公开(公告)号：US09984868B2

公开(公告)日：2018-05-29

申请号：US14211024

申请日：2014-03-14

申请人： Victor Nguyen ,  Woong Jae Lee ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

发明人： Victor Nguyen ,  Woong Jae Lee ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

IPC分类号： H01L21/469 ,  H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56

CPC分类号： H01L21/0217 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45542 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02348

摘要： Provided are methods of for deposition of SiN films via PEALD processes. Certain methods pertain to exposing a substrate surface to a silicon precursor to provide a silicon precursor at the substrate surface; purging excess silicon precursor; exposing the substrate surface to an ionized reducing agent; and purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C.

公开(公告)号：US08758638B2

公开(公告)日：2014-06-24

申请号：US13104314

申请日：2011-05-10

申请人： Weifeng Ye ,  Victor Nguyen ,  Mei-Yee Shek ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

发明人： Weifeng Ye ,  Victor Nguyen ,  Mei-Yee Shek ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

IPC分类号： H01L21/3065 ,  H01L21/302

CPC分类号： H01L21/02074 ,  H01L21/76883

摘要： A method for the removal of copper oxide from a copper and dielectric containing structure of a semiconductor chip is provided. The copper and dielectric containing structure may be planarized by chemical mechanical planarization (CMP) and treated by the method to remove copper oxide and CMP residues. Annealing in a hydrogen (H2) gas and ultraviolet (UV) environment removes copper oxide, and a pulsed ammonia plasma removes CMP residues.

摘要翻译： 提供了一种从铜中除去氧化铜和包含半导体芯片的结构的方法。 可以通过化学机械平面化（CMP）对包含铜和电介质的结构进行平面化，并通过除去氧化铜和CMP残留物的方法进行处理。 在氢（H2）气体和紫外线（UV）环境中退火除去氧化铜，脉冲氨等离子体去除CMP残留物。

公开(公告)号：US08753989B2

公开(公告)日：2014-06-17

申请号：US13365229

申请日：2012-02-02

申请人： Mihaela Balseanu ,  Michael S. Cox ,  Li-Qun Xia ,  Mei-Yee Shek ,  Jia Lee ,  Vladimir Zubkov ,  Tzu-Fang Huang ,  Rongping Wang ,  Isabelita Roflox ,  Hichem M'Saad

发明人： Mihaela Balseanu ,  Michael S. Cox ,  Li-Qun Xia ,  Mei-Yee Shek ,  Jia Lee ,  Vladimir Zubkov ,  Tzu-Fang Huang ,  Rongping Wang ,  Isabelita Roflox ,  Hichem M'Saad

IPC分类号： H01L21/31

CPC分类号： C23C16/345 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/3141 ,  H01L21/3185 ,  H01L21/823412 ,  H01L21/82345 ,  H01L21/823807 ,  H01L21/823835

摘要： High tensile stress in a deposited layer, such as a silicon nitride layer, may be achieved utilizing one or more techniques employed either alone or in combination. In one embodiment, a silicon nitride film having high tensile stress may be formed by depositing the silicon nitride film in the presence of a porogen. The deposited silicon nitride film may be exposed to at least one treatment selected from a plasma or ultraviolet radiation to liberate the porogen. The silicon nitride film may be densified such that a pore resulting from liberation of the porogen is reduced in size, and Si—N bonds in the silicon nitride film are strained to impart a tensile stress in the silicon nitride film. In another embodiment, tensile stress in a silicon nitride film may be enhanced by depositing a silicon nitride film in the presence of a nitrogen-containing plasma at a temperature of less than about 400° C., and exposing the deposited silicon nitride film to ultraviolet radiation.

摘要翻译： 沉积层（例如氮化硅层）中的高拉伸应力可以利用单独使用或组合使用的一种或多种技术来实现。 在一个实施例中，可以通过在致孔剂的存在下沉积氮化硅膜来形成具有高拉伸应力的氮化硅膜。 沉积的氮化硅膜可以暴露于选自等离子体或紫外线辐射的至少一种处理以释放致孔剂。 可以使氮化硅膜致密化，使致孔剂释放产生的孔尺寸减小，并且氮化硅膜中的Si-N键变形以在氮化硅膜中产生拉伸应力。 在另一个实施例中，可以通过在低于约400℃的温度下在含氮等离子体的存在下沉积氮化硅膜来增强氮化硅膜中的拉伸应力，并将沉积的氮化硅膜暴露于紫外线 辐射。

公开(公告)号：US08658242B2

公开(公告)日：2014-02-25

申请号：US13193539

申请日：2011-07-28

申请人： Christopher D. Bencher ,  Roman Gouk ,  Steven Verhaverbeke ,  Li-Qun Xia ,  Yong-Won Lee ,  Matthew D. Scotney-Castle ,  Martin A. Hilkene ,  Peter I. Porshnev

发明人： Christopher D. Bencher ,  Roman Gouk ,  Steven Verhaverbeke ,  Li-Qun Xia ,  Yong-Won Lee ,  Matthew D. Scotney-Castle ,  Martin A. Hilkene ,  Peter I. Porshnev

IPC分类号： B05D5/12

CPC分类号： G11B5/85 ,  G11B5/743 ,  G11B5/855

摘要： A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.

摘要翻译： 提供了一种形成磁性介质基板的方法和装置。 在具有磁敏感层的基底上形成图案化的抗蚀剂层。 在图案化的抗蚀剂层上形成保形层，以防止后续处理期间图案的劣化。 对衬底进行能量处理，其中能量物质根据形成在图案化抗蚀剂中的图案穿透图案化抗蚀剂和保形层的部分，撞击磁敏感层并改变其磁性。 然后去除图案化的抗蚀剂和共形保护层，留下具有基本上不变的形貌的磁性质图案的磁性基底。

公开(公告)号：US20140023794A1

公开(公告)日：2014-01-23

申请号：US13948492

申请日：2013-07-23

申请人： Maitreyee Mahajani ,  Steven D. Marcus ,  Li-Qun Xia ,  Mihaela Balseanu ,  Victor Nguyen ,  Ning Li ,  Jingjing Liu ,  Sukti Chatterjee ,  Timothy W. Weidman

发明人： Maitreyee Mahajani ,  Steven D. Marcus ,  Li-Qun Xia ,  Mihaela Balseanu ,  Victor Nguyen ,  Ning Li ,  Jingjing Liu ,  Sukti Chatterjee ,  Timothy W. Weidman

IPC分类号： C23C16/32 ,  C23C16/36 ,  C23C16/34

CPC分类号： C23C16/325 ,  C23C16/345 ,  C23C16/36 ,  C23C16/45534 ,  C23C16/4554

摘要： Provided are methods and apparatus for low temperature atomic layer deposition of a densified film. A low temperature film is formed and densified by exposure to one or more of a plasma or radical species. The resulting densified film has superior properties to low temperature films formed without densification.

摘要翻译： 提供了用于致密化薄膜的低温原子层沉积的方法和装置。 通过暴露于一种或多种等离子体或自由基物质形成并致密化低温膜。 所得到的致密化膜对于不致密化而形成的低温膜具有优异的性能。

公开(公告)号：US08586487B2

公开(公告)日：2013-11-19

申请号：US13353063

申请日：2012-01-18

申请人： Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

发明人： Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

IPC分类号： H01L21/469

CPC分类号： H01L21/02167 ,  C23C16/345 ,  C23C16/56 ,  H01L21/0217 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/823807 ,  H01L29/7843

摘要： Methods and apparatus for forming conformal silicon nitride films at low temperatures on a substrate are provided. The methods of forming a silicon nitride layer include performing a deposition cycle including flowing a processing gas mixture into a processing chamber having a substrate therein, wherein the processing gas mixture comprises precursor gas molecules having labile silicon to nitrogen, silicon to carbon, or nitrogen to carbon bonds, activating the precursor gas at a temperature between about 20° C. to about 480° C. by preferentially breaking labile bonds to provide one or more reaction sites along a precursor gas molecule, forming a precursor material layer on the substrate, wherein the activated precursor gas molecules bond with a surface on the substrate at the one or more reaction sites, and performing a plasma treatment process on the precursor material layer to form a conformal silicon nitride layer.

摘要翻译： 提供了在基板上在低温下形成共形氮化硅膜的方法和装置。 形成氮化硅层的方法包括进行沉积循环，包括使处理气体混合物流入其中具有衬底的处理室，其中处理气体混合物包含具有不稳定硅到氮，硅到碳或氮的前体气体分子， 碳键，在约20℃至约480℃的温度下活化前体气体，通过优先断开不稳定键以提供沿着前体气体分子的一个或多个反应位点，在基底上形成前体材料层，其中 活化的前体气体分子与一个或多个反应位点处的衬底上的表面结合，并对前体材料层进行等离子体处理工艺以形成共形氮化硅层。

公开(公告)号：US08569166B2

公开(公告)日：2013-10-29

申请号：US13152865

申请日：2011-06-03

申请人： Francimar Campana Schmitt ,  Li-Qun Xia ,  Son Van Nguyen ,  Shankar Venkataraman

发明人： Francimar Campana Schmitt ,  Li-Qun Xia ,  Son Van Nguyen ,  Shankar Venkataraman

IPC分类号： H01L21/4763

CPC分类号： H01L21/76835 ,  C23C16/0272 ,  C23C16/30 ,  C23C16/325 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02351 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832

摘要： Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.

公开(公告)号：US20130192761A1

公开(公告)日：2013-08-01

申请号：US13754733

申请日：2013-01-30

申请人： Joseph Yudovsky ,  Ralf Hofmann ,  Jeonghoon Oh ,  Li-Qun Xia ,  Toshiaki Fujita ,  Pravin K. Narwankar ,  Nag B, Patibandla ,  Srinivas Satya ,  Banqiu Wu

发明人： Joseph Yudovsky ,  Ralf Hofmann ,  Jeonghoon Oh ,  Li-Qun Xia ,  Toshiaki Fujita ,  Pravin K. Narwankar ,  Nag B, Patibandla ,  Srinivas Satya ,  Banqiu Wu

IPC分类号： C23C16/54 ,  B05C13/00

CPC分类号： C23C16/54 ,  B05C13/00 ,  C23C16/45551

摘要： A substrate processing system for processing multiple substrates is provided and generally includes at least one processing platform and at least one staging platform. Each substrate is positioned on a substrate carrier disposed on a substrate support assembly. Multiple substrate carriers, each is configured to carry a substrate thereon, are positioned on the surface of the substrate support assembly. The processing platform and the staging platform, each includes a separate substrate support assembly, which can be rotated by a separate rotary track mechanism. Each rotary track mechanism is capable of supporting the substrate support assembly and continuously rotating multiple substrates carried by the substrate carriers and disposed on the substrate support assembly. Each substrate is thus processed through at least one shower head station and at least one buffer station, which are positioned at a distance above the rotary track mechanism of the processing platform. Each substrate can be transferred between the processing platform and the staging platform and in and out the substrate processing system.

摘要翻译： 提供了一种用于处理多个基板的基板处理系统，并且通常包括至少一个处理平台和至少一个分段平台。 每个衬底位于设置在衬底支撑组件上的衬底载体上。 多个衬底载体，每个被配置为在其上承载衬底，位于衬底支撑组件的表面上。 处理平台和分段平台各自包括单独的基板支撑组件，其可以通过单独的旋转轨道机构旋转。 每个旋转轨道机构能够支撑基板支撑组件并且连续旋转由基板载体承载并且设置在基板支撑组件上的多个基板。 因此，每个基板通过至少一个淋浴喷头站和至少一个缓冲站进行处理，所述至少一个缓冲站位于处理平台的旋转轨道机构上方的距离处。 每个基板可以在处理平台和分段平台之间传送并进出基板处理系统。

公开(公告)号：US20130183835A1

公开(公告)日：2013-07-18

申请号：US13353063

申请日：2012-01-18

申请人： Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

发明人： Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

IPC分类号： H01L21/318

CPC分类号： H01L21/02167 ,  C23C16/345 ,  C23C16/56 ,  H01L21/0217 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/823807 ,  H01L29/7843

摘要： Methods and apparatus for forming conformal silicon nitride films at low temperatures on a substrate are provided. The methods of forming a silicon nitride layer include performing a deposition cycle including flowing a processing gas mixture into a processing chamber having a substrate therein, wherein the processing gas mixture comprises precursor gas molecules having labile silicon to nitrogen, silicon to carbon, or nitrogen to carbon bonds, activating the precursor gas at a temperature between about 20° C. to about 480° C. by preferentially breaking labile bonds to provide one or more reaction sites along a precursor gas molecule, forming a precursor material layer on the substrate, wherein the activated precursor gas molecules bond with a surface on the substrate at the one or more reaction sites, and performing a plasma treatment process on the precursor material layer to form a conformal silicon nitride layer.

摘要翻译： 提供了在基板上在低温下形成共形氮化硅膜的方法和装置。 形成氮化硅层的方法包括进行沉积循环，包括使处理气体混合物流入其中具有衬底的处理室，其中处理气体混合物包含具有不稳定硅到氮，硅到碳或氮的前体气体分子， 碳键，在约20℃至约480℃的温度下活化前体气体，通过优先断开不稳定键以提供沿着前体气体分子的一个或多个反应位点，在基底上形成前体材料层，其中 活化的前体气体分子与一个或多个反应位点处的衬底上的表面结合，并对前体材料层进行等离子体处理工艺以形成共形氮化硅层。

公开(公告)号：US08445075B2

公开(公告)日：2013-05-21

申请号：US12975833

申请日：2010-12-22

申请人： Huiwen Xu ,  Mei-Yee Shek ,  Li-Qun Xia ,  Amir Al-Bayati ,  Derek Witty ,  Hichem M'Saad

发明人： Huiwen Xu ,  Mei-Yee Shek ,  Li-Qun Xia ,  Amir Al-Bayati ,  Derek Witty ,  Hichem M'Saad

IPC分类号： B05D3/10

CPC分类号： C23C16/308 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834

摘要： Methods of processing films on substrates are provided. In one aspect, the methods comprise treating a patterned low dielectric constant film after a photoresist is removed from the film by depositing a thin layer comprising silicon, carbon, and optionally oxygen and/or nitrogen on the film. The thin layer provides a carbon-rich, hydrophobic surface for the patterned low dielectric constant film. The thin layer also protects the low dielectric constant film from subsequent wet cleaning processes and penetration by precursors for layers that are subsequently deposited on the low dielectric constant film.

摘要翻译： 提供了在基板上处理膜的方法。 在一个方面，所述方法包括在通过在膜上沉积包含硅，碳和任选的氧和/或氮的薄层来从膜去除光致抗蚀剂之后处理图案化的低介电常数膜。 薄层为图案化的低介电常数膜提供了富含碳的疏水性表面。 薄层还保护低介电常数膜免于随后的湿法清洗工艺和前体渗透，随后沉积在低介电常数膜上。