-04-03

申请号：US11731706

申请日：2007-03-30

申请人： Steven T. Mayer ,  Jonathan D. Reid

发明人： Steven T. Mayer ,  Jonathan D. Reid

IPC分类号： C25D17/10 ,  C25B9/00 ,  C25D5/00

CPC分类号： C25D17/002 ,  C25D17/001 ,  C25D17/005 ,  C25D17/008 ,  C25D17/06 ,  C25D17/10 ,  C25D17/12 ,  C25D21/12 ,  C25F7/00 ,  H01L21/2885 ,  H01L21/76877 ,  Y10S204/07

摘要： A semiconductive counter electrode covers a highly electronically conductive electric current buss. The semiconductive counter electrode is impervious to ion flow. A substrate holder is operable to hold a substrate and to form a thin fluid gap between the semiconductive counter electrode and a substrate surface. A thin liquid electrolyte layer is located in the thin fluid gap. A power supply connected to the electric current buss and a peripheral edge of a conductive substrate surface is able to generate a potential difference between the electric current buss and the semiconductive counter electrode, on one side of the electrolyte layer, and the substrate on the other side. The semiconductive counter electrode provides a substantial resistance in the various current flow paths between the electric current buss and the semiconductive counter electrode, on one side, and the conductive substrate surface, on the other, thereby enhancing control of current distribution.

摘要翻译： 半导体对电极覆盖高度电子导电的电流总线。 半导体对电极不受离子流的影响。 衬底保持器可操作以保持衬底并且在半导体对电极和衬底表面之间形成薄的流体间隙。 薄的液体电解质层位于薄的液体间隙中。 连接到电流母线的电源和导电衬底表面的外围边缘能够在电解质层的一侧上产生电流母线和半导体对电极之间的电位差，并且在另一侧上产生衬底 侧。 半导体对电极在电流总线和半导体对电极之间的一侧和导电基板表面上的各种电流流动路径中提供了显着的电阻，从而增强了电流分布的控制。