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162 条记录 (耗时 0.034 秒)

    Use of conductive adhesive to form temporary electrical connections for use in TCA (temporary chip attach) applications
    93.
    发明授权
    Use of conductive adhesive to form temporary electrical connections for use in TCA (temporary chip attach) applications 失效
    使用导电胶来形成用于TCA（临时芯片连接）应用的临时电气连接

    公开(公告)号：US06528352B1

    公开(公告)日：2003-03-04

    申请号：US09981269

    申请日：2001-10-17

    申请人： Raymond A. Jackson ,  John U. Knickerbocker ,  Thomas E. Lombardi ,  Amy B. Ostrander

    发明人： Raymond A. Jackson ,  John U. Knickerbocker ,  Thomas E. Lombardi ,  Amy B. Ostrander

    IPC分类号： H01L2144

    CPC分类号： G01R1/0408

    摘要： A structure and method for converting a standard ceramic carrier into a temporary chip attach carrier, wherein the device comprises a substrate, a plurality of metal vias interspersed in the substrate, a carrier layer further comprising a cavity dam with a plurality of holes filled with conductive adhesive. The process of forming the temporary chip attach carrier comprises applying a secondary layer further comprising a plurality of holes on a substrate, applying conductive adhesive in the holes, curing the adhesive, placing a chip containing C4 solder bumps onto the secondary layer, applying a force onto the chip, testing and burning-in the secondary layer, removing the force from the chip, separating the chip from the secondary layer, and then re-using the secondary layer.

    摘要翻译： 一种用于将标准陶瓷载体转换成临时芯片连接载体的结构和方法，其中所述装置包括基板，散布在所述基板中的多个金属通孔，还包括具有多个填充有导电 胶粘剂。 形成临时芯片连接载体的过程包括在基板上施加进一步包括多个孔的二次层，在孔中施加导电粘合剂，固化粘合剂，将含有C4焊料凸块的芯片放置在次级层上，施加力 在芯片上进行测试并在二级层中燃烧，去除芯片上的力，将芯片与次级层分开，然后重新使用二级层。

    Coaxial connection apparatus and method of attachment
    96.
    发明授权
    Coaxial connection apparatus and method of attachment 失效
    同轴连接装置及其附件方法

    公开(公告)号：US06302732B1

    公开(公告)日：2001-10-16

    申请号：US09460888

    申请日：1999-12-14

    申请人： Mark Budman ,  Mario J. Interrante ,  John U. Knickerbocker

    发明人： Mark Budman ,  Mario J. Interrante ,  John U. Knickerbocker

    IPC分类号： H01R905

    CPC分类号： H01R9/0515 ,  H01R13/03

    摘要： A coaxial connector having a conductive copper wire core plated with a layer of gold with the layer of gold surrounded by a dielectric layer, such as polyimide. The layer of polyimide is surrounded by a conductive shielding layer, such as copper, with a tin-plated layer surrounding it. Connection of the coaxial connector at one end to adjacent signal and ground pads is achieved by laser ablation to expose a section of gold sufficient to accommodate the terminal pad pitch and allow wire bonding to the signal pad. Connection of the conductive shielding layer to the ground pad is achieved by hot tip soldering. Connection at the opposite end of the coaxial connector uses the same process.

    摘要翻译： 一种同轴连接器，其具有镀有金层的导电铜线芯，该金属层由诸如聚酰亚胺之类的电介质层围绕的金属层。 聚酰亚胺层被诸如铜的导电屏蔽层包围，其周围具有镀锡层。 通过激光烧蚀来实现一端与相邻信号和接地焊盘的同轴连接器的连接，以暴露足以容纳端子焊盘间距并允许引线键合到信号焊盘的一部分金。 通过热尖端焊接实现导电屏蔽层与接地焊盘的连接。 同轴连接器相对端的连接使用相同的过程。

    Semiconductor device and method of making semiconductor device
    99.
    发明授权
    Semiconductor device and method of making semiconductor device 有权
    半导体器件及制造半导体器件的方法

    公开(公告)号：US08405226B2

    公开(公告)日：2013-03-26

    申请号：US13495195

    申请日：2012-06-13

    申请人： John U. Knickerbocker ,  Chirag S. Patel

    发明人： John U. Knickerbocker ,  Chirag S. Patel

    IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L23/5286 ,  H01L21/486 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49827 ,  H01L23/50 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/16225 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/12044 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/00

    摘要： A method of fabricating a semiconductor device including forming a micro-chip comprising a thinned-wafer having one or more components fabricated thereon disposed between a carrier and a semiconductor chip, the micro-chip being electrically connected to the semiconductor chip under a higher consumption macro of the semiconductor chip and including a thickness which is less than a thickness of the semiconductor chip, forming an interconnect between the semiconductor chip and the carrier, forming an interconnect between the micro-chip and the semiconductor chip, and forming an interconnect between the micro-chip and the carrier. The micro-chip includes a thinned micro-chip having a thickness of less than 20 microns and the semiconductor chip includes plural semiconductor chips formed as a chip stack. The micro-chip includes a plurality of micro-chips formed on the plural semiconductor chips, such that the semiconductor device is a three-dimensional integrated circuit.

    摘要翻译： 一种制造半导体器件的方法，包括形成包括在其上制造的一个或多个部件的薄化晶片的微型芯片，所述薄片晶片设置在载体和半导体芯片之间，所述微芯片在较高功耗的宏观下电连接到所述半导体芯片 并且包括小于半导体芯片的厚度的厚度，在半导体芯片和载体之间形成互连，在微芯片和半导体芯片之间形成互连，并且在微型芯片和微型芯片之间形成互连 芯片和载体。 微芯片包括厚度小于20微米的薄化微芯片，半导体芯片包括形成为芯片堆叠的多个半导体芯片。 微芯片包括形成在多个半导体芯片上的多个微芯片，使得半导体器件是三维集成电路。