公开(公告)号：US07651934B2

公开(公告)日：2010-01-26

申请号：US11385037

申请日：2006-03-20

申请人： Dmitry Lubomirsky ,  Timothy W. Weidman ,  Arulkumar Shanmugasundram ,  Nicolay Y. Kovarsky ,  Kapila Wijekoon

发明人： Dmitry Lubomirsky ,  Timothy W. Weidman ,  Arulkumar Shanmugasundram ,  Nicolay Y. Kovarsky ,  Kapila Wijekoon

IPC分类号： H01L21/20 ,  H01L21/3205 ,  H01L21/4763

CPC分类号： H01L21/288 ,  C23C18/1608 ,  C23C18/165 ,  C23C18/1831 ,  C23C18/38 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76874

摘要： Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition process. In one example, a copper electroless deposition solution contains levelers to form convexed or concaved copper surfaces. In another example, a seed layer is selectively deposited on the bottom surface of the aperture while leaving the sidewalls substantially free of the seed material during a collimated PVD process. In another example, the seed layer is conformably deposited by a PVD process and subsequently, a portion of the seed layer and the underlayer are plasma etched to expose an underlying contact surface. In another example, a ruthenium seed layer is formed on an exposed contact surface by an ALD process utilizing the chemical precursor ruthenium tetroxide.

摘要翻译： 本发明的实施例提供了通过在特征内沉积种子层并随后在无电沉积工艺期间用含铜材料填充该特征而在基底上的接触特征内形成导电材料的方法。 在一个实例中，铜无电解沉积溶液含有形成凸形或凹陷铜表面的矫直机。 在另一个实例中，在准直的PVD工艺期间，将籽晶层选择性地沉积在孔的底表面上，同时留下基本上不含种子材料的侧壁。 在另一个实例中，种子层通过PVD工艺顺应地沉积，随后种子层和底层的一部分被等离子体蚀刻以暴露下面的接触表面。 在另一个实例中，通过使用化学前体四氧化钌的ALD工艺在暴露的接触表面上形成钌籽晶层。

公开(公告)号：US20090277587A1

公开(公告)日：2009-11-12

申请号：US12210940

申请日：2008-09-15

申请人： Dmitry Lubomirsky ,  Qiwei Liang ,  Jang Gyoo Yang

发明人： Dmitry Lubomirsky ,  Qiwei Liang ,  Jang Gyoo Yang

IPC分类号： H01L21/3065 ,  H01L21/306

CPC分类号： C23C16/45565 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45574 ,  C23C16/507 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244

摘要： Substrate processing systems are described that may include a processing chamber having an interior capable of holding an internal chamber pressure different from an external chamber pressure. The systems may also include a remote plasma system operable to generate a plasma outside the interior of the processing chamber. In addition, the systems may include a first process gas channel operable to transport a first process gas from the remote plasma system to the interior of the processing chamber, and a second process gas channel operable to transport a second process gas that is not treated by the remote plasma system. The second process gas channel has a distal end that opens into the interior of the processing chamber, and that is at least partially surrounded by the first process gas channel.

摘要翻译： 描述了可以包括具有能够保持不同于外部室压力的内部室压力的内部的处理室的基板处理系统。 该系统还可以包括可操作以在处理室内部产生等离子体的远程等离子体系统。 此外，系统可以包括可操作以将第一处理气体从远程等离子体系统输送到处理室的内部的第一处理气体通道，以及可操作以输送未被处理室处理的第二处理气体的第二处理气体通道 远程等离子体系统。 第二工艺气体通道具有通向处理室内部的远端，并且至少部分地被第一工艺气体通道包围。

公开(公告)号：US20090120464A1

公开(公告)日：2009-05-14

申请号：US12265641

申请日：2008-11-05

申请人： Muhammad M. Rasheed ,  Dmitry Lubomirsky ,  James Santosa

发明人： Muhammad M. Rasheed ,  Dmitry Lubomirsky ,  James Santosa

IPC分类号： C23C16/00 ,  G05D7/00

CPC分类号： H01L21/67069 ,  C23C16/4412 ,  H01J37/32834 ,  H01J37/32862 ,  Y10S134/902 ,  Y10T137/85978 ,  Y10T137/87571

摘要： An exhaust foreline for purging fluids from a semiconductor fabrication chamber is described. The foreline may include a first, second and third ports independently coupled to the chamber. A semiconductor fabrication system is also described that includes a substrate chamber that has a first, second and third interface port. The system may also include a multi-port foreline that has a first, second and third port, where the first foreline port is coupled to the first interface port, the second foreline port is coupled to the second interface port, and the third foreline port is coupled to the third interface port. The system may further include an exhaust vacuum coupled to the multi-port foreline.

摘要翻译： 描述了用于从半导体制造室清洗流体的排气前沿。 前排可以包括独立地联接到室的第一，第二和第三端口。 还描述了包括具有第一，第二和第三接口端口的衬底室的半导体制造系统。 该系统还可以包括具有第一，第二和第三端口的多端口前级线，其中第一前级线路端口耦合到第一接口端口，第二前级线路端口耦合到第二接口端口，并且第三前级端口 耦合到第三接口端口。 该系统还可以包括耦合到多端口前级管线的排气真空。

公开(公告)号：US20090034149A1

公开(公告)日：2009-02-05

申请号：US11888341

申请日：2007-07-31

申请人： Dmitry Lubomirsky ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Kadthala Ramaya Narendrnath ,  Muhammad Rasheed ,  Tony Kaushal

发明人： Dmitry Lubomirsky ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Kadthala Ramaya Narendrnath ,  Muhammad Rasheed ,  Tony Kaushal

IPC分类号： H01L21/683

CPC分类号： H01L21/6833 ,  B23P6/00 ,  H02N13/00

摘要： A method for refurbishing at least a portion of an electrostatic chuck. The method comprises removing a first dielectric component from a fluid distribution element of the electrostatic chuck and replacing the first dielectric component with a second dielectric component.

摘要翻译： 一种用于对至少一部分静电卡盘进行翻新的方法。 该方法包括从静电卡盘的流体分配元件移除第一介质成分并用第二介电元件代替第一介电元件。

公开(公告)号：US20080188087A1

公开(公告)日：2008-08-07

申请号：US11670728

申请日：2007-02-02

申请人： ROBERT CHEN ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

发明人： ROBERT CHEN ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/507 ,  H01J37/321 ,  H01J37/32174 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31604 ,  H01L21/31608

摘要： A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.

公开(公告)号：US20080185284A1

公开(公告)日：2008-08-07

申请号：US11670662

申请日：2007-02-02

申请人： Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

发明人： Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

IPC分类号： H01L21/3065 ,  C23C16/00 ,  H05F3/00

CPC分类号： H01J37/321

摘要： A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.

摘要翻译： 提供一种用于半导体处理系统中的线圈以在腔室中产生具有磁场的等离子体。 线圈包括第一线圈段，第二线圈段和内部平衡电容器。 第一线圈段具有第一端和第二端。 线圈段的第一端适于连接到电源。 第二线圈段具有第一和第二端。 第一线圈段的第二端适于连接到外部平衡电容器。 内部平衡电容器串联连接在第一线圈段的第二端和第二线圈段的第一端之间。 内部平衡电容器和线圈段适于沿着第一线圈段提供基本上与第二线圈段的虚拟接地对准的电压峰值。

公开(公告)号：US20080063810A1

公开(公告)日：2008-03-13

申请号：US11508524

申请日：2006-08-23

申请人： Soonam Park ,  Qiwei Liang ,  Zhong Qiang ,  Dmitry Lubomirsky ,  Young S. Lee

发明人： Soonam Park ,  Qiwei Liang ,  Zhong Qiang ,  Dmitry Lubomirsky ,  Young S. Lee

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： H01J37/32972 ,  C23C16/4401 ,  C23C16/52 ,  H01J37/32935

摘要： The process state of a chamber after a maintenance procedure can be monitored in-situ in order to ensure that the chamber is ready for processing, while minimizing waste and downtime due to aftereffects of the maintenance procedure. The composition of a bulk plasma in a process chamber can be analyzed using an analytical tool to capture the emission spectrum of the plasma. The spectrum can be analyzed to generate a model of the current chamber conditions, which can be compared to a model of ideal chamber conditions using a statistical analysis approach such as multivariate primary component analysis. If the current and ideal models match to within a set confidence level, the chamber conditions are acceptable for processing devices, and any processing of cycling workpieces or other plasma-cleansing processes can be stopped.

摘要翻译： 可以在现场监测维护程序之后的室的过程状态，以确保室准备好进行处理，同时将由于维护过程的后期影响引起的浪费和停机时间最小化。 可以使用分析工具来分析处理室中的体积等离子体的组成以捕获等离子体的发射光谱。 可以分析光谱以产生当前室条件的模型，其可以使用诸如多变量主成分分析的统计分析方法与理想室条件的模型进行比较。 如果当前和理想模型与设定的置信水平相匹配，则腔室条件对于加工设备是可接受的，并且可以停止循环工件或其他等离子体清洁过程的任何处理。

公开(公告)号：US07273535B2

公开(公告)日：2007-09-25

申请号：US10664277

申请日：2003-09-17

申请人： Nicolay Y. Kovarsky ,  Dmitry Lubomirsky ,  Yevgeniy (Eugene) Rabinovich

发明人： Nicolay Y. Kovarsky ,  Dmitry Lubomirsky ,  Yevgeniy (Eugene) Rabinovich

IPC分类号： C25D5/00 ,  C25D17/00 ,  C25B9/00

CPC分类号： C25D17/12 ,  B01D61/44 ,  B01D71/36 ,  C25D7/123 ,  C25D17/001 ,  C25D17/10 ,  C25D21/12

摘要： A method and apparatus for plating a metal onto a substrate. The apparatus includes a fluid basin configured to contain a plating solution, an anode fluid volume positioned in a lower portion of the fluid basin, a cathode fluid volume positioned in an upper portion of the fluid basin, an ionic membrane positioned to separate the anode fluid volume from the cathode fluid volume, a plating electrode centrally positioned in the anode fluid volume, and a deplating electrode positioned adjacent the plating electrode in the anode fluid volume.

摘要翻译： 一种用于将金属电镀到基底上的方法和装置。 该装置包括流体池，其构造成容纳镀液，位于流体槽的下部的阳极流体体积，位于流体池的上部的阴极流体体积，定位成将阳极流体分离的离子膜 来自阴极流体体积的体积，位于阳极流体体积中心的电镀电极，以及位于阳极流体体积内的电镀电极附近的脱镀电极。

公开(公告)号：US20070111519A1

公开(公告)日：2007-05-17

申请号：US11428230

申请日：2006-06-30

申请人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Allen D'Ambra ,  Timothy Weidman ,  Michael Stewart ,  Eugene Rabinovich ,  Svetlana Sherman ,  Manoocher Birang ,  Yaxin Wang ,  Michael Yang ,  Bradley Hansen

发明人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Allen D'Ambra ,  Timothy Weidman ,  Michael Stewart ,  Eugene Rabinovich ,  Svetlana Sherman ,  Manoocher Birang ,  Yaxin Wang ,  Michael Yang ,  Bradley Hansen

IPC分类号： H01L21/44

CPC分类号： H01L21/288 ,  C23C18/1619 ,  C23C18/1653 ,  C23C18/168 ,  C23C18/1682 ,  C23C18/1685 ,  C23C18/1689 ,  C25D7/123 ,  C25D17/001 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02087 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/67051 ,  H01L21/6719 ,  H01L21/6723 ,  H01L21/67751 ,  H01L21/68785 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76873 ,  H01L21/76874

摘要： Embodiments of the invention provide methods for depositing a material onto a surface of a substrate by using one or more electroless, electrochemical plating, CVD and/or ALD processes. Embodiments of the invention provide a method for depositing a seed layer on a substrate with an electroless process and to subsequently fill interconnect features on the substrate with an ECP process on a single substrate processing platform. Other aspects provide a method for depositing a seed layer on a substrate, fill interconnect features on a substrate, or sequentially deposit both a seed layer and fill interconnect features on the substrate. One embodiment provides a method for forming a capping layer over substrate interconnects. Methods include the use of a vapor dryer for pre- and post-deposition cleaning of substrates as well as a brush box chamber for post-deposition cleaning.

摘要翻译： 本发明的实施方案提供了通过使用一种或多种化学镀，CVD和/或ALD工艺将材料沉积到衬底的表面上的方法。 本发明的实施方案提供了一种用于在基板上沉积种子层的方法，该方法具有无电解方法，并随后在单个基板处理平台上用ECP工艺填充基板上的互连特征。 其它方面提供了一种用于在衬底上沉积种子层的方法，在衬底上填充互连特征，或者在衬底上顺序地沉积种子层和填充互连特征。 一个实施例提供了一种在衬底互连上形成覆盖层的方法。 方法包括使用蒸气干燥器进行基板的沉积前和沉积后清洁以及用于后沉积清洁的刷盒室。

公开(公告)号：US20070095367A1

公开(公告)日：2007-05-03

申请号：US11262445

申请日：2005-10-28

申请人： Yaxin Wang ,  Fang Mei ,  Van Nguyen ,  Arulkumar Shanmugasundram ,  Dmitry Lubomirsky

发明人： Yaxin Wang ,  Fang Mei ,  Van Nguyen ,  Arulkumar Shanmugasundram ,  Dmitry Lubomirsky

IPC分类号： B08B7/04 ,  B08B3/00 ,  B08B7/00

CPC分类号： H01L21/67046

摘要： The present invention generally provides an apparatus and method of processing substrates to uniformly remove any residual contamination from the surface of a substrate by use of an appropriate cleaning chemistry and contact with a cleaning medium. In one embodiment, the cleaning medium, such as is a brush or a scrubbing component that is positioned in a cleaning module. In one embodiment, the process of cleaning the surface of a substrate W is completed by “scrubbing” the surface of the substrate while using a cleaning solution that is selected to chemically etch a material from the surface of the substrate. In one aspect, the amount of material removed from the surface of a substrate is only about 10-30 Angstroms (Å). In one embodiment, the substrate surface is cleaned by use of a scrubbing process that uses a fluid that doesn't react with the exposed materials on the surface of the substrate. The fluid is thus used to lubricate the surfaces in contact and to carry any abraded material away from the surface of the substrate. In one aspect, the fluid may be DI water. In one aspect, it may be desirable to add ultrasonic or megasonic agitation to the substrate during the cleaning process to help remove or dislodge material from the surface of the substrate.

摘要翻译： 本发明总体上提供了一种加工基材的装置和方法，以通过使用适当的清洁化学品和与清洁介质的接触来均匀地除去基材表面的任何残余污染物。 在一个实施例中，清洁介质，例如位于清洁模块中的刷子或擦洗部件。 在一个实施例中，清洁衬底W的表面的过程通过“擦洗”衬底的表面而完成，同时使用选择用于从衬底的表面化学蚀刻材料的清洁溶液。 在一个方面，从衬底的表面去除的材料的量仅为约10-30埃（）。 在一个实施例中，通过使用使用不与衬底表面上暴露的材料反应的流体的洗涤过程来清洁衬底表面。 因此，流体用于润滑接触表面并将任何磨损的材料携带离开基底的表面。 在一个方面，流体可以是去离子水。 在一个方面，可能期望在清洁过程中向基底添加超声波或兆声波搅拌以帮助从衬底的表面移除或移除材料。