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    Electrically conductive laminate structure containing graphene region
    102.
    发明授权
    Electrically conductive laminate structure containing graphene region 有权
    导电层压结构

    公开(公告)号：US08946903B2

    公开(公告)日：2015-02-03

    申请号：US12833074

    申请日：2010-07-09

    申请人： Gurtej S. Sandhu

    发明人： Gurtej S. Sandhu

    IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01B13/00 ,  H01L21/768 ,  H01L23/532

    CPC分类号： H01L23/53276 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/53209 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Some embodiments include electrical interconnects. The interconnects may contain laminate structures having a graphene region sandwiched between non-graphene regions. In some embodiments the graphene and non-graphene regions may be nested within one another. In some embodiments an electrically insulative material may be over an upper surface of the laminate structure, and an opening may extend through the insulative material to a portion of the laminate structure. Electrically conductive material may be within the opening and in electrical contact with at least one of the non-graphene regions of the laminate structure. Some embodiments include methods of forming electrical interconnects in which non-graphene material and graphene are alternately formed within a trench to form nested non-graphene and graphene regions.

    摘要翻译： 一些实施例包括电互连。 互连可以包含层压结构，其具有夹在非石墨烯区域之间的石墨烯区域。 在一些实施例中，石墨烯和非石墨烯区域可以彼此嵌套。 在一些实施例中，电绝缘材料可以在层压结构的上表面之上，并且开口可以延伸穿过绝缘材料到层压结构的一部分。 导电材料可以在开口内并且与层压结构的非石墨烯区域中的至少一个电接触。 一些实施例包括形成电互连的方法，其中在沟槽内交替形成非石墨烯材料和石墨烯以形成嵌套的非石墨烯和石墨烯区域。

    Memory cells, semiconductor device structures, memory systems, and methods of fabrication
    103.
    发明授权
    Memory cells, semiconductor device structures, memory systems, and methods of fabrication 有权
    存储单元，半导体器件结构，存储器系统和制造方法

    公开(公告)号：US08923038B2

    公开(公告)日：2014-12-30

    申请号：US13527173

    申请日：2012-06-19

    申请人： Witold Kula ,  Gurtej S. Sandhu ,  Stephen J. Kramer

    发明人： Witold Kula ,  Gurtej S. Sandhu ,  Stephen J. Kramer

    IPC分类号： G11C11/15 ,  G11C11/00 ,  H01L29/82

    CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/12

    摘要： Methods of forming magnetic memory cells are disclosed. Magnetic and non-magnetic materials are formed into a primal precursor structure in an initial stress state of essentially no strain, compressive strain, or tensile strain. A stress-compensating material, e.g., a non-sacrificial, conductive material, is formed to be disposed on the primal precursor structure to form a stress-compensated precursor structure in a net beneficial stress state. Thereafter, the stress-compensated precursor structure may be patterned to form a cell core of a memory cell. The net beneficial stress state of the stress-compensated precursor structure lends to formation of one or more magnetic regions, in the cell core, exhibiting a vertical magnetic orientation without deteriorating a magnetic strength of the one or more magnetic regions. Also disclosed are memory cells, memory cell structures, semiconductor device structures, and spin torque transfer magnetic random access memory (STT-MRAM) systems.

    摘要翻译： 公开了形成磁存储器单元的方法。 磁性和非磁性材料在基本上没有应变，压缩应变或拉伸应变的初始应力状态下形成原始前体结构。 形成应力补偿材料，例如非牺牲导电材料，以设置在原始前体结构上以在净有益应力状态下形成应力补偿前体结构。 此后，应力补偿前体结构可以被图案化以形成存储单元的单元芯。 应力补偿前体结构的净有益应力状态有助于在电池芯中形成一个或多个磁性区域，呈现垂直磁性取向而不会使一个或多个磁性区域的磁强度恶化。 还公开了存储器单元，存储单元结构，半导体器件结构和自旋转矩传递磁随机存取存储器（STT-MRAM）系统。

    Reactive metal implated oxide based memory
    104.
    发明授权
    Reactive metal implated oxide based memory 有权
    反应性金属注入氧化物基记忆

    公开(公告)号：US08772841B2

    公开(公告)日：2014-07-08

    申请号：US13616307

    申请日：2012-09-14

    申请人： D.V. Nirmal Ramaswamy ,  Gurtej S. Sandhu

    发明人： D.V. Nirmal Ramaswamy ,  Gurtej S. Sandhu

    IPC分类号： H01L29/66 ,  H01L29/94 ,  H01L21/70 ,  H01L27/108

    CPC分类号： H01L45/08 ,  G11C13/0007 ,  H01L45/145 ,  H01L45/165

    摘要： Methods, devices, and systems associated with oxide based memory can include a method of forming an oxide based memory cell. Forming an oxide based memory cell can include forming a first conductive element, forming an oxide over the first conductive element, implanting a reactive metal into the oxide, and forming a second conductive element over the oxide.

    摘要翻译： 与基于氧化物的存储器相关联的方法，装置和系统可以包括形成基于氧化物的存储器单元的方法。 形成基于氧化物的存储单元可以包括形成第一导电元件，在第一导电元件上形成氧化物，将活性金属注入到氧化物中，以及在氧化物上形成第二导电元件。

    Trench isolation implantation
    105.
    发明授权
    Trench isolation implantation 有权
    沟槽隔离植入

    公开(公告)号：US08686535B2

    公开(公告)日：2014-04-01

    申请号：US12758488

    申请日：2010-04-12

    申请人： Gurtej S. Sandhu ,  John A. Smythe, III

    发明人： Gurtej S. Sandhu ,  John A. Smythe, III

    IPC分类号： H01L21/70

    CPC分类号： H01L21/76237 ,  G11C11/401 ,  H01L27/10844 ,  H01L27/11517

    摘要： Embodiments of the disclosure include a shallow trench isolation structure having a dielectric material with energetic species implanted to a predetermined depth of the dielectric material. Embodiments further include methods of fabricating the trench structures with the implant of energetic species to the predetermined depth. In various embodiments the implant of energetic species is used to densify the dielectric material to provide a uniform wet etch rate across the surface of the dielectric material. Embodiments also include memory devices, integrated circuits, and electronic systems that include shallow trench isolation structures having the dielectric material with the high flux of energetic species implanted to the predetermined depth of the dielectric material.

    摘要翻译： 本公开的实施例包括浅沟槽隔离结构，其具有将能量物质注入电介质材料的预定深度的电介质材料。 实施例还包括使能量物质的植入物到预定深度制造沟槽结构的方法。 在各种实施例中，能量物质的注入用于致密化电介质材料，以提供穿过电介质材料表面的均匀的湿蚀刻速率。 实施例还包括存储器件，集成电路和电子系统，其包括浅沟槽隔离结构，其具有植入到介电材料的预定深度的高能量物质的高通量的电介质材料。

    Method to reduce charge buildup during high aspect ratio contact etch
    106.
    发明授权
    Method to reduce charge buildup during high aspect ratio contact etch 有权
    在高纵横比接触蚀刻期间减少电荷积累的方法

    公开(公告)号：US08673787B2

    公开(公告)日：2014-03-18

    申请号：US13164970

    申请日：2011-06-21

    申请人： Gurtej S. Sandhu ,  Max F. Hineman ,  Daniel A. Steckert ,  Jingyi Bai ,  Shane J. Trapp ,  Tony Schrock

    发明人： Gurtej S. Sandhu ,  Max F. Hineman ,  Daniel A. Steckert ,  Jingyi Bai ,  Shane J. Trapp ,  Tony Schrock

    IPC分类号： H01L21/302

    CPC分类号： H01L21/76802 ,  H01L21/31116 ,  Y10S438/906

    摘要： A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. The oxide layer is deposited on an underlying substrate. A plasma etching gas is formed from a carbon source gas. Dopants are mixed into the gas. The doped plasma etching gas etches a substantially vertical contact hole through the oxide layer by doping carbon chain polymers formed along the sidewalls of the contact holes during the etching process into a conductive state. The conductive state of the carbon chain polymers reduces the charge buildup along sidewalls to prevent twisting of the contact holes by bleeding off the charge and ensuring proper alignment with active area landing regions. The etching stops at the underlying substrate.

    摘要翻译： 描述了使用硬光致抗蚀剂掩模的高纵横比接触蚀刻氧化物层中的基本上垂直的接触孔的方法。 氧化物层沉积在下面的衬底上。 由碳源气体形成等离子体蚀刻气体。 掺杂剂混入气体中。 掺杂的等离子体蚀刻气体通过将在蚀刻过程中沿着接触孔的侧壁形成的碳链聚合物掺杂到导电状态来蚀刻通过氧化物层的基本垂直的接触孔。 碳链聚合物的导电状态减少了沿着侧壁的电荷累积，以防止通过渗出电荷并确保与有源区着陆区域的适当对准来接合孔的扭曲。 蚀刻停止在下面的基底。

    Transistor Devices, Memory Cells, And Arrays Of Memory Cells
    108.
    发明申请
    Transistor Devices, Memory Cells, And Arrays Of Memory Cells 审中-公开
    晶体管器件，存储单元和存储单元阵列

    公开(公告)号：US20140054709A1

    公开(公告)日：2014-02-27

    申请号：US13595832

    申请日：2012-08-27

    申请人： D. V. Nirmal Ramaswamy ,  Gurtej S. Sandhu

    发明人： D. V. Nirmal Ramaswamy ,  Gurtej S. Sandhu

    IPC分类号： H01L29/78 ,  H01L27/088

    CPC分类号： H01L29/7887 ,  H01L27/11521

    摘要： A transistor device includes a pair of source/drain regions having a channel region there-between. A first gate is proximate the channel region. A gate dielectric is between the first gate and the channel region. A second gate is proximate the channel region. A programmable material is between the second gate and the channel region. The programmable material includes at least one of a) a multivalent metal oxide portion and an oxygen-containing dielectric portion, or b) a multivalent metal nitride portion and a nitrogen-containing dielectric portion. Memory cells and arrays of memory cells are disclosed.

    摘要翻译： 晶体管器件包括在其之间具有沟道区的一对源/漏区。 第一个门靠近通道区域。 栅介质位于第一栅极和沟道区之间。 第二个门靠近通道区域。 可编程材料位于第二栅极和沟道区域之间。 可编程材料包括a）多价金属氧化物部分和含氧电介质部分中的至少一种，或b）多价金属氮化物部分和含氮介电部分。 公开了存储器单元和存储器单元阵列。

    Reduced leakage memory cells
    109.
    发明授权
    Reduced leakage memory cells 有权
    减少泄漏记忆体

    公开(公告)号：US08643087B2

    公开(公告)日：2014-02-04

    申请号：US11524343

    申请日：2006-09-20

    申请人： Gurtej S. Sandhu ,  Chandra Mouli

    发明人： Gurtej S. Sandhu ,  Chandra Mouli

    IPC分类号： H01L29/10

    CPC分类号： H01L27/108 ,  B82Y10/00 ,  G11C11/24 ,  H01L27/10808 ,  H01L27/10844 ,  H01L27/10873 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/42392 ,  H01L29/78642 ,  H01L51/057

    摘要： Methods and structures are described for reducing leakage currents in semiconductor memory storage cells. Vertically oriented nanorods may be used in the channel region of an access transistor. The nanorod diameter can be made small enough to cause an increase in the electronic band gap energy in the channel region of the access transistor, which may serve to limit channel leakage currents in its off-state. In various embodiments, the access transistor may be electrically coupled to a double-sided capacitor. Memory devices according to embodiments of the invention, and systems including such devices are also disclosed.

    摘要翻译： 描述了用于减少半导体存储器存储单元中的漏电流的方法和结构。 垂直取向的纳米棒可用于存取晶体管的沟道区。 纳米棒直径可以做得足够小以引起存取晶体管的沟道区域中的电子带隙能量的增加，这可能有助于将通道漏电流限制在其截止状态。 在各种实施例中，存取晶体管可以电耦合到双面电容器。 还公开了根据本发明的实施例的存储器件，以及包括这种器件的系统。

    Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and reading from a memory cell, and methods of programming a memory cell
    110.
    发明授权
    Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and reading from a memory cell, and methods of programming a memory cell 有权
    存储单元，非易失性存储器阵列，操作存储器单元的方法，写入存储器单元和从存储器单元读取的方法，以及编程存储器单元的方法

    公开(公告)号：US08634224B2

    公开(公告)日：2014-01-21

    申请号：US12855624

    申请日：2010-08-12

    申请人： Bhaskar Srinivasan ,  Gurtej S. Sandhu

    发明人： Bhaskar Srinivasan ,  Gurtej S. Sandhu

    IPC分类号： G11C11/00

    CPC分类号： G11C13/0002 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/003 ,  G11C13/004 ,  G11C13/0069 ,  G11C2213/12 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/52 ,  G11C2213/56 ,  G11C2213/77 ,  H01L27/101 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1206

    摘要： In one aspect, a method of operating a memory cell includes using different electrodes to change a programmed state of the memory cell than are used to read the programmed state of the memory cell. In one aspect, a memory cell includes first and second opposing electrodes having material received there-between. The material has first and second lateral regions of different composition relative one another. One of the first and second lateral regions is received along one of two laterally opposing edges of the material. Another of the first and second lateral regions is received along the other of said two laterally opposing edges of the material. At least one of the first and second lateral regions is capable of being repeatedly programmed to at least two different resistance states. Other aspects and implementations are disclosed.

    摘要翻译： 一方面，操作存储单元的方法包括使用不同的电极来改变存储器单元的编程状态，而不是用于读取存储单元的编程状态。 在一个方面，存储单元包括第一和第二相对电极，其间具有接收在其间的材料。 该材料具有彼此不同组成的第一和第二横向区域。 第一和第二横向区域中的一个沿着材料的两个横向相对的边缘中的一个被接收。 第一和第二横向区域中的另一个沿着材料的所述两个横向相对的边缘中的另一个被容纳。 第一和第二横向区域中的至少一个能够被重复编程至至少两个不同的阻力状态。 公开了其他方面和实现。