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    Epitaxial growth of p-type cladding regions using nitrogen gas for a gallium and nitrogen containing laser diode
    111.
    发明授权
    Epitaxial growth of p-type cladding regions using nitrogen gas for a gallium and nitrogen containing laser diode 有权
    使用氮气对含镓和氮的激光二极管进行p型包层的外延生长

    公开(公告)号：US09564736B1

    公开(公告)日：2017-02-07

    申请号：US14315687

    申请日：2014-06-26

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Po Shan Hsu ,  Melvin McLaurin ,  Thiago P. Melo ,  James W. Raring

    IPC: H01S5/20 ,  H01S5/22 ,  H01S5/32

    CPC classification number: H01S5/34333 ,  H01S5/0425 ,  H01S5/20 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/222 ,  H01S5/3063 ,  H01S5/3086 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/3214 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/3218 ,  H01S5/3219 ,  H01S5/34346 ,  H01S2304/02 ,  H01S2304/04

    Abstract: In an example, the present invention provides a method for fabricating a light emitting device configured as a Group III-nitride based laser device. The method also includes forming a gallium containing epitaxial material overlying the surface region of a substrate member. The method includes forming a p-type (Al,In,Ga)N waveguiding material overlying the gallium containing epitaxial material under a predetermined process condition. The method includes maintaining the predetermined process condition such that an environment surrounding a growth of the p-type (Al,In,Ga)N waveguide material is substantially a molecular N2 rich gas environment. The method includes maintaining a temperature ranging from 725 C to 925 C during the formation of the p-type (Al,In,Ga)N waveguide material, although there may be variations. In an example, the predetermined process condition is substantially free from molecular H2 gas.

    Abstract translation: 在一个实例中，本发明提供一种制造被配置为III族氮化物的激光器件的发光器件的方法。 该方法还包括形成覆盖衬底构件的表面区域的含镓外延材料。 该方法包括在预定工艺条件下形成覆盖含镓外延材料的p型（Al，In，Ga）N波导材料。 该方法包括维持预定的工艺条件，使得围绕p型（Al，In，Ga）N波导材料的生长的环境基本上是分子N2富含气体环境。 该方法包括在形成p型（Al，In，Ga）N波导材料期间保持725℃至925℃的温度，尽管可能存在变化。 在一个实例中，预定的工艺条件基本上不含分子H2气体。

    Gallium and nitrogen containing laser device having confinement region
    112.
    发明授权
    Gallium and nitrogen containing laser device having confinement region 有权
    具有限制区域的含氮和氮的激光装置

    公开(公告)号：US09520695B2

    公开(公告)日：2016-12-13

    申请号：US14480398

    申请日：2014-09-08

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Po Shan Hsu ,  Melvin McLaurin ,  James W. Raring ,  Alexander Stzein ,  Benyamin Buller

    IPC: H01L21/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/22 ,  H01S5/343

    CPC classification number: H01S5/34333 ,  H01S5/0202 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/22 ,  H01S2304/00

    Abstract: In an example, the present invention provides a method for fabricating a laser diode device. The method includes providing a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material; and a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material, and an interface region overlying the first transparent conductive oxide material. The method includes bonding the interface region to a handle substrate and subjecting the release material to an energy source to initiate release of the gallium and nitrogen containing substrate member.

    Abstract translation: 在一个实例中，本发明提供一种制造激光二极管器件的方法。 该方法包括提供包含表面区域，覆盖表面区域的剥离材料，含n型镓和氮的材料的含镓和氮的衬底构件; 覆盖n型含镓和氮的材料的有源区，p型含镓和氮的材料; 以及覆盖所述p型含镓和氮的材料的第一透明导电氧化物材料以及覆盖所述第一透明导电氧化物材料的界面区域。 该方法包括将界面区域粘合到手柄基板上，并将释放材料经受能量源以引发含镓和氮的衬底构件的释放。

    Laser diode device with a plurality of gallium and nitrogen containing substrates
    114.
    发明授权
    Laser diode device with a plurality of gallium and nitrogen containing substrates 有权
    具有多个含镓和氮的衬底的激光二极管器件

    公开(公告)号：US09401584B1

    公开(公告)日：2016-07-26

    申请号：US14931743

    申请日：2015-11-03

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  James W. Raring

    IPC: H01L29/20 ,  H01L21/20 ,  H01S5/00 ,  H01S5/22 ,  H01S5/343 ,  H01S5/042 ,  H01S5/02 ,  H01S5/028 ,  H01L23/00 ,  H01L33/50

    CPC classification number: H01S5/34333 ,  H01L24/29 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/50 ,  H01S5/00 ,  H01S5/0202 ,  H01S5/0206 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/3202

    Abstract: In an example, the present invention provides a gallium and nitrogen containing multilayered structure, and related method. The structure has a plurality of gallium and nitrogen containing semiconductor substrates, each of the gallium and nitrogen containing semiconductor substrates (“substrates”) having a plurality of epitaxially grown layers overlaying a top-side of each of the substrates. The structure has an orientation of a reference crystal direction for each of the substrates. The structure has a first handle substrate coupled to each of the substrates such that each of the substrates is aligned to a spatial region configured in a selected direction of the first handle substrate, which has a larger spatial region than a sum of a total backside region of plurality of the substrates to be arranged in a tiled configuration overlying the first handle substrate. The reference crystal direction for each of the substrates is parallel to the spatial region in the selected direction within 10 degrees or less. The structure has a first bonding medium provided between the first handle substrate and each of the substrate while maintaining the alignment between reference crystal orientation and the selected direction of the first handle substrate; and a processed region formed overlying each of the substrates configured concurrently while being bonded to the first handle substrate. Depending upon the embodiment, the processed region can include any combination of the aforementioned processing steps and/or steps.

    Abstract translation: 在一个实例中，本发明提供一种含镓和氮的多层结构及相关方法。 该结构具有多个含镓和氮的半导体衬底，每个含镓和氮的半导体衬底（“衬底”）具有覆盖每个衬底的顶侧的多个外延生长层。 该结构对于每个基板具有参考晶体方向的取向。 该结构具有耦合到每个基板的第一手柄基板，使得每个基板与沿第一手柄基板的选定方向配置的空间区域对齐，该空间区域具有比总背面区域 多个基板被布置成覆盖在第一手柄基板上的平铺构造。 每个基板的参考晶体方向在10度以内平行于选定方向的空间区域。 该结构具有第一接合介质，其设置在第一手柄基板和每个基板之间，同时保持参考晶体取向与第一手柄基板的选定方向之间的对准; 以及被形成为覆盖在被结合到第一手柄基板的同时构成的每个基板的处理区域。 根据实施例，经处理的区域可以包括上述处理步骤和/或步骤的任何组合。

    Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material
    116.
    发明授权
    Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material 有权
    制造具有改善基板材料用途的含镓和氮的轴承激光器件的方法

    公开(公告)号：US09362715B2

    公开(公告)日：2016-06-07

    申请号：US14176403

    申请日：2014-02-10

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Alexander Sztein ,  Melvin McLaurin ,  Po Shan Hsu ,  James W. Raring

    IPC: H01L21/00 ,  H01S5/02 ,  H01S5/022 ,  H01S5/32 ,  H01S5/343

    CPC classification number: H01S5/0203 ,  H01S5/0202 ,  H01S5/0205 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/3202 ,  H01S5/34333 ,  H01S5/34346

    Abstract: In an example, the present invention provides a method for manufacturing a gallium and nitrogen containing laser diode device. The method includes providing a gallium and nitrogen containing substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising of at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The method includes patterning the epitaxial material to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. The method includes transferring each of the plurality of dice to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch corresponding to the design width.

    Abstract translation: 在一个实例中，本发明提供一种制造含镓和氮的激光二极管器件的方法。 该方法包括提供具有表面区域并形成覆盖在表面区域上的外延材料的含镓和氮的衬底，所述外延材料包括n型包层区域，有源区域包括覆盖在n型包层上的至少一个有源层 区域和覆盖有源层区域的p型覆层区域。 该方法包括图案化外延材料以形成多个骰子，每个骰子对应于至少一个激光装置，其特征在于一对骰子之间的第一间距，第一间距小于设计宽度。 该方法包括将多个骰子中的每一个转移到载体晶片，使得每对骰子在每对骰子之间配置有第二间距，第二间距大于对应于设计宽度的第一间距。

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