公开(公告)号：US5772757A

公开(公告)日：1998-06-30

申请号：US475170

申请日：1995-06-07

Applicant: Junji Saito

Inventor： Junji Saito

IPC: C30B23/08 ,  C23C16/44 ,  C23C16/455 ,  C30B25/02 ,  C30B25/14 ,  H01L21/203

CPC classification number: C23C16/4551 ,  C23C16/4401 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/45574 ,  C30B25/02 ,  C30B25/14 ,  C30B29/40

Abstract: The present invention relates to molecr beam epitaxy, in particular, to a gas source molecular beam epitaxy apparatus using compound gases as sources of semiconductor component elements, and also relates to a method for growing semiconductor crystal using this apparatus. It is an object of the present invention to prevent an epitaxial layer from being contaminated with organic compounds produced by decomposition of source gases. It is another object to grow a high purity semiconductor crystal at a growth rate high enough for practical applications. To achieve the above objects, in a growth apparatus in accordance with the present invention, the ambient gas pressure is maintained at the order of 10.sup.-5 -10.sup.-3 Torr during a growing process. The distance between a substrate on which semiconductor is to be grown and a gas effusion cell made shorter than the mean free path of source gases and by-products produced by decomposition of the source gases, wherein the mean free path is determined from the above ambient gas pressure. Moreover, a heat insulation plate is provided between the gas effusion cell and the substrate, wherein the heat insulation plate has apertures corresponding to gas effusion cells. Furthermore, as source gases, amino compounds are used such as trimethyl amine galane ((CH.sub.3).sub.3 N.multidot.GaH.sub.3), triethyl amine alane ((C.sub.2 H.sub.5).sub.3 N), tris-dimethylamino arsine (As(N(CH.sub.3).sub.2).sub.3), trimethyl amine ilane ((CH.sub.3).sub.3 N.multidot.InH.sub.3), and tris-diethylamino phosphine (P(N(C.sub.2 H.sub.5).sub.2).sub.3), wherein the amino compounds include elements composing compound semiconductor such as GaAs and InP.

Abstract translation: 本发明涉及分子束外延，特别涉及使用复合气体作为半导体元件元件的源的气体源分子束外延装置，还涉及使用该装置生长半导体晶体的方法。 本发明的目的是防止外延层被源气体分解产生的有机化合物污染。 另一个目的是以实际应用足够高的生长速度生长高纯度半导体晶体。 为了实现上述目的，在根据本发明的生长装置中，环境气体压力在生长过程中维持在10-5-10-3乇的数量级。 在其上生长半导体的基板与比原始气体的平均自由程和源气体分解产生的副产物短的气体注入单元之间的距离，其中平均自由程是根据上述环境 气压。 此外，在气体注入单元和基板之间设置绝热板，其中隔热板具有对应于气体积聚单元的孔。 此外，作为源气体，使用氨基化合物，例如三甲基胺加仑（（CH 3）3 N x GaH 3），三乙胺烷（（C 2 H 5）3 N），三 - 二甲基氨基胂（As（N（CH 3）2）3），三甲胺 （（CH 3）3 N x InH 3）和三 - 二乙基氨基膦（P（N（C 2 H 5）2）3），其中氨基化合物包括构成化合物半导体如GaAs和InP的元素。

公开(公告)号：US5698062A

公开(公告)日：1997-12-16

申请号：US533383

申请日：1995-09-25

Applicant: Takao Sakamoto ,  Kazuhiro Tahara ,  Kenji Momose ,  Kosuke Imafuku ,  Shosuke Endo ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose

Inventor： Takao Sakamoto ,  Kazuhiro Tahara ,  Kenji Momose ,  Kosuke Imafuku ,  Shosuke Endo ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose

IPC: C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/509 ,  C23C16/517 ,  H01J37/32 ,  C23F1/02 ,  C23C14/34 ,  C23C16/00

CPC classification number: C23C16/45565 ,  C23C16/4405 ,  C23C16/4407 ,  C23C16/4483 ,  C23C16/4485 ,  C23C16/4557 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/3244

Abstract: A plasma treatment apparatus comprising a chamber earthed, a vacuum pump for exhausting the chamber, a suscepter on which a wafer is mounted, a shower electrode arranged in the chamber, opposing to the suscepter, a unit for supplying plasma generating gas to the wafer on the suscepter through the shower electrode, a first radio frequency power source for adding radio frequency voltage, which has a first frequency f.sub.1, to both of the suscepter and the shower electrode, a second radio frequency power source for adding radio frequency voltage, which has a second frequency f.sub.2 higher than the first frequency f.sub.1, at least to one of the suscepter and the shower electrode, a transformer whose primary side is connected to the first radio frequency power source and whose secondary side to first and second electrodes, and a low pass filter arranged in a circuit on the secondary side of the transformer, and serving to allow radio frequency voltage, which has the first frequency f.sub.1, to pass through it but to cut off radio frequency voltage, which has the second frequency f.sub.2, while plasma is being generated.

Abstract translation: 一种等离子体处理装置，包括接地室，用于排出室的真空泵，安装有晶片的可动装置，布置在室中的与电容器相对的喷淋电极，用于向晶片供给等离子体产生气体的单元 通过淋浴电极的检测器，将具有第一频率f1的射频电压的第一射频电源提供给所述吸入器和淋浴电极，所述第二射频电源用于增加射频电压，所述第二射频电源具有 比第一频率f1高的第二频率f2，至少一个至少一个所述电动机和所述淋浴电极，其一次侧连接到所述第一射频电源并且其次级侧连接到所述第一和第二电极的变压器和低 布置在变压器的次级侧的电路中，并且用于使具有第一频率f1的射频电压通过 而是在等离子体产生时切断具有第二频率f2的射频电压。

公开(公告)号：US5653808A

公开(公告)日：1997-08-05

申请号：US693721

申请日：1996-08-07

Applicant: Joseph H. MacLeish ,  Robert D. Mailho ,  Mahesh K. Sanganeria

Inventor： Joseph H. MacLeish ,  Robert D. Mailho ,  Mahesh K. Sanganeria

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C30B25/10 ,  C23C16/00

CPC classification number: C23C16/4557 ,  C23C16/45508 ,  C23C16/45519 ,  C23C16/45591 ,  C23C16/4584 ,  C23C16/46 ,  C30B25/08 ,  C30B25/10

Abstract: A CVD reactor includes separate reaction and pressure chambers, where the reaction chamber is contained within and isolates reactant gases from the pressure chamber. The reactor also includes a gas injection system which injects process gas(es) into the reaction chamber in a somewhat vertical direction through a bottom surface of the reaction chamber. The gas injection system injects hydrogen or other appropriate gas in a vertical direction through the bottom surface of the reaction chamber. The flow of hydrogen or other appropriate gas is intermediate the flow of the process gas(es) and a surface of the reaction chamber, thereby re-directing the process gas flow parallel to the top surface of a wafer therein. In this manner, the reaction chamber does not require a long entry length for the process gas(es). This flow of hydrogen or other suitable gas also minimizes undesirable deposition on the surface of the reaction chamber.

Abstract translation: CVD反应器包括单独的反应室和压力室，其中反应室被包含在并分离来自压力室的反应气体。 反应器还包括气体注入系统，其通过反应室的底表面沿着稍微垂直的方向将工艺气体注入反应室。 气体注入系统通过反应室的底表面沿垂直方向注入氢气或其它合适的气体。 氢或其它合适气体的流动介于工艺气体和反应室的表面之间，从而将工艺气体流平行于晶片的顶表面重新引导。 以这种方式，反应室对于处理气体不需要长的进入长度。 这种氢气或其它合适气体的流动也使反应室表面上不期望的沉积最小化。

公开(公告)号：US5462014A

公开(公告)日：1995-10-31

申请号：US200655

申请日：1994-02-23

Applicant: Nobuyoshi Awaya ,  Yoshinobu Arita

Inventor： Nobuyoshi Awaya ,  Yoshinobu Arita

IPC: C23C16/18 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/00

CPC classification number: C23C16/4557 ,  C23C16/18 ,  C23C16/4482 ,  C23C16/45565

Abstract: Gold or copper is grown on a substrate by a chemical vapor deposition method using a .beta.-ketonato type metal complex of gold or copper as a starting material and introducing the starting material to the substrate using as a carrier gas a mixed gas composed of hydrogen and a substance which can bond to the starting material in a state where electron is donated from the substance to the starting material to form a molecular compound.

Abstract translation: 金或铜通过化学气相沉积法以金或铜的β-酮酮型金属络合物作为起始材料生长在衬底上，并将起始材料作为载气引入到衬底中，所述混合气体由氢和 在从物质向原料供给电子以形成分子化合物的状态下可以结合原料的物质。

公开(公告)号：US5458689A

公开(公告)日：1995-10-17

申请号：US384389

申请日：1995-02-03

Applicant: Junji Saito

Inventor： Junji Saito

IPC: C30B23/08 ,  C23C16/44 ,  C23C16/455 ,  C30B25/02 ,  C30B25/14 ,  H01L21/203 ,  C23C16/00

CPC classification number: C23C16/4551 ,  C23C16/4401 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/45574 ,  C30B25/02 ,  C30B25/14 ,  C30B29/40

Abstract: The present invention relates to molecr beam epitaxy, in particular, to a gas source molecular beam epitaxy apparatus using compound gases as sources of semiconductor component elements, and also relates to a method for growing semiconductor crystal using this apparatus. It is an object of the present invention to prevent an epitaxial layer from being contaminated with organic compounds produced by decomposition of source gases. It is another object to grow a high purity semiconductor crystal at a growth rate high enough for practical applications. To achieve the above objects, in a growth apparatus in accordance with the present invention, the ambient gas pressure is maintained at the order of 10.sup.-5 -10.sup.-3 Torr during a growing process. The distance between a substrate on which semiconductor is to be grown and a gas effusion cell made shorter than the mean free path of source gases and by-products produced by decomposition of the source gases, wherein the mean free path is determined from the above ambient gas pressure. Moreover, a heat insulation plate is provided between the gas effusion cell and the substrate, wherein the heat insulation plate has apertures corresponding to gas effusion cells. Furthermore, as source gases, amino compounds are used such as trimethyl amine galane ((CH.sub.3).sub.3 N.GaH.sub.3), triethyl amine alane ((C.sub.2 H.sub.5).sub.3 N) , tris-dimethylamino arsine (As (N (CH.sub.3).sub.2).sub.3) , trimethyl amine ilane ((CH.sub.3).sub.3 N.InH.sub.3), and tris-diethylamino phosphine (P (N (C.sub.2 H.sub.5).sub.2).sub.3) , wherein the amino compounds include elements composing compound semiconductor such as GaAs and InP.

Abstract translation: 本发明涉及分子束外延，特别涉及使用复合气体作为半导体元件元件的源的气体源分子束外延装置，还涉及使用该装置生长半导体晶体的方法。 本发明的目的是防止外延层被源气体分解产生的有机化合物污染。 另一个目的是以实际应用足够高的生长速度生长高纯度半导体晶体。 为了实现上述目的，在根据本发明的生长装置中，环境气体压力在生长过程中维持在10-5-10-3乇的数量级。 在其上生长半导体的基板与比原始气体的平均自由程和源气体分解产生的副产物短的气体注入单元之间的距离，其中平均自由程是根据上述环境 气压。 此外，在气体注入单元和基板之间设置绝热板，其中隔热板具有对应于气体积聚单元的孔。 此外，作为源气体，使用氨基化合物，例如三甲基胺加仑（（CH 3）3 N·GaH 3），三乙基胺甲烷（（C 2 H 5）3 N），三 - 二甲基氨基胂（As（N（CH 3）2）3） （（CH 3）3 N·InH 3）和三 - 二乙基氨基膦（P（N（C 2 H 5）2）3），其中氨基化合物包括构成化合物半导体如GaAs和InP的元素。

公开(公告)号：US5453124A

公开(公告)日：1995-09-26

申请号：US261650

申请日：1994-06-17

Applicant: Mehrdad M. Moslehi ,  Cecil J. Davis ,  Robert T. Matthews

Inventor： Mehrdad M. Moslehi ,  Cecil J. Davis ,  Robert T. Matthews

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  C23C16/00

CPC classification number: C23C16/45574 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/45576 ,  C23C16/52

Abstract: A programmable multizone fluids injector for use in single-wafer semiconductor processing equipment including an injector having a plurality of orifices therein which are divided into a number of separate zones or areas. These zones or areas are connected by means of appropriate passageways and conduits to a source of process fluids. Each of the separate conduits has at least one flow control device located therein for independently controlling the amounts and ratios of process fluids flowing into each zone. The fluid control devices are responsive to input signals so that the fluid flow rates from the orifices can maintain a desired flow pattern within the process chamber to suit the individual needs of a particular fabrication processs.

Abstract translation: 一种可用于单晶片半导体处理设备的可编程多区域流体注入器，包括其中具有多个孔的注射器，其被分成多个单独的区域或区域。 这些区域或区域通过适当的通道和管道连接到工艺流体源。 每个分离的管道具有位于其中的至少一个流量控制装置，用于独立地控制流入每个区域的工艺流体的量和比例。 流体控制装置响应于输入信号，使得来自孔口的流体流速可以在处理室内保持期望的流动模式，以适应特定制造过程的个体需要。

公开(公告)号：US5252366A

公开(公告)日：1993-10-12

申请号：US991502

申请日：1992-12-16

Applicant: Brian S. Ahern ,  David W. Weyburne

Inventor： Brian S. Ahern ,  David W. Weyburne

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/48 ,  C23C16/54 ,  C23C16/46

CPC classification number: C23C16/45574 ,  C23C16/45563 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/481 ,  C23C16/54

Abstract: An actively cooled effuser for a vapor deposition reactor is placed in very close proximity to a substrate. The actively cooled effuser has combinations of gas directing plates, cooling plates and isolation plates attached together. Reactants and coolant are input into the stack of plates so formed. Selective heating of the substrate surface may occur through the use of heating lamps. Multiple units of the actively cooled effuser and heating lamps may be used in the reactor to form multiple layers on the substrate. The cooling plate has a cooling channel within a few thousandths of an inch of the output side of the stack. The presence of the cooling plates allows the effuser to be placed in very close proximity to the selectively heated substrate.

Abstract translation: 用于气相沉积反应器的主动冷却的高效液体放置在非常靠近基底的位置。 主动冷却的流量计具有连接在一起的气体导向板，冷却板和隔离板的组合。 反应物和冷却剂被输入到如此形成的板堆中。 可以通过使用加热灯来选择性地加热基板表面。 可以在反应器中使用多个单元的主动冷却的热量和加热灯，以在基板上形成多个层。 冷却板具有在堆叠的输出侧的千分之几英寸内的冷却通道。 冷却板的存在允许将絮凝物放置在与选择性加热的基底非常接近的位置。

公开(公告)号：US5102689A

公开(公告)日：1992-04-07

申请号：US570238

申请日：1990-08-17

Applicant: Peter K. Bachmann ,  Hans Lydtin ,  Jacques Warnier

Inventor： Peter K. Bachmann ,  Hans Lydtin ,  Jacques Warnier

IPC: C23C16/26 ,  C23C16/27 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46

CPC classification number: C23C16/4557 ,  C23C16/271 ,  C23C16/45568

Abstract: Method of depositing microcrystalline solid bodies from the gas phase by means of Chemical Vapor Deposition (CVD) in which the solid particles are deposited on a substrate heated to a temperature ranging between 450.degree. and 1200.degree. C. at a pressure ranging between 10.sup.-5 and 1 bar and at a directed gas flow, in which method the reactant gas is passed through a porous intermediate body having a thickness of between 2 and 30 mm of a material suitable for use at temperatures up to 2500.degree. C., which intermediate body is present in the zone having the maximum energy content within the reactor, while the reactant gas is excited in said intermediate body, whereafter the solid particles are deposited on the substrate.

Abstract translation: 通过化学气相沉积（CVD）从气相沉积微晶固体的方法，其中将固体颗粒沉积在加热到450至1200℃温度的基板上，压力范围为10-5 和1巴，并以定向气流，在该方法中，反应气体通过厚度为2至30mm的多孔中间体，该材料适合于在高达2500℃的温度下使用，该中间体 存在于反应器内具有最大能量含量的区域中，同时反应气体在所述中间体中被激发，之后固体颗粒沉积在基底上。

公开(公告)号：US20240068096A1

公开(公告)日：2024-02-29

申请号：US18199223

申请日：2023-05-18

Applicant: Applied Materials, Inc.

Inventor： Anantha K. SUBRAMANI ,  Seyyed Abdolreza FAZELI ,  Yang GUO ,  Chandrashekara BAGINAGERE ,  Ramcharan SUNDAR ,  Steven MOSBRUCKER ,  John LEE ,  Yiyang WAN ,  Shumao ZHANG ,  Dhritiman Subha KASHYAP ,  Azhar ALI M.A

IPC: C23C16/455 ,  C23C16/505

CPC classification number: C23C16/4557 ,  C23C16/505

Abstract: In some embodiments, a showerhead assembly includes a heated showerhead having a heater plate and a gas distribution plate coupled together; an ion filter spaced from the heated showerhead; a spacer ring in contact between the heated showerhead and the ion filter; a remote plasma region between the heated showerhead and the ion filter; an upper isolator spaced from the spacer ring and supported on the ion filter; a sealing ring fastened to the heated showerhead sealing against the upper isolator and pushing the upper isolator against the ion filter; a gap between a bottom of the gas distribution plate and a top of the ion filter, the gap being in fluid communication with the remote plasma region; a first passage extending through the heater plate; and a second passage in communication with the first passage and extending through the gas distribution plate, the second passage extending to the gap.

公开(公告)号：US20240042463A1

公开(公告)日：2024-02-08

申请号：US18227279

申请日：2023-07-27

Applicant: TES CO., LTD

Inventor： Kyung-Ho JANG ,  Byeong-Ho YUN ,  Min-Wook KANG

IPC: B05B1/00 ,  B05C5/02 ,  C23C16/455

CPC classification number: B05B1/005 ,  B05C5/0275 ,  B05C5/0225 ,  C23C16/45565 ,  C23C16/4557

Abstract: The present disclosure relates to a showerhead assembly and a substrate processing apparatus, and more particularly to a showerhead assembly and a substrate processing apparatus including a ceramic heater that heats a substrate and by which hole processing is freely performed in a relatively high temperature process.