公开(公告)号：US20170346480A1

公开(公告)日：2017-11-30

申请号：US15421405

申请日：2017-01-31

申请人： IXYS Corporation

发明人： Kyoung Wook Seok

IPC分类号： H03K17/10

CPC分类号： H03K17/107 ,  H03K17/08122 ,  H03K17/102

摘要： A High-Voltage Stacked Transistor Circuit (HVSTC) includes a stack of power transistors coupled in series between a first terminal and a second terminal. The HVSTC also has a control terminal for turning on an off the power transistors of the stack. All of the power transistors of the stack turn on together, and turn off together, so that the overall stack operates like a single transistor having a higher breakdown voltage. Each power transistor, other than the one most directly coupled to the first terminal, has an associated bipolar transistor. In a static on state of the HVSTC, the bipolar transistors are off. The associated power transistors can therefore be turned on. In a static off state of the HVSTC, the bipolar transistors are conductive (in one example, in the reverse active mode) in such a way that they keep their associated power transistors off.

公开(公告)号：US20170324407A1

公开(公告)日：2017-11-09

申请号：US15597029

申请日：2017-05-16

申请人： Peregrine Semiconductor Corporation

发明人： Jianhua Lu ,  Peter Bacon ,  Raul Inocencio Alidio ,  Vikram Sekar

IPC分类号： H03K17/687 ,  H04B1/00 ,  H03K17/693 ,  H04B1/44 ,  H03K17/10

CPC分类号： H03K17/687 ,  H03K17/102 ,  H03K17/693 ,  H04B1/006 ,  H04B1/44

摘要： An RF switching device having distributed shunt switches distributed along transmission lines to improve RF bandwidth as well as the signal isolation of the device. The shunt switches may be physically positioned on both sides of the transmission lines to keep an integrated circuit (IC) design essentially symmetrical so as to provide predictable and reliable operational characteristics. Some embodiments include stacked FET shunt switches and series switches to tolerate high voltages. In some embodiments, the gate resistor for each FET shunt switch is divided into two or more portions.

公开(公告)号：US20170324263A1

公开(公告)日：2017-11-09

申请号：US15658242

申请日：2017-07-24

申请人： Navitas Semiconductor, Inc.

发明人： Daniel Marvin Kinzer ,  Santosh Sharma ,  Ju Zhang

IPC分类号： H02J7/00 ,  H01L27/088 ,  H01L29/20 ,  H02M1/088 ,  H02M3/157 ,  H03K17/10 ,  H03K3/356 ,  H03K3/012 ,  H01L25/07 ,  H02M3/158 ,  H03K19/0185 ,  H02M1/00

CPC分类号： H02J7/0052 ,  H01L23/49503 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/528 ,  H01L23/62 ,  H01L25/072 ,  H01L27/0248 ,  H01L27/088 ,  H01L27/0883 ,  H01L29/1033 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41758 ,  H01L2924/00 ,  H01L2924/0002 ,  H02M1/088 ,  H02M3/155 ,  H02M3/157 ,  H02M3/1584 ,  H02M3/1588 ,  H02M2001/0048 ,  H03K3/012 ,  H03K3/356017 ,  H03K17/102 ,  H03K19/018507 ,  Y02B40/90 ,  Y02B70/1466 ,  Y02B70/1483

摘要： An electronic circuit is disclosed. The electronic circuit includes a GaN substrate, a first power supply node on the substrate, an output node, a signal node, and an output component on the substrate, where the output component is configured to generate a voltage at the output node based at least in part on a voltage at the signal node. The electronic circuit also includes a capacitor coupled to the signal node, where, the capacitor is configured to selectively cause the voltage at the signal node to be greater than the voltage of the first power supply node, such that the output component causes the voltage at the output node to be substantially equal to the voltage of the first power supply node.

公开(公告)号：US09813054B2

公开(公告)日：2017-11-07

申请号：US14898095

申请日：2014-06-10

申请人： General Electric Technology GmbH

发明人： Colin Charnock Davidson

IPC分类号： H02M5/458 ,  H03K17/16 ,  H03K17/0814 ,  H03K17/10 ,  H02M5/45 ,  H02M7/68 ,  H03K17/66 ,  H03K17/687

CPC分类号： H03K17/161 ,  H02M5/45 ,  H02M5/458 ,  H02M7/68 ,  H03K17/08144 ,  H03K17/105 ,  H03K17/16 ,  H03K17/66 ,  H03K17/687

摘要： A semiconductor switching string includes a plurality of series-connected semiconductor switching assemblies, each having a main semiconductor switching element that includes first and second connection terminals. The main semiconductor switching element also has an auxiliary semiconductor switching element electrically connected between the first and second connection terminals. Each semiconductor switching assembly also includes a control unit configured to switch on a respective auxiliary semiconductor switching element to selectively create an alternative current path between the first and second connection terminals whereby current is diverted to flow through the alternative current path to reduce the voltage across the corresponding main semiconductor switching element. The or each control unit is further configured to switch on the auxiliary semiconductor switching element when the voltage across the corresponding main semiconductor switching element differs from a voltage reference derived from the voltage across all of the main semiconductor switching elements.

公开(公告)号：US09780778B2

公开(公告)日：2017-10-03

申请号：US14883499

申请日：2015-10-14

申请人： Peregrine Semiconductor Corporation

发明人： Mark L. Burgener ,  James S. Cable

IPC分类号： H04B1/28 ,  H01L29/76 ,  H04M1/00 ,  H03K17/687 ,  H01P1/15 ,  H03K17/06 ,  H03K17/10 ,  H03K17/693 ,  H03K19/0185 ,  H03K19/0944 ,  H04B1/40 ,  H03K17/08

CPC分类号： H03K17/6871 ,  H01P1/15 ,  H03K17/063 ,  H03K17/102 ,  H03K17/693 ,  H03K19/018521 ,  H03K19/0944 ,  H03K2017/0803 ,  H04B1/40

摘要： An RF switch circuit and method for switching RF signals that may be fabricated using common integrated circuit materials such as silicon, particularly using insulating substrate technologies. The RF switch includes switching and shunting transistor groupings to alternatively couple RF input signals to a common RF node, each controlled by a switching control voltage (SW) or its inverse (SW_), which are approximately symmetrical about ground. The transistor groupings each comprise one or more insulating gate FET transistors connected together in a “stacked” series channel configuration, which increases the breakdown voltage across the series connected transistors and improves RF switch compression. A fully integrated RF switch is described including control logic and a negative voltage generator with the RF switch elements. In one embodiment, the fully integrated RF switch includes an oscillator, a charge pump, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit.

公开(公告)号：US09755632B2

公开(公告)日：2017-09-05

申请号：US14826017

申请日：2015-08-13

申请人： STMicroelectronics International N.V. ,  STMicroelectronics S.r.l.

发明人： Vikas Rana ,  Fabio De Santis

IPC分类号： H03L5/00 ,  H03K17/10

CPC分类号： H03K17/102

摘要： A cascode voltage generating circuit and method are provided. The circuit includes four switching elements. In a high voltage operation mode, the first and second switching elements, respectively, couple a first intermediate voltage input node to a first intermediate voltage output node, and a second intermediate voltage input node to a second intermediate voltage output node. In a low voltage operation mode, the third switching element couples the first and second intermediate voltage input nodes to a ground reference voltage level, and the fourth switching element couples the first and second intermediate voltage output nodes to a supply voltage level.

公开(公告)号：US09722605B2

公开(公告)日：2017-08-01

申请号：US15137424

申请日：2016-04-25

申请人： Conversant Intellectual Property Management Inc.

发明人： Barry A. Hoberman ,  Daniel L. Hillman ,  William G. Walker ,  John M. Callahan ,  Michael A. Zampaglione ,  Andrew Cole

IPC分类号： H03K19/17 ,  H03K19/00 ,  G11C5/14 ,  H03K3/356 ,  H03K17/10 ,  H03K5/14 ,  H03K19/003 ,  H02M3/07 ,  H03K3/037

CPC分类号： H03K19/0016 ,  G11C5/14 ,  G11C5/144 ,  G11C5/148 ,  H02M3/07 ,  H03K3/0372 ,  H03K3/356086 ,  H03K3/356113 ,  H03K5/14 ,  H03K17/102 ,  H03K19/00315

摘要： An integrated circuit includes first circuitry and sleep transistor circuitry. The first circuitry receives input signals and processes the input signals. The first circuitry also retains data in a sleep state that has low leakage. The sleep transistor circuitry is coupled to the first circuitry and receives a sleep signal that has a negative voltage. The sleep circuitry reduces power consumption of the first circuitry in the sleep state to have low leakage based on the sleep signal while retaining the data in the first circuitry.

公开(公告)号：US09698599B2

公开(公告)日：2017-07-04

申请号：US15095495

申请日：2016-04-11

申请人： Volterra Semiconductor LLC

发明人： Anthony J. Stratakos ,  Michael D. McJimsey ,  Ilija Jergovic ,  Alexandr Ikriannikov ,  Artin Der Minassians ,  Kaiwei Yao ,  David B. Lidsky ,  Marco A. Zuniga ,  Ana Borisavljevic

IPC分类号： H02J1/10 ,  H02J3/38 ,  H02M3/158 ,  H03K17/10 ,  H03K17/12 ,  H03K17/14 ,  H03K17/693

CPC分类号： H02J1/102 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H02J3/383 ,  H02J2001/106 ,  H02M3/158 ,  H03K17/102 ,  H03K17/122 ,  H03K17/145 ,  H03K17/693 ,  H03K2217/0036 ,  H03K2217/0054 ,  Y02E10/563 ,  Y10T307/685 ,  Y10T307/696 ,  Y10T307/707 ,  H01L2924/00014

摘要： An electric power system includes N electric power sources and N switching circuits, where N is an integer greater than one. Each switching circuit includes an input port electrically coupled to a respective one of the N electric power sources, an output port, and a first switching device adapted to switch between its conductive and non-conductive states to transfer power from the input port to the output port. The output ports of the N switching circuits are electrically coupled in series and to a load to establish an output circuit. Each of the N switching circuits uses an interconnection inductance of the output circuit as a primary energy storage inductance of the switching circuit.

公开(公告)号：US09692293B2

公开(公告)日：2017-06-27

申请号：US14323396

申请日：2014-07-03

申请人： General Electric Company

发明人： Tao Wu ,  Ying Zhang ,  Laigui Qin ,  Yingqi Zhang ,  Fan Zhang ,  Xin Hao

IPC分类号： H02M1/32 ,  H02H7/12 ,  H03K17/10

CPC分类号： H02M1/32 ,  H02H7/1203 ,  H02M2001/325 ,  H03K17/107

摘要： A circuit includes a switching module, a control module, and a driving module. The driving module is electrically coupled between the control module and the switching module for generating a driving signal. The driving module includes a normal driving unit and a fault protection unit. The normal driving unit is for turning on and off the switching module according to a first command signal from the control module. The fault protection unit is for lowering the driving signal from a driving value to a protection value according to a second command signal from the control module during a fault protection period after the control module receives a fault signal.

公开(公告)号：US09685857B2

公开(公告)日：2017-06-20

申请号：US14176467

申请日：2014-02-10

申请人： Schneider Toshiba Inverter Europe SAS

发明人： Allan Barauna ,  Hocine Boulharts

IPC分类号： H02M5/45 ,  H02M3/156 ,  H03K17/10 ,  H03K17/74 ,  H02M5/458

CPC分类号： H02M3/156 ,  H02M5/458 ,  H03K17/102 ,  H03K17/74

摘要： The invention relates to a control device (1) employed in a switched electrical power supply system to control a DC/DC converter of said switched electrical power supply system, said control device comprising a first input terminal (A) and a second input terminal (B), a first transistor (T1) connected via its source to the second input terminal (B) and a second transistor (T2) furnished with a gate (G) and connected via its drain (D) to the first input terminal (A), and via its source (S) to the first transistor (T1), the control device comprising a control assembly connected to the gate (G) of the second transistor (T2) and to the second input terminal (B) and comprising a capacitor (Ca) and a first Zener diode (Dz1) connected in series to said capacitor (Ca) and a second Zener diode (Dz2) connected between the gate (G) and the source (S) of the second transistor (T2).