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    Memory cell of nonvolatile semiconductor memory
    91.
    发明授权
    Memory cell of nonvolatile semiconductor memory 有权
    非易失性半导体存储器的存储单元

    公开(公告)号：US07842996B2

    公开(公告)日：2010-11-30

    申请号：US12142373

    申请日：2008-06-19

    申请人： Shoko Kikuchi ,  Akira Takashima ,  Naoki Yasuda ,  Koichi Muraoka

    发明人： Shoko Kikuchi ,  Akira Takashima ,  Naoki Yasuda ,  Koichi Muraoka

    IPC分类号： H01L29/788 ,  H01L29/792

    CPC分类号： H01L29/7881 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/42324 ,  H01L29/513

    摘要： A memory cell of a nonvolatile semiconductor memory includes a semiconductor region, source/drain areas arranged separately from each other in the semiconductor region, a tunnel insulating film arranged on a channel region between the diffusion areas, a floating gate electrode arranged on the tunnel insulating film, an inter-electrode insulator arranged on the floating gate electrode, and a control gate electrode arranged on the inter-electrode insulator. The inter-electrode insulator includes lanthanoid-based metal Ln, aluminum Al, and oxygen O, and a composition ratio Ln/(Al+Ln) between the lanthanoid-based metal and the aluminum takes a value within the range of 0.33 to 0.39.

    摘要翻译： 非易失性半导体存储器的存储单元包括半导体区域，在半导体区域中彼此分开排列的源极/漏极区域，布置在扩散区域之间的沟道区域上的隧道绝缘膜，布置在隧道绝缘层上的浮置栅电极 布置在浮置栅电极上的电极间绝缘体和布置在电极间绝缘体上的控制栅电极。 电极间绝缘体包含镧系金属Ln，铝Al和氧O，镧系金属与铝之间的组成比Ln /（Al + Ln）为0.33〜0.39的范围。

    Semiconductor device and method for manufacturing a semiconductor device
    92.
    发明授权
    Semiconductor device and method for manufacturing a semiconductor device 有权
    半导体装置及其制造方法

    公开(公告)号：US07821059B2

    公开(公告)日：2010-10-26

    申请号：US12234197

    申请日：2008-09-19

    申请人： Masao Shingu ,  Shoko Kikuchi ,  Akira Takashima ,  Tsunehiro Ino ,  Koichi Muraoka

    发明人： Masao Shingu ,  Shoko Kikuchi ,  Akira Takashima ,  Tsunehiro Ino ,  Koichi Muraoka

    IPC分类号： H01L21/8247 ,  H01L29/788 ,  H01L29/792 ,  H01L29/78 ,  H01L27/115

    CPC分类号： H01L29/792 ,  H01L21/28282 ,  H01L21/31604 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66833

    摘要： In a semiconductor device, the side walls are made of SiO2, SiN or SiON, and the top insulating film or gate insulating film is made of an oxide including Al, Si, and metal element M so that the number ratio Si/M is set to no less than a number ratio Si/M at a solid solubility limit of SiO2 composition in a composite oxide including metal element M and Al and set to no more than a number ratio Si/M at the condition that the dielectric constant is equal to the dielectric constant of Al2O3 and so that the number ratio Al/M is set to no less than a number ratio Al/M where the crystallization of an oxide of said metal element M is suppressed due to the Al element and set to no more than a number ratio Al/M where the crystallization of the Al2O3 is suppressed due to the metal element M.

    摘要翻译： 在半导体器件中，侧壁由SiO 2，SiN或SiON制成，并且顶部绝缘膜或栅极绝缘膜由包括Al，Si和金属元素M的氧化物制成，使得Si / M的数量比设定 在包含金属元素M和Al的复合氧化物中SiO 2组成的固溶度极限的Si / M的数量比不小于Si / M，在介电常数等于 Al 2 O 3的介电常数和Al / M的数量比被设定为不小于Al / M的数量比，其中所述金属元素M的氧化物的结晶由于Al元素而被抑制，并且设定为不大于 由于金属元素M而抑制了Al 2 O 3的结晶化的数值比Al / M

    NONVOLATILE MEMORY ELEMENT AND METHOD OF MANUFACTURING THE SAME
    93.
    发明申请
    NONVOLATILE MEMORY ELEMENT AND METHOD OF MANUFACTURING THE SAME 审中-公开
    非易失性存储元件及其制造方法

    公开(公告)号：US20090206393A1

    公开(公告)日：2009-08-20

    申请号：US12388040

    申请日：2009-02-18

    申请人： Keiko Ariyoshi ,  Akira Takashima ,  Shoko Kikuchi ,  Koichi Muraoka

    发明人： Keiko Ariyoshi ,  Akira Takashima ,  Shoko Kikuchi ,  Koichi Muraoka

    IPC分类号： H01L29/792 ,  H01L21/28

    CPC分类号： H01L29/792 ,  H01L29/40117 ,  H01L29/4234 ,  H01L29/513

    摘要： A nonvolatile memory element includes a semiconductor region, a source region and a drain region provided in the semiconductor region, a tunnel insulating layer provided on the semiconductor region between the source region and the drain region, a charge storage layer provided on the tunnel insulating layer, a block insulating layer provided on the charge storage layer, and a control gate electrode provided on the block insulating layer. The charge storage layer includes one of an oxide, a nitride and an oxynitride, which contains at least one material selected from the group consisting of Hf, Al, Zr, Ti and a rare-earth metal, and is entirely or partially crystallized. The block insulating layer includes one of an oxide, an oxynitride, a silicate and an aluminate, which contains at least one rare-earth metal.

    摘要翻译： 非易失性存储元件包括设置在半导体区域中的半导体区域，源极区域和漏极区域，设置在源极区域和漏极区域之间的半导体区域上的隧道绝缘层，设置在隧道绝缘层上的电荷存储层 设置在电荷存储层上的块绝缘层和设置在块绝缘层上的控制栅电极。 电荷存储层包括氧化物，氮化物和氧氮化物中的一种，其含有选自Hf，Al，Zr，Ti和稀土金属中的至少一种材料，并且完全或部分结晶。 该块绝缘层包含含有至少一种稀土金属的氧化物，氮氧化物，硅酸盐和铝酸盐中的一种。

    COMPLEMENTARY SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    94.
    发明申请
    COMPLEMENTARY SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    补充半导体器件及其制造方法

    公开(公告)号：US20090114995A1

    公开(公告)日：2009-05-07

    申请号：US12200599

    申请日：2008-08-28

    申请人： Masamichi Suzuki ,  Masato Koyama ,  Yoshinori Tsuchiya ,  Hirotaka Nishino ,  Reika Ichihara ,  Akira Takashima

    发明人： Masamichi Suzuki ,  Masato Koyama ,  Yoshinori Tsuchiya ,  Hirotaka Nishino ,  Reika Ichihara ,  Akira Takashima

    IPC分类号： H01L27/08 ,  H01L21/3205

    CPC分类号： H01L21/823857 ,  H01L21/26506 ,  H01L21/31155 ,  H01L21/823842 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/7842 ,  H01L29/7846 ,  H01L29/785

    摘要： A complementary semiconductor device includes a semiconductor substrate, a first semiconductor region formed on a surface of the semiconductor substrate, a second semiconductor region formed on the surface of the semiconductor substrate apart from the first semiconductor region, an n-MIS transistor having a first gate insulating film including La and Al, formed on the first semiconductor region, and a first gate electrode formed on the gate insulating film, and a p-MIS transistor having a second gate insulating film including La and Al, formed on the second semiconductor region, and a second gate electrode formed on the gate insulating film, an atomic density ratio Al/La in the second gate insulating film being larger than an atomic density ratio Al/La in the first gate insulating film.

    摘要翻译： 互补半导体器件包括半导体衬底，形成在半导体衬底的表面上的第一半导体区域，形成在半导体衬底的离开第一半导体区域的表面上的第二半导体区域，具有第一栅极的n-MIS晶体管 形成在第一半导体区域上的包括La和Al的绝缘膜和形成在栅极绝缘膜上的第一栅电极和形成在第二半导体区上的具有包括La和Al的第二栅极绝缘膜的p-MIS晶体管， 以及形成在所述栅极绝缘膜上的第二栅电极，所述第二栅极绝缘膜中的原子密度比Al / La大于所述第一栅极绝缘膜中的原子密度比Al / La。

    Semiconductor memory device
    95.
    发明授权
    Semiconductor memory device 有权
    半导体存储器件

    公开(公告)号：US07518178B2

    公开(公告)日：2009-04-14

    申请号：US11531933

    申请日：2006-09-14

    申请人： Akira Takashima ,  Hiroshi Watanabe ,  Tatsuo Shimizu ,  Takeshi Yamaguchi

    发明人： Akira Takashima ,  Hiroshi Watanabe ,  Tatsuo Shimizu ,  Takeshi Yamaguchi

    IPC分类号： H01L29/788

    CPC分类号： H01L29/51 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42324

    摘要： A semiconductor memory device includes a semiconductor substrate, a first insulating film which is formed on the semiconductor substrate, a floating gate electrode which is formed on the first insulating film and made of a conductive metal oxide, a second insulating film which is formed on the floating gate electrode, has a relative dielectric constant of not less than 7.8, and is made of an insulating metal oxide of a paraelectric material, and a control gate electrode which is formed on the second insulating film and made of one of a metal and a conductive metal oxide.

    摘要翻译： 半导体存储器件包括半导体衬底，形成在半导体衬底上的第一绝缘膜，形成在第一绝缘膜上并由导电金属氧化物制成的浮栅，形成在第一绝缘膜上的第二绝缘膜 浮栅电极具有不小于7.8的相对介电常数，并且由绝缘材料的绝缘金属氧化物制成，并且控制栅电极形成在第二绝缘膜上，由金属和 导电金属氧化物。

    MEMORY CELL OF NONVOLATILE SEMICONDUCTOR MEMORY
    96.
    发明申请
    MEMORY CELL OF NONVOLATILE SEMICONDUCTOR MEMORY 有权
    非易失性半导体存储器的存储单元

    公开(公告)号：US20080315288A1

    公开(公告)日：2008-12-25

    申请号：US12142373

    申请日：2008-06-19

    申请人： Shoko KIKUCHI ,  Akira Takashima ,  Naoki Yasuda ,  Koichi Muraoka

    发明人： Shoko KIKUCHI ,  Akira Takashima ,  Naoki Yasuda ,  Koichi Muraoka

    IPC分类号： H01L29/788

    CPC分类号： H01L29/7881 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/42324 ,  H01L29/513

    摘要： A memory cell of a nonvolatile semiconductor memory includes a semiconductor region, source/drain areas arranged separately from each other in the semiconductor region, a tunnel insulating film arranged on a channel region between the diffusion areas, a floating gate electrode arranged on the tunnel insulating film, an inter-electrode insulator arranged on the floating gate electrode, and a control gate electrode arranged on the inter-electrode insulator. The inter-electrode insulator includes lanthanoid-based metal Ln, aluminum Al, and oxygen O, and a composition ratio Ln/(Al+Ln) between the lanthanoid-based metal and the aluminum takes a value within the range of 0.33 to 0.39.

    摘要翻译： 非易失性半导体存储器的存储单元包括半导体区域，在半导体区域中彼此分开排列的源极/漏极区域，布置在扩散区域之间的沟道区域上的隧道绝缘膜，布置在隧道绝缘层上的浮置栅电极 布置在浮置栅电极上的电极间绝缘体和布置在电极间绝缘体上的控制栅电极。 电极间绝缘体包含镧系金属Ln，铝Al和氧O，镧系金属与铝之间的组成比Ln /（Al + Ln）为0.33〜0.39的范围。

    INHIBITORS OF GLYCOSAMINOGLYCANS
    97.
    发明申请
    INHIBITORS OF GLYCOSAMINOGLYCANS 审中-公开
    糖蛋白酶抑制剂

    公开(公告)号：US20080153752A1

    公开(公告)日：2008-06-26

    申请号：US11951623

    申请日：2007-12-06

    申请人： Akira Takashima ,  Mark E. Mummert

    发明人： Akira Takashima ,  Mark E. Mummert

    IPC分类号： A61K38/16 ,  C07K14/00 ,  A61P29/00 ,  A61P35/00

    CPC分类号： C07K7/08 ,  A61K38/08 ,  A61K38/10 ,  C07K14/00 ,  C07K14/78

    摘要： The present invention provides peptide derivatives with a specific affinity for glycosaminoglycan molecules. These peptide derivatives include multimers as well as chemically modified peptides and may be prepared by a variety of methods. The peptides of the invention have numerous functions, including but not limited to use as inhibitors of glycosaminoglycan-mediated signaling events and targeting agents. Peptides of the invention may be directed against any glycosaminoglycan, including hyaluronic acid, chondroitin sulfate A, chondroitin sulfate C, dermatan sulfate, heparin, keratan sulfate, keratosulfate, chitin, chitosan 1, and chitosan 2. The peptide derivatives of the invention also have therapeutic uses in the treatment and prevention of diseases involving inflammatory diseases, cancer, and cancer metastasis, autoimmune diseases, etc.

    摘要翻译： 本发明提供对糖胺聚糖分子具有特异亲和力的肽衍生物。 这些肽衍生物包括多聚体以及化学修饰的肽，并且可以通过各种方法制备。 本发明的肽具有许多功能，包括但不限于用作糖胺聚糖介导的信号传导事件和靶向剂的抑制剂。 本发明的肽可以针对任何糖胺聚糖，包括透明质酸，硫酸软骨素A，硫酸软骨素C，硫酸皮肤素，肝素，硫酸角质素，角硫素，壳多糖，壳聚糖1和壳聚糖2.本发明的肽衍生物也具有 用于治疗和预防涉及炎性疾病，癌症和癌症转移，自身免疫疾病等疾病的治疗用途

    Unique dendritic cell-associated C-type lectins, dectin-1 and dectin-2; compositions and uses thereof
    99.
    发明授权
    Unique dendritic cell-associated C-type lectins, dectin-1 and dectin-2; compositions and uses thereof 失效

    公开(公告)号：US07129039B2

    公开(公告)日：2006-10-31

    申请号：US10201060

    申请日：2002-07-23

    申请人： Kiyoshi Ariizumi ,  Akira Takashima

    发明人： Kiyoshi Ariizumi ,  Akira Takashima

    IPC分类号： C12Q1/00 ,  G01N33/53

    CPC分类号： C07K14/7056 ,  A01K2217/075 ,  A61K38/00 ,  A61K2039/5154 ,  C07K2319/00

    摘要： Novel genes expressed selectively by long-term dendritic cell (DC) lines (XS series) from murine epidermis which retain important features of resident epidermal Langerhans cells (LC) are provided. These genes encode distinct type II membrane-integrated polypeptides, each consisting of a cytoplasmic domain, a transmembrane domain, an extracellular connecting domain, and a C-terminal extracellular domain that exhibits significant homology to the carbohydrate recognition domains (CRD) of C-type lectins. Expression of both genes is highly restricted to cells of DC lineage (including epidermal LC). Thus, these genes encode new, DC-specific members of the C-type lectin family, now termed “DC-associated C-type lectin-1 and -2” (dectin-1 and dectin-2). Two isoforms of the dectin-1 molecule and five isoforms of the dectin-2 molecule have also been identified. The invention further provides His-tagged fusion proteins comprising 6× histidine and the extracellular domain of dectin-1 or dectin-2. Also provided are antibodies raised to synthetic peptides designed from the dectin-1 sequence or to the His-tagged fusion proteins described.