利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

349 条记录 (耗时 0.026 秒)

    Resist pattern forming method
    101.
    发明授权
    Resist pattern forming method 失效
    抗蚀图案形成方法

    公开(公告)号：US06190840B1

    公开(公告)日：2001-02-20

    申请号：US09098469

    申请日：1998-06-17

    申请人： Kenji Kawano ,  Shinichi Ito ,  Katsuya Okumura

    发明人： Kenji Kawano ,  Shinichi Ito ,  Katsuya Okumura

    IPC分类号： G03F720

    CPC分类号： G03F1/30 ,  G03F1/32 ,  G03F7/16

    摘要： A resist pattern forming method according to this invention is characterized by forming a resist film to have different thicknesses in one region and the other region in accordance with the pattern size or pattern density of a photomask. The resist pattern forming method according to this invention is characterized by selectively forming a resist film in part of a substrate region by applying a resist in part of the region without applying the resist in the remaining region. The resist pattern forming method according to this invention is characterized by selectively forming a resist film on part of a substrate on the basis of the intensity of exposure light observed at the resist film.

    摘要翻译： 根据本发明的抗蚀剂图案形成方法的特征在于，根据光掩模的图案尺寸或图案密度，在一个区域和另一个区域中形成具有不同厚度的抗蚀剂膜。 根据本发明的抗蚀剂图案形成方法的特征在于，通过在部分区域中施加抗蚀剂而不在其余区域中施加抗蚀剂，在基底区域的一部分中选择性地形成抗蚀剂膜。 根据本发明的抗蚀剂图案形成方法的特征在于，基于在抗蚀剂膜处观察到的曝光光的强度，在基板的一部分上选择性地形成抗蚀剂膜。

    Method of forming electrical connections for a semiconductor device
    102.
    发明授权
    Method of forming electrical connections for a semiconductor device 失效
    形成半导体器件的电连接的方法

    公开(公告)号：US5994218A

    公开(公告)日：1999-11-30

    申请号：US724735

    申请日：1996-09-30

    申请人： Shigeki Sugimoto ,  Katsuya Okumura

    发明人： Shigeki Sugimoto ,  Katsuya Okumura

    IPC分类号： H01L23/522 ,  H01L21/304 ,  H01L21/768 ,  H01L21/28

    CPC分类号： H01L21/76877

    摘要： A silicon film is deposited using low pressure chemical vapor deposition (LPCVD) to fill in openings formed in a substrate such as an insulating film. An aluminum film and a metal film are then formed on the silicon film. A thermal process is then carried out. This thermal process causes the deposited aluminum to replace the silicon in the openings because the silicon migrates to the metal and forms a metal silicide film. The aluminum which replaces the silicon in the openings has few or no voids. The metal silicide film any remaining portion of the aluminum film are then removed using CMP, for example.

    摘要翻译： 使用低压化学气相沉积（LPCVD）沉积硅膜以填充形成在诸如绝缘膜的衬底中的开口。 然后在硅膜上形成铝膜和金属膜。 然后进行热处理。 该热处理使沉积的铝取代了开口中的硅，因为硅迁移到金属并形成金属硅化物膜。 在开口中替代硅的铝很少或没有空隙。 然后使用CMP除去铝膜的任何剩余部分的金属硅化物膜。

    Magnetron plasma processing apparatus and processing method
    104.
    发明授权
    Magnetron plasma processing apparatus and processing method 失效
    磁控管等离子体处理装置及加工方法

    公开(公告)号：US5888338A

    公开(公告)日：1999-03-30

    申请号：US827439

    申请日：1997-03-27

    申请人： Hiromi Harada ,  Sinji Kubota ,  Hiromi Kumagai ,  Junichi Arami ,  Keiji Horioka ,  Isahiro Hasegawa ,  Haruo Okano ,  Katsuya Okumura ,  Yukimasa Yoshida

    发明人： Hiromi Harada ,  Sinji Kubota ,  Hiromi Kumagai ,  Junichi Arami ,  Keiji Horioka ,  Isahiro Hasegawa ,  Haruo Okano ,  Katsuya Okumura ,  Yukimasa Yoshida

    IPC分类号： H01J37/32 ,  H01J37/34 ,  H01L21/302

    CPC分类号： H01J37/32623 ,  H01J37/3266 ,  H01J37/3408 ,  H01J37/3452 ,  H01J37/3494 ,  H01J2237/3344

    摘要： The invention provides a novel magnetron plasma processing apparatus comprising the following, a vacuum chamber storing an etching object, the first electrode which is provided in the vacuum chamber and holds the etching object, the second electrode which is disposed in opposition from the first electrode, where the first and second electrodes are in parallel with each other, a gas-supply unit feeding etching gas to the vacuum chamber, a magnetic-field generating means which is disposed on the part opposite from the first electrode in opposition from the second electrode, and a power-supply unit which feeds power to either of these first and second electrodes and generates discharge between these parallel electrodes. Magnetic-field generating means is provided with a magnetic block whose both-end surfaces are provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between both-end surfaces of the magnetic block.

    摘要翻译： 本发明提供了一种新颖的磁控管等离子体处理装置，其特征在于包括：存储蚀刻对象的真空室，设置在真空室中并保持蚀刻对象物的第一电极，与第一电极相对配置的第二电极， 其中所述第一和第二电极彼此平行;供给单元，向所述真空室供给蚀刻气体;磁场产生装置，设置在与所述第一电极相对的与所述第二电极相对的部分上; 以及向这些第一和第二电极中的任一个供电的电源单元，并在这些平行电极之间产生放电。 磁场产生装置设置有磁性块，其两端表面设置有彼此极性相反的磁极，此外，与磁体的两端面之间设置与第二电极相对的平面凹部 块。

    Apparatus for polishing a wafer
    105.
    发明授权
    Apparatus for polishing a wafer 失效
    用于抛光晶片的设备

    公开(公告)号：US5876273A

    公开(公告)日：1999-03-02

    申请号：US625291

    申请日：1996-04-01

    申请人： Hiroyuki Yano ,  Katsuya Okumura ,  Norio Kimura ,  Tomoyuki Yahiro ,  Hozumi Yasuda

    发明人： Hiroyuki Yano ,  Katsuya Okumura ,  Norio Kimura ,  Tomoyuki Yahiro ,  Hozumi Yasuda

    IPC分类号： B24B37/30 ,  B24B29/02

    CPC分类号： B24B37/30

    摘要： A polishing apparatus is provided which improves uniformity across the surface of a polished wafer. The apparatus includes a wafer carrier, a guide ring coupled to a lower portion of the wafer carrier, a circular plate coupled to a first inner circumference portion of the guide ring distant from the wafer carrier, and a cavity, formed within an area bounded by the lower portion of the wafer carrier, an inner circumference of the circular plate, and a second inner circumference portion of the guide ring between the circular plate and the lower portion of the wafer carrier, the circular plate holding the wafer to be polished in the cavity.

    摘要翻译： 提供了一种改善抛光晶片表面均匀性的抛光装置。 该装置包括晶片载体，联接到晶片载体的下部的引导环，耦合到远离晶片载体的引导环的第一内周部分的圆形板，以及形成在由 晶片载体的下部，圆形板的内圆周和导向环的第二内周部分在圆形板和晶片载体的下部之间，圆形板将待抛光的晶片保持在 腔。

    Revolving drum polishing apparatus
    107.
    发明授权
    Revolving drum polishing apparatus 失效
    滚筒抛光装置

    公开(公告)号：US5643056A

    公开(公告)日：1997-07-01

    申请号：US550117

    申请日：1995-10-30

    申请人： Masayoshi Hirose ,  Seiji Ishikawa ,  Norio Kimura ,  Yoshimi Sasaki ,  Kouki Yamada ,  Fujio Aoyama ,  Noburu Shimizu ,  Katsuya Okumura

    发明人： Masayoshi Hirose ,  Seiji Ishikawa ,  Norio Kimura ,  Yoshimi Sasaki ,  Kouki Yamada ,  Fujio Aoyama ,  Noburu Shimizu ,  Katsuya Okumura

    IPC分类号： B24B7/22 ,  B24B29/02 ,  B24B37/07 ,  B24B37/10 ,  H01L21/304 ,  B24B1/00

    CPC分类号： B24B7/228 ,  B24B29/02 ,  B24B37/04

    摘要： A drum-type polishing apparatus for producing a flat mirror polish on an object such as a semiconductor wafer, is capable of three degrees of freedom of movement of a drum member with respect to the wafer. The relative movements can be made, successively or simultaneously, at right angles to an axis of the drum, parallel to the surface of the wafer, as well as at any desired angular orientations. Combined with a follower device to provide automatic compensation for unevenness in pressing pressure applied to the wafer during polishing, the polishing apparatus offers outstanding uniformity in polishing quality and high productivity, even for large diameter wafers, with a comparatively modest investment in both facility space and equipment cost.

    摘要翻译： 用于在诸如半导体晶片的物体上制造平面镜抛光的滚筒式抛光装置能够使鼓构件相对于晶片具有三个自由度的移动。 相对运动可以连续或同时地与滚筒的轴线成直角，平行于晶片的表面以及任何期望的角度取向。 结合跟随装置，为抛光期间对晶片施加的压力压力的不均匀性提供自动补偿，抛光装置即使对于大直径晶片也具有优异的抛光质量均匀性和高生产率，在设备空间和 设备成本

    In-situ temperature measurement using X-ray diffraction
    108.
    发明授权
    In-situ temperature measurement using X-ray diffraction 失效
    使用X射线衍射的原位温度测量

    公开(公告)号：US5636258A

    公开(公告)日：1997-06-03

    申请号：US554209

    申请日：1995-10-24

    申请人： Katsuya Okumura ,  James G. Ryan ,  Gregory B. Stephenson ,  Hans-Joerg Timme

    发明人： Katsuya Okumura ,  James G. Ryan ,  Gregory B. Stephenson ,  Hans-Joerg Timme

    IPC分类号： G01K11/30 ,  G01N23/207 ,  G21K5/02 ,  H01L21/66

    CPC分类号： G01K11/30 ,  G01N23/207

    摘要： A non-contact in-situ temperature measurement apparatus for a single crystal substrate such as a semiconductor wafer using X-ray diffraction. Utilizing the Bragg condition for X-ray diffraction, the lattice constant of the semiconductor substrate can be determined either by measuring the diffraction angle for a monochromatic X-ray (monochromatic approach) or by measuring the wavelength of an X-ray diffracted with a certain scattering angle (polychromatic approach). The lattice constant, as a well-known function of temperature, is finally converted into the temperature of the semiconductor substrate.

    摘要翻译： 一种用于单晶衬底（例如使用X射线衍射的半导体晶片）的非接触式现场温度测量装置。 利用用于X射线衍射的布拉格条件，半导体衬底的晶格常数可以通过测量单色X射线（单色法）的衍射角或通过测量以某种方式衍射的X射线的波长来确定 散射角（多色方法）。 作为公知的温度函数的晶格常数最终转换为半导体衬底的温度。

    Exposure mask, exposure mask substrate, method for fabricating the same, and method for forming pattern based on exposure mask
    109.
    发明授权
    Exposure mask, exposure mask substrate, method for fabricating the same, and method for forming pattern based on exposure mask 失效
    曝光掩模，曝光掩模基板，其制造方法以及基于曝光掩模形成图案的方法

    公开(公告)号：US5620815A

    公开(公告)日：1997-04-15

    申请号：US471782

    申请日：1995-06-06

    申请人： Shinichi Ito ,  Haruo Okano ,  Toru Watanabe ,  Katsuya Okumura

    发明人： Shinichi Ito ,  Haruo Okano ,  Toru Watanabe ,  Katsuya Okumura

    IPC分类号： G03F1/00 ,  G03F1/26 ,  G03F1/32 ,  G03F9/00

    CPC分类号： G03F1/32 ,  G03F1/26

    摘要： An exposure mask having an excellent alignment accuracy between patterns, which is prepared by first forming on a light transmissive substrate a light shielding film or a semi-transparent film pattern (first pattern) somewhat larger than a desired dimension, forming thereon a semi-transparent film or a light transmissive film pattern (second pattern) so as to include all patterns of the desired dimensions made up of a light shielding part, a semi-transparent part and a light transmissive part, and then removing a projected part of the first pattern with use of the second pattern as a mask.The semi-transparent film is formed of at least two layers each of which contains a common element, thus the semi-transparent film can be made with use of the same apparatus and when patterning, etching process can be carried out with use of the same etchant.Further, since in a mask including the semi-transparent pattern, at least that area of a non-pattern zone where light reaches a wafer through the transfer, acts to shield the exposure light, too narrowed pattern or insufficient focal depth can be prevented.

    摘要翻译： 通过首先在透光性基板上形成稍大于所需尺寸的遮光膜或半透明膜图案（第一图案）而制成的图案之间具有优异的取向精度的曝光掩模，在其上形成半透明 膜或透光膜图案（第二图案），以便包括由遮光部分，半透明部分和透光部分组成的所需尺寸的所有图案，然后去除第一图案的突出部分 使用第二种图案作为掩模。 半透明膜由至少两层形成，每层均含有共同的元素，因此可以使用相同的装置制造半透明膜，并且当图案化时，可以使用它们进行蚀刻工艺 蚀刻剂 此外，由于在包括半透明图案的掩模中，至少通过转印光到达晶片的非图案区域的面积起到屏蔽曝光光的作用，可以防止太窄的图案或不充分的焦深。