公开(公告)号：US20070095367A1

公开(公告)日：2007-05-03

申请号：US11262445

申请日：2005-10-28

申请人： Yaxin Wang ,  Fang Mei ,  Van Nguyen ,  Arulkumar Shanmugasundram ,  Dmitry Lubomirsky

发明人： Yaxin Wang ,  Fang Mei ,  Van Nguyen ,  Arulkumar Shanmugasundram ,  Dmitry Lubomirsky

IPC分类号： B08B7/04 ,  B08B3/00 ,  B08B7/00

CPC分类号： H01L21/67046

摘要： The present invention generally provides an apparatus and method of processing substrates to uniformly remove any residual contamination from the surface of a substrate by use of an appropriate cleaning chemistry and contact with a cleaning medium. In one embodiment, the cleaning medium, such as is a brush or a scrubbing component that is positioned in a cleaning module. In one embodiment, the process of cleaning the surface of a substrate W is completed by “scrubbing” the surface of the substrate while using a cleaning solution that is selected to chemically etch a material from the surface of the substrate. In one aspect, the amount of material removed from the surface of a substrate is only about 10-30 Angstroms (Å). In one embodiment, the substrate surface is cleaned by use of a scrubbing process that uses a fluid that doesn't react with the exposed materials on the surface of the substrate. The fluid is thus used to lubricate the surfaces in contact and to carry any abraded material away from the surface of the substrate. In one aspect, the fluid may be DI water. In one aspect, it may be desirable to add ultrasonic or megasonic agitation to the substrate during the cleaning process to help remove or dislodge material from the surface of the substrate.

摘要翻译： 本发明总体上提供了一种加工基材的装置和方法，以通过使用适当的清洁化学品和与清洁介质的接触来均匀地除去基材表面的任何残余污染物。 在一个实施例中，清洁介质，例如位于清洁模块中的刷子或擦洗部件。 在一个实施例中，清洁衬底W的表面的过程通过“擦洗”衬底的表面而完成，同时使用选择用于从衬底的表面化学蚀刻材料的清洁溶液。 在一个方面，从衬底的表面去除的材料的量仅为约10-30埃（）。 在一个实施例中，通过使用使用不与衬底表面上暴露的材料反应的流体的洗涤过程来清洁衬底表面。 因此，流体用于润滑接触表面并将任何磨损的材料携带离开基底的表面。 在一个方面，流体可以是去离子水。 在一个方面，可能期望在清洁过程中向基底添加超声波或兆声波搅拌以帮助从衬底的表面移除或移除材料。

公开(公告)号：US20070099417A1

公开(公告)日：2007-05-03

申请号：US11329785

申请日：2006-01-10

申请人： Hongbin Fang ,  Timothy Weidman ,  Fang Mei ,  Yaxin Wang ,  Arulkumar Shanmugasundram ,  Christopher Bencher ,  Mehul Naik

发明人： Hongbin Fang ,  Timothy Weidman ,  Fang Mei ,  Yaxin Wang ,  Arulkumar Shanmugasundram ,  Christopher Bencher ,  Mehul Naik

IPC分类号： H01L21/469

CPC分类号： H01L21/76843 ,  H01L21/76829 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76864

摘要： A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on the substrate, reducing oxide formation on the capping layer, and then depositing a dielectric material. A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on a substrate, exposing the capping layer to a plasma, heating the substrate to more than about 100° C., and depositing a low dielectric constant material.

摘要翻译： 一种用于处理半导体衬底的方法和装置，包括在形成在衬底上的导电材料上沉积覆盖层，减少覆盖层上的氧化物形成，然后沉积电介质材料。 一种用于处理半导体衬底的方法和装置，包括在形成在衬底上的导电材料上沉积覆盖层，将覆盖层暴露于等离子体，将衬底加热到​​大于约100℃，以及沉积低介电常数材料 。

公开(公告)号：US07910476B2

公开(公告)日：2011-03-22

申请号：US12240744

申请日：2008-09-29

申请人： Hongbin Fang ,  Timothy Weidman ,  Fang Mei ,  Yaxin Wang ,  Arulkumar Shanmugasundram ,  Christopher D. Bencher ,  Mehul B. Naik

发明人： Hongbin Fang ,  Timothy Weidman ,  Fang Mei ,  Yaxin Wang ,  Arulkumar Shanmugasundram ,  Christopher D. Bencher ,  Mehul B. Naik

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/76829 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76864

摘要： A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on the substrate, reducing oxide formation on the capping layer, and then depositing a dielectric material. A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on a substrate, exposing the capping layer to a plasma, heating the substrate to more than about 100° C., and depositing a low dielectric constant material.

摘要翻译： 一种用于处理半导体衬底的方法和装置，包括在形成在衬底上的导电材料上沉积覆盖层，减少覆盖层上的氧化物形成，然后沉积电介质材料。 一种用于处理半导体衬底的方法和装置，包括在形成在衬底上的导电材料上沉积覆盖层，将覆盖层暴露于等离子体，将衬底加热到​​大于约100℃，以及沉积低介电常数材料 。

公开(公告)号：US20090029544A1

公开(公告)日：2009-01-29

申请号：US12240744

申请日：2008-09-29

申请人： Hongbin Fang ,  Timothy Weidman ,  Fang Mei ,  Yaxin Wang ,  Arulkumar Shanmugasundram ,  Christopher D. Bencher ,  Mehul B. Naik

发明人： Hongbin Fang ,  Timothy Weidman ,  Fang Mei ,  Yaxin Wang ,  Arulkumar Shanmugasundram ,  Christopher D. Bencher ,  Mehul B. Naik

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/76829 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76864

摘要： A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on the substrate, reducing oxide formation on the capping layer, and then depositing a dielectric material. A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on a substrate, exposing the capping layer to a plasma, heating the substrate to more than about 100° C., and depositing a low dielectric constant material.

摘要翻译： 一种用于处理半导体衬底的方法和装置，包括在形成在衬底上的导电材料上沉积覆盖层，减少覆盖层上的氧化物形成，然后沉积电介质材料。 一种用于处理半导体衬底的方法和装置，包括在形成在衬底上的导电材料上沉积覆盖层，将覆盖层暴露于等离子体，将衬底加热到​​大于约100℃，以及沉积低介电常数材料 。

公开(公告)号：US07514353B2

公开(公告)日：2009-04-07

申请号：US11385344

申请日：2006-03-20

申请人： Timothy W. Weidman ,  Kapila P. Wijekoon ,  Zhize Zhu ,  Avgerinos V. (Jerry) Gelatos ,  Amit Khandelwal ,  Arulkumar Shanmugasundram ,  Michael X. Yang ,  Fang Mei ,  Farhad K. Moghadam

发明人： Timothy W. Weidman ,  Kapila P. Wijekoon ,  Zhize Zhu ,  Avgerinos V. (Jerry) Gelatos ,  Amit Khandelwal ,  Arulkumar Shanmugasundram ,  Michael X. Yang ,  Fang Mei ,  Farhad K. Moghadam

IPC分类号： H01L21/4763

CPC分类号： C23C18/1678 ,  B82Y30/00 ,  C23C16/0227 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C18/1608 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/31 ,  C23C18/32 ,  C23C18/34 ,  C23C18/38 ,  C23C18/40 ,  C23C18/48 ,  C25D5/34 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76874 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention generally provide methods of filling contact level features formed in a semiconductor device by depositing a barrier layer over the contact feature and then filing the layer using an PVD, CVD, ALD, electrochemical plating process (ECP) and/or electroless deposition processes. In one embodiment, the barrier layer has a catalytically active surface that will allow the electroless deposition of a metal on the barrier layer. In one aspect, the electrolessly deposited metal is copper or a copper alloy. In one aspect, the contact level feature is filled with a copper alloy by use of an electroless deposition process. In another aspect, a copper alloy is used to from a thin conductive copper layer that is used to subsequently fill features with a copper containing material by use of an ECP, PVD, CVD, and/or ALD deposition process. In one embodiment, a portion of the barrier layer is purposely allowed to react with traces of residual oxide at the silicon junction of the contact level feature to form a low resistance connection.

摘要翻译： 本发明的实施例通常提供了通过在接触特征上沉积阻挡层然后使用PVD，CVD，ALD，电化学电镀工艺（ECP）和/或无电镀沉积来填充层来填充形成在半导体器件中的接触电平特征的方法 过程。 在一个实施例中，阻挡层具有催化活性表面，其将允许在阻挡层上无电沉积金属。 一方面，无电沉积金属是铜或铜合金。 在一个方面，通过使用无电镀沉积工艺，用铜合金填充接触层的特征。 另一方面，铜合金用于从导电铜层薄层中，该铜层用于随后通过使用ECP，PVD，CVD和/或ALD沉积工艺用含铜材料填充特征。 在一个实施例中，阻挡层的一部分有意地被允许与触点电平特征的硅结处的痕迹的残余氧化物反应以形成低电阻连接。

公开(公告)号：US20060251800A1

公开(公告)日：2006-11-09

申请号：US11385344

申请日：2006-03-20

申请人： Timothy Weidman ,  Kapila Wijekoon ,  Zhize Zhu ,  Avgerinos Gelatos ,  Amit Khandelwal ,  Arulkumar Shanmugasundram ,  Michael Yang ,  Fang Mei ,  Farhad Moghadam

发明人： Timothy Weidman ,  Kapila Wijekoon ,  Zhize Zhu ,  Avgerinos Gelatos ,  Amit Khandelwal ,  Arulkumar Shanmugasundram ,  Michael Yang ,  Fang Mei ,  Farhad Moghadam

IPC分类号： B05D5/12

CPC分类号： C23C18/1678 ,  B82Y30/00 ,  C23C16/0227 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C18/1608 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/31 ,  C23C18/32 ,  C23C18/34 ,  C23C18/38 ,  C23C18/40 ,  C23C18/48 ,  C25D5/34 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76874 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention generally provide methods of filling contact level features formed in a semiconductor device by depositing a barrier layer over the contact feature and then filing the layer using an PVD, CVD, ALD, electrochemical plating process (ECP) and/or electroless deposition processes. In one embodiment, the barrier layer has a catalytically active surface that will allow the electroless deposition of a metal on the barrier layer. In one aspect, the electrolessly deposited metal is copper or a copper alloy. In one aspect, the contact level feature is filled with a copper alloy by use of an electroless deposition process. In another aspect, a copper alloy is used to from a thin conductive copper layer that is used to subsequently fill features with a copper containing material by use of an ECP, PVD, CVD, and/or ALD deposition process. In one embodiment, a portion of the barrier layer is purposely allowed to react with traces of residual oxide at the silicon junction of the contact level feature to form a low resistance connection.

公开(公告)号：US20050170650A1

公开(公告)日：2005-08-04

申请号：US10970354

申请日：2004-10-21

申请人： Hongbin Fang ,  Ramin Emami ,  Timothy Weidman ,  Arulkumar Shanmugasundram ,  Fang Mei

发明人： Hongbin Fang ,  Ramin Emami ,  Timothy Weidman ,  Arulkumar Shanmugasundram ,  Fang Mei

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02074 ,  C23C18/1893 ,  C23C18/50 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76874 ,  H01L21/76883

摘要： In one embodiment, a method for activating a metal layer prior to depositing a cobalt-containing capping layer is provided which includes exposing the metal layer to an electroless activation solution to deposit a palladium layer on the metal layer and depositing the cobalt-containing capping layer on the palladium layer. The electroless activation solution contains palladium nitrate at a concentration in a range from about 0.01 mM to about 1.0 mM, nitric acid at a concentration in a range from about 0.01 mM to about 3.0 mM and water. In another embodiment, the electroless activation solution contains palladium nitrate at a concentration in a range from about 0.01 mM to about 1.0 mM, methanesulfonic acid at a concentration in a range from about 0.01 mM to about 3.0 mM and water.

摘要翻译： 在一个实施方案中，提供了在沉积含钴覆盖层之前激活金属层的方法，其包括将金属层暴露于无电解活化溶液以在钯金属层上沉积钯层并沉积含钴覆盖层 在钯层上。 无电解激活溶液含有浓度范围为约0.01mM至约1.0mM的硝酸钯，浓度为约0.01mM至约3.0mM的硝酸和水。 在另一个实施方案中，无电解活化溶液含有浓度范围为约0.01mM至约1.0mM的硝酸钯，浓度为约0.01mM至约3.0mM的甲磺酸和水。

公开(公告)号：US20200255388A1

公开(公告)日：2020-08-13

申请号：US16499050

申请日：2018-03-29

申请人： Jia ZHOU ,  Zhiqing Liu ,  Na Ye ,  Fang Mei ,  Xiaodong Cheng

发明人： Jia ZHOU ,  Zhiqing Liu ,  Na Ye ,  Fang Mei ,  Xiaodong Cheng

IPC分类号： C07D261/08 ,  C07D261/20 ,  A61P31/04

摘要： Embodiments are directed to a series of novel EPAC antagonists that are designed, synthesized and evaluated in an effort to develop diversified analogues based on the scaffold of the previously identified high-throughput (HTS) hit ESI-09.

公开(公告)号：US07829356B2

公开(公告)日：2010-11-09

申请号：US12212535

申请日：2008-09-17

申请人： Fang Mei ,  David Tanner ,  Tzay-Fa Su

发明人： Fang Mei ,  David Tanner ,  Tzay-Fa Su

IPC分类号： G01R31/26

CPC分类号： H01L31/0392 ,  H01L31/022425 ,  H01L31/03923 ,  H01L31/186 ,  Y02E10/541 ,  Y02P70/521

摘要： A method and apparatus for improving a thin film scribing procedure is presented. Embodiments of the invention include a method and apparatus for determining a scribe setting for removal of an absorber layer of a photovoltaic device that improves contact resistance between a back contact layer and a front contact layer of the device.

摘要翻译： 提出了一种改善薄膜划线程序的方法和装置。 本发明的实施例包括一种用于确定用于去除光电装置的吸收层的划线设置的方法和装置，其改善了设备背面接触层和前接触层之间的接触电阻。

公开(公告)号：US20090077805A1

公开(公告)日：2009-03-26

申请号：US12202199

申请日：2008-08-29

申请人： Robert Z. BACHRACH ,  Yong-Kee Chae ,  Soo Young Choi ,  Nicholas G.J. De Vries ,  Yacov Elgar ,  Eric A. Englhardt ,  Michael R. Frei ,  Charles Gay ,  Parris Hawkins ,  Choi (Gene) Ho ,  James Craig Hunter ,  Penchala N. Kankanala ,  Liwei Li ,  Wing Hoo (Hendrick) Lo ,  Danny Cam Toan Lu ,  Fang Mei ,  Stephen P. Murphy ,  Srujal (Steve) Patel ,  Matthew J.B. Saunders ,  Asaf Schlezinger ,  Shuran Sheng ,  Tzay-Fa (Jeff) Su ,  Jeffrey S. Sullivan ,  David Tanner ,  Teresa Trowbridge ,  Brice Walker ,  John M. White ,  Tae K. Won

发明人： Robert Z. BACHRACH ,  Yong-Kee Chae ,  Soo Young Choi ,  Nicholas G.J. De Vries ,  Yacov Elgar ,  Eric A. Englhardt ,  Michael R. Frei ,  Charles Gay ,  Parris Hawkins ,  Choi (Gene) Ho ,  James Craig Hunter ,  Penchala N. Kankanala ,  Liwei Li ,  Wing Hoo (Hendrick) Lo ,  Danny Cam Toan Lu ,  Fang Mei ,  Stephen P. Murphy ,  Srujal (Steve) Patel ,  Matthew J.B. Saunders ,  Asaf Schlezinger ,  Shuran Sheng ,  Tzay-Fa (Jeff) Su ,  Jeffrey S. Sullivan ,  David Tanner ,  Teresa Trowbridge ,  Brice Walker ,  John M. White ,  Tae K. Won

IPC分类号： H01L31/18 ,  H05K13/00

CPC分类号： H01L21/67236 ,  B23K26/364 ,  B26F3/002 ,  B26F3/004 ,  B65G49/064 ,  B65G2249/02 ,  B65G2249/04 ,  C03B33/03 ,  C03B33/033 ,  H01L21/67132 ,  H01L21/67712 ,  H01L21/67715 ,  H01L21/67721 ,  H01L21/67727 ,  H01L21/6776 ,  H01L31/022425 ,  H01L31/03921 ,  H01L31/0504 ,  H01L31/075 ,  H02S50/00 ,  H02S50/10 ,  Y02E10/548 ,  Y02P40/57 ,  Y10T29/49002 ,  Y10T29/49355 ,  Y10T29/5196 ,  Y10T29/53113 ,  Y10T29/5313 ,  Y10T29/5317 ,  Y10T29/53187 ,  Y10T29/53365 ,  Y10T29/53417 ,  Y10T225/10 ,  Y10T225/325 ,  Y10T225/329

摘要： The present invention generally relates to a system that can be used to form a photovoltaic device, or solar cell, using processing modules that are adapted to perform one or more steps in the solar cell formation process. The automated solar cell fab is generally an arrangement of automated processing modules and automation equipment that is used to form solar cell devices. The automated solar fab will thus generally comprise a substrate receiving module that is adapted to receive a substrate, one or more absorbing layer deposition cluster tools having at least one processing chamber that is adapted to deposit a silicon-containing layer on a surface of the substrate, one or more back contact deposition chambers, one or more material removal chambers, a solar cell encapsulation device, an autoclave module, an automated junction box attaching module, and one or more quality assurance modules that are adapted to test and qualify the completely formed solar cell device.

摘要翻译： 本发明一般涉及一种可用于形成光伏器件或太阳能电池的系统，该系统使用适于在太阳能电池形成过程中执行一个或多个步骤的处理模块。 自动化太阳能电池制造厂通常是用于形成太阳能电池器件的自动化处理模块和自动化设备的布置。 因此，自动化太阳能工厂将通常包括适于接收衬底的衬底接收模块，一个或多个吸收层沉积簇工具，其具有至少一个处理室，该处理室适于在衬底的表面上沉积含硅层 ，一个或多个背接触沉积室，一个或多个材料去除室，太阳能电池封装装置，高压釜模块，自动接线盒附接模块和一个或多个质量保证模块，其适于测试和限定完全形成 太阳能电池装置。