公开(公告)号：US20140190403A1

公开(公告)日：2014-07-10

申请号：US14206558

申请日：2014-03-12

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Kenji Fujito ,  Tadao Hashimoto ,  Shuji Nakamura

IPC: C30B7/10

CPC classification number: C30B7/105 ,  C30B7/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1096

Abstract: A method of growing high-quality, group-III nitride, bulk single crystals. The group III-nitride bulk crystal is grown in an autoclave in supercritical ammonia using a source material or nutrient that is a group III-nitride polycrystals or group-III metal having a grain size of at least 10 microns or more and a seed crystal that is a group-III nitride single crystal. The group III-nitride polycrystals may be recycled from previous ammonothermal process after annealing in reducing gas at more then 600° C. The autoclave may include an internal chamber that is filled with ammonia, wherein the ammonia is released from the internal chamber into the autoclave when the ammonia attains a supercritical state after the heating of the autoclave, such that convection of the supercritical ammonia transfers source materials and deposits the transferred source materials onto seed crystals, but undissolved particles of the source materials are prevented from being transferred and deposited on the seed crystals.

Abstract translation: 生长高品质，III族氮化物，大块单晶的方法。 III族氮化物本体晶体在超临界氨的高压釜中使用源材料或营养物生长，所述源材料或营养物是具有至少10微米或更小的晶粒尺寸的III族氮化物多晶体或III族金属，以及晶种， 是III族氮化物单晶。 III族氮化物多晶体可以在600℃以上的还原气体中退火之后从先前的氨热处理中回收。高压釜可以包括填充有氨的内部室，其中氨从内部室释放到高压釜 当氨在高压釜加热后达到超临界状态时，超临界氨的对流转移源材料并将转移的原材料沉积到晶种上，而防止源材料的未溶解颗粒被转移并沉积在 晶种。

公开(公告)号：US08653503B2

公开(公告)日：2014-02-18

申请号：US13718152

申请日：2012-12-18

Applicant: The Regents of the University of California

Inventor： Roy B. Chung ,  Zhen Chen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L29/06

CPC classification number: H01L33/30 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/34333

Abstract: A high-power and high-efficiency light emitting device with emission wavelength (λpeak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.

Abstract translation: 制造了从280nm到360nm范围内的发射波长（lambdapeak）的大功率和高效发光器件。 新器件结构使用在非极性或半极性体积GaN衬底上生长的非极性或半极性AlInN和AlInGaN合金。

公开(公告)号：US20130126828A1

公开(公告)日：2013-05-23

申请号：US13718152

申请日：2012-12-18

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Roy B. Chung ,  Zhen Chen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/30

CPC classification number: H01L33/30 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/34333

Abstract: A high-power and high-efficiency light emitting device with emission wavelength (λpeak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.

Abstract translation: 制造了从280nm到360nm范围内的发射波长（lambdapeak）的大功率和高效发光器件。 新器件结构使用在非极性或半极性体积GaN衬底上生长的非极性或半极性AlInN和AlInGaN合金。

公开(公告)号：US20130100978A1

公开(公告)日：2013-04-25

申请号：US13659191

申请日：2012-10-24

Applicant: The Regents of the University of California

Inventor： Matthew T. Hardy ,  Po Shan Hsu ,  Steven P. DenBaars ,  James Stephen Speck ,  Shuji Nakamura

IPC: H01L29/201 ,  H01S5/343 ,  H01L33/04

CPC classification number: H01L29/205 ,  B82Y20/00 ,  H01L29/2003 ,  H01L33/06 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2013 ,  H01S5/2031 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2301/173

Abstract: An (Al,In,B,Ga)N based device including a plurality of (Al,In,B,Ga)N layers overlying a semi-polar or non-polar GaN substrate, wherein the (Al,In,B,Ga)N layers include at least a defected layer, a blocking layer, and an active region, the blocking layer is between the active region and the defected layer of the device, and the blocking layer has a larger band gap than surrounding layers to prevent carriers from escaping the active region to the defected layer. One or more (AlInGaN) device layers are above and/or below the (Al,In,B,Ga)N layers. Also described is a nonpolar or semipolar (Al,In,B,Ga)N based optoelectronic device including at least an active region, wherein stress relaxation (Misfit Dislocation formation) is at heterointerfaces above and/or below the active region.

Abstract translation: 一种（Al，In，B，Ga）N基装置，其包括覆盖半极性或非极性GaN衬底的多个（Al，In，B，Ga）N层，其中（Al，In，B，Ga ）N层至少包括缺陷层，阻挡层和有源区，阻挡层位于器件的有源区和缺陷层之间，并且阻挡层具有比周围层更大的带隙以防止载流子 从有源区域转移到缺陷层。 一个或多个（AlInGaN）器件层位于（Al，In，B，Ga）N层的上方和/或下方。 还描述了至少包括活性区域的非极性或半极性（Al，In，B，Ga）N基光电器件，其中应力松弛（不匹配位错形成）位于有源区上方和/或下方的异质界面处。

公开(公告)号：US20240145625A1

公开(公告)日：2024-05-02

申请号：US18546484

申请日：2022-02-28

Applicant: The Regents of the University of California

Inventor： David Hwang ,  Matthew S. Wong ,  Shuji Nakamura

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/24 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L33/007 ,  H01L33/24 ,  H01L33/325

Abstract: A device including an activated p-type layer comprising a III-Nitride based Mg-doped layer grown by vapor phase deposition or a growth method different from MBE. The p-type layer is activated through a sidewall of the p-type layer after the removal of defects from the sidewall thereby increasing a hole concentration in the p-type layer. In one or more examples, the device includes an active region between a first n-type layer and the p-type layer; a second n-type layer on the p-type layer; and a tunnel junction between the second n-type layer and the p-type layer, and the activated p-type layer has a hole concentration characterized by a current density of at least 100 Amps per centimeter square flowing between the first n-type layer and the second n-type layer in response to a voltage of 4 volts or less applied across the first n-type layer and the second n-type layer.

公开(公告)号：US20230369538A1

公开(公告)日：2023-11-16

申请号：US18309994

申请日：2023-05-01

Applicant: The Regents of the University of California

Inventor： Michael Wang ,  Christian J. Zollner ,  Yifan Yao ,  Michael Iza ,  Shuji Nakamura

IPC: H01L33/06 ,  H01L33/22 ,  H01L33/00

CPC classification number: H01L33/06 ,  H01L33/22 ,  H01L33/0075 ,  H01L33/0008

Abstract: A multilayer structure comprising regions of higher aluminum (Al) composition as compared to adjacent layers, in combination with an undulating active region and controlled buffer layer crystal quality, promotes radiative recombination and improves the performance and efficiency of ultraviolet (UV) or far-UV light-emitting diodes (LEDs), laser diode (LDs), or other light emitting devices.

公开(公告)号：US20230307579A1

公开(公告)日：2023-09-28

申请号：US18041269

申请日：2021-08-11

Applicant: The Regents of the University of California

Inventor： Panpan Li ,  Hongjian Li ,  Michael Iza ,  Shuji Nakamura ,  Steven P. DenBaars

IPC: H01L33/32 ,  H01L33/00 ,  H01L33/22 ,  H01L25/16 ,  H01L27/15

CPC classification number: H01L33/32 ,  H01L33/0016 ,  H01L33/22 ,  H01L25/167 ,  H01L33/007 ,  H01L27/156

Abstract: A method to fabricate micro-size III-nitride light emitting diodes (μLEDs) with an epitaxial tunnel junction comprised of a p+GaN layer, an InxAlyGazN insertion layer, and an n+GaN layer, grown using metalorganic chemical vapor deposition (MOCVD), wherein the μLEDs have a low forward the GaN layers, which reduces a depletion width of the tunnel junction and increases the tunneling probability. The μLEDs are fabricated with dimensions that vary from 25 to 10,000 μm2. It was found that the InxAlyGazN insertion layer can reduce the forward voltage at 20 A/cm2 by at least 0.6 V. The tunnel junction μLEDs with an n-type and p-type InxAlyGazN insertion layer had a low forward voltage at 20 A/cm2 that was very stable. At dimensions smaller than 1600 μm2, the low forward voltage is less than 3.2 V.

公开(公告)号：US11552452B2

公开(公告)日：2023-01-10

申请号：US15880999

申请日：2018-01-26

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Po Shan Hsu ,  Kathryn M. Kelchner ,  Robert M. Farrell ,  Daniel A. Haeger ,  Hiroaki Ohta ,  Anurag Tyagi ,  Shuji Nakamura ,  Steven P. DenBaars ,  James S. Speck

IPC: H01S5/00 ,  H01S5/343 ,  B82Y20/00 ,  H01L21/02 ,  H01S5/32 ,  H01L31/0304 ,  H01L31/036 ,  H01L31/0735 ,  H01L33/00 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32 ,  H01S5/20 ,  H01S5/22 ,  H01S5/30 ,  H01S5/34

Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15

公开(公告)号：US20200212258A1

公开(公告)日：2020-07-02

申请号：US16561366

申请日：2019-09-05

Applicant: The Regents of the University of California ,  Japan Science and Technology Agency

Inventor： Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

IPC: H01L33/22 ,  H01L33/60 ,  H01L33/32 ,  H01L33/00

Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

公开(公告)号：US10685835B2

公开(公告)日：2020-06-16

申请号：US15773864

申请日：2016-11-01

Applicant: The Regents of the University of California

Inventor： Benjamin P. Yonkee ,  Erin C. Young ,  John T. Leonard ,  Tal Margalith ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L21/00 ,  H01L29/00 ,  H01L31/18 ,  H01L33/00 ,  H01L21/02 ,  H01L29/15 ,  H01L29/20 ,  H01L29/207 ,  H01L29/36 ,  H01L29/885 ,  H01L31/0304 ,  H01L31/0352 ,  H01L33/06 ,  H01L33/32 ,  H01L29/88 ,  H01L33/04

Abstract: A III-nitride tunnel junction with a modified p-n interface, wherein the modified p-n interface includes a delta-doped layer to reduce tunneling resistance. The delta-doped layer may be doped using donor atoms comprised of Oxygen (O), Germanium (Ge) or Silicon (Si); acceptor atoms comprised of Magnesium (Mg) or Zinc (Zn); or impurities comprised of Iron (Fe) or Carbon (C).