公开(公告)号：US20170012176A1

公开(公告)日：2017-01-12

申请号：US15271026

申请日：2016-09-20

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Dae Woong Suh ,  Min Woo Kang ,  Joon Sub Lee ,  Hyun A. Kim ,  Kyoung Wan Kim ,  Chang Yeon Kim

IPC: H01L33/46 ,  H01L33/50 ,  H01L33/44 ,  H01L33/62

CPC classification number: H01L33/508 ,  H01L33/20 ,  H01L33/32 ,  H01L33/385 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L33/502 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0016

Abstract: An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of die area of the opening region to the area of the masking region in the second region.

Abstract translation: LED被提供以包括：第一导电类型半导体层; 位于所述第一导电类型半导体层上方的有源层; 位于有源层上的第二导电类型半导体层; 以及缺陷阻挡层，其包括覆盖所述第二导电半导体层的顶表面的至少一部分的掩模区域和用于部分地暴露所述第二导电类型半导体层的顶表面的开口区域，其中所述有源层和所述第二导电类型半导体层 导电型半导体层被设置为暴露第一导电类型半导体层的一部分，并且其中缺陷阻挡层包括围绕第一区域的第一区域和第二区域，以及开口区域的面积与面积的比率 第一区域中的掩模区域的不同于第二区域中的开口区域的管芯面积与掩蔽区域的面积的比率。

公开(公告)号：US20160233386A1

公开(公告)日：2016-08-11

申请号：US15132887

申请日：2016-04-19

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Daewoong Suh ,  Dae Sung Cho ,  Joon Sup Lee ,  Kyu Ho Lee ,  Chi Hyun In

IPC: H01L33/40 ,  H01L33/46 ,  H01L33/42 ,  H01L33/20 ,  H01L33/32 ,  H01L33/12

CPC classification number: H01L33/405 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/12 ,  H01L33/14 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058

Abstract: A light emitting diode includes a first conductive type semiconductor layer and a mesa disposed on the first conductive type semiconductor layer. The mesa includes an active layer and a second conductive type semiconductor layer. A reflective electrode is disposed on the mesa to be in ohmic-contact with the second conductive type semiconductor layer. A current spreading layer is disposed on the mesa and the reflective electrode. A first portion of the current spreading layer is in ohmic-contact with an upper surface of an end portion of the first conductive type semiconductor layer. A lower insulating layer is disposed between the mesa and the current spreading layer, and the reflective electrode and the current spreading layer. An upper insulating layer covers the current spreading layer and includes a first hole exposing a second portion of the current spreading layer that is disposed on an upper portion of the mesa.

Abstract translation: 发光二极管包括设置在第一导电类型半导体层上的第一导电类型半导体层和台面。 台面包括有源层和第二导电类型半导体层。 反射电极设置在台面上以与第二导电类型半导体层欧姆接触。 电流扩散层设置在台面和反射电极上。 电流扩散层的第一部分与第一导电类型半导体层的端部的上表面欧姆接触。 下部绝缘层设置在台面与电流扩散层之间，反射电极和电流扩展层之间。 上绝缘层覆盖电流扩展层，并且包括暴露设置在台面上部的电流扩展层的第二部分的第一孔。

公开(公告)号：US20160163930A1

公开(公告)日：2016-06-09

申请号：US15041461

申请日：2016-02-11

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Won Young Roh ,  Joon Sup Lee ,  Min Woo Kang ,  Jong Min Jang ,  Hyun A Kim ,  Seon Min Lee ,  Daewoong Suh

IPC: H01L33/46 ,  H01L33/50 ,  H01L33/62

CPC classification number: H01L33/46 ,  H01L33/08 ,  H01L33/36 ,  H01L33/44 ,  H01L33/50 ,  H01L33/62 ,  H01L2224/11 ,  H01L2933/0016

Abstract: Disclosed are an LED and an LED module. The LED includes: a first conductivity type semiconductor layer; a mesa disposed over the first conductivity type semiconductor layer and including an active layer and a second conductivity type semiconductor layer; a first ohmic-contact structure in contact with the first conductivity type semiconductor layer; a second ohmic-contact structure in contact with the second conductivity type semiconductor layer; a lower insulating layer at least partially covering the mesa and the first conductivity type semiconductor layer and disposed to form a first opening part at least partially exposing the first ohmic-contact structure and a second opening part at least partially exposing the second ohmic-contact structure; and a current distributing layer connected to the first ohmic-contact structure at least partially exposed by the first opening part and disposed to form a third opening part at least partially exposing the second opening part.

公开(公告)号：US09356191B2

公开(公告)日：2016-05-31

申请号：US14726031

申请日：2015-05-29

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Min Jang ,  Kyu Ho Lee ,  Chang Suk Han ,  Hwa Mok Kim ,  Daewoong Suh ,  Chi Hyun In ,  Jong Hyeon Chae

IPC: H01L33/22 ,  H01L21/02 ,  H01L29/06 ,  H01L33/00 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32

CPC classification number: H01L33/22 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/0657 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32

Abstract: An epitaxial wafer includes a growth substrate, a mask pattern disposed on the growth substrate and comprising a masking region and an opening region, and an epitaxial layer covering the mask pattern and including a first void disposed on the masking region. The first void includes a lower void disposed between a lower surface of the epitaxial layer and the masking region, and an upper void extending from the lower void into the epitaxial layer, the lower void having a greater width than the upper void.

Abstract translation: 外延晶片包括生长衬底，设置在生长衬底上并包括掩模区域和开口区域的掩模图案，以及覆盖掩模图案并且包括设置在掩蔽区域上的第一空隙的外延层。 第一空隙包括设置在外延层的下表面和掩蔽区域之间的下部空隙和从下部空隙延伸到外延层中的上部空隙，下部空隙具有比上部空隙更大的宽度。

公开(公告)号：US20160072011A1

公开(公告)日：2016-03-10

申请号：US14848242

申请日：2015-09-08

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Min Woo Kang ,  Hyun A Kim ,  Won Young Roh ,  Jong Min Jang

IPC: H01L33/14 ,  H01L33/06 ,  H01L33/62 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/00 ,  H01L33/12

CPC classification number: H01L33/14 ,  H01L33/005 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2933/0016

Abstract: Disclosed are a light emitting diode (LED), an LED module including the same, and a method of fabricating the same. The light emitting diode includes a first conductive-type semiconductor layer; a second conductive-type semiconductor layer; an active layer interposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer; a first electrode pad region electrically connected to the first conductive-type semiconductor layer; a second electrode pad region electrically connected to the second conductive-type semiconductor layer; and a spark gap formed between a first leading end electrically connected to the first electrode pad region and a second leading end electrically connected to the second electrode pad region. The spark gap can achieve electrostatic discharge protection of the light emitting diode.

公开(公告)号：US20150295138A1

公开(公告)日：2015-10-15

申请号：US14752413

申请日：2015-06-26

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Dae Woong Suh ,  Min Woo Kang ,  Joon Sub Lee ,  Hyun A. Kim ,  Kyoung Wan Kim ,  Chang Yeon Kim

IPC: H01L33/46 ,  H01L33/24 ,  H01L33/40

CPC classification number: H01L33/508 ,  H01L33/20 ,  H01L33/32 ,  H01L33/385 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L33/502 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0016

Abstract: An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of the area of the opening region to the area of the masking region in the second region.

Abstract translation: LED被提供以包括：第一导电类型半导体层; 位于所述第一导电类型半导体层上方的有源层; 位于有源层上的第二导电类型半导体层; 以及缺陷阻挡层，其包括覆盖所述第二导电半导体层的顶表面的至少一部分的掩模区域和用于部分地暴露所述第二导电类型半导体层的顶表面的开口区域，其中所述有源层和所述第二导电类型半导体层 导电型半导体层被设置为暴露第一导电类型半导体层的一部分，并且其中缺陷阻挡层包括围绕第一区域的第一区域和第二区域，以及开口区域的面积与面积的比率 在第一区域中的掩模区域与第二区域中的开口区域的面积与掩蔽区域的面积的比率不同。

公开(公告)号：US20150214440A1

公开(公告)日：2015-07-30

申请号：US14677904

申请日：2015-04-02

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Dae Woong Suh ,  Min Woo Kang ,  Joon Sub Lee ,  Hyun A. Kim

IPC: H01L33/46 ,  H01L33/40 ,  H01L33/12

CPC classification number: H01L33/405 ,  H01L33/005 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.

公开(公告)号：US20150200334A1

公开(公告)日：2015-07-16

申请号：US14671491

申请日：2015-03-27

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Daewoong Suh ,  Dae Sung Cho ,  Joon Sup Lee ,  Kyu Ho Lee ,  Chi Hyun In

IPC: H01L33/46 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32 ,  H01L33/42 ,  H01L33/20

CPC classification number: H01L33/405 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/12 ,  H01L33/14 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058

Abstract: A light-emitting diode including a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer and having a conductivity type different than that of the first semiconductor layer, and a reflective pattern disposed on the second semiconductor layer and configured to reflect light emitted from the active layer, the reflective pattern having heterogeneous metal layers and configured to absorb stress caused by differences in coefficient of thermal expansion between the heterogeneous metal layers.

Abstract translation: 一种发光二极管，包括基板，设置在基板上的第一半导体层，设置在第一半导体层上的有源层，设置在有源层上并具有与第一半导体层不同的导电类型的第二半导体层 以及设置在所述第二半导体层上并且被配置为反射从所述有源层发射的光的反射图案，所述反射图案具有异质金属层并且被配置为吸收由所述异质金属层之间的热膨胀系数的差异引起的应力。

公开(公告)号：US20150200230A1

公开(公告)日：2015-07-16

申请号：US14420175

申请日：2013-08-06

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Min Jang ,  Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Won Young Roh ,  Min Woo Kang ,  Hyun A. Kim

IPC: H01L27/15 ,  H01L33/46 ,  H01L33/42 ,  H01L33/38 ,  H01L33/40

CPC classification number: H01L27/156 ,  H01L33/382 ,  H01L33/385 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: Disclosed are a light emitting diode array on a wafer level and a method of forming the same. The light emitting diode array includes a growth substrate; a plurality of light emitting diodes arranged on the substrate, wherein each of the plurality of light emitting diodes has a first semiconductor layer, an active layer and a second semiconductor layer; and a plurality of upper electrodes arranged on the plurality of light emitting diodes and formed of an identical material, wherein each of the plurality of upper electrodes is electrically connected to the first semiconductor layer of a respective one of the light emitting diodes. At least one of the upper electrodes is electrically connected to the second semiconductor layer of an adjacent one of the light emitting diodes, and another of the upper electrodes is insulated from the second semiconductor layer of an adjacent one of the light emitting diodes. Accordingly, it is possible to provide a light emitting diode array that can be driven under at a high voltage and simplify a forming process thereof.

Abstract translation: 公开了一种晶圆级的发光二极管阵列及其形成方法。 发光二极管阵列包括生长衬底; 布置在所述基板上的多个发光二极管，其中所述多个发光二极管中的每一个具有第一半导体层，有源层和第二半导体层; 以及多个上电极，其布置在所述多个发光二极管上并由相同的材料形成，其中所述多个上电极中的每一个电连接到所述发光二极管中的相应一个的所述第一半导体层。 上部电极中的至少一个电连接到相邻的一个发光二极管的第二半导体层，另一个上部电极与相邻发光二极管的第二半导体层绝缘。 因此，可以提供可以在高电压下驱动的发光二极管阵列并简化其形成过程。

公开(公告)号：US20150084084A1

公开(公告)日：2015-03-26

申请号：US14495771

申请日：2014-09-24

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Won Young Roh ,  Joon Sup Lee ,  Min Woo Kang ,  Jong Min Jang ,  Hyun A Kim ,  Seon Min Bae ,  Daewoong Suh

IPC: H01L33/10 ,  H01L33/14 ,  H01L33/36

CPC classification number: H01L33/46 ,  H01L33/08 ,  H01L33/36 ,  H01L33/44 ,  H01L33/50 ,  H01L33/62 ,  H01L2224/11 ,  H01L2933/0016

Abstract: Disclosed are an LED and an LED module. The LED includes: a first conductivity type semiconductor layer; a mesa disposed over the first conductivity type semiconductor layer and including an active layer and a second conductivity type semiconductor layer; a first ohmic-contact structure in contact with the first conductivity type semiconductor layer; a second ohmic-contact structure in contact with the second conductivity type semiconductor layer; a lower insulating layer at least partially covering the mesa and the first conductivity type semiconductor layer and disposed to form a first opening part at least partially exposing the first ohmic-contact structure and a second opening part at least partially exposing the second ohmic-contact structure; and a current distributing layer connected to the first ohmic-contact structure at least partially exposed by the first opening part and disposed to form a third opening part at least partially exposing the second opening part.

Abstract translation: 公开了一种LED和LED模块。 LED包括：第一导电类型半导体层; 设置在所述第一导电类型半导体层上并包括有源层和第二导电类型半导体层的台面; 与第一导电类型半导体层接触的第一欧姆接触结构; 与第二导电类型半导体层接触的第二欧姆接触结构; 至少部分地覆盖台面和第一导电类型半导体层的下绝缘层，并设置成形成至少部分地暴露第一欧姆接触结构的第一开口部分和至少部分地暴露第二欧姆接触结构的第二开口部分 ; 以及电流分布层，其连接到所述第一欧姆接触结构，所述电流分布层至少部分地被所述第一开口部暴露并且被布置成形成至少部分地暴露所述第二开口部的第三开口部。