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    LIGHT-EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY
    121.
    发明申请
    LIGHT-EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY 有权
    具有改进的光提取效率的发光二极管

    公开(公告)号：US20150280074A1

    公开(公告)日：2015-10-01

    申请号：US14740131

    申请日：2015-06-15

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jin Woong Lee ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim

    IPC: H01L33/40 ,  H01L33/38 ,  H01L33/22 ,  H01L33/42

    CPC classification number: H01L33/405 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44

    Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.

    Abstract translation: 根据本发明，具有提高光提取效率的发光二极管包括：包括形成在基板上的N层，发光层和P层的半导体层叠结构; 形成在N层上的N型电极; 和形成在P层上的P型电极，其中，所述N型电极和所述P型电极包括焊盘电极和分散电极，并且所述N型电极和/或所述P型电极包括： 用于将光反射到分散电极上的反射电极层。 因此，发光二极管在电极上具有反射电极层，以提高光提取效率。 此外，反射层在垫单元下方被图案化，从而形成粗糙度并改善粘附性。

    LIGHT-EMITTING DIODE HAVING IMPROVED LIGHT EXTRACTION EFFICIENCY AND METHOD FOR MANUFACTURING SAME
    124.
    发明申请
    LIGHT-EMITTING DIODE HAVING IMPROVED LIGHT EXTRACTION EFFICIENCY AND METHOD FOR MANUFACTURING SAME 审中-公开
    具有改进的光提取效率的发光二极管及其制造方法

    公开(公告)号：US20150014702A1

    公开(公告)日：2015-01-15

    申请号：US14383470

    申请日：2013-02-26

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jin Woong Lee ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Hyun Oh ,  Tae Gyun Kim

    IPC: H01L33/22 ,  H01L33/00 ,  H01L33/32

    CPC classification number: H01L33/22 ,  H01L33/0075 ,  H01L33/20 ,  H01L33/32 ,  H01L2933/0058

    Abstract: Disclosed are a light-emitting diode having improved light extraction efficiency and a method for manufacturing same. This light-emitting diode includes: a gallium nitride substrate having an upper surface and a lower surface; and a gallium nitride semiconductor multilayer structure disposed on the lower surface of the substrate, and having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. Herein, the gallium nitride substrate has a main pattern having a protruding portion and a concave portion on the upper surface, and a rough surface formed on the protruding portion of the main pattern. The light-emitting diode is capable of improving light extraction efficiency through the upper surface thereof since the rough surface is formed along with the main pattern on the upper surface of the gallium nitride substrate.

    Abstract translation: 公开了一种具有改进的光提取效率的发光二极管及其制造方法。 该发光二极管包括：具有上表面和下表面的氮化镓衬底; 以及设置在所述基板的下表面上并具有第一导电半导体层，有源层和第二导电半导体层的氮化镓半导体多层结构。 这里，氮化镓衬底具有在上表面上具有突出部分和凹入部分的主图案，以及形成在主图案的突出部分上的粗糙表面。 发光二极管能够通过其上表面提高光提取效率，因为粗糙表面与氮化镓衬底的上表面上的主图案一起形成。

    LIGHT EMITTING DIODE WITH IMPROVED LUMINOUS EFFICIENCY
    125.
    发明申请
    LIGHT EMITTING DIODE WITH IMPROVED LUMINOUS EFFICIENCY 审中-公开
    发光二极管具有提高的光效

    公开(公告)号：US20140299905A1

    公开(公告)日：2014-10-09

    申请号：US14309658

    申请日：2014-06-19

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jeong Hee YANG ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim ,  Sang Hyun Oh ,  Duk Il Suh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong

    IPC: H01L33/42 ,  H01L33/38

    CPC classification number: H01L33/385 ,  H01L33/20 ,  H01L33/38 ,  H01L33/42 ,  H01L2933/0091

    Abstract: A light-emitting diode includes a substrate, and a light-emitting structure disposed on the substrate. The light-emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A transparent electrode layer including concave portions and convex portions is disposed on the second conductivity-type semiconductor layer. Micro-lenses are disposed on the transparent electrode layer and completely cover the concave portions, and only partially cover the convex portions that are disposed between the micro-lenses.

    Abstract translation: 发光二极管包括基板和设置在基板上的发光结构。 发光结构包括第一导电型半导体层，有源层和第二导电型半导体层。 包括凹部和凸部的透明电极层设置在第二导电型半导体层上。 微透镜设置在透明电极层上并完全覆盖凹部，并且仅部分地覆盖设置在微透镜之间的凸部。

    LIGHT EMITTING DIODE HAVING ELECTRODE PADS
    126.
    发明申请
    LIGHT EMITTING DIODE HAVING ELECTRODE PADS 审中-公开
    具有电极垫的发光二极管

    公开(公告)号：US20140209963A1

    公开(公告)日：2014-07-31

    申请号：US14229693

    申请日：2014-03-28

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Sum Geun Lee ,  Jin Cheol Shin ,  Yeo Jin Yoon ,  Kyoung Wan Kim ,  Jeong Hee Yang

    IPC: H01L33/38

    CPC classification number: H01L33/387 ,  H01L27/153 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A light-emitting diode includes at least two light emitting cells disposed on a substrate and spaced apart from each other, wherein each of the at least two light emitting cells includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. Each of the at least two light emitting cells includes a cathode disposed on the first conductivity-type semiconductor layer, an anode disposed on the second conductivity-type semiconductor layer, and the cathode of a first light emitting cell of the at least two light emitting cells is electrically connected in series to the anode of a second light emitting cell of the at least two light emitting cells adjacent to the first light emitting cell by an interconnecting section.

    Abstract translation: 发光二极管包括设置在基板上并彼此间隔开的至少两个发光单元，其中至少两个发光单元中的每一个包括第一导电型半导体层，有源层和第二导电 型半导体层。 所述至少两个发光单元中的每一个包括设置在所述第一导电类型半导体层上的阴极，设置在所述第二导电类型半导体层上的阳极和所述至少两个发光的第一发光单元的阴极 电池通过互连部分串联连接到与第一发光单元相邻的至少两个发光单元的第二发光单元的阳极。

    LIGHT EMITTING DIODE HAVING ELECTRODE PADS
    127.
    发明申请
    LIGHT EMITTING DIODE HAVING ELECTRODE PADS 审中-公开
    具有电极垫的发光二极管

    公开(公告)号：US20140209962A1

    公开(公告)日：2014-07-31

    申请号：US14229672

    申请日：2014-03-28

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Won Cheol Seo ,  Dae Sung Cho ,  Kyung Hee Ye ,  Kyoung Wan Kim ,  Yeo Jin Yoon

    IPC: H01L33/42

    CPC classification number: H01L33/387 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

    Abstract: Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

    Abstract translation: 本发明的示例性实施例涉及包括基板，布置在基板上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层之间的有源层 和第二导电型半导体层，电连接到第一导电类型半导体层的第一电极焊盘，布置在第二导电类型半导体层上的第二电极焊盘，设置在第二导电类型半导体层和第二电极之间的绝缘层 垫，以及电连接到第二电极焊盘的至少一个上延伸部，所述至少一个上延伸部电连接到第二导电型半导体层。

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