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147 条记录 (耗时 0.041 秒)

    Reservoir for liquid cooling systems used to provide make-up fluid and trap gas bubbles
    92.
    发明申请
    Reservoir for liquid cooling systems used to provide make-up fluid and trap gas bubbles 审中-公开
    用于液体冷却系统的水箱用于提供补充液和捕集气泡

    公开(公告)号：US20080013278A1

    公开(公告)日：2008-01-17

    申请号：US11823525

    申请日：2007-06-27

    申请人： Fredric Landry ,  Bruce Conway ,  Richard Brewer ,  Norman Chow ,  Peng Zhou ,  Tien-Chih (Eric) Lin

    发明人： Fredric Landry ,  Bruce Conway ,  Richard Brewer ,  Norman Chow ,  Peng Zhou ,  Tien-Chih (Eric) Lin

    IPC分类号： H05K7/20

    CPC分类号： H05K7/20272 ,  F28D15/00 ,  G06F1/20 ,  G06F2200/201

    摘要： A fluid compensation apparatus is configured to provide replacement fluid to a fluid-based cooling loop, while removing dissolved gas or gas in gross bubbles from the cooling loop. Removal or reduction of gas from the cooling loop reduces or prevents pump vapor lock. The removed gas is retained within the fluid compensation apparatus. The fluid compensation apparatus is configured to prevent the trapped gas from being re-introduced to the fluid-based cooling loop, regardless of the orientation of the fluid compensation apparatus. Additionally, the fluid compensation apparatus is configured to remove gas from and add fluid to the cooling loop with limited or no pressure drop between the inlet port and the outlet port of the fluid compensation apparatus. As a result, the pump does not require additional power to compensate for such a pressure differential.

    摘要翻译： 液体补偿装置被配置为向基于流体的冷却回路提供更换流体，同时从冷却回路中除去大气泡中的溶解气体或气体。 从冷却回路中去除或还原气体会降低或防止泵蒸气锁定。 去除的气体保留在流体补偿装置内。 流体补偿装置被配置为防止被捕获的气体被重新引入基于流体的冷却回路，而与流体补偿装置的取向无关。 此外，流体补偿装置构造成在流体补偿装置的入口和出口之间有限或没有压力降，从而从流体中除去气体并向流体补充流体。 因此，泵不需要额外的功率来补偿这种压力差。

    Resistive random access memory with electric-field strengthened layer and manufacturing method thereof
    94.
    发明授权
    Resistive random access memory with electric-field strengthened layer and manufacturing method thereof 有权
    具有电场强化层的电阻随机存取存储器及其制造方法

    公开(公告)号：US09099178B2

    公开(公告)日：2015-08-04

    申请号：US13457035

    申请日：2012-04-26

    申请人： Wei Zhang ,  Lin Chen ,  Peng Zhou ,  Qingqing Sun ,  Pengfei Wang

    发明人： Wei Zhang ,  Lin Chen ,  Peng Zhou ,  Qingqing Sun ,  Pengfei Wang

    IPC分类号： H01L29/86 ,  H01L27/24 ,  G11C13/00 ,  H01L45/00

    CPC分类号： G11C13/0007 ,  G11C2213/55 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1616

    摘要： This invention belongs to the technical field of memories and specifically relates to a resistive random access memory structure with an electric-field strengthened layer and a manufacturing method thereof. The resistive random access memory in the present invention can include a top electrode, a bottom electrode and a composite layer which is placed between the top electrode and the bottom electrode and have a first resistive switching layer and a second resistive switching and electric-field strengthened layer; the second resistive switching and electric-field strengthened layer cab be adjacent to the first resistive switching layer and have a dielectric constant lower than that of the first resistive switching layer. The electric-field distribution in the RRAM unit is adjustable.

    摘要翻译： 本发明属于存储器的技术领域，具体涉及一种具有电场强化层的电阻随机存取存储器结构及其制造方法。 本发明的电阻式随机存取存储器可以包括顶电极，底电极和复合层，它放置在顶电极和底电极之间，并具有第一电阻开关层和第二电阻开关和电场强化 层; 第二电阻开关和电场强化层驾驶室与第一电阻式开关层相邻，其介电常数低于第一电阻式开关层的介电常数。 RRAM单元中的电场分布是可调的。

    Devices and methods for dispensing a cryogenic fluid
    95.
    发明授权
    Devices and methods for dispensing a cryogenic fluid 有权
    用于分配低温流体的装置和方法

    公开(公告)号：US08647337B2

    公开(公告)日：2014-02-11

    申请号：US12489875

    申请日：2009-06-23

    申请人： R. Sam Niedbala ,  Lincoln C. Young ,  Peng Zhou

    发明人： R. Sam Niedbala ,  Lincoln C. Young ,  Peng Zhou

    IPC分类号： A61B18/18 ,  F17C7/02 ,  F17C13/00

    CPC分类号： A61B18/0218 ,  A61B2018/0275

    摘要： A dispensing head for dispensing a cryogenic fluid may comprise a flow passage configured to be placed in flow communication with a reservoir containing a cryogenic fluid, the flow passage defining a flow passage inlet opening configured to receive the cryogenic fluid from the reservoir, and a flow passage outlet opening opposite the flow passage inlet opening. The dispensing head may further comprise a dispensing member configured to dispense the cryogenic fluid, the dispensing member defining a lumen having a lumen inlet opening and a lumen outlet opening; and at least one porous member disposed in the flow passage, the at least one porous member being configured as a primary flow regulation mechanism to limit a flow rate of the cryogenic fluid as it flows from the reservoir to the lumen outlet opening.

    摘要翻译： 用于分配低温流体的分配头可以包括流动通道，其构造成与包含低温流体的储存器流动连通，流动通道限定被构造成从储存器接收低温流体的流动通道入口开口， 通道出口与流路入口相对。 分配头还可以包括配置成分配低温流体的分配构件，分配构件限定具有管腔入口和管腔出口的内腔; 以及至少一个多孔构件，其设置在所述流动通道中，所述至少一个多孔构件被构造为主流量调节机构，以限制所述低温流体从储存器流到管腔出口开口的流量。

    Thermal interlock for battery pack, device, system and method
    96.
    发明授权
    Thermal interlock for battery pack, device, system and method 有权
    电池组，装置，系统和方法的热互锁

    公开(公告)号：US08641273B2

    公开(公告)日：2014-02-04

    申请号：US12938284

    申请日：2010-11-02

    申请人： Peng Zhou ,  Paul Tsao ,  David Kevin Pariseau

    发明人： Peng Zhou ,  Paul Tsao ,  David Kevin Pariseau

    IPC分类号： G01K11/06 ,  G01N17/00 ,  H01M10/50 ,  H02H5/04

    CPC分类号： H01M10/486 ,  H01M2200/105 ,  H01M2200/106

    摘要： Faulty battery detecting and locating devices and methods are able to detect and locate a faulty battery cell. The device applies an energy to a sensing member, such as a polymeric tube containing at least two polymer-coated and twisted electric wires. Heat that is generated by a faulty battery triggers an electric communication between the two electric wires by melting at least a portion of the polymer. The resulting change in resistance between the two electric wires is used to detect and locate a faulty battery.

    摘要翻译： 电池检测和定位装置和方法有故障的电池单元能够检测和定位故障。 该装置将能量施加到感测构件，例如包含至少两个聚合物涂覆和扭绞电线的聚合物管。 由故障电池产生的热量通过熔化聚合物的至少一部分而触发两条电线之间的电连通。 由此产生的两根电线之间的电阻变化用于检测和定位故障电池。

    Method of making fusible links
    97.
    发明授权
    Method of making fusible links 有权
    制作易熔链接的方法

    公开(公告)号：US08486283B2

    公开(公告)日：2013-07-16

    申请号：US12938298

    申请日：2010-11-02

    申请人： Peng Zhou ,  Paul Tsao

    发明人： Peng Zhou ,  Paul Tsao

    IPC分类号： H01B13/00 ,  C23F1/04

    CPC分类号： H05K13/00 ,  H01H11/00 ,  H01H69/022 ,  H01H85/02 ,  H01H85/046 ,  H01H2085/025 ,  H01M2/26 ,  H01M2200/10 ,  H05K1/0293 ,  Y10T29/49107 ,  Y10T29/49108 ,  Y10T29/49117

    摘要： Methods of fabricating the fusible link are directed to processing a multi-layer clad foil having a first layer suitable for forming a fusible link and a second layer suitable for forming one or more welding pads. In some embodiments, the first layer is an aluminum layer and the second layer is a nickel layer. A two-step etching process or a single step etching process is performed on the clad foil to form an etched clad foil having multiple tabs made of the second layer used as current collector conductor pads and battery cell conductor pads, and one or more tabs made of the first layer that form aluminum conductors. The aluminum conductors are shaped and sized to form aluminum fusible conductors during either the etching process or a subsequent stamping process. A single fusible link or an array of fusible links can be formed.

    摘要翻译： 制造可熔连接件的方法涉及处理具有适于形成可熔连接件的第一层的多层复合箔和适用于形成一个或多个焊接焊盘的第二层。 在一些实施例中，第一层是铝层，第二层是镍层。 在复合箔上进行两步蚀刻工艺或单步蚀刻工艺以形成具有由用作集流体导体焊盘和电池单元导体焊盘的第二层制成的多个接片的蚀刻的复合箔，并且制成一个或多个接片 形成铝导体的第一层。 铝导体的形状和尺寸在蚀刻工艺或随后的冲压工艺期间形成铝熔丝导体。 可以形成单个可熔连接件或可熔连接件阵列。

    Methods of Protecting Elevated Polysilicon Structures During Etching Processes
    98.
    发明申请
    Methods of Protecting Elevated Polysilicon Structures During Etching Processes 有权
    在蚀刻过程中保护高架多晶硅结构的方法

    公开(公告)号：US20130149851A1

    公开(公告)日：2013-06-13

    申请号：US13314270

    申请日：2011-12-08

    申请人： Liang Li ,  Huang Liu ,  Alex See ,  Soh Yun Siah ,  Xue Song Rao ,  Peng Zhou

    发明人： Liang Li ,  Huang Liu ,  Alex See ,  Soh Yun Siah ,  Xue Song Rao ,  Peng Zhou

    IPC分类号： H01L21/28

    CPC分类号： H01L27/11534 ,  H01L21/28273

    摘要： Disclosed herein are various methods of protecting elevated polysilicon structures during etching processes. In one example, the method includes forming a layer stack above a semiconducting substrate for a memory device, forming a protective mask layer above the layer stack of the memory device and performing at least one etching process to define a gate electrode for a transistor while the protective mask is in position above the layer stack for the memory device.

    摘要翻译： 本文公开了在蚀刻工艺期间保护升高的多晶硅结构的各种方法。 在一个示例中，该方法包括在用于存储器件的半导体衬底之上形成层堆叠，在存储器件的层堆叠之上形成保护掩模层，并执行至少一个蚀刻工艺以限定晶体管的栅电极，而 保护罩位于存储器件的层堆叠之上。